2N4218 [NJSEMI]

SCR, V(DRM) = 300V TO 399.9V; SCR ,V ( DRM ) = 300V到399.9V
2N4218
型号: 2N4218
厂家: NEW JERSEY SEMI-CONDUCTOR PRODUCTS, INC.    NEW JERSEY SEMI-CONDUCTOR PRODUCTS, INC.
描述:

SCR, V(DRM) = 300V TO 399.9V
SCR ,V ( DRM ) = 300V到399.9V

文件: 总1页 (文件大小:98K)
下载:  下载PDF数据表文档文件

2N4219

SILICON CONTROLLED RECTIFIERS

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11 MOTOROLA

2N4219

SILICON CONTROLLED RECTIFIERS

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20 MOTOROLA

2N4219

Silicon Controlled Rectifier, 1A I(T)RMS, 1600mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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0 SSDI

2N4220

N-Channel Silicon Junction Field-Effect Transistor

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43 INTERFET

2N4220

N-Channel Silicon Junction Field-Effect Transistor

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96 INTERFET

2N4220

N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES

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14 INTERFET

2N4220

N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES

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14 INTERFET

2N4220

N-CHANNEL JFET

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43 INTERSIL

2N4220

N-CHANNEL JFET

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21 NJSEMI

2N4220

Junction FETs Low Frequency/ Low Noise

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16 CENTRAL

2N4220

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-72,

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1 CENTRAL

2N4220A

N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES

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7 INTERFET

2N4220A

N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES

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14 INTERFET

2N4220A

N-Channel Silicon Junction Field-Effect Transistor

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12 INTERFET

2N4220A

N-Channel Silicon Junction Field-Effect Transistor

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31 INTERFET