PD4M441H [NIEC]
MOSFET MODULE Dual 30A 450/500V; MOSFET模块双30A 450 / 500V
| 型号： | PD4M441H |
| 厂家： | 
NIHON INTER ELECTRONICS CORPORATION |
| 描述： | MOSFET MODULE Dual 30A 450/500V |
| 文件： | 总3页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET MODULE Dual 30A 450V/500V
PD4M441H / PD4M440H
OUTLINE DRAWING
Dimension(mm)
FEATURES
* Dual MOS FETs Cascaded Circuit
* Prevented Body Diodes of MOSFETs by
SBDs, and Ultra Fast Recovery Diodes
Connected in Parallel
108.0
* 300KHz High Speed Switching Possible
TYPICAL APPLICATIONS
* Power Supply for the Communications and
the Induction Heating
Circuit
Approximate Weight : 220g
MAXMUM RATINGS
Ratings
Drain-Source Voltage (VGS=0V)
Gate - Source Voltage
Symbol
VDSS
VGSS
PD4M441H
450
PD4M440H
Unit
V
V
500
+/ - 20
30 (Tc=25°C)
21 (Tc=25°C)
60 Tc=25°C)
230 Tc=25°C)
-40 to +150
-40 to +125
2000
Duty=50%
D.C.
Continuous Drain Current
ID
A
Pulsed Drain Current
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminals to Base AC, 1 min.)
IDM
PD
A
W
°C
°C
V
T
jw
Tstg
VISO
Module Base to Heatsink
Bus Bar to Main Terminals
3.0
2.0
Mounting Torque
FTOR
N•m
ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
VDS=VDSS,VGS=0V
T=125°C, VDS=VDSS,VGS=0V
Min.
-
-
2.0
-
-
-
-
-
Typ.
-
-
3.2
-
190
3.3
27
Max.
1.0
4.0
4.0
1.0
210
3.5
-
-
-
-
Unit
mA
Zero Gate Voltage Drain Current
IDSS
j
Gate-Source Threshold Voltage
Gate-Source Leakage Current
Static Drain-Source On-Resistance
Drain-Source On-Voltage
Forward Transconductance
Input Capacitance
VGS(th) VDS=VGS, ID=1mA
IGSS
rDS(on)
V
µA
m-ohm
V
S
nF
VGS=+/- 20V,VDS=0V
VGS=10V, ID=15A
VDS(on) VGS=10V, ID=15A
g
VDS=15V, ID=15A
fs
C
5.2
1.1
0.18
ies
Output Capacitance
Coss
Crss
-
-
VDS=25V,VGS=0V,f=1MHz
nF
nF
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
VDD= 1/2VDSS
ID=15A
VGS= -5V, +10V
RG= 7ohm
-
-
-
-
100
60
180
50
-
-
-
-
ns
t
f
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Characteristic
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery
Symbol
IS
ISM
VSD
trr
Qr
Test Condition
Min.
Typ.
-
-
Max.
21
60
1.8
-
Unit
A
A
V
ns
µC
D.C.
-
-
-
-
-
-
IS=30A
-
100
0.15
IS=30A, -dis/dt=100A/µs
-
THERMAL CHARACTERISTICS
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
0.56
2.0
Unit
MOS FET
Diode
-
-
-
-
-
-
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
R
th(j-c)
°C/W
R
th(c-f)
Mounting surface flat, smooth, and greased
0.1
PD4M44xH
108.0
Fig. 1 Typical O utput C haracteristics
Fig. 2 Typical D rain-Source O n-Voltage
Fig. 2 Vs. G ate-Source Voltage
Fig. 3 Typical D rain-Source O n Voltage
Fig. 3 Vs. Junction Tem perature
TC=25℃ 250μs Pulse Test
TC=25℃ 250μs Pulse Test
VGS=10V 250μs Pulse Test
50
40
30
20
10
0
8
6
4
2
0
16
12
8
ID=30A
10V
6V
V
on(V)
ID=30A
S
DS
V
V
E
E
(A)
G
A
G
A
D
T
L
T
L
O
V
O
V
15A
10A
15A
10A
DACURENTI
VGS=5V
E
SRUCEON
4
O
T
O
T
I
DRAIN
4V
10
DRAIN TO SOURCE VOLTAGE VDS (V)
0
0
2
4
6
8
12
0
4
8
12
16
-40
0
40
80
120
160
GATE TO SOURCE VOLTAGE VGS (V)
JUNCTION TEMPERATURE Tj (ꢀ℃)
Fig. 4 Typical C apacitance
Fig. 5 Typical G ate C harge
Fig. 6 Typical Sw itching Tim e
Fig. 4 Vs. D rain-Source Voltage
Fig. 5 Vs. G ate-Source Voltage
Fig. 6 Vs. Series G ate im pedance
VGS=0V f=1kHz
ID=20A
ID=15A VDD=250V TC=25℃ 80μs Pulse Test
12
10
8
16
5
VDD=100V
250V
400V
V()
2
1
SG
12
8
V
E
)s
G
A
T
L
Ciss
O
ITEMt(
6
0.5
ANEC(nF)
toff
ton
CIT
A
OSURCVE
4
2
0
0.2
0.1
CAP
O
Coss
Crss
WSTCHNIG
4
ET
AG
0
0.05
1
2
5
10
20
50
100
0
40
80
120
160
200
240
2
5
10
20
50
100
200
DRAIN TO SOURCE VOLTAGE VDS (V)
TOTAL GATE CHRAGE Qg (nC)
SERIES GATE IMPEDANCE RG (Ωꢀ)
Fig. 7 Typical Sw itching Tim e
Fig. 7 Vs. D rain C urrent
Fig. 8 Typical Source-D rain D iode Forw ard
Fig. 8 C haracteristics
Fig. 9 Typical Reverse Recovery C haracteristics
RG=7Ω VDD=250V TC=25℃ 80μs Pulse Test
250μs Pulse Test
IS=30A ꢀIS=15A Tj=150℃
1000
500
60
50
40
30
20
500
200
100
50
n(s)
r
trr
A()
S
td(off)
td(on)
200
A()
E
R
Y
TIMEt(ns)
EVR
100
50
Tj=125℃
Tj=25℃
tr
tf
IR
20
SWTCHING
OSCURENTI
E
VSUCRENTI
10
0
10
5
20
10
1
2
5
10
20
50
0
0.4
0.8
1.2
1.6
0
100
200
300
400
500
600
DRAIN CURRENT ID (A)
SOURCE TO DRAIN VOLTAGE VSD (V)
-dis/dt (A/μs)
Fig. 10 M axim um Safe O perating A rea
Fig. 11-1
N orm alized Transient Therm al
im pedance(M O SFET)
2
100
5
TC=25℃ Tj=150℃M A X Single Pulse
Operation in this area
is lim ited by RDS (on)
200
100
50
NACE
2
10-1
5
]
10μs
ht(j-)c
Per Unit Base
Rth(j-c)=0.56℃/W
1 Shot Pulse
/R
(A)
2
100μs
20
10
5
D
ht(j-)c
I
M
[r
10-2
10-5
10-4
10-3
10-2
10-1
100
101
PULSE DURATION t (s)
1m s
Fig. 11-2
N orm alized Transient Therm al
im pedance(D IO D E)
2
100
5
2
1
DACURENTI
10m s
DC
NACE
2
10-1
5
0.5
]
ht(j-)c
Per Unit Base
Rth(j-c)=2.0℃/W
1 Shot Pulse
－441H －440H
/R
0.2
1
2
5
10 20
50 100 200 5001000
2
ht(j-)c
DRAIN TO SOURCE VOLTAGE VDS (V)
I
M
[r
10-2
10-5
10-4
10-3
10-2
10-1
100
101
PULSE DURATION t (s)
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