C20T10Q-11A [NIEC]
SBD; SBD
| 型号： | C20T10Q-11A |
| 厂家： | 
NIHON INTER ELECTRONICS CORPORATION |
| 描述： | SBD |
| 文件： | 总2页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBD T y p e : C20T10Q-11A
OUTLINE DRAWING
FEATURES
*Tabless TO-220
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150 °C operation
Maximum Ratings
Approx Net Weight: 1.45g
C20T10Q-11A
Rating
Symbol
VRRM
Unit
V
Repetitive Peak Reverse Voltage
100
50 Hz Full Sine Wave
Resistive Load
Average Rectified Output Current
RMS Forward Current
IO
20
Tc=120°C
A
A
A
IF(RMS)
IFSM
22.2
50Hz Full Sine Wave ,1cycle
Non-repetitive
Surge Forward Current
180
Operating JunctionTemperature Range
Storage Temperature Range
Tjw
Tstg
-40 to +150
-40 to +150
°C
°C
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Symbol
Conditions
Min. Typ. Max. Unit
Tj= 25°C, VRM= VRRM
per arm
Tj= 25°C, IFM= 10 A
per arm
IRM
-
-
1
mA
V
Peak Forward Voltage
Thermal Resistance
VFM
-
-
-
-
0.88
Rth(j-c) Junction to Case
1.5 °C /W
C20T10Q-11A OUTLINE DRAWING (Dimentions in mm)
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