WF5075BN-4 [NPC]
VCXO Module IC with Built-in Varicap; VCXO模块IC ，内置的变容
| 型号： | WF5075BN-4 |
| 厂家： | 
NIPPON PRECISION CIRCUITS INC |
| 描述： | VCXO Module IC with Built-in Varicap |
| 文件： | 总14页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
5075 series
VCXO Module IC with Built-in Varicap
OVERVIEW
The 5075 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using minia-
ture crystal units for which a wide pulling range is difficult to provide. They employ a recently developed vari-
cap diode fabrication process that provides a wide frequency pulling range and good linearity without any
external components. Also, they employ a regulated voltage drive oscillator circuit that significantly reduces
current consumption, crystal current, and oscillation characteristics supply voltage dependency. The 5075
series are ideal for miniature, wide pulling range, low power consumption, VCXO modules.
FEATURES
ꢀ VCXO with recently developed varicap diode
built-in
ꢀ Low current consumption: 1.0mA
(B1 version, f = 27MHz, no load, V = 3.3V)
DD
ꢀ New fabrication process that significantly reduces
parasitic capacitance and provides wide pulling
range even when using miniature crystal units
ꢀ Regulated voltage drive oscillator circuit for
reduced power consumption, crystal drive current,
and oscillation characteristics voltage dependency
ꢀ Wide frequency pulling range
ꢀ Frequency divider built-in
• Selectable by version: f , f /2, f /4, f /8, f /16
O
O
O
O
O
• Frequency divider output for 1.3MHz (min) low
frequency output
ꢀ VC pin input resistance: 10MΩ (min)
ꢀ CMOS output
ꢀ Two types of pad layout selectable by mounting
method
•
190ppm (B1 version, f = 27MHz)
• A× version: for Flip Chip Bonding
• B× version: for Wire Bonding
ꢀ Package: Wafer form (WF5075××)
Chip form (CF5075××)
(Crystal: γ = 300, C0 = 1.5pF)
ꢀ Operating supply voltage range: 2.25V to 3.63V
ꢀ Oscillation frequency range (for fundamental oscil-
lation): 20MHz to 55MHz (varies with version)
APPLICATIONS
ꢀ 2.5 × 2.0mm, 3.2 × 2.5mm size miniature VCXO modules for digital mobile TV tuner, digital TV (PDP,
LCD), PND (Personal Navigation Device), etc.
ORDERING INFORMATION
Device
Package
Wafer form
Chip form
WF5075××−4
CF5075××−4
SEIKO NPC CORPORATION —1
5075 series
SERIES CONFIGURATION
*2
Operating
supply voltage
range [V]
Recommended
operating frequency
Output frequency and version name
PAD layout
Flip Chip Bonding
Wire Bonding
*1
f /4 output
O
f /8 output
O
f /16 output
O
f
output
f /2 output
O
range [MHz]
O
20 to 40
40 to 55
20 to 40
40 to 55
(5075A1)
(5075AJ)
5075B1
5075BJ
(5075A2)
(5075AK)
(5075B2)
(5075BK)
(5075A3)
(5075AL)
(5075B3)
(5075BL)
(5075A4)
(5075AM)
(5075B4)
(5075BM)
(5075A5)
(5075AN)
(5075B5)
(5075BN)
2.25 to 3.63
*1. The recommended operating frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscil-
lation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so
the oscillation characteristics of components must be carefully evaluated.
*2. Versions in parentheses ( ) are under development.
VERSION NAME
Device
Package
Version name
WF5075××–4
Wafer form
WF5075
−4
Form WF: Wafer form
CF: Chip (Die) form
Oscillation frequency range, frequency divider function
Pad layout type A: for Flip Chip Bonding
B: for Wire Bonding
CF5075××–4
Chip form
SEIKO NPC CORPORATION —2
5075 series
PAD LAYOUT
(Unit: µm)
ꢀ 5075A× (for Flip Chip Bonding)
ꢀ 5075B× (for Wire Bonding)
(420, 345)
Q
(420, 345)
VSS
VSS
Q
5
5
6
4
3
4
3
Y
Y
VC
VDD
VDD
6
VC
(0,0)
(0,0)
1
2
1
2
(−420, −345)
(−420, −345)
XT
XTN
XTN
XT
X
X
Chip size: 0.84 × 0.69mm
Chip thickness: 130µm 15µm
Chip size: 0.84 × 0.69mm
Chip thickness: 130µm 15µm
PAD size: 90µm × 90µm
Chip base: V level
SS
PAD size: 90µm × 90µm
Chip base: V level
SS
PAD DIMENSIONS PIN DESCRIPTION
Pad dimensions [µm]
Pad No.
Pad No.
Pin
I/O
Description
X
Y
5075A× 5075B×
1
2
3
4
5
–189
189
315
315
–315
–240
–240
–21
225
225
1
2
3
4
5
2
1
6
5
4
XT
XTN
VDD
Q
I
Crystal connection pin (amplifier input)
O
–
Crystal connection pin (amplifier output)
(+) supply pin
O
–
Clock output pin
VSS
(−) supply pin
Oscillation frequency control voltage input pin (positive polarity)
(frequency increases with increasing voltage)
6
–315
–21
6
3
VC
I
BLOCK DIAGRAM
Voltage
Regulator
Rf
VDD
CIN
Oscillation
Detector
XT
RD
COUT
Level Shifter
XTN
RVC2
CMOS ouput
Buffer
1
N*1
Q
RVC1
VC
CVC1
CVC2
VSS
*1. N = 1, 2, 4, 8, 16
SEIKO NPC CORPORATION —3
5075 series
ABSOLUTE MAXIMUM RATINGS
V
= 0V
SS
Parameter
Symbol
Conditions
Between VDD and VSS
Rating
Unit
V
Supply voltage range
Input voltage range
Output voltage range
Storage temperature range
Output current
V
−0.5 to 7.0
DD
V
Input pins
−0.5 to V + 0.5
DD
V
IN
V
Output pins
Wafer form, chip form
Q pin
−0.5 to V + 0.5
DD
V
OUT
T
−65 to +150
°C
mA
STG
I
20
OUT
RECOMMENDED OPERATING CONDITIONS
V
= 0V
SS
Rating
Parameter
Symbol
Conditions
Unit
Min
Typ
–
Max
Operating supply voltage
Input voltage
V
C
≤ 15pF
LOUT
2.25
3.63
V
DD
V
Input pins
V
–
V
V
IN
SS
DD
Operating temperature
T
–40
20
–
+85
40
°C
OPR
5075×1 to 5075×5
5075×J to 5075×N
–
MHz
MHz
MHz
MHz
*1
Oscillation frequency
f
O
40
–
55
5075×1 to 5075×5
5075×J to 5075×N
1.25
2.5
–
40
Output frequency
f
C
≤ 15pF
LOUT
OUT
–
55
*1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency
range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation
characteristics of components must be carefully evaluated.
SEIKO NPC CORPORATION —4
5075 series
ELECTRICAL CHARACTERISTICS
5075×1 to 5075×5
V
= 2.25 to 3.63V, V = 0.5V , V = 0V, Ta = –40 to +85°C unless otherwise noted.
DD
C
DD SS
Rating
Typ
0.7
1.0
0.6
0.8
0.5
0.7
0.5
0.6
0.4
0.6
–
Parameter
Symbol
Conditions
Unit
Min
–
Max
1.4
2.0
1.2
1.6
1.0
1.4
1.0
1.2
0.8
1.2
–
V
V
V
V
V
V
V
V
V
V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
5075×1 (f ), Measurement circuit 1,
O
no load, f = 27MHz, f
= 27MHz
O
OUT
–
–
5075×2 (f /2), Measurement circuit 1,
O
no load, f = 27MHz, f
= 13.5MHz
O
OUT
–
–
5075×3 (f /4), Measurement circuit 1,
O
no load, f = 27MHz, f
Current consumption
I
DD
= 6.75MHz
O
OUT
–
–
5075×4 (f /8), Measurement circuit 1,
O
no load, f = 27MHz, f
= 3.38MHz
O
OUT
–
–
5075×5 (f /16), Measurement circuit 1,
O
no load, f = 27MHz, f
= 1.69MHz
O
OUT
–
HIGH-level output voltage
LOW-level output voltage
V
Q pin, Measurement circuit 2, I = –2.8mA
OH
V
– 0.4
DD
OH
V
Q pin, Measurement circuit 2, I = 2.8mA
OL
–
210
210
–
–
0.4
840
840
–
V
OL
R
420
420
5.6
3.1
1.5
8.4
4.7
2.3
–
kΩ
kΩ
pF
VC1
Oscillator block built-in
resistance
Measurement circuit 3
R
VC2
V
= 0.3V
= 1.65V
= 3.0V
= 0.3V
= 1.65V
= 3.0V
C
C
V
V
V
V
V
–
–
pF
VC1
C
C
C
C
C
Design value (a monitor pattern on a
wafer is tested), Excluding parasitic
capacitance.
–
–
pF
Oscillator block built-in
capacitance
–
–
pF
C
–
–
pF
VC2
–
–
pF
VC input resistance
VC input impedance
R
Measurement circuit 4, Ta = 25°C
10
–
MΩ
VIN
Measurement circuit 5, V = 0V, f = 10kHz, Ta = 25°C
C
(a monitor pattern on a wafer is tested)
Z
–
–
–
450
37
–
–
–
kΩ
pF
VIN
Measurement circuit 5, V = 0V, f = 10kHz, Ta = 25°C
C
(a monitor pattern on a wafer is tested)
VC input capacitance
Modulation
C
VIN
Measurement circuit 6, –3dB frequency, V = 3.3V,
DD
V = 3.3Vp-p, Ta = 25°C, f = 27MHz
C O
fm
25
kHz
*1
characteristics
*1. The modulation characteristics may vary with the crystal used.
SEIKO NPC CORPORATION —5
5075 series
5075×J to 5075×N
V
= 2.25 to 3.63V, V = 0.5V , V = 0V, Ta = –40 to +85°C unless otherwise noted.
DD
C
DD SS
Rating
Typ
1.2
1.6
0.9
1.3
0.8
1.0
0.7
0.9
0.7
0.9
–
Parameter
Symbol
Conditions
Unit
Min
–
Max
2.4
3.2
1.8
2.6
1.6
2.0
1.4
1.8
1.4
1.8
–
V
V
V
V
V
V
V
V
V
V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
5075×J (f ), Measurement circuit 1,
O
no load, f = 48MHz, f
= 48MHz
O
OUT
–
–
5075×K (f /2), Measurement circuit 1,
O
no load, f = 48MHz, f
= 24MHz
O
OUT
–
–
5075×L (f /4), Measurement circuit 1,
O
no load, f = 48MHz, f
Current consumption
I
DD
= 12MHz
O
OUT
–
–
5075×M (f /8), Measurement circuit 1,
O
no load, f = 48MHz, f
= 6MHz
O
OUT
–
–
5075×N (f /16), Measurement circuit 1,
O
no load, f = 48MHz, f
= 3MHz
O
OUT
–
HIGH-level output voltage
LOW-level output voltage
V
Q pin, Measurement circuit 2, I = –2.8mA
OH
V
– 0.4
DD
OH
V
Q pin, Measurement circuit 2, I = 2.8mA
OL
–
210
210
–
–
0.4
840
840
–
V
OL
R
420
420
5.6
3.1
1.5
8.4
4.7
2.3
–
kΩ
kΩ
pF
VC1
Oscillator block built-in
resistance
Measurement circuit 3
R
VC2
V
= 0.3V
= 1.65V
= 3.0V
= 0.3V
= 1.65V
= 3.0V
C
C
C
C
C
C
C
V
V
V
V
V
–
–
pF
VC1
Design value (a monitor pattern on a
wafer is tested), Excluding parasitic
capacitance.
–
–
pF
Oscillator block built-in
capacitance
–
–
pF
C
–
–
pF
VC2
–
–
pF
VC input resistance
VC input impedance
R
Measurement circuit 4, Ta = 25°C
10
–
MΩ
VIN
Measurement circuit 5, V = 0V, f = 10kHz, Ta = 25°C
C
(a monitor pattern on a wafer is tested)
Z
–
–
–
450
37
–
–
–
kΩ
pF
VIN
Measurement circuit 5, V = 0V, f = 10kHz, Ta = 25°C
C
(a monitor pattern on a wafer is tested)
VC input capacitance
Modulation
C
VIN
Measurement circuit 6, –3dB frequency, V = 3.3V,
DD
V = 3.3Vp-p, Ta = 25°C, f = 48MHz
C O
fm
23
kHz
*1
characteristics
*1. The modulation characteristics may vary with the crystal used.
SEIKO NPC CORPORATION —6
5075 series
SWITCHING CHARACTERISTICS
V
= 2.25 to 3.63V, V = 0.5V , V = 0V, Ta = –40 to +85°C unless otherwise noted.
C DD SS
DD
Rating
Typ
Parameter
Symbol
Conditions
Unit
Min
Max
Measurement circuit 7, 0.2V → 0.8V
LOUT
,
DD
DD
Output rise time
Output fall time
Output duty cycle
t
–
2.1
2.1
50
4.0
ns
ns
%
r
C
= 15pF
Measurement circuit 7, 0.8V → 0.2V
,
DD
DD
t
–
4.0
55
f
C
= 15pF
LOUT
Measurement circuit 7, Ta = 25°C,
= 15pF, V = 3.3V
Duty
45
C
LOUT
DD
Switching Time Measurement Waveform
Q
0.8VDD
0.8VDD
DUTY measurement
voltage (0.5VDD
TW
)
0.2VDD
0.2VDD
DUTY= T / T 100 (%)
W
T
tr
tf
SEIKO NPC CORPORATION —7
5075 series
MEASUREMENT CIRCUITS
Measurement Circuit 1
Measurement Circuit 4
Measurement parameter: I
Measurement parameter: R
DD
VIN
I
DD
A
VDD
XT
IVIN
A
VDD
VDD
IVIN
XT
Crystal
RVIN =
XTN
VC
XTN
VC
Q
VSS
0.1µF
VSS
Measurement Circuit 5
Measurement parameter: C , Z
Measurement Circuit 2
VIN VIN
Measurement parameter: V , V
OH OL
VDD
XT
VDD
0.001µF
50Ω
Signal
Generator
XTN
VC
Q
XT
0.1µF
50Ω
Impedance
Analyzer
(HP 4194A)
XTN
VC
Q
VSS
V
OH
OL
0.1µF
VS
V
V
VSS
VC input signal: 100Hz to 10kHz, 0.1Vp-p
∆V
VOH
VS
VS
Measurement Circuit 6
Measurement parameter: fm
VOL
∆V
V
50 × I
adjusted such that ∆V =
OH
V adjusted such that ∆V =
S
50 × I .
OL
S
.
VDD
VSS
XT
0.1µF
Crystal
XT input signal: 1Vp-p, sine wave
XTN
VC
Q
Modulation
signal
R1
R2
Gain-phase
Analyzer
C1
Measurement Circuit 3
Measurement parameter: R , R
(HP 4194A)
CLOUT
= 15pF
VC1 VC2
Demodulation
signal
Modulaiton
Analyzer
(HP 8901B)
IXT
IXTN
A
A
VDD
VSS
VDD
VSS
C1 = 33µF, R1 = R2 = 1MΩ
VC modulation signal: 100Hz to 100kHz, 0 to V p-p
XT
XT
DD
XTN
VC
XTN
VC
Measurement Circuit 7
Measurement parameter: Duty, t , t
r
f
VDD
VDD
RVC1 =
RVC2 =
VDD
VSS
IXT
IXTN
XT
Crystal
XTN
VC
Q
C
LOUT = 15pF
0.1µF
(Including probe
capacitance)
SEIKO NPC CORPORATION —8
5075 series
FUNCTIONAL DESCRIPTION
Oscillation Start-up Detector Function
The devices also feature an oscillation start-up detector circuit. This circuit functions to disable the outputs
until the oscillation starts. This prevents unstable oscillator output at oscillator start-up when power is applied.
TYPICAL PERFORMANCE (5075B1)
The following characteristics measured using the crystal below. Note that the characteristics will vary with the
crystal used.
ꢀ Crystal used for measurement
ꢀ Crystal parameters
Parameter
C0 [pF]
f
= 27MHz
1.5
O
L1
C1
C0
R1
γ (= C0/C1)
300
Frequency Pulling Range
250
200
150
250
200
150
100
50
100
50
0
0
−50
−50
−100
−150
−200
−100
−150
−200
−250
−250
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
0.00 0.30 0.60 0.90 1.20 1.501.651.80 2.10 2.40 2.70 3.00 3.30
VC [V]
VC [V]
V
= 2.5V, f
= 27MHz, Ta = R.T.
V
= 3.3V, f
= 27MHz, Ta = R.T.
OUT
DD
OUT
DD
Measurement circuit
Pulling Sensitivity
250
VDD
200
XT
Crystal
VDD = 2.5V
150
XTN
Q
VC
100
50
0
CLOUT = 15pF
(Including probe
capacitance)
0.1µF
VSS
VDD = 3.3V
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3
VC [V]
V
= 2.5V, 3.3V, f
= 27MHz, Ta = R.T.
DD
OUT
SEIKO NPC CORPORATION —9
5075 series
Measurement circuit
Current Consumption
5
4
IDD
A
VDD
XT
Crystal
3
VC = 0V
VC = 0.5VDD
VC = VDD
CLOUT = 15pF
XTN
VC
Q
2
1
0.1µF
VC = 0V
VSS
VC = 0.5VDD
VC = VDD
CLOUT = No load
0
2.5
2.8 3.0
VDD [V]
3.3
3.6
f
= 27MHz, Ta = R.T.
OUT
Frequency Stability by Supply Voltage Change
3.0
2.0
3.0
2.0
1.0
1.0
VC = 0V
VC = 2.5V
VC = 3.3V
VC = 0V
VC = 1.25V
0.0
0.0
VC = 1.65V
−1.0
−1.0
−2.0
−3.0
−2.0
−3.0
2.0
2.5
3.0
3.5
4.0
2.0
2.5
3.0
VDD [V]
3.5
4.0
VDD [V]
f
= 27MHz, 0ppm at V = 2.5V
DD
f = 27MHz, 0ppm at V = 3.3V
OUT DD
OUT
Measurement circuit
VDD
XT
Crystal
XTN
VC
Q
0.1µF
CLOUT = 15pF
VSS
(Including probe
capacitance)
SEIKO NPC CORPORATION —10
5075 series
Measurement circuit
Drive Level
30
25
20
VDD
VSS
0.1µF
Crystal
XT
Tektronix CT-6
XTN
VC
Q
Current Probe
IX'tal
15
10
CLOUT = 15pF
VDD = 3.3V
5
0
VDD = 2.5V
2
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3
VC [V]
DL = (I ) × Re
X’tal
DL: drive level
I
: current flowing to crystal (RMS value)
Re: crystal effective resistance
X’tal
V
= 2.5V, 3.3V, f
= 27MHz, Ta = R.T.
DD
OUT
Negative Resistance
Frequency [MHz]
25 30 35
Frequency [MHz]
25 30 35
15
20
40
45
15
0
20
40
45
0
VC = 0V
VC = 0V
−200
−200
VC = 1.25V
VC = 2.5V
VC = 1.65V
VC = 3.3V
−400
−600
−800
−400
−600
−800
V
= 2.5V, C0 = 2pF, Ta = R.T.
V
= 3.3V, C0 = 2pF, Ta = R.T.
DD
DD
Measurement circuit
VDD
VSS
C0 = 2pF
0.1µF
Network Analyzer
(Agilent 4396B)
S-Parameter Test Set
(Agilent 85046A)
XT
XTN
VC
Q
Note. "C0" value is set, concerning the actual crystal characteristics connected between XT and XTN. The data is measured with Agilent 4396B using
NPC’s original measurement jig. The values may vary with measurement jig and conditions.
SEIKO NPC CORPORATION —11
5075 series
Phase Noise
−60
−80
−60
−80
−100
−100
−120
−140
−160
−120
−140
−160
VC = 3.3V
VC = 1.65V
VC = 0V
VC = 2.5V
VC = 1.25V
VC = 0V
10
100
1,000
10,000
100,000 1,000,000 10,000,000
10
100
1,000
10,000
100,000 1,000,000 10,000,000
Offset Frequency [Hz]
Offset Frequency [Hz]
V
= 2.5V, f
= 27MHz, Ta = R.T.
V
= 3.3V, f
= 27MHz, Ta = R.T.
OUT
DD
OUT
DD
Measurement circuit
VDD
XT
0.1µF
Crystal
200Ω
0.01µF
CLOUT = 15pF
Signal Source
Analyzer
(Agilent E5052A)
XTN
VC
Q
VSS
SEIKO NPC CORPORATION —12
5075 series
Modulation Characteristics
3
0
3
0
−3
−3
−6
−9
−6
−9
−12
−12
0
1
10
100
1000
0
1
10
100
1000
Frequency [kHz]
Frequency [kHz]
V
= 2.5V, f
= 27MHz, Ta = R.T.
V
= 3.3V, f = 27MHz, Ta = R.T.
OUT
DD
OUT
DD
Measurement circuit
VDD
XT
0.1µF
Crystal
XTN
VC
Q
Modulation
signal
R1
R2
Gain-phase
Analyzer
(HP 4194A)
C1
VSS
CLOUT
= 15pF
Demodulation
signal
Modulaiton
Analyzer
(HP 8901B)
C1 = 33µF, R1 = R2 = 1MΩ
VC modulation signal: 100Hz to 100kHz, 0 to V p-p
DD
Output Waveform
Measurement equipment: Oscilloscope; DSO80604B (Agilent)
Measurement circuit
V
V
= 3.3V
= 2.5V
DD
DD
VDD
XT
Crystal
XTN
Q
VC
CLOUT = 15pF
(Including probe
capacitance)
0.1µF
VSS
V
= 2.5V, 3.3V, f
C
= 27MHz, V = 0.5V
C
,
DD
OUT
= 15pF, Ta = R.T.
DD
LOUT
SEIKO NPC CORPORATION —13
5075 series
Please pay your attention to the following points at time of using the products shown in this document.
The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on
human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such
use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and
harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right
to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that
the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties.
Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document.
Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products,
and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or
modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in
compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested
appropriately take steps to obtain required permissions or approvals from appropriate government agencies.
SEIKO NPC CORPORATION
15-6, Nihombashi-kabutocho, Chuo-ku,
Tokyo 103-0026, Japan
Telephone: +81-3-6667-6601
Facsimile: +81-3-6667-6611
http://www.npc.co.jp/
Email: sales@npc.co.jp
NC0810AE 2009.02
SEIKO NPC CORPORATION —14
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