SM5073C3S [NPC]
VCXO ICs with Built-in Varicap; 用VCXO的集成电路内置于变容
| 型号： | SM5073C3S |
| 厂家： | 
NIPPON PRECISION CIRCUITS INC |
| 描述： | VCXO ICs with Built-in Varicap |
| 文件： | 总14页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM5073 series
VCXO ICs with Built-in Varicap
OVERVIEW
The SM5073 series are VCXO ICs with built-in varicap diode. They use a recently developed negative-resis-
tance switching oscillation circuit, at oscillation startup and during normal oscillation, for both good oscilla-
tion startup characteristics and wide pullrange. Furthermore, it employs a CMOS process varicap diode, and
also features all the necessary VCXO structure circuit components on a single chip, forming a VCXO with just
the connection of an external crystal.
FEATURES
PACKAGE DIMENSIONS
ꢀ 3.0 to 3.6V supply voltage range
ꢀ 10MHz to 60MHz operating frequency
(varies with version)
ꢀ Uses negative-resistance switching function
ꢀ Varicap diode built-in
(Unit: mm)
+
−
0.1
0.05
0.15
ꢀ Frequency divider built-in (varies with version: f ,
O
f /2, f /4, f /8, f /16, f /32)
O
O
O
O
O
ꢀ CMOS output level
ꢀ 50 10ꢀ output duty
ꢀ 6mA (min) output drive capability
0.695typ
5.2 0.3
ꢀ 15pF output load capacitance C
ꢀ Standby function
L
High impedance in standby mode
(oscillator continues running)
ꢀ Package: 8-pin SOP (SM5073××S)
1.27
0 to 10
0.10
APPLICATIONS
0.4 0.1
M
0.12
ꢀ VCXO modules
ꢀ Communications application
ꢀ Networking application
ꢀ Broadcasting application
SERIES LINEUP
Output frequency
2
Typicaloscillation
1
Version
2
2
2
2
frequency [MHz]
SM5073×1S
SM5073×2S
SM5073×3S
SM5073×4S
SM5073×5S
SM5073×6S
SM5073A×S
SM5073B×S
SM5073C×S
SM5073D×S
SM5073E×S
SM5073F×S
16
23
30
37
44
51
f
f /2
O
f /4
O
f /8
O
f /16
O
f /32
O
O
1. The typical oscillation frequency is the oscillation frequency criteria for use when selecting the device version. Note that the oscillation
characteristics and pullability vary with the crystal used and the mounting conditions. Even for the same frequency, the optimal version can vary
with crystal characteristics, so careful evaluation should be exercised when selecting the device version.
2. These versions are produced after receiving a purchase order. Please ask our Sales & Marketing section for further detail.
ORDERING INFORMATION
Device
Package
SM5073××S
8-pin SOP
SEIKO NPC CORPORATION —1
SM5073 series
PINOUT
(Top view)
1
2
3
4
8
7
6
5
XT
VDD
NC
Q
XTN
VC
INHN
VSS
PIN DESCRIPTION
Number
Name
I/O
Description
Function
Crystal connection pins.
Crystal is connected between XT and XTN.
1
XTN
O
Amplifier output pin
Oscillation frequency control
voltage input pin
2
VC
I
Positive polarity (frequency increases with increasing voltage)
Output state control voltage
input pin
3
4
5
INHN
VSS
Q
I
High-impedance output when LOW, pull-up resistor built-in
–
(−) supply pin
Output frequency determined by internal circuit to one of f , f /2,
O
O
O
Output pin
f /4, f /8, f /16, f /32
O
O
O
O
6
7
NC
–
–
No connection
(+) supply pin
VDD
Crystal connection pins.
Crystal is connected between XT and XTN.
8
XT
I
Amplifier input pin
SEIKO NPC CORPORATION —2
SM5073 series
BLOCK DIAGRAM
R
f
1/2 1/2 1/2 1/2 1/2
C
G
XT
Q
R
C
D
C
C
D
C
V
XTN
VC
VDD
VSS
R
B2
RB1
R
UP
INHN
Note. ESD of XT pin is inferior to other pins.
ESD of all pins excluding XT pin is equivalent to that of our other oscillator products.
VC pin has no protection circuit at V side. (See figure below.)
DD
VC
Internal circuit
SEIKO NPC CORPORATION —3
SM5073 series
ABSOLUTE MAXIMUM RATINGS
V
= 0V unless otherwise noted.
SS
Parameter
Symbol
Conditions
Rating
Unit
V
Supply voltage range
V
−0.5 to 7.0
DD
All input pins excluding VC pin
VC pin
−0.5 to V + 0.5
DD
V
Input voltage range
V
IN
1
−0.5 to V + 2.5
DD
V
Output voltage range
Operating temperature range
Storage temperature range
Output current
V
−0.5 to V + 0.5
DD
V
OUT
T
−40 to +85
−55 to +125
20
°C
°C
mA
mW
opr
T
STG
I
OUT
Power dissipation
P
500
D
1. It should not exceed + 7.0V.
RECOMMENDED OPERATING CONDITIONS
V
= 0V, f = 10MHz to 60MHz, C ≤ 15pF unless otherwise noted.
L
SS
Rating
Parameter
Symbol
Conditions
Unit
Min
Typ
–
Max
Operating supply voltage
Input voltage
V
3.0
3.6
V
V
DD
V
V
–
V
IN
SS
DD
Operating temperature
T
–40
–
+85
°C
OPR
SEIKO NPC CORPORATION —4
SM5073 series
ELECTRICAL CHARACTERISTICS
SM5073A×S
V
= 3.0 to 3.6V, V = 1.65V, V = 0V, Ta = –40 to +85°C, unless otherwise noted.
C SS
DD
Rating
Typ
2.75
0.2
–
Parameter
Symbol
Conditions
Unit
Min
2.5
–
Max
–
HIGH-level output voltage
LOW-level output voltage
V
Q: Measurement circuit 1, I = 6mA
OH
V
OH
V
Q: Measurement circuit 1, I = 6mA
OL
0.4
10
10
–
V
OL
V
V
= V
–
µA
µA
V
OH
OL
DD
Q: Measurement circuit 6,
INHN = LOW
Output leakage current
I
Z
= V
–
–
SS
HIGH-level input voltage
LOW-level input voltage
V
INHN
INHN
0.7V
–
IH
DD
V
–
–
–
0.3V
V
IL
DD
SM5073A1S
8
23
22.5
22
mA
mA
mA
mA
kΩ
kΩ
kΩ
kΩ
Measurement circuit 2, load
circuit 1, INHN = open,
C = 15pF,
SM5073A2S
–
7.5
7
Current consumption
I
DD
L
SM5073A3S
–
f = 16MHz
SM5073A4S to 6S
–
7
22
INHN pull-up resistance
R
Measurement circuit 3
50
150
0.67
100
100
300
0.96
200
180
540
1.25
360
UP
R
f
Design value. A monitor pattern on a wafer is
tested.
R
D
Built-in resistance
R
Measurement circuit 4
B1
Design value. A monitor pattern on a wafer is
tested.
R
50
100
180
kΩ
B2
V
V
= 0.3V
= 3.0V
11.0
2.4
14.4
4.0
30
17.8
5.6
pF
pF
pF
pF
pF
C
C
Design value. A monitor
pattern on a wafer is tested.
C
V
Built-in capacitance
C
25.5
34
34.5
46
G
Design value. A monitor pattern on a wafer is
tested.
C
40
D
C
8.5
10
11.5
C
SEIKO NPC CORPORATION —5
SM5073 series
SM5073B×S
V
= 3.0 to 3.6V, V = 1.65V, V = 0V, Ta = –40 to +85°C, unless otherwise noted.
C SS
DD
Rating
Typ
2.75
0.2
–
Parameter
Symbol
Conditions
Unit
Min
2.5
–
Max
–
HIGH-level output voltage
LOW-level output voltage
V
Q: Measurement circuit 1, I = 6mA
OH
V
OH
V
Q: Measurement circuit 1, I = 6mA
OL
0.4
10
10
–
V
OL
V
= V
–
µA
µA
V
OH
OL
DD
Q: Measurement circuit 6,
INHN = LOW
Output leakage current
I
Z
V
= V
–
–
SS
HIGH-level input voltage
LOW-level input voltage
V
INHN
INHN
0.7V
–
IH
DD
V
–
–
–
0.3V
V
IL
DD
SM5073B1S
9
25
mA
mA
mA
mA
kΩ
kΩ
kΩ
kΩ
Measurement circuit 2, load
circuit 1, INHN = open,
C = 15pF,
SM5073B2S
–
8
24
Current consumption
I
DD
L
SM5073B3S
–
7.5
7.5
100
300
0.72
200
23.5
23.5
180
540
0.94
360
f = 23MHz
SM5073B4S to 6S
–
INHN pull-up resistance
R
Measurement circuit 3
50
150
0.50
100
UP
R
f
Design value. A monitor pattern on a wafer is
tested.
R
D
Built-in resistance
R
Measurement circuit 4
B1
Design value. A monitor pattern on a wafer is
tested.
R
50
100
180
kΩ
B2
V
V
= 0.3V
= 3.0V
11.0
2.3
14.6
4.0
30
18.2
5.7
pF
pF
pF
pF
pF
C
C
Design value. A monitor
pattern on a wafer is tested.
C
V
Built-in capacitance
C
25.5
34
34.5
46
G
Design value. A monitor pattern on a wafer is
tested.
C
40
D
C
12.7
15
17.3
C
SEIKO NPC CORPORATION —6
SM5073 series
SM5073C×S
V
= 3.0 to 3.6V, V = 1.65V, V = 0V, Ta = –40 to +85°C, unless otherwise noted.
C SS
DD
Rating
Typ
2.75
0.2
–
Parameter
Symbol
Conditions
Unit
Min
2.5
–
Max
–
HIGH-level output voltage
LOW-level output voltage
V
Q: Measurement circuit 1, I = 6mA
OH
V
OH
V
Q: Measurement circuit 1, I = 6mA
OL
0.4
10
10
–
V
OL
V
= V
–
µA
µA
V
OH
OL
DD
Q: Measurement circuit 6,
INHN = LOW
Output leakage current
I
Z
V
= V
–
–
SS
HIGH-level input voltage
LOW-level input voltage
V
INHN
INHN
0.7V
–
IH
DD
V
–
–
–
0.3V
V
IL
DD
SM5073C1S
10
28
27
mA
mA
mA
mA
kΩ
kΩ
kΩ
kΩ
Measurement circuit 2, load
circuit 1, INHN = open,
C = 15pF,
SM5073C2S
–
9
Current consumption
I
DD
L
SM5073C3S
–
8.5
8
26.5
26
f = 30MHz
SM5073C4S to 6S
–
INHN pull-up resistance
R
Measurement circuit 3
50
150
0.50
100
100
300
0.72
200
180
540
0.94
360
UP
R
f
Design value. A monitor pattern on a wafer is
tested.
R
D
Built-in resistance
R
Measurement circuit 4
B1
Design value. A monitor pattern on a wafer is
tested.
R
50
100
180
kΩ
B2
V
V
= 0.3V
= 3.0V
11.0
2.3
14.6
4.0
30
18.2
5.7
pF
pF
pF
pF
pF
C
C
Design value. A monitor
pattern on a wafer is tested.
C
V
Built-in capacitance
C
25.5
25.5
29.7
34.5
34.5
40.3
G
Design value. A monitor pattern on a wafer is
tested.
C
30
D
C
35
C
SEIKO NPC CORPORATION —7
SM5073 series
SM5073D×S
V
= 3.0 to 3.6V, V = 1.65V, V = 0V, Ta = –40 to +85°C, unless otherwise noted.
C SS
DD
Rating
Typ
2.75
0.2
–
Parameter
Symbol
Conditions
Unit
Min
2.5
–
Max
–
HIGH-level output voltage
LOW-level output voltage
V
Q: Measurement circuit 1, I = 6mA
OH
V
OH
V
Q: Measurement circuit 1, I = 6mA
OL
0.4
10
10
–
V
OL
V
= V
–
µA
µA
V
OH
OL
DD
Q: Measurement circuit 6,
INHN = LOW
Output leakage current
I
Z
V
= V
–
–
SS
HIGH-level input voltage
LOW-level input voltage
V
INHN
INHN
0.7V
–
IH
DD
V
–
–
–
0.3V
V
IL
DD
SM5073D1S
11
30
mA
mA
mA
mA
kΩ
kΩ
kΩ
kΩ
Measurement circuit 2, load
circuit 1, INHN = open,
C = 15pF,
SM5073D2S
–
9.5
9
28.5
28
Current consumption
I
DD
L
SM5073D3S
–
f = 37MHz
SM5073D4S to 6S
–
8.5
100
300
0.36
200
27.5
180
540
0.47
360
INHN pull-up resistance
R
Measurement circuit 3
50
150
0.25
100
UP
R
f
Design value. A monitor pattern on a wafer is
tested.
R
D
Built-in resistance
R
Measurement circuit 4
B1
Design value. A monitor pattern on a wafer is
tested.
R
50
100
180
kΩ
B2
V
V
= 0.3V
= 3.0V
11.0
2.3
14.6
4.0
30
18.2
5.7
pF
pF
pF
pF
pF
C
C
Design value. A monitor
pattern on a wafer is tested.
C
V
Built-in capacitance
C
25.5
25.5
34
34.5
34.5
46
G
Design value. A monitor pattern on a wafer is
tested.
C
30
D
C
40
C
SEIKO NPC CORPORATION —8
SM5073 series
SM5073E×S
V
= 3.0 to 3.6V, V = 1.65V, V = 0V, Ta = –40 to +85°C, unless otherwise noted.
C SS
DD
Rating
Typ
2.75
0.2
–
Parameter
Symbol
Conditions
Unit
Min
2.5
–
Max
–
HIGH-level output voltage
LOW-level output voltage
V
Q: Measurement circuit 1, I = 6mA
OH
V
OH
V
Q: Measurement circuit 1, I = 6mA
OL
0.4
10
10
–
V
OL
V
= V
–
µA
µA
V
OH
OL
DD
Q: Measurement circuit 6,
INHN = LOW
Output leakage current
I
Z
V
= V
–
–
SS
HIGH-level input voltage
LOW-level input voltage
V
INHN
INHN
0.7V
–
IH
DD
V
–
–
–
0.3V
V
IL
DD
SM5073E1S
12
32
mA
mA
mA
mA
kΩ
kΩ
kΩ
kΩ
Measurement circuit 2, load
circuit 1, INHN = open,
C = 15pF,
SM5073E2S
–
10.5
9.5
9
30.5
29.5
29
Current consumption
I
DD
L
SM5073E3S
–
f = 44MHz
SM5073E4S to 6S
–
INHN pull-up resistance
R
Measurement circuit 3
50
150
0.25
100
100
300
0.36
200
180
540
0.47
360
UP
R
f
Design value. A monitor pattern on a wafer is
tested.
R
D
Built-in resistance
R
Measurement circuit 4
B1
Design value. A monitor pattern on a wafer is
tested.
R
50
100
180
kΩ
B2
V
V
= 0.3V
= 3.0V
11.0
2.3
14.6
4.0
25
18.2
5.7
pF
pF
pF
pF
pF
C
C
Design value. A monitor
pattern on a wafer is tested.
C
V
Built-in capacitance
C
21.2
21.2
42.5
28.8
28.8
57.5
G
Design value. A monitor pattern on a wafer is
tested.
C
25
D
C
50
C
SEIKO NPC CORPORATION —9
SM5073 series
SM5073F×S
V
= 3.0 to 3.6V, V = 1.65V, V = 0V, Ta = –40 to +85°C, unless otherwise noted.
C SS
DD
Rating
Typ
2.75
0.2
–
Parameter
Symbol
Conditions
Unit
Min
2.5
–
Max
–
HIGH-level output voltage
LOW-level output voltage
V
Q: Measurement circuit 1, I = 6mA
OH
V
OH
V
Q: Measurement circuit 1, I = 6mA
OL
0.4
10
10
–
V
OL
V
= V
–
µA
µA
V
OH
OL
DD
Q: Measurement circuit 6,
INHN = LOW
Output leakage current
I
Z
V
= V
–
–
SS
HIGH-level input voltage
LOW-level input voltage
V
INHN
INHN
0.7V
–
IH
DD
V
–
–
–
0.3V
V
IL
DD
SM5073F1S
13
35
33
mA
mA
mA
mA
kΩ
kΩ
kΩ
kΩ
Measurement circuit 2, load
circuit 1, INHN = open,
C = 15pF,
SM5073F2S
–
11
Current consumption
I
DD
L
SM5073F3S
–
10
32
f = 51MHz
SM5073F4S to 6S
–
9.5
100
300
0.36
200
31.5
180
540
0.47
360
INHN pull-up resistance
R
Measurement circuit 3
50
150
0.25
100
UP
R
f
Design value. A monitor pattern on a wafer is
tested.
R
D
Built-in resistance
R
Measurement circuit 4
B1
Design value. A monitor pattern on a wafer is
tested.
R
50
100
180
kΩ
B2
V
V
= 0.3V
= 3.0V
9.5
2.0
17
12.5
3.5
20
15.5
5.0
23
pF
pF
pF
pF
pF
C
C
Design value. A monitor
pattern on a wafer is tested.
C
V
Built-in capacitance
C
G
Design value. A monitor pattern on a wafer is
tested.
C
17
20
23
D
C
42.5
50
57.5
C
SEIKO NPC CORPORATION —10
SM5073 series
SWITCHING CHARACTERISTICS
V
= 3.0 to 3.6V, V = 1.65V, V = 0V, Ta = –40 to +85°C, unless otherwise noted
C SS
DD
1
Rating
Typ
Parameter
Symbol
Conditions
Unit
Min
Max
Measurement circuit 2, load circuit 1,
0.1V → 0.9V , C = 15pF
Output rise time
Output fall time
Output duty cycle
t
–
2.5
2.5
50
6
ns
ns
%
r1
DD
DD
L
Measurement circuit 2, load circuit 1,
0.9V → 0.1V , C = 15pF
t
–
6
f1
DD
DD
L
Measurement circuit 2, load circuit 1,
= 3.3V, Ta = 25°C, C = 15pF
Duty
40
60
V
DD
L
Output disable delay time
Output enable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement circuit 5, load circuit 1,
= 3.3V, Ta = 25°C, C ≤ 15pF
V
DD
L
t
PZL
1. The switching characteristics apply for normal output waveforms. Note that, depending on the matching of the SM5073 series version and crystal,
normal waveform output may not be continuous.
Current consumption and Output waveform with NPC’s standard crystal
C0
f [MHz]
30
R1 [Ω]
L1 [mH]
2.25
C1 [fF]
12.5
C0 [pF]
3.11
7.06
L1
C1
R1
FUNCTIONAL DESCRIPTION
Standby Function
When INHN goes LOW, the Q output pin becomes high impedance.
INHN
HIGH (or open)
LOW
Q
Oscillator
Operating
Operating
Any f , f /2, f /4, f /8, f /16, or f /32
O
O
O
O
O
O
High impedance
SEIKO NPC CORPORATION —11
SM5073 series
MEASUREMENT CIRCUITS
Measurement Circuit 1
Measurement Circuit 4
When
measuring VOL
R3
R2
VDD
IRB1
A
VDD
VSS
C1
Signal
XT
VC
Q
VC
Generator
VDD
IRB1
R1
RB1 =
VSS
When
measuring VOH
XTN
VDD
VOH
0V
Q output
VDD
VOL
0V
Q output
XT input signal: 2.5Vp-p, 10MHz, sine wave
C1 = 0.001µF, R1 = 50Ω, R2 = 417Ω, R3 = 434Ω, V = 1.65V
C
Measurement Circuit 2
Measurement Circuit 5
A
VDD
C1
VDD
VSS
Signal
Generator
XT
INHN
Q
XT
INHN
X'tal
XTN
VC
VC
Q
R1
VSS
V
= 1.65V, INHN = open, crystal oscillation
XT input signal: 2.5Vp-p, 10MHz, sine wave
C1 = 0.001µF, R1 = 50Ω, V = 1.65V
C
C
Measurement Circuit 3
Measurement Circuit 6
VDD
IRUP
RUP =
VDD
VDD
INHN
INHN
VC
VC
Q
A
IRUP
A
VSS
VSS
V
= 1.65V
V = 1.65V
C
C
SEIKO NPC CORPORATION —12
SM5073 series
Load Circuit 1
Q output
CL
(Including probe capacitance)
Switching Time Measurement Waveform
Output duty level, t , t
r
f
0.9VDD
0.1VDD
0.9VDD
0.1VDD
DUTY measurement
voltage (0.5VDD)
Q output
TW
tr1
tf1
Output duty cycle
DUTY measurement
voltage (0.5VDD)
Q output
TW
DUTY= TW/ T 100 (%)
T
Output Enable/Disable Delay Times
VIH
INHN
VIL
tPZL
tPLZ
Q output
INHN input waveform tr = tf 10ns
SEIKO NPC CORPORATION —13
SM5073 series
Please pay your attention to the following points at time of using the products shown in this document.
The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on
human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such
use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and
harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right
to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that
the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties.
Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document.
Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products,
and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or
modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in
compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested
appropriately take steps to obtain required permissions or approvals from appropriate government agencies.
SEIKO NPC CORPORATION
15-6, Nihombashi-kabutocho, Chuo-ku,
Tokyo 103-0026, Japan
Telephone: +81-3-6667-6601
Facsimile: +81-3-6667-6611
http://www.npc.co.jp/
Email: sales@npc.co.jp
NC0213BE 2006.04
SEIKO NPC CORPORATION —14
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