SM5022 [NPC]
Crystal Oscillator Module ICs; 晶体振荡器模块集成电路
| 型号： | SM5022 |
| 厂家： | 
NIPPON PRECISION CIRCUITS INC |
| 描述： | Crystal Oscillator Module ICs |
| 文件： | 总10页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM5022 series
Crystal Oscillator Module ICs
NIPPON PRECISION CIRCUITS INC.
OVERVIEW
The SM5022 series are crystal oscillator module ICs
fabricated in NPC’s Molybdenum-gate CMOS, that
incorporate high-frequency, low current consump-
tion oscillator and output buffer circuits. Highly
accurate thin-film feedback resistors and high-fre-
quency capacitors are built-in, eliminating the need
for external components to make a stable fundamen-
tal-harmonic oscillator.
FEATURES
■ Up to 30MHz operation
■ Output three-state function
■ Fundamental oscillation
■ 2.7 to 5.5 V supply voltage (A× series)
4.5 to 5.5 V supply voltage (B× series)
■ Capacitors CG, CD built-in
■ Inverter amplifier feedback resistor built-in
■ TTL input level
■ Oscillator frequency output (f , f /2, f /4, f /8
O
O
O
O
determined by internal connection)
■ 4 mA (V = 2.7 V) drive capability
■ 6-pin SOT (SM5022××H)
■ Chip form (CF5022××)
DD
8 mA (V = 4.5 V) drive capability
DD
SERIES CONFIGURATION
Re c omme nde d
Built-in
Supply voltag e
operating frequency
range (MHz)
capacitance
(pF)
gm
ratio
Rf
(k
Output
frequency
Output
level
Standby
output s tate
1
Vers ion
Ω
)
Chip
S OT
3V
5V
C
C
D
G
High
impedance
SM5022A1H 2.7 to 5.5
SM5022A2H 2.7 to 5.5
SM5022A3H 2.7 to 5.5
SM5022A4H 2.7 to 5.5
SM5022A5H 2.7 to 5.5
SM5022A7H 2.7 to 5.5
SM5022B1H 4.5 to 5.5
2.7 to 5.5
4 to 24
4 to 30
8
10
–
1
1
1
1
1
1
1
600
600
600
600
600
600
600
fo
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
TTL
High
impedance
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
4.5 to 5.5
4 to 24
4 to 30
4 to 30
4 to 30
4 to 30
×
4 to 30
4 to 30
4 to 30
4 to 30
4 to 30
4 to 30
–
8
–
8
8
8
fo
High
impedance
10
–
fo/2
fo/2
fo/4
fo/8
fo
High
impedance
High
impedance
10
10
10
High
impedance
High
impedance
1. Chip form devices have designation CF5022××
.
ORDERING INFORMATION
De vice
Packag e
6-pin SOT
Chip form
SM5022××
H
CF5022××–2
NIPPON PRECISION CIRCUITS—1
SM5022 s eries
PACKAGE DIMENSIONS
(UNIT : mm)
• 6-pin SOT
2.9 ± 0.2
1.9 ± 0.2
0.95
0.1
0.4 ± 0.1
M
0.12
NIPPON PRECISION CIRCUITS—2
SM5022 s eries
PAD LAYOUT
PINOUT
(Unit : µm)
(Top View)
Q
XT
(1000,800)
VDD
1
2
3
6
5
4
INH
XT
XT
VDD
Q
VSS
(0,0)
VSS
XT INH
Chip size: 1.00
Chip thickness: 220 ± 30 µm
Chip base: V level
× 0.80 mm
DD
PIN DESCRIPTION and PAD DIMENSIONS
Pad dimens ions [µm]
Nu mb e r
Na me
I/O
Des cription
X
Y
1
2
INH
XT
I
I
Output state control input. High impedance when LOW. Pull-up resistor built in
834
217
Crystal oscillator connection pins.
Amplifier input.
637
217
Crystal oscillator connected between XT and XT
3
4
5
VS S
Q
–
O
–
Ground
165
162
859
165
637
450
Output. Output frequency (f , f /2, f /4, f /8) determined by internal connection
O
O
O
O
VDD
Supply voltage
Crystal oscillator connection pins.
Crystal oscillator connected between XT and XT
6
XT
O
Amplifier output.
804
604
BLOCK DIAGRAM
VDD VSS
XT
CG
CD
Rf
XT
1/2
1/2
1/2
Q
INH
(INH : Low active)
NIPPON PRECISION CIRCUITS—3
SM5022 s eries
SPECIFICATIONS
Absolute Maximum Ratings
V
= 0 V
SS
Parameter
Symbol
Condition
Rating
Unit
V
Supply voltage range
Input voltage range
V
−
0.5 to 7.0
DD
V
−
0.5 to V
0.5 to V
+ 0.5
+ 0.5
V
IN
DD
DD
Output voltage range
Operating temperature range
V
−
V
OUT
T
−40 to 85
°
°
C
opr
Chip form
−
65 to 150
55 to 125
13
Storage temperature range
T
stg
C
6-pin SOT
−
Output current
I
mA
OUT
Power dissipation
P
6-pin SOT
250
m W
D
Recommended Operating Conditions
V
= 0 V, f ≤ 30MHz, C ≤ 15pF
L
SS
Rating
Parameter
Symbol
Condition
Unit
min
typ
–
ma x
Supply voltage
V
2.7
5.5
V
V
DD
Input voltage
V
V
–
V
DD
IN
S S
Operating temperature
T
−20
–
80
°C
OP R
Note: Recommended operating conditions will change in accordance with operating frequency, load capacitance, or power dissipation.
NIPPON PRECISION CIRCUITS—4
SM5022 s eries
Electrical Characteristics
3 V operation: A× series
V
= 2.7 to 3.6 V, V = 0 V, Ta = −20 to 80 °C unless otherwise noted.
SS
DD
Rating
Parameter
Symbol
Condition
Unit
min
2.1
–
typ
2.4
0.3
–
ma x
–
HIGH-level output voltage
LOW -level output voltage
V
Q: Measurement cct 1, V = 2.7 V, I = 4 mA
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 2.7 V, I = 4 mA
0.4
10
10
–
OL
DD
OL
Q: Measurement cct 2, V = 3.6 V, INH = LOW, V
= V
–
DD
OH
DD
Output leakage current
I
µA
Z
Q: Measurement cct 2, V = 3.6 V, INH = LOW, V = V
–
–
DD
OL
S S
HIGH-level input voltage
LOW -level input voltage
V
INH
INH
2.0
–
–
V
V
IH
V
–
0.5
IL
INH = open, Measurement cct 3, load cct 1, C = 15 pF,
L
Current consumption
I
–
4
7
mA
DD
30 MHz crystal oscillator
Measurement cct 4
Measurement cct 5
INH pull-up resistance
Feedback resistance
R
25
100
600
8
250
1000
8.56
k
k
Ω
Ω
UP
R
200
7.44
f
C
C
SM5022A1H, CF5022A1
SM5022A3H, CF5022A3
SM5022A5H, CF5022A5
SM5022A7H, CF5022A7
pF
pF
G
Design value, determined by the
internal wafer pattern
Built-in capacitance
9.3
10
10.7
D
5 V operation: A× series/ B× series
= 4.5 to 5.5 V, V = 0 V, Ta = −20 to 80 °C unless otherwise noted.
V
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
3.9
–
typ
4.2
0.3
–
ma x
–
HIGH-level output voltage
LOW -level output voltage
V
Q: Measurement cct 1, V = 4.5 V, I = 8 mA
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 4.5 V, I = 8 mA
0.4
10
10
–
OL
DD
OL
Q: Measurement cct 2, V = 5.5 V, INH = LOW, V
= V
–
DD
OH
DD
Output leakage current
I
µA
Z
Q: Measurement cct 2, V = 5.5 V, INH = LOW, V = V
–
–
DD
OL
S S
HIGH-level input voltage
LOW -level input voltage
V
INH
INH
2.0
–
–
V
V
IH
V
–
0.8
IL
INH = open, Measurement cct 3,
load cct 1, C = 15 pF,
30 MHz crystal oscillator
SM5022A
×
H, CF5022A
×
–
–
7
7
12
12
L
Current consumption
I
mA
DD
INH = open, Measurement cct 3,
load cct 2, C = 15 pF,
SM5022B
×
H, CF5022B×
L
30 MHz crystal oscillator
Measurement cct 4
Measurement cct 5
INH pull-up resistance
Feedback resistance
R
25
100
600
8
250
1000
8.56
k
k
Ω
Ω
UP
R
200
7.44
f
C
SM5022A1H, CF5022A1
SM5022A3H, CF5022A3
SM5022A5H, CF5022A5
SM5022A7H, CF5022A7
SM5022B1H, CF5022B1
pF
G
Design value, determined by the
internal wafer pattern
Built-in capacitance
C
9.3
10
10.7
pF
D
NIPPON PRECISION CIRCUITS—5
SM5022 s eries
Switching Characteristics
CMOS (A× series)
3 V operation
V
= 2.7 to 3.6 V, V = 0 V, Ta = −20 to 80 °C unless otherwise noted.
SS
DD
Rating
Parameter
Symbol
Condition
Unit
min
typ
5
ma x
10
0.2V to 0.8V
–
–
–
–
DD
DD
Measurement cct 6, load cct 1,
= 15 pF
Output rise time
t
ns
r1
C
L
0.1V to 0.9V
10
5
20
DD
DD
0.8V to 0.2V
10
DD
DD
Measurement cct 6, load cct 1,
= 15 pF
Output fall time
t
ns
%
f1
C
L
0.9V to 0.1V
10
20
DD
DD
Measurement cct 6, load cct 1,
Ta = 25 C, V = 3 V, C = 15 pF, f= 30MHz
1
Output duty cycle
Duty
45
–
55
°
DD
L
2
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 1, Ta = 25 °C, V = 3 V, C = 15 pF
DD L
2
t
PZL
1. Determined by the lot monitor.
2. Oscillator stop function is built-in. When INH goes LOW, normal output stops. When INH goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
5 V operation
V
= 4.5 to 5.5 V, V = 0 V, Ta = −20 to 80 °C unless otherwise noted.
SS
DD
Rating
typ
Parameter
Symbol
Condition
Unit
min
–
ma x
Output rise time
Output fall time
t
Measurement cct 6, load cct 1, 0.1V to 0.9V , C = 15 pF
3.5
7
7
ns
ns
r2
DD
DD
L
t
Measurement cct 6, load cct 1, 0.9V to 0.1V , C = 15 pF
–
3.5
f2
DD
DD
L
Measurement cct 6, load cct 1,
Ta = 25 C, V = 5 V, C = 15 pF, f = 30 MHz
1
Output duty cycle
Duty
45
–
55
%
°
DD
L
2
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 1, Ta = 25 °C, V = 5 V, C = 15 pF
DD L
2
t
PZL
1. Determined by the lot monitor.
2. Oscillator stop function is built-in. When INH goes LOW, normal output stops. When INH goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
NIPPON PRECISION CIRCUITS—6
SM5022 s eries
TTL (B× series)
5 V operation
V
= 4.5 to 5.5 V, V = 0 V, Ta = −20 to 80 °C unless otherwise noted.
SS
DD
Rating
typ
Parameter
Symbol
Condition
Unit
min
–
ma x
Output rise time
Output fall time
t
Measurement cct 6, load cct 2, 0.4V to 2.4V, C = 15 pF
2.5
7
7
ns
ns
r3
L
t
Measurement cct 6, load cct 2, 2.4V to 0.4V, C = 15 pF
L
–
2.5
f3
Measurement cct 6, load cct 2,
1
Output duty cycle
Duty
45
–
55
%
Ta = 25 °C, V = 5 V, C = 15 pF, f = 30 MHz
DD L
2
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 7, load cct 2, Ta = 25 °C, V = 5 V, C = 15 pF
DD L
2
t
PZL
1. Determined by the lot monitor.
2. Oscillator stop function is built-in. When INH goes LOW, normal output stops. When INH goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
Current consumption and Output waveform with NPC’s standard crystal
Cb
f (MHz)
30
R (Ω)
L (mH)
16.24
Ca (fF)
1.733
Cb (pF)
5.337
18.62
L
Ca
R
FUNCTIONAL DESCRIPTION
Standby Function
When INH goes LOW, the oscillator output on Q goes high impedance.
INH
HIGH (or open)
LOW
Q
Oscillator
Normal operation
Stopped
Any f , f /2, f /4, or f /8 output frequency
O
O
O
O
High impedance
NIPPON PRECISION CIRCUITS—7
SM5022 s eries
MEASUREMENT CIRCUITS
Measurement cct 1
Measurement cct 4
5.0V
VDD
VDD
VDD
IPR
RUP =
C1
Signal
XT
Q
Generator
VSS
INH
R1
R2
VSS
IPR
A
VOH
Q out monitor
0V
2.0V
, 10MHz sine wave input signal (3V operation)
, 10MHz sine wave input signal (5V operation)
P
−
P
P
3.5V
P
−
C1 : 0.001
R1 : 50
µF
Ω
R2 : 525
490
Ω
Ω
(3V operation)
(5V operation)
Measurement cct 5
Measurement cct 2
VDD
XT
XT
VDD
IRf
Rf =
IOL, IZ
IZ
VSS
VDD
A
Q
A
IRf
INH VSS
VOL
V
Measurement cct 6
CG
VDD
VSS
XT
Measurement cct 3
X'tal
Q
CD
XT
IDD
VDD
VSS
C1
Signal
Generator
XT
Q
C
,C : 10pF (5022A2, 5022A4)
D
G
R1
Measurement cct 7
VDD
2.0V
, 30MHz sine wave input signal (3V operation)
, 30MHz sine wave input signal (5V operation)
µF
P
−
P
P
Signal
Generator
R1
XT
Q
3.5V
P
−
C1 : 0.001
R1 : 50
Ω
VSS INH
R1 : 50
Ω
NIPPON PRECISION CIRCUITS—8
SM5022 s eries
Load cct 1
Load cct 2
Q output
R
CL
Q output
(Including probe capacity)
L
C
(Including proove
capacity)
C
=
15pF
C
R
=
=
15pF
800
L
L
Ω
Switching Time Measurement Waveform
Output duty level (CMOS)
0.9VDD
Q output
0.9VDD
0.1VDD
DUTY measuring
voltage (0.5VDD)
0.1VDD
TW
tr
tf
Output duty level (TTL)
DUTY measuring
voltage (1.4V)
2.4V
0.4V
2.4V
0.4V
Q output
TW
tr
tf
Output duty cycle (CMOS)
DUTY measuring
voltage (0.5VDD)
Q output
TW
DUTY= TW/ T 100 (%)
T
Output duty cycle (TTL)
DUTY measuring
voltage (1.4V)
Q output
TW
DUTY= TW/ T 100 (%)
T
NIPPON PRECISION CIRCUITS—9
SM5022 s eries
Output Enable/Disable Delay
VIH
INH
VIL
tPZL
tPLZ
Q output
INH inputwaveform tr =tf 10ns
NIPPON PRECISION CIRCUITS INC. reserves the right to make changes to the products described in this data sheet in order to
improve the design or performance and to supply the best possible products. Nippon Precision Circuits Inc. assumes no responsibility for
the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits
are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Nippon Precision
Circuits Inc. makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification.
The products described in this data sheet are not intended to use for the apparatus which influence human lives due to the failure or
malfunction of the products. Customers are requested to comply with applicable laws and regulations in effect now and hereinafter,
including compliance with export controls on the distribution or dissemination of the products. Customers shall not export, directly or
indirectly, any products without first obtaining required licenses and approvals from appropriate government agencies.
NIPPON PRECISION CIRCUITS INC.
4-3, Fukuzumi 2-chome
Koto-ku, Tokyo 135-8430, Japan
Telephone: 03-3642-6661
Facsimile: 03-3642-6698
NIPPON PRECISION CIRCUITS INC.
NP9906AE 1999.06
NIPPON PRECISION CIRCUITS—10
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