EC31QS10 [NIEC]
Low Forward Voltage drop Diode; 低正向压降二极管
| 型号： | EC31QS10 |
| 厂家： | 
NIHON INTER ELECTRONICS CORPORATION |
| 描述： | Low Forward Voltage drop Diode |
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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T y p e : EC31QS10
OUTLINE DRAWING
FEATURES
* Miniature Size,Surface Mount Device
* Low Forward Voltage Drop
* Low Power Loss,High Efficiency
* High Surge Capability
* 30 Volts through 100Volts Types Available
* Packaged in 12mm Tape and Reel
* Not Rolling During Assembly
Maximum Ratings
Approx Net Weight:0.06g
Rating
Symbol
VRRM
EC31QS10
100
Unit
V
Repetitive Peak Reverse Voltage
1.3 Ta=26 °C *1
50Hz Half Sine
Wave Resistive Load
Average Rectified Output Current
IO
A
Tl=84 °C
3.0
Tl:Lead Temperature
RMS Forward Current
Surge Forward Current
IF(RMS)
IFSM
4.71
A
A
50Hz Half Sine Wave,1cycle
Non-repetitive
-40 to +150
60
Operating JunctionTemperature Range
Storage Temperature Range
Tjw
Tstg
°C
°C
-40 to +150
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Min. Typ. Max.
Unit
Peak Reverse Current
Peak Forward Voltage
IRM
VFM
-
-
-
-
-
-
-
-
2
mA
V
Tj= 25°C, VRM= VRRM
Tj= 25°C, IFM= 3.0A
0.85
108
23
Thermal Junction to Ambient Rth(j-a)
Resistance
*1
-
°C /W
Junction to Lead
*1 Alumina Substrate Mounted
Soldering Lands=2x2mm,Both Sides
Rth(j-l)
EC31QS10 OUTLINE DRAWING (Dimensions in mm)
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