PBMB300C12 [NIEC]

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel;
PBMB300C12
型号: PBMB300C12
厂家: NIHON INTER ELECTRONICS CORPORATION    NIHON INTER ELECTRONICS CORPORATION
描述:

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel

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PBMB50A6

IGBT MODULE H_Bridge 50A 600V

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25 NIEC

PBMB50A6

IGBT MODULE H_Bridge 50A 600V

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5 NIEC

PBMB50B12

IGBT MODULE H-Bridge 50A 1200V

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21 NIEC

PBMB50B12C

IGBT MODULE H-Bridge 50A 1200V

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30 NIEC

PBMB50B12C

IGBT MODULE H-Bridge 50A 1200V

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6 NIEC

PBMB50E6

IGBT Module-H Bridge 50A, 600V

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4 NIEC

PBMB75A6

IGBT MODULE H-Bridge 75A 600V

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8 NIEC

PBMB75A6

IGBT MODULE H-Bridge 75A 600V

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5 NIEC

PBMB75B12

IGBT MODULE H-Bridge 75A 1200V

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19 NIEC

PBMB75B12

IGBT MODULE H-Bridge 75A 1200V

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4 NIEC

PBMB75C12

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

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1 NIEC

PBMB75E6

IGBT Module-H Bridge 75A, 600V

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5 NIEC

PBM-E1048

The current supplied by a power supply is distributed onto 1 x 8 or 2 x 4 ways/slots.

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2 ETAL

PBM-E1048-8A0-B0-V0089

The current supplied by a power supply is distributed onto 1 x 8 or 2 x 4 ways/slots.

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2 ETAL

PBM-E1048-8A0-B2-V0089

The current supplied by a power supply is distributed onto 1 x 8 or 2 x 4 ways/slots.

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2 ETAL