SM5010CL5S [NPC]
Crystal Oscillator Module ICs; 晶体振荡器模块集成电路
| 型号： | SM5010CL5S |
| 厂家： | 
NIPPON PRECISION CIRCUITS INC |
| 描述： | Crystal Oscillator Module ICs |
| 文件： | 总25页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM5010 series
Crystal Oscillator Module ICs
OVERVIEW
The SM5010 series are crystal oscillator module ICs. They incorporate oscillator and output buffer circuits,
employing built-in oscillator capacitors and feedback resistors with excellent frequency response, eliminating the
need for external components to form a stable crystal oscillator. There are 7 oscillator configurations available for
design and application optimization.
FEATURES
ꢀ 7 types of oscillation circuit structure
ꢀ 2.7 to 5.5V operating supply voltage
ꢀ Capacitors C , C built-in
For fundamental oscillator
G
D
ꢀ Inverter amplifier feedback resistor built-in
ꢀ Output duty level
• 5010A×× :Simple structure with low frequency vari-
ation
• TTL level: AK×, BK×, HK×
• 5010B×× :Low crystal current type with R built-in
D
• CMOS level: AN×, AH×, BN×, BH×, CL×, DN×,
oscillation circuit
EA×, FN×, FH×, HN×
• 5010CL× :Oscillation stop function built-in
ꢀ Oscillator frequency output (f , f /2, f /4, f /8, f /16
O
O
O
O
O
• 5010DN×:External capacitors, C and C required
G
D
determined by internal connection)
ꢀ Standby function
• 5010EA× :Low current consumption type
For 3rd overtone oscillator
ꢀ Pull-up resistor built-in
ꢀ 8-pin SOP (SM5010×××S)
ꢀ Chip form (CF5010×××)
• 5010F×× :Suitable for round blank
• 5010H×× :External resistor, R required
f
SERIES CONFIGURATION
For Fundamental Oscillator
Built-in
capacitance
Operating
supply
voltage range
[V]
Output
current
(V = 5V)
Standby mode
INHN input
level
(V = 5V)
DD
R
[Ω]
Output duty
level
Output
frequency
1
D
Version
C
[pF]
C
[pF]
DD
Oscillator
stop function
G
D
Output state
[mA]
CF5010AN1
CF5010AN2
CF5010AN3
CF5010AN4
CF5010AK1
CF5010AH1
CF5010AH2
CF5010AH3
CF5010AH4
CF5010BN1
CF5010BN2
CF5010BN3
CF5010BN4
CF5010BN5
CF5010BK1
CF5010BH1
CF5010BH2
CF5010BH3
CF5010BH4
CF5010CL1
CF5010CL2
CF5010CL3
CF5010CL4
CF5010CL5
CF5010DN1
CF5010EA1
CF5010EA2
CMOS
f
O
f /2
O
High impedance
High impedance
High impedance
2.7 to 5.5
4.5 to 5.5
2.7 to 5.5
29
29
–
–
–
16
16
4
TTL
TTL
TTL
No
No
No
CMOS/TTL
TTL
f /4
O
f /8
O
29
29
f
O
f
O
f /2
O
29
29
CMOS
CMOS
f /4
O
f /8
O
f
O
f /2
O
2.7 to 5.5
22
22
820
16
f /4
O
TTL
No
High impedance
CMOS/TTL
TTL
f /8
O
f /16
O
4.5 to 5.5
2.7 to 5.5
22
22
22
22
820
820
16
4
f
TTL
TTL
No
No
High impedance
High impedance
O
f
O
f /2
O
CMOS
f /4
O
f /8
O
f
O
f /2
O
2.7 to 5.5
18
18
–
16
CMOS
f /4
O
CMOS
Yes
High impedance
f /8
O
f /16
O
2.7 to 5.5
2.7 to 5.5
–
–
820
820
16
4
CMOS
CMOS
f
TTL
TTL
No
High impedance
LOW
O
f
O
10
15
Yes
f /2
O
1. Package devices have designation SM5010×××S.
SEIKO NPC CORPORATION —1
SM5010 series
SERIES CONFIGURATION
For 3rd Overtone Oscillator
Operating
Built-in capacitance
[pF] [pF]
Output current
(V = 5V)
R
Output duty
level
f
Version
supply voltage
range [V]
gm ratio
DD
[mA]
[kΩ]
C
C
D
G
CF5010FNA
CF5010FNC
CF5010FND
CF5010FNE
CF5010FHA
CF5010FHC
CF5010FHD
CF5010FHE
CF5010HN1
CF5010HK1
13
15
4.2
3.1
2.2
2.2
4.2
3.1
2.2
2.2
200
200
2.7 to 5.5
4.5 to 5.5
11
13
8
17
17
15
15
17
17
15
17
17
1.00
16
CMOS
CMOS
13
11
13
8
4.5 to 5.5
1.00
4
4.5 to 5.5
4.5 to 5.5
1.17
1.17
13
13
16
16
CMOS
TTL
ORDERING INFORMATION
Device
Package
SM5010×××S
CF5010×××–1
8-pin SOP
Chip form
PACKAGE DIMENSIONS
(Unit: mm)
• 8-pin SOP
+
−
0.1
0.05
0.15
0.695typ
5.2 0.3
1.27
0 to 10
0.10
0.4 0.1
M
0.12
SEIKO NPC CORPORATION —2
SM5010 series
PAD LAYOUT
PINOUT
(Unit: µm)
(Top view)
VDD
Q
(920,1180)
1
2
3
4
8
7
6
5
VDD
NC
NC
Q
HA5010
INHN
Y
XT
XTN
VSS
(0,0)
INHN XT XTN VSS
X
Chip size: 0.92 × 1.18mm
Chip thickness: 300 30ꢀm
Chip base: V level
DD
PIN DESCRIPTION and PAD DIMENSIONS
Pad dimensions [µm]
Number
Name
I/O
Description
X
Y
Output state control input. Standby mode when LOW, pull-up resistor built in. In
the case of the 5010CL×, the oscillator stops and Power-saving pull-up resistor is
built-in to reduce current consumption at standby mode.
1
INHN
I
195
174.4
2
3
4
XT
I
Amplifier input.
385
575
765
174.4
174.4
174.4
Crystal oscillator connection pins.
Crystal oscillator connected between XT and XTN
Amplifier output.
XTN
VSS
O
–
Ground
Output. Output frequency (f , f /2, f /4, f /8, f /16) determined by internal
O
connection
O
O
O
O
5
Q
O
757.6
1017.6
6
7
8
NC
NC
–
–
–
No connection
No connection
Supply voltage
–
–
–
–
VDD
165.4
1014.6
SEIKO NPC CORPORATION —3
SM5010 series
BLOCK DIAGRAM
For Fundamental Oscillator
ꢀ 5010A××, B××, CL×, DN×, EA× series
VDD VSS
XTN
XT
C
G
C
D
Rf
1/2 1/2 1/2 1/2
R
D
Q
INHN
For 3rd Overtone Oscillator
ꢀ 5010F××, H×× series
VDD VSS
XTN
C
G
C
D
Rf
Q
XT
INHN
SEIKO NPC CORPORATION —4
SM5010 series
FUNCTIONAL DESCRIPTION
Standby Function
5010AH×, AK×, AN×, BH×, BK×, BN×, DN×, FN×, FH×, HN×, HK× series
When INHN goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop.
5010CL× series
When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
5010EA× series
When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes LOW.
Version
INHN
Q
Oscillator
AH×, AK×, AN×, BH×,
BK×, BN×, DN×, FH×,
FH×, HN×, HK× series
HIGH (or open)
Any f , f /2, f /4, f /8 or f /16 output frequency
O
Normal operation
O
O
O
O
LOW
High impedance
Any f , f /2, f /4, f /8 or f /16 output frequency
Normal operation
HIGH (or open)
LOW
Normal operation
Stopped
O
O
O
O
O
CL× series
EA× series
High impedance
Either f or f /2 output frequency
HIGH (or open)
LOW
Normal operation
Stopped
O
O
LOW
Power-saving Pull-up Resistor (CL series only)
The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW
(standby state), the pull-up resistance becomes large to reduce the current consumption during standby.
SEIKO NPC CORPORATION —5
SM5010 series
SPECIFICATIONS
Absolute Maximum Ratings
V
= 0V
SS
Parameter
Symbol
Condition
Rating
Unit
V
Supply voltage range
Input voltage range
V
−0.5 to +7.0
DD
V
−0.5 to V + 0.5
DD
V
IN
Output voltage range
Operating temperature range
V
−0.5 to V + 0.5
DD
V
OUT
T
−40 to +85
−65 to +150
−55 to +125
10
°C
opr
Chip form
Storage temperature range
T
°C
stg
8-pin SOP
AH×, BH×, FH×, EA×
Output current
I
mA
OUT
AN×, AK×, BN×, BK×, CL×, DN×,
FN×, HN×, HK×
25
Power dissipation
P
8-pin SOP
500
mW
D
Recommended Operating Conditions
3V operation
V
= 0V
SS
Parameter
Symbol
Version
All version
All version
5010AN×
5010AH×
5010BN×
5010BH×
5010CL×
5010DN1
5010EA×
5010FN×
5010AN×
5010AH×
5010BN×
5010BH×
5010CL×
5010DN1
5010EA×
5010FN×
Condition
Rating
Unit
V
Operating supply voltage
Input voltage
V
2.7 to 3.6
DD
V
V
to V
DD
V
IN
SS
−10 to +70
Operating temperature
T
°C
OPR
−20 to +80
−10 to +70
2 to 30
2 to 16
2 to 30
2 to 16
Operating frequency
f
C ≤ 15pF
MHz
L
2 to 30
22 to 40
SEIKO NPC CORPORATION —6
SM5010 series
5V operation
= 0V
V
SS
Parameter
Symbol
Version
All version
All version
5010AN×
5010AK×
5010AH×
5010BN×
5010BK×
5010BH×
5010CL×
5010DN1
Condition
Rating
Unit
V
Operating supply voltage
Input voltage
V
4.5 to 5.5
DD
V
V
to V
DD
V
IN
SS
−40 to +85
Operating temperature
T
°C
OPR
C ≤ 15pF, f = 2 to 30MHz
L
5010EA×
5010FN×
5010FH×
C ≤ 15pF, f = 2 to 40MHz
−10 to +70
−20 to +80
−15 to +75
−20 to +80
−15 to +75
L
C ≤ 50pF, 30MHz ≤ f ≤ 50MHz
L
C ≤ 15pF, 50MHz ≤ f ≤ 70MHz
L
C ≤ 15pF, 30MHz ≤ f ≤ 50MHz
L
C ≤ 15pF, 50MHz ≤ f ≤ 60MHz
L
5010HN1
5010HK1
−40 to +85
5010AN× C ≤ 50pF
L
5010AK×
C ≤ 15pF
L
5010AH×
5010BN× C ≤ 50pF
L
2 to 30
5010BK×
C ≤ 15pF
L
5010BH×
5010CL×
C ≤ 50pF
L
Operating frequency
f
5010DN1
MHz
5010EA× C ≤ 15pF, Ta = − 40 to + 85°C
2 to 40
30 to 50
50 to 70
30 to 50
50 to 60
L
C ≤ 50pF, Ta = − 20 to + 80°C
L
5010FN×
C ≤ 15pF, Ta = − 15 to + 75°C
L
C ≤ 15pF, Ta = − 20 to + 80°C
L
5010FH×
C ≤ 15pF, Ta = − 15 to + 75°C
L
5010HN1 C ≤ 50pF
L
22 to 50
5010HK1 C ≤ 15pF
L
SEIKO NPC CORPORATION —7
SM5010 series
Electrical Characteristics
5010AN×, BN×, DN× series
3V operation: V = 2.7 to 3.6V, V = 0V, Ta = −10 to +70°C unless otherwise noted.
DD
SS
Rating
typ
2.4
0.3
–
Parameter
Symbol
Condition
Q: Measurement cct 1, V = 2.7V, I = 8mA
Unit
min
2.1
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
V
V
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 2.7V, I = 8mA
DD OL
0.4
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.5
10
10
10
7
IL
V
V
= V
= V
–
–
Q: Measurement cct 2, INHN = LOW,
= 3.6V
OH
DD
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
5010×N1
5010×N2
5010×N3
5010×N4
5010×N5
–
5
–
3.5
2.5
2
Measurement cct 3, load cct 1,
INHN = open, C = 15pF, f = 30MHz
Current consumption
I
–
5
mA
DD
L
–
4
–
2
4
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
80
100
200
250
500
kΩ
kΩ
UP2
R
f
Oscillator amplifier output
resistance
R
Design value
5010B××
690
820
940
Ω
D
5010A××
5010B××
5010A××
5010B××
26
20
26
20
29
22
29
22
32
24
32
24
C
G
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
pF
C
D
5010AN×, AK×, BN×, BK×, DN× series
5V operation: V = 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Q: Measurement cct 1, V = 4.5V, I = 16mA
Unit
min
3.9
–
typ
4.2
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
V
V
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 4.5V, I = 16mA
DD OL
0.4
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.8
10
10
30
18
12
10
10
IL
V
V
= V
= V
–
–
Q: Measurement cct 2, INHN = LOW,
= 5.5V
OH
DD
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
5010×N1
5010×N2
5010×N3
5010×N4
5010×N5
–
15
9
–
Measurement cct 3, load cct 1,
INHN = open, C = 50pF, f = 30MHz
–
6
L
Current consumption
I
mA
DD
–
5
–
5
Measurement cct 3, load cct 2,
INHN = open, C = 15pF, f = 30MHz
5010×K1
–
10
20
L
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
80
100
200
250
500
kΩ
kΩ
UP2
R
f
Oscillator amplifier output
resistance
R
Design value
5010B××
690
820
940
Ω
D
5010A××
5010B××
5010A××
5010B××
26
20
26
20
29
22
29
22
32
24
32
24
C
G
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
pF
C
D
SEIKO NPC CORPORATION —8
SM5010 series
5010AH×, BH× series
3V operation: V = 2.7 to 3.6V, V = 0V, Ta = −10 to +70°C unless otherwise noted.
DD
SS
Rating
typ
2.4
0.3
–
Parameter
Symbol
Condition
Q: Measurement cct 1, V = 2.7V, I = 2mA
Unit
min
2.1
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
V
V
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 2.7V, I = 2mA
DD OL
0.5
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.5
10
10
6
IL
V
V
= V
= V
–
–
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 3.6V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
5010×H1
5010×H2
5010×H3
5010×H4
–
3
–
2
4
Measurement cct 3, load cct 1,
INHN = open, C = 15pF, f = 16MHz
Current consumption
I
mA
DD
L
–
1.5
1.5
100
200
3
–
2.5
250
500
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
80
kΩ
kΩ
UP2
R
f
Oscillator amplifier output
resistance
R
Design value
5010B××
690
820
940
Ω
D
5010A××
5010B××
5010A××
5010B××
26
20
26
20
29
22
29
22
32
24
32
24
C
G
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
pF
C
D
5V operation: V = 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Q: Measurement cct 1, V = 4.5V, I = 4mA
Unit
min
3.9
–
typ
4.2
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
V
V
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 4.5V, I = 4mA
DD OL
0.5
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.8
10
10
18
12
10
8
IL
V
V
= V
= V
–
–
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 5.5V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
5010×H1
5010×H2
5010×H3
5010×H4
–
9
–
6
Measurement cct 3, load cct 1,
INHN = open, C = 15pF, f = 30MHz
Current consumption
I
mA
DD
L
–
5
–
4
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
80
100
200
250
500
kΩ
kΩ
UP2
R
f
Oscillator amplifier output
resistance
R
Design value
5010B××
690
820
940
Ω
D
5010A××
5010B××
5010A××
5010B××
26
20
26
20
29
22
29
22
32
24
32
24
C
G
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
pF
C
D
SEIKO NPC CORPORATION —9
SM5010 series
5010CL× series
3V operation: V = 2.7 to 3.6V, V = 0V, Ta = −20 to +80°C unless otherwise noted.
DD
SS
Rating
typ
2.4
0.3
–
Parameter
Symbol
Condition
Unit
min
2.2
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.7V, I = 8mA
DD OH
V
V
V
V
OH
V
Q: Measurement cct 2, V = 2.7V, I = 8mA
DD OL
–
0.4
–
OL
V
INHN
INHN
0.7V
IH
DD
V
–
–
–
0.3V
DD
IL
V
V
= V
= V
–
10
10
10
7
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 3.6V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
5010CL1
5010CL2
5010CL3
5010CL4
5010CL5
–
5
–
3.5
2.5
2
Measurement cct 3, load cct 1,
INHN = open, C = 15pF, f = 30MHz
Current consumption
I
–
5
mA
DD
L
–
4
–
2
4
Standby current
I
Measurement cct 6, INHN = LOW
Measurement cct 4
–
–
5
ꢀA
MΩ
kΩ
kΩ
ST
R
2
4
15
250
500
20
20
UP1
INHN pull-up resistance
Feedback resistance
Built-in capacitance
R
40
80
16
16
100
200
18
18
UP2
R
Measurement cct 5
f
C
G
Design value. A monitor pattern on a wafer is tested.
pF
C
D
5V operation: V = 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
DD
SS
Rating
typ
4.2
0.3
–
Parameter
Symbol
Condition
Unit
min
4.0
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 4.5V, I = 16mA
DD OH
V
V
V
V
OH
V
Q: Measurement cct 2, V = 4.5V, I = 16mA
DD OL
–
0.4
–
OL
V
INHN
INHN
0.7V
IH
DD
V
–
–
–
0.3V
DD
IL
V
V
= V
= V
–
10
10
30
18
12
10
10
10
8
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 5.5V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
5010CL1
5010CL2
5010CL3
5010CL4
5010CL5
–
15
9
–
Measurement cct 3, load cct 1,
INHN = open, C = 50pF, f = 30MHz
Current consumption
I
–
6
mA
DD
L
–
5
–
5
Standby current
I
Measurement cct 6, INHN = LOW
Measurement cct 4
–
–
ꢀA
MΩ
kΩ
kΩ
ST
R
1
2
UP1
INHN pull-up resistance
Feedback resistance
Built-in capacitance
R
40
80
16
16
100
200
18
18
250
500
20
20
UP2
R
Measurement cct 5
f
C
G
Design value. A monitor pattern on a wafer is tested.
pF
C
D
SEIKO NPC CORPORATION —10
SM5010 series
5010EA× series
3V operation: V = 2.7 to 3.6V, V = 0V, Ta = −10 to +70°C unless otherwise noted.
DD
SS
Rating
typ
2.4
0.3
–
Parameter
Symbol
Condition
Unit
min
2.1
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.7V, I = 2mA
DD OH
V
V
V
V
OH
V
Q: Measurement cct 2, V = 2.7V, I = 2mA
DD OL
0.5
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.5
8
IL
5010EA1
5010EA2
–
4
Measurement cct 3, load cct 1,
INHN = open, C = 15pF, f = 30MHz
Current consumption
I
mA
DD
L
–
2.5
100
200
5
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
80
250
500
kΩ
kΩ
UP2
R
f
Oscillator amplifier output
resistance
R
Design value
690
820
940
Ω
D
C
9
10
15
11
17
G
Built-in capacitance
Design value. A monitor pattern on a wafer is tested.
pF
C
13
D
5V operation: V = 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
DD
SS
Rating
typ
4.2
0.3
–
Parameter
Symbol
Condition
Unit
min
3.9
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 4.5V, I = 3.2mA
DD OH
V
V
V
V
OH
V
Q: Measurement cct 2, V = 4.5V, I = 3.2mA
DD OL
0.4
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.8
12
IL
5010EA1
5010EA2
5010EA1
5010EA2
–
6
Measurement cct 3, load cct 1,
INHN = open, C = 15pF, f = 30MHz
I
DD1
L
–
5
10
Current consumption
mA
–
9
18
Measurement cct 3, load cct 1,
INHN = open, C = 15pF, f = 40MHz
I
DD2
L
–
6
12
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
80
100
200
250
500
kΩ
kΩ
UP2
R
f
Oscillator amplifier output
resistance
R
Design value
690
820
940
Ω
D
C
9
10
15
11
17
G
Built-in capacitance
Design value. A monitor pattern on a wafer is tested.
pF
C
13
D
SEIKO NPC CORPORATION —11
SM5010 series
5010FN× series
3V operation: V = 2.7 to 3.6V, V = 0V, Ta = −10 to +70°C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
2.2
–
typ
2.4
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.7V, I = 8mA
DD OH
V
V
V
V
OH
V
Q: Measurement cct 2, V = 2.7V, I = 8mA
DD OL
0.4
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.5
10
10
IL
V
V
= V
= V
–
–
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 3.6V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
5010FNA, FNC
f = 30MHz
–
–
8
16
20
Measurement cct 3, load cct 1,
INHN = open, C = 15pF
Current consumption
I
mA
DD
L
5010FND
f = 40MHz
10
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
100
4.2
3.1
2.2
13
250
4.83
3.57
2.53
14.3
12.1
14.3
16.5
18.7
18.7
kΩ
kΩ
UP
5010FNA
5010FNC
5010FND
5010FNA
5010FNC
5010FND
5010FNA
5010FNC
5010FND
3.57
2.63
1.87
11.7
9.9
R
f
C
11
G
11.7
13.5
15.3
15.3
13
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
pF
15
C
17
D
17
SEIKO NPC CORPORATION —12
SM5010 series
5V operation: V = 4.5 to 5.5V, V = 0V
DD
SS
30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 70MHz: Ta = −15 to +75°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
3.9
–
typ
4.2
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 4.5V, I = 16mA
DD OH
V
V
V
V
OH
V
Q: Measurement cct 2, V = 4.5V, I = 16mA
DD OL
0.4
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.8
10
10
IL
V
V
= V
= V
–
–
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 5.5V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
Measurement cct 3, load cct 1,
INHN = open, C = 15pF
5010FNE
f = 70MHz
I
–
–
–
25
23
25
50
45
50
DD1
L
5010FNA, FNC
f = 40MHz
Current consumption
mA
Measurement cct 3, load cct 1,
INHN = open, C = 50pF
I
DD2
L
5010FND
f = 50MHz
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
100
4.2
3.1
2.2
2.2
13
11
13
8
250
4.83
3.57
2.53
2.53
14.3
12.1
14.3
8.8
kΩ
kΩ
UP
5010FNA
5010FNC
5010FND
5010FNE
5010FNA
5010FNC
5010FND
5010FNE
5010FNA
5010FNC
5010FND
5010FNE
3.57
2.63
1.87
1.87
11.7
9.9
R
f
C
G
11.7
7.2
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
pF
13.5
15.3
15.3
13.5
15
17
17
15
16.5
18.7
18.7
16.5
C
D
SEIKO NPC CORPORATION —13
SM5010 series
5010FH× series
5V operation: V = 4.5 to 5.5V, V = 0V
DD
SS
30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 60MHz: Ta = −15 to +75°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
3.9
–
typ
4.2
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 4.5V, I = 4mA
DD OH
V
V
V
V
OH
V
Q: Measurement cct 2, V = 4.5V, I = 4mA
DD OL
0.5
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.8
10
10
IL
V
V
= V
= V
–
–
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 5.5V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
5010FHA, FHC
f = 40MHz
–
–
–
13
15
17
26
30
34
Measurement cct 3, load cct 1,
INHN = open, C = 15pF
5010FHD
f = 50MHz
Current consumption
I
mA
DD
L
5010FHE
f = 60MHz
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
100
4.2
3.1
2.2
2.2
13
11
13
8
250
4.83
3.57
2.53
2.53
14.3
12.1
14.3
8.8
kΩ
kΩ
UP
5010FHA
5010FHC
5010FHD
5010FHE
5010FHA
5010FHC
5010FHD
5010FHE
5010FHA
5010FHC
5010FHD
5010FHE
3.57
2.63
1.87
1.87
11.7
9.9
R
f
C
G
11.7
7.2
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
pF
13.5
15.3
15.3
13.5
15
17
17
15
16.5
18.7
18.7
16.5
C
D
5010HN×, HK× series
5V operation: V = 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Q: Measurement cct 1, V = 4.5V, I = 16mA
Unit
min
3.9
–
typ
4.2
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
V
V
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 4.5V, I = 16mA
DD OL
0.4
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.8
10
10
IL
V
V
= V
= V
–
–
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 5.5V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
Measurement cct 3, load cct 2,
INHN = open, C = 15pF, f = 50MHz
I
5010HK1
5010HN1
–
–
20
25
40
50
DD1
L
Current consumption
mA
Measurement cct 3, load cct 1,
INHN = open, C = 50pF, f = 50MHz
I
DD2
L
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
80
100
200
13
250
500
kΩ
kΩ
UP
R
f
C
11.7
15.3
14.3
18.7
G
Built-in capacitance
Design value. A monitor pattern on a wafer is tested.
pF
C
17
D
SEIKO NPC CORPORATION —14
SM5010 series
Switching Characteristics
5010AN×, BN×, DN× series
3V operation/Duty level: CMOS
V
= 2.7 to 3.6V, V = 0V, Ta = −10 to +70°C unless otherwise noted.
SS
DD
Rating
typ
Parameter
Symbol
Condition
Unit
min
–
max
6.0
Output rise time
Output fall time
t
Measurement cct 6, load cct 1, C = 15pF, 0.1V to 0.9V
DD
3.0
ns
ns
r1
L
DD
DD
t
Measurement cct 6, load cct 1, C = 15pF, 0.9V to 0.1V
DD
–
3.0
6.0
f1
L
Measurement cct 6, load cct 1, V = 3.0V, Ta = 25°C,
L
1
DD
Output duty cycle
Duty
40
–
60
%
C = 15pF, f = 30MHz
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 1, V = 3.0V, Ta = 25°C,
L
DD
C = 15pF
t
PZL
1. The duty cycle characteristic is checked the sample chips of each production lot.
5010AN×, AK×, BN×, BK×, DN× series
5V operation/Duty level: CMOS (5010AN×, BN×, DN1)
V
= 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
SS
DD
Rating
typ
Parameter
Symbol
Condition
Unit
min
–
max
4.0
8.0
4.0
8.0
t
t
C = 15pF
L
2.0
r1
Measurement cct 6, load cct 1,
0.1V to 0.9V
Output rise time
ns
DD
DD
C = 50pF
L
–
4.0
r2
t
t
C = 15pF
L
–
2.0
f1
Measurement cct 6, load cct 1,
0.9V to 0.1V
Output fall time
ns
%
DD
DD
C = 50pF
L
–
4.0
f2
Measurement cct 6, load cct 1, V = 5.0V, Ta = 25°C,
1
DD
Output duty cycle
Duty
45
–
55
C = 50pF, f = 30MHz
L
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 1, V = 5.0V, Ta = 25°C,
L
DD
C = 15pF
t
PZL
1. The duty cycle characteristic is checked the sample chips of each production lot.
5V operation/Duty level:TTL (5010×K1, AN2, AN3, AN4, BN2, BN3, BN4, BN5)
V
= 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
SS
DD
Rating
typ
Parameter
Symbol
Condition
Unit
min
–
max
3.0
Output rise time
Output fall time
t
Measurement cct 6, load cct 2, C = 15pF, 0.4V to 2.4V
L
1.5
ns
ns
r3
t
Measurement cct 6, load cct 2, C = 15pF, 2.4V to 0.4V
L
–
1.5
3.0
f3
Measurement cct 6, load cct 2, V = 5.0V, Ta = 25°C,
L
1
DD
Output duty cycle
Duty
45
–
55
%
C = 15pF, f = 30MHz
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 2, V = 5.0V, Ta = 25°C,
L
DD
C = 15pF
t
PZL
1. The duty cycle characteristic is checked the sample chips of each production lot.
SEIKO NPC CORPORATION —15
SM5010 series
5010AH×, BH× series
3V operation/Duty level: CMOS
V
= 2.7 to 3.6V, V = 0V, Ta = −10 to +70°C unless otherwise noted.
SS
DD
Rating
Parameter
Symbol
Condition
Unit
min
–
typ
8
max
16
Output rise time
Output fall time
t
Measurement cct 6, load cct 1, C = 15pF, 0.1V to 0.9V
DD
ns
ns
r1
L
DD
DD
t
Measurement cct 6, load cct 1, C = 15pF, 0.9V to 0.1V
DD
–
8
16
f1
L
Measurement cct 6, load cct 1, V = 3.0V, Ta = 25°C,
L
1
DD
Output duty cycle
Duty
40
–
60
%
C = 15pF, f = 16MHz
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 1, V = 3.0V, Ta = 25°C,
L
DD
C = 15pF
t
PZL
1. The duty cycle characteristic is checked the sample chips of each production lot.
5V operation/Duty level: CMOS
V
= 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
SS
DD
Rating
Parameter
Symbol
Condition
Unit
min
–
typ
5
max
10
t
t
C = 15pF
L
r1
Measurement cct 6, load cct 1,
0.1V to 0.9V
Output rise time
ns
DD
DD
C = 50pF
L
–
13
5
26
r2
t
t
C = 15pF
L
–
10
f1
Measurement cct 6, load cct 1,
0.9V to 0.1V
Output fall time
ns
%
DD
DD
C = 50pF
L
–
13
26
f2
Measurement cct 6, load cct 1, V = 5.0V, Ta = 25°C,
L
1
DD
Output duty cycle
Duty
45
–
55
C = 15pF, f = 30MHz
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 1, V = 5.0V, Ta = 25°C,
L
DD
C = 15pF
t
PZL
1. The duty cycle characteristic is checked the sample chips of each production lot.
SEIKO NPC CORPORATION —16
SM5010 series
5010CL× series
3V operation/Duty level: CMOS
V
= 2.7 to 3.6V, V = 0V, Ta = −20 to +80°C unless otherwise noted.
SS
DD
Rating
typ
Parameter
Symbol
Condition
Unit
min
–
max
4.0
6.0
4.0
6.0
t
C = 15pF
L
2.0
r1
Measurement cct 6, load cct 1,
0.1V to 0.9V
Output rise time
ns
DD
DD
t
C = 30pF
L
–
3.0
r4
t
C = 15pF
L
–
2.0
f1
Measurement cct 6, load cct 1,
0.9V to 0.1V
Output fall time
ns
%
DD
DD
t
C = 30pF
L
–
3.0
f4
Measurement cct 6, load cct 1, V = 3.0V, Ta = 25°C,
1
DD
Output duty cycle
Duty
45
–
55
C = 15pF, f = 30MHz
L
2
Output disable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 1, V = 3.0V, Ta = 25°C,
L
DD
2
C = 15pF
Output enable delay time
t
PZL
1. The duty cycle characteristic is checked the sample chips of each production lot.
2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
5V operation/Duty level: CMOS
V
= 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
SS
DD
Rating
typ
Parameter
Symbol
Condition
Unit
min
–
max
3.0
8.0
3.0
8.0
t
C = 15pF
L
1.5
r1
Measurement cct 6, load cct 1,
0.1V to 0.9V
Output rise time
ns
DD
DD
t
C = 50pF
L
–
4.0
r2
t
C = 15pF
L
–
1.5
f1
Measurement cct 6, load cct 1,
0.9V to 0.1V
Output fall time
ns
%
DD
DD
t
C = 50pF
L
–
4.0
f2
Measurement cct 6, load cct 1, V = 5.0V, Ta = 25°C,
1
DD
Output duty cycle
Duty
40
–
60
C = 50pF, f = 30MHz
L
2
Output disable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 1, V = 5.0V, Ta = 25°C,
L
DD
2
C = 15pF
Output enable delay time
t
PZL
1. The duty cycle characteristic is checked the sample chips of each production lot.
2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
SEIKO NPC CORPORATION —17
SM5010 series
5010EA× series
3V operation/Duty level: CMOS
V
= 2.7 to 3.6V, V = 0V, Ta = −10 to +70°C unless otherwise noted.
SS
DD
Rating
Parameter
Symbol
Condition
Unit
min
–
typ
8
max
16
Output rise time
Output fall time
t
Measurement cct 6, load cct 1, C = 15pF, 0.1V to 0.9V
DD
ns
ns
r1
L
DD
DD
t
Measurement cct 6, load cct 1, C = 15pF, 0.9V to 0.1V
DD
–
8
16
f1
L
Measurement cct 6, load cct 1, V = 3.0V, Ta = 25°C,
L
1
DD
Output duty cycle
Duty
40
–
60
%
C = 15pF, f = 30MHz
2
Output disable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 1, V = 3.0V, Ta = 25°C,
L
DD
2
C = 15pF
Output enable delay time
t
PZL
1. The duty cycle characteristic is checked the sample chips of each production lot.
2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
5V operation/Duty level: CMOS
V
= 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
SS
DD
Rating
Parameter
Symbol
Condition
Unit
ns
min
–
typ
5
max
10
t
C = 15pF
L
r1
Measurement cct 6, load cct 1,
0.1V to 0.9V
Output rise time
Output fall time
Output duty cycle
DD
DD
t
C = 50pF
L
–
13
5
26
r2
t
C = 15pF
L
–
10
f1
Measurement cct 6, load cct 1,
0.9V to 0.1V
ns
DD
DD
t
C = 50pF
L
–
13
–
26
f2
Duty1
Duty2
f = 30MHz
f = 40MHz
45
40
–
55
Measurement cct 6, load cct 1,
= 5.0V, Ta = 25°C, C = 15pF
1
%
V
DD
L
–
60
2
Output disable delay time
t
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 1, V = 5.0V, Ta = 25°C,
DD
2
C = 15pF
L
Output enable delay time
t
–
–
PZL
1. The duty cycle characteristic is checked the sample chips of each production lot.
2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
SEIKO NPC CORPORATION —18
SM5010 series
5010FN× series
3V operation/Duty level: CMOS
V
= 2.7 to 3.6V, V = 0V, Ta = −10 to +70°C unless otherwise noted.
SS
DD
Rating
typ
Parameter
Symbol
Condition
Unit
min
–
max
6.0
Output rise time
Output fall time
t
Measurement cct 6, load cct 1, C = 15pF, 0.1V to 0.9V
DD
3.0
ns
ns
r1
L
DD
DD
t
Measurement cct 6, load cct 1, C = 15pF, 0.9V to 0.1V
DD
–
3.0
6.0
f1
L
Measurement cct 6, load cct 1, V = 3.0V, Ta = 25°C,
L
1
DD
Output duty cycle
Duty
40
–
60
%
C = 15pF, f = 40MHz
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 1, V = 3.0V, Ta = 25°C,
L
DD
C = 15pF
t
PZL
1. The duty cycle characteristic is checked the sample chips of each production lot.
5V operation/Duty level: CMOS
V
= 4.5 to 5.5V, V = 0V
SS
DD
30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 70MHz: Ta = −15 to +75°C unless otherwise noted.
Rating
Parameter
Output rise time
Output fall time
Symbol
Condition
Unit
ns
min
–
typ
1.5
3.0
1.5
3.0
max
3.0
6.0
3.0
6.0
t
C = 15pF
L
r1
Measurement cct 6, load cct 1,
0.1V to 0.9V
DD
DD
t
C = 50pF
L
–
r2
t
C = 15pF
L
–
f1
Measurement cct 6, load cct 1,
0.9V to 0.1V
ns
DD
DD
t
C = 50pF
L
–
f2
C = 50pF
L
f = 50MHz
45
40
–
–
55
60
Measurement cct 6, load cct 1,
= 5.0V, Ta = 25°C
1
Output duty cycle
Duty
%
V
DD
C = 15pF
L
f = 70MHz
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 1, V = 5.0V, Ta = 25°C,
L
DD
C = 15pF
t
PZL
1. The duty cycle characteristic is checked the sample chips of each production lot.
SEIKO NPC CORPORATION —19
SM5010 series
5010FH× series
5V operation/Duty level: CMOS
V
= 4.5 to 5.5V, V = 0V
SS
DD
30 ≤ f ≤ 50MHz: Ta = −20 to +80°C, 50 < f ≤ 60MHz: Ta = −15 to +75°C unless otherwise noted.
Rating
Parameter
Output rise time
Output fall time
Symbol
Condition
Unit
ns
min
–
typ
4
max
8
t
C = 15pF
L
r1
Measurement cct 6, load cct 1,
0.1V to 0.9V
DD
DD
t
C = 50pF
L
–
11
4
21
8
r2
t
C = 15pF
L
–
f1
Measurement cct 6, load cct 1,
0.9V to 0.1V
ns
DD
DD
t
C = 50pF
L
–
11
–
21
55
60
100
100
f2
f = 50MHz
f = 60MHz
45
40
–
Measurement cct 6, load cct 1,
= 5.0V, Ta = 25°C, C = 15pF
1
Output duty cycle
Duty
%
V
DD
L
–
Output disable delay time
Output enable delay time
t
–
ns
ns
PLZ
Measurement cct 7, load cct 1, V = 5.0V, Ta = 25°C,
DD
C = 15pF
L
t
–
–
PZL
1. The duty cycle characteristic is checked the sample chips of each production lot.
5010HN× series
5V operation/Duty level: CMOS
V
= 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
SS
DD
Rating
typ
Parameter
Symbol
Condition
Unit
min
–
max
3.0
6.0
3.0
6.0
t
C = 15pF
L
1.5
r1
Measurement cct 6, load cct 1,
0.1V to 0.9V
Output rise time
ns
DD
DD
t
C = 50pF
L
–
3.0
r2
t
C = 15pF
L
–
1.5
f1
Measurement cct 6, load cct 1,
0.9V to 0.1V
Output fall time
ns
%
DD
DD
t
C = 50pF
L
–
3.0
f2
Measurement cct 6, load cct 1, V = 5.0V, Ta = 25°C,
1
DD
Output duty cycle
Duty
45
–
55
C = 50pF, f = 50MHz
L
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 1, V = 5.0V, Ta = 25°C,
L
DD
C = 15pF
t
PZL
1. The duty cycle characteristic is checked the sample chips of each production lot.
SEIKO NPC CORPORATION —20
SM5010 series
5010HK× series
5V operation/Duty level:TTL
V
= 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
SS
DD
Rating
typ
Parameter
Symbol
Condition
Unit
min
–
max
2.4
5.0
2.4
5.0
t
C = 15pF
L
1.2
r3
Measurement cct 6, load cct 2,
0.4V to 2.4V
Output rise time
ns
t
C = 50pF
L
–
2.0
r5
t
C = 15pF
L
–
1.2
f3
Measurement cct 6, load cct 2,
2.4V to 0.4V
Output fall time
ns
%
t
C = 50pF
L
–
2.0
f5
Measurement cct 6, load cct 2, V = 5.0V, Ta = 25°C,
1
DD
Output duty cycle
Duty
45
–
55
C = 15pF, f = 50MHz
L
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 2, V = 5.0V, Ta = 25°C,
L
DD
C = 15pF
t
PZL
1. The duty cycle characteristic is checked the sample chips of each production lot.
Current consumption and Output waveform with NPC’s standard crystal
for Fundamental oscillator
f [MHz]
30
R [Ω]
17.2
L [mH]
4.36
Ca [fF]
6.46
Cb [pF]
2.26
2.08
Cb
Ca
40
16.8
2.90
5.47
for 3rd overtone oscillator
f [MHz]
30
R [Ω]
18.62
20.53
22.17
15.37
25.42
L [mH]
16.24
11.34
7.40
Ca [fF]
1.733
1.396
1.370
1.836
1.254
Cb [pF]
5.337
3.989
4.105
5.191
5.170
L
R
40
50
60
3.83
70
4.18
SEIKO NPC CORPORATION —21
SM5010 series
MEASUREMENT CIRCUITS
Measurement cct 1
Measurement cct 4
VDD
VDD
C1
VDD
IPR
Signal
Generator
RUP1 =
RUP2 =
(VIL = 0V)
XT
Q
R2
R1
VSS
VSS
INHN
VDD VIH
IPR
(VIH = 0.7VDD)
V
VIH
VIL
VOH
0V
Q output
IPR
A
2.0V
3.5V
C1 : 0.001µF
R1 : 50Ω
, 10MHz sine wave input signal (3V operation)
, 10MHz sine wave input signal (5V operation)
P−P
P−P
R2 : 5010AN×, BN×, DN×, AK×, BK×
3V operation: 263Ω
5V operation: 245Ω
5010FN×, HN×, HK×
3V operation: 275Ω
5V operation: 245Ω
5010CL×
Measurement cct 5
VDD
XT
3V operation: 275Ω
5V operation: 250Ω
5010EA×, AH×, BH×
3V operation: 1050Ω
5010EA×, AH×, BH×, FH×
5V operation: 975Ω
VDD
Rf =
IRf
XTN
VSS
A
IRf
Measurement cct 2
Measurement cct 6
IZ, IOL
IZ
VDD
IST
A
Q
A
CG
VDD
XT
INHN VSS
VOL
Rfo
X'tal
Q
V
XTN
INHN VSS
CD
Measurement cct 3
Crystal oscillation
C , C : 22pF (5010DN×)
G
D
R : 3.0kΩ (5010H××)
fo
IDD
A
Measurement cct 7
VDD
C1
Signal
Generator
XT
Q
VDD
R1
Signal
Generator
VSS
XT
Q
VSS INHN
R1
2.0V
3.5V
, 30MHz sine wave input signal (3V operation)
, 30MHz sine wave input signal (5V operation)
P−P
P−P
C1 : 0.001µF
R1 : 50Ω
R1 : 50Ω
SEIKO NPC CORPORATION —22
SM5010 series
Load cct 1
Load cct 2
Q output
R
C
L
Q output
(Including probe
capacitance)
C
L
(Including probe
capacitance)
C = 15pF : DUTY , I , t , t
DD r1 f1
C = 15pF : DUTY, I , t , t
DD r3 f3
L
C = 30pF : t , t
L
C = 50pF : t , t
L
C = 50pF : t , t
r4 f4
L
r5 f5
R = 400Ω
L
r2 f2
Switching Time Measurement Waveform
Output duty level (CMOS)
0.9VDD
Q output
0.9VDD
0.1VDD
DUTY measurement
voltage (0.5VDD)
0.1VDD
TW
tr
tf
Output duty level (TTL)
DUTY measurement
voltage (1.4V)
2.4V
2.4V
0.4V
Q output
0.4V
TW
tr
tf
Output duty cycle (CMOS)
DUTY measurement
voltage (0.5VDD)
Q output
TW
DUTY= TW/ T 100 (%)
T
Output duty cycle (TTL)
DUTY measurement
voltage (1.4V)
Q output
TW
DUTY= TW/ T 100 (%)
T
SEIKO NPC CORPORATION —23
SM5010 series
Output Enable/Disable Delay
INHN
VIH
PZL
VIL
t
tPLZ
Q output
INHN input waveform tr = tf 10ns
Note (CL×/EA× series only): when the device is in standby, the oscillator stops. When standby is released, the
oscillator starts and stable oscillator output occurs after a short delay.
SEIKO NPC CORPORATION —24
SM5010 series
Please pay your attention to the following points at time of using the products shown in this document.
The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on
human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such
use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and
harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right
to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that
the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties.
Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document.
Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products,
and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or
modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in
compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested
appropriately take steps to obtain required permissions or approvals from appropriate government agencies.
SEIKO NPC CORPORATION
15-6, Nihombashi-kabutocho, Chuo-ku,
Tokyo 103-0026, Japan
Telephone: +81-3-6667-6601
Facsimile: +81-3-6667-6611
http://www.npc.co.jp/
Email: sales@npc.co.jp
NC0015DE 2006.04
SEIKO NPC CORPORATION —25
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