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元器件品牌
2N5722
[NJSEMI]
SCRS 5AMP, PLANAR; 沙特遥感5AMP ，平面
元器件型号：
2N5722
生产厂家：
NEW JERSEY SEMI-CONDUCTOR PRODUCTS, INC.
描述和应用：
SCRS 5AMP, PLANAR
沙特遥感5AMP ，平面
局域网
PDF文件：
总2页 (文件大小：185K)
下载文档：
下载PDF数据表文档文件
型号参数：2N5722参数
查看货源
2N5723
SCRS 5AMP, PLANAR
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156
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12
NJSEMI
2N5724
Silicon Controlled Rectifier, 0.7065A I(T)RMS, 60V V(DRM), 60V V(RRM), 1 Element, TO-205AD, TO-39, 3 PIN
Warning
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156
-
0
MICROSEMI
2N5726
Silicon Controlled Rectifier, 0.7065A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-205AD, TO-39, 3 PIN
Warning
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156
-
0
MICROSEMI
2N5726
Silicon Controlled Rectifier, 0.39A I(T)RMS, 390mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-5, TO-5, 3 PIN
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156
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0
SSDI
2N5726
Silicon Controlled Rectifier, 0.7065A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-205AD, TO-39, 3 PIN
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156
-
0
MICROSEMI
2N5727
Silicon Controlled Rectifier, 0.7065A I(T)RMS, 300V V(DRM), 300V V(RRM), 1 Element, TO-205AD, TO-39, 3 PIN
Warning
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156
-
0
MICROSEMI
2N5727
Silicon Controlled Rectifier, 0.39A I(T)RMS, 390mA I(T), 300V V(DRM), 300V V(RRM), 1 Element, TO-5, TO-5, 3 PIN
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156
-
0
SSDI
2N5727
Silicon Controlled Rectifier, 0.7065A I(T)RMS, 300V V(DRM), 300V V(RRM), 1 Element, TO-205AD, TO-39, 3 PIN
Warning
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156
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0
MICROSEMI
2N5729
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-5
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16
ETC
2N5729
NPN TO-39/TO-5
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156
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22
NJSEMI
2N5729
Transistor
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156
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0
ASI
2N5729
Power Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,
Warning
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156
-
0
APITECH
2N5729
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin,
Warning
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156
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0
MICROSEMI
2N5730
COLLECTOR CURRENT = 10 AMPS NPN TYPES
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156
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22
ETC
2N5730
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin, TO-59, 3 PIN
Warning
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156
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0
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