IN647 [NJSEMI]

TRANSIENT VOLTAGE SUPPRESSOR; 瞬态电压抑制器
IN647
元器件型号: IN647
生产厂家: NEW JERSEY SEMI-CONDUCTOR PRODUCTS, INC.    NEW JERSEY SEMI-CONDUCTOR PRODUCTS, INC.
描述和应用:

TRANSIENT VOLTAGE SUPPRESSOR
瞬态电压抑制器

PDF文件: 总1页 (文件大小:347K)
下载文档:  下载PDF数据表文档文件
型号参数:IN647参数

IN64B4

HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS.

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1 NJSEMI

IN64B7

HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS.

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1 NJSEMI

IN6626

Rectifier Diode, 1 Phase, 1 Element, 1.55A, Silicon, HERMETIC SEALED, GLASS, EPAK-2

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0 MICROSEMI

IN6626US

Rectifier Diode, 1 Phase, 1 Element, 1.55A, 200V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN

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0 MICROSEMI

IN6626USTR

Rectifier Diode, 1 Phase, 1 Element, 1.55A, 200V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN

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0 MICROSEMI

IN6627

Rectifier Diode, 1 Phase, 1 Element, 1.55A, Silicon, HERMETIC SEALED, GLASS, EPAK-2

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0 MICROSEMI

IN6627US

Rectifier Diode, 1 Phase, 1 Element, 1.55A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN

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0 MICROSEMI

IN6627USTR

Rectifier Diode, 1 Phase, 1 Element, 1.55A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN

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0 MICROSEMI

IN6628

Rectifier Diode, 1 Phase, 1 Element, 1.55A, Silicon, HERMETIC SEALED, GLASS, EPAK-2

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0 MICROSEMI

IN6628US

Rectifier Diode, 1 Phase, 1 Element, 1.55A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN

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0 MICROSEMI

IN6628USTR

Rectifier Diode, 1 Phase, 1 Element, 1.55A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN

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0 MICROSEMI

IN6629US

Rectifier Diode, 1 Phase, 1 Element, 1.15A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN

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0 MICROSEMI

IN6630

Rectifier Diode, 1 Phase, 1 Element, 1.15A, Silicon, HERMETIC SEALED, GLASS, EPAK-2

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0 MICROSEMI

IN6630US

Rectifier Diode, 1 Phase, 1 Element, 1.15A, 900V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN

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0 MICROSEMI

IN6630USTR

Rectifier Diode, 1 Phase, 1 Element, 1.15A, 900V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN

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0 MICROSEMI