PRHMB300A6A_1 [NIEC]
300A 600V; 300A 600V型号: | PRHMB300A6A_1 |
厂家: | NIHON INTER ELECTRONICS CORPORATION |
描述: | 300A 600V |
文件: | 总3页 (文件大小:126K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IGBT Module
-
Chopper
300 A,600V
PRHMB300A6A
□ 回 路 図 : CIRCUIT
□ 外 形 寸 法 図 : OUTLINE DRAWING
Dimension:[mm]
□ 最 大 定 格 : MAXIMUM RATINGS (TC=25℃)
重量:430g
Item
コレクタ・エミッタ間電圧
Symbol
VCES
Rated Value
Unit
V
600
Collector-Emitter Voltage
ゲート・エミッタ間電圧
Gate-Emitter Voltage
VGES
±20
V
A
IC
ICP
DC
300
600
コ レ ク タ 電 流
Collector Current
1ms
コ レ ク タ 損 失
Collector Power Dissipation
PC
Tj
1,040
-40~+150
-40~+125
2,500
W
接
合
温
度
℃
Junction Temperature Range
保
存
温
度
Tstg
Viso
Ftor
℃
Storage Temperature Range
絶
縁
耐
圧(Terminal to Base AC,1minute)
V(RMS)
Isolation Voltage
Module Base to Heatsink
Busbar to Main Terminal
締 め 付 け ト ル ク
Mounting Torque
PCHMB300A6
PCHMB300A6C
3(30.6)
N・m
(kgf・cm)
2(20.4)
□ 電 気 的 特 性 : ELECTRICAL CHARACTERISTICS (TC=25℃)
Characteristic Symbol Test Condition
コ レ ク タ 遮 断 電 流
Min. Typ. Max. Unit
ICES
VCE = 600V, VGE = 0V
VGE = ±20V, VCE = 0V
IC = 300A, VGE = 15V
VCE = 5V, IC = 300mA
VCES = 10V, VGE = 0V,f= 1MHz
-
-
-
-
3.0
1.0
2.6
8.0
-
mA
µA
V
Collector-Emitter Cut-Off Current
ゲ ー ト 漏 れ 電 流
Gate-Emitter Leakage Current
IGES
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
VCE(sat)
VGE(th)
Cies
-
2.1
-
ゲ ー ト し き い 値 電 圧
Gate-Emitter Threshold Voltage
4.0
-
V
入
力
容
量
30,000
pF
Input Capacitance
上 昇 時 間 Rise
Time
tr
ton
tf
-
-
-
-
0.20 0.40
0.40 0.75
0.20 0.35
0.60 0.80
VCC = 300V
RL = 1Ω
ス イ ッ チ ン グ 時 間 ターンオン時間 Turn-on Time
Switching Time
µs
RG = 2.0Ω
VGE = ±15V
下 降 時 間 Fall
Time
ターンオフ時間 Turn-off Time
toff
□フリーホイーリングダイオードの 特 性: FREE WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃)
Item
流
Symbol
Rated Value
300
Unit
A
DC
IF
順
電
Forward Current
1ms
IFM
600
Characteristic
Symbol Test Condition
Min. Typ. Max. Unit
順
電
圧
VF
IF = 300A, VGE = 0V
-
-
1.9
2.4
V
Peak Forward Voltage
逆
回
復
時
間
IF = 300A, VGE = -10V
di/dt = 300A/µs
trr
0.15 0.25
µs
Reverse Recovery Time
□ 熱 的 特 性 : THERMAL CHARACTERISTICS
Characteristic Symbol Test Condition
Rth(j-c) Junction to Case
Min. Typ. Max. Unit
IGBT
Diode
-
-
-
-
0.12
0.24
熱
抵
抗
℃/W
Thermal Impedance
PRHMB300A6A
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
Fig.1- Output Characteristics (Typical)
TC=25℃
TC=25℃
16
14
12
10
8
600
500
400
300
200
100
0
VGE=20V
12V
15V
IC=150A
300A
600A
10V
EC
eV
C
I
g
a
t
l
o
ent
r
V
r
e
t
9V
Cur
t
i
r
o
m
E
6
ect
l
l
o
t
r
Co
o
4
cet
l
l
8V
7V
2
oC
0
0
4
8
12
16
20
0
2
4
6
8
10
Gate to Emitter Voltage VGE (V)
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
TC=125℃
400
350
300
250
200
150
100
50
16
16
14
12
10
8
RL=1Ω
TC=25℃
IC=150A
300A
600A
14
12
10
8
G
a
t
e
to
E
CE
V
e
g
a
E
m
eV
g
a
i
t
t
l
t
te
o
o
V
r
r
V
V
r
e
t
o
e
t
l
t
t
i
t
a
g
VCE=300V
m
m
6
e
V
6
E
E
o
o
t
GE
t
r
200V
100V
r
o
t
o
4
4
c
e
l
o
ect
l
l
2
2
C
Co
0
0
0
0
4
8
12
16
20
0
150
300
450
600
750
900
1050
1200
1350
Gate to Emitter Voltage VGE (V)
Total Gate Charge Qg (nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
Fig.6- Collector Current vs. Switching Time (Typical)
200000
100000
50000
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VGE=0V
f=1MHZ
TC=25℃
VCC=300V
RG=2.0Ω
VGE=±15V
TC=25℃
Cies
Coes
Cres
20000
toff
t
e
10000
C
e
m
i
nc
5000
T
a
t
ton
gn
ci
hci
pa
t
i
2000
1000
500
Ca
wS
tf
tr
200
0.2
0.5
1
2
5
10
20
50
100
200
0
50
100
150
200
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
PRHMB300A6A
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
5
600
500
400
300
200
100
0
VCC=300V
IC=300A
VG=±15V
TC=25℃
TC=25℃
TC=125℃
2
1
toff
ton
F
I
t
t
e
tr
m
i
ern
0.5
u
T
C
ng
d
r
a
chi
tf
t
i
w
0.2
0.1
o
Sw
F
0.05
0.5
1
2
5
10
20
50
0
1
2
3
4
Series Gate Impedance RG (Ω)
Forward Voltage VF (V)
Fig.9- Reverse Recovery Characteristics (Typical)
Fig.10- Reverse Bias Safe Operating Area (Typical)
500
1000
500
IF=300A
TC=25℃
RG=2.0Ω
VGE=±15V
TC≦125℃
200
100
50
M
200
100
50
Rr
trr
I
r
r
ent
C
I
t
e
r
r
u
m
i
20
10
5
C
net
y
r
r
r
T
y
r
e
v
u
e
v
C
r
o
c
o
e
eco
cet
R
IRrM
l
l
R
2
1
s
r
20
10
5
e
s
r
oC
e
v
e
v
e
e
0.5
R
k
R
a
e
0.2
0.1
P
0
400
800
1200
1600
2000
2400
0
200
400
600
800
-di/dt (A/μs)
Collector to Emitter Voltage V CE (V)
Fig.11- Transient Thermal Impedance
5x10 -1
FRD
2x10 -1
1x10 -1
5x10 -2
IGBT
h
t
R
e
c
n
2x10 -2
1x10 -2
5x10 -3
peda
m
I
l
a
m
her
T
TC=25℃
2x10 -3
1x10 -3
ent
i
s
n
1 Shot Pulse
a
r
T
10-5
10-4
10-3
10-2
10-1
1
101
Time t (s)
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