2N3658 [NJSEMI]

MAXIMUM ALLOWABLE RATINGS; 最大允许额定值

2N3658


型号：	2N3658
厂家：	NEW JERSEY SEMI-CONDUCTOR PRODUCTS, INC.
描述：	MAXIMUM ALLOWABLE RATINGS 最大允许额定值
文件：	总2页 (文件大小：192K)
下载：	下载PDF数据表文档文件

2N3658M

SILICON CONTROLLED RECTIFIER,400V V(DRM),16A I(T),TO-208AA

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0 STMICROELECTR

2N3658MP

Thyristor SCR 200V 200A 3-Pin(2+Tab) TO-3 Sleeve

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0 NJSEMI

2N3659

TRANSISTOR | BJT | NPN | 170V V(BR)CEO | 500MA I(C) | TO-5

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15 ETC

2N3659

Power Bipolar Transistor, 0.5A I(C), 170V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN

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0 SSDI

2N366

TRANSISTOR | BJT | NPN | 50MA I(C) | TO-22VAR

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16 ETC

2N3660

Small Signal Transistors

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22 CENTRAL

2N3660LEADFREE

Power Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin, TO-39, 3 PIN

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3 CENTRAL

2N3660LEADFREE

Power Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin, TO-39, 3 PIN

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3 CENTRAL

2N3661

Small Signal Transistors

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11 CENTRAL

2N3661

Transistor

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0 MICROSEMI

2N3661E3

Power Bipolar Transistor, 1.5A I(C), 50V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin,

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0 MICROSEMI

2N3661LEADFREE

Power Bipolar Transistor, 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin, TO-39, 3 PIN

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0 CENTRAL

2N3662

TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 25MA I(C) | TO-98

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27 ETC

2N3662

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92

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0 CDIL

2N3663

NPN RF Transistor

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20 FAIRCHILD

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