MBR20T45CT [NIUHANG]
LOW VF SCHOTTKY RECTIFIERS;
| 型号： | MBR20T45CT |
| 厂家： | 
NIUHANG |
| 描述： | LOW VF SCHOTTKY RECTIFIERS |
| 文件： | 总3页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Niu Hang
Electronic Co. Ltd
Specification
For Approval
MBR20L45CT,MBR20L45FCT
LOW VF SCHOTTKY RECTIFIERS
45 Volts
20 Ampers
Marking
TO-220-3L
VOLTAGE
CURRENT
ITO-220AB
FEATURES
Power pack
MBR20T45CT
MBR20T45FCT
·
·
·
·
·
·
·
·
Metal silicon junction ,majority carrier conduction
Guard ring for overvoltage protection
Low power loss ,high efficiency
High current capability ,low forward voltage drop
High forward surge capability
xxxx
xxxx
xxxx
High frequency operation
MBR20L45FCT
MBR20L45CT
Solder bath temperature 275℃ maximum，10s，per JESD22-B106（for TO-220-3L
and ITO-220AB package）
·
Component in accordance to RoHS 2011/65/EU
MECHANICAL DATA
·
·
·
·
·
Case: JEDEC TO-220-3L、ITO-220AB
Molding compound meets UL94V-0 flammability rating
Terminals: Lead solderable per J-STD-002 and JESD22-B102
Polarity: As marked
1 2 3
1
2
3
Mounting Torque: 10 in-Ibs maximum
TYPICAL APPLICATIONS
·
For use in low voltage ,high frequency inverters ,DC/DC
converters,free wheeling ,and polarity protection applications
Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified )
Parameter Symbol
VRRM
MBR20L45CT/FCT
Unit
V
Maximum repetitive peak reverse voltage
IF(AV)
45
20
Maximum average forward rectified current(see fig.1)
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method at rated TL)
IFSM
200
A
IRRM
TJ ,TSTD
VAC
Peak repetitive reverse current per diode at tp=2μs 1KHz
Operating junction and Storage temperature range
0.5
-55 to +150
1500
A
℃
V
Isolation voltage(ITO-220AB only)from terminals to heatsink t=1 min
Electrical Characteristcs (Ratings at 25℃ ambient temperature unless otherwise specified )
Symbol
Test Conditions
TYP.
0.45
0.37
0.35
0.38
0.30
0.28
80
MAX.
0.48
--
Unit
Parameter
TA=25℃
TA=100℃
TA=125℃
TA=25℃
TA=100℃
TA=125℃
TA=25℃
Per leg
IF=10A
--
VF1)
Instaneous forward voltage per diode
V
0.41
--
Per leg
IF=5A
--
200
15
uA
IR2)
CJ
TA=100℃
TA=125℃
Reverse current per diode
Typical junction capacitance
VR=45V
8
mA
20
50
4V,1MHz
570
pF
Thermal Characteristcs (Ratings at 25℃ ambient temperature unless otherwise specified )
Parameter
Symbol
MBR20L45CT
2.5
MBR20L45FCT
4.5
Unit
Typical thermal resistance 3）
RθJC
℃/W
Notes: 1.Pulse test: 300 μs pulse width,1% duty cycle
2.Pulse test: pulse width≤40ms
3.Thermal resistance from junction to case
Http://www.nhel.com.cn
Data:2014/10/20
Rev.:B
Page:
1
of
3
Niu Hang
Electronic Co. Ltd
Specification
For Approval
MBR20L45CT,MBR20L45FCT
LOW VF SCHOTTKY RECTIFIERS
RATINGANDCHARACTERISTICCURVES
20
16
12
8
20
18
16
14
12
10
8
4
6
4
2
0
0
0
20
40
60
80
100
120
140
0.2
0.3
25℃
0.4
0.5
100℃
0.6
0.7
MBR20T45CT
MBR20T45FCT
125℃
FORWORD VOLTAGE,(V)
Tc, Case Temp (℃)
Fig.2- FORWARD CURRENT DERATING CURVE
Fig.1-TYPICAL INSTANTANEOUS FORWARD
10000
100
10
1
1000
0.1
0.01
0
20
25℃
40
60
100℃
80
125℃
100
100
0.01
0.1
1
10
100
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE%
Fig.4- TYPICAL REVERSE CHARACTERISTICS
Fig.3- TYPICAL JUNCTION CAPACITANCE
300
TJ=TJMAX.
8.3ms SINGLE HALF SINE-WAVE
JEDEC Method
250
200
150
100
50
0
0.1
1
10
100
NUMBER OF CYCLES AT 60HZ
Fig.5-MAX. NON-REPETITIVE SURGE CURRENT
Http://www.nhel.com.cn
Data:2014/10/20
Rev.:B
Page:
2
of
3
Niu Hang
Electronic Co. Ltd
Specification
For Approval
MBR20L45CT,MBR20L45FCT
LOW VF SCHOTTKY RECTIFIERS
OUTLINE DRAWINGS
TO-220-3L
ITO-220AB
Packing Information
Product code
Pack
P/T
Box Size L×W×H(mm)
550*150*40
Quantity(pcs/box)
1000
Carton SizeL×W×H(mm)
580*230*175
Quantity(box/carton)
5
MBR20L45CT
MBR20L45FCT
P/T
550*150*40
1000
580*230*175
5
Http://www.nhel.com.cn
Data:2014/10/20
Rev.:B
Page:
3
of
3
相关型号：
MBR20U60CT
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-220AB,
FRONTIER
MBR20U60FCT
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
FRONTIER
©2020 ICPDF网 联系我们和版权申明