PDMB150T6C [NIEC]

Insulated Gate Bipolar Transistor;

PDMB150T6C


型号：	PDMB150T6C
厂家：	NIHON INTER ELECTRONICS CORPORATION
描述：	Insulated Gate Bipolar Transistor 局域网栅
文件：	总1页 (文件大小：70K)
下载：	下载PDF数据表文档文件

PDMB200A6

200 A 600 V

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13 NIEC

PDMB200A6

IGBT MODULE Dual 200a 600V

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10 NIEC

PDMB200A6_1

200 A 600 V

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10 NIEC

PDMB200A6C

200 A 600 V

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15 NIEC

PDMB200B12

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,

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0 NIEC

PDMB200B12C

200A 1200V

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15 NIEC

PDMB200B12C

IGBT MODULE Dual 200A 1200V

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14 NIEC

PDMB200B12C_1

200A 1200V

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5 NIEC

PDMB200B12C2

IGBT MODULE Dual 200A 1200V

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5 NIEC

PDMB200B12C2

IGBT MODULE Dual 200A 1200V

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5 NIEC

PDMB200BS12

IGBT Module-Dual

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7 NIEC

PDMB200BS12C

IGBT Module-Dual

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9 NIEC

PDMB200C12

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,

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0 NIEC

PDMB200C12C

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,

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1 NIEC

PDMB200E6

PDMB200E6

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10 ETC

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