54F20DM [NSC]
Dual 4-Input NAND Gate; 两个4输入与非门
| 型号： | 54F20DM |
| 厂家： | 
National Semiconductor |
| 描述： | Dual 4-Input NAND Gate |
| 文件： | 总6页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 1994
54F/74F20
Dual 4-Input NAND Gate
General Description
This device contains two independent gates, each of which
performs the logic NAND function.
Package
Commercial
74F20PC
Military
Package Description
Number
N14A
J14A
14-Lead (0.300 Wide) Molded Dual-In-Line
×
54F20DM (Note 2)
14-Lead Ceramic Dual-In-Line
74F20SC (Note 1)
74F20SJ (Note 1)
M14A
M14D
W14B
E20A
14-Lead (0.150 Wide) Molded Small Outline, JEDEC
×
14-Lead (0.300 Wide) Molded Small Outline, EIAJ
×
54F20FM (Note 2)
54F20LM (Note 2)
14-Lead Cerpack
20-Lead Ceramic Leadless Chip Carrier, Type C
e
Note 1: Devices also available in 13 reel. Use suffix
SCX and SJX.
×
Note 2: Military grade device with environmental and burn-in processing. Use suffix
e
DMQB, FMQB and LMQB.
Logic Symbol
Connection Diagrams
IEEE/IEC
Pin Assignment
for DIP, SOIC and Flatpak
Pin Assignment
for LCC
TL/F/9462–2
TL/F/9462–1
TL/F/9462–3
Unit Loading/Fan Out
54F/74F
Pin Names
Description
U.L.
Input I /I
IH IL
Output I /I
HIGH/LOW
OH OL
b
20 mA/ 0.6 mA
b
1 mA/20 mA
A , B , C , D
n
Inputs
1.0/1.0
50/33.3
n
n
n
O
Outputs
n
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
C
1995 National Semiconductor Corporation
TL/F/9462
RRD-B30M75/Printed in U. S. A.
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Recommended Operating
Conditions
Free Air Ambient Temperature
Military
Commercial
b
a
55 C to 125 C
§
0 C to 70 C
§
§
b
b
a
65 C to 150 C
Storage Temperature
§
§
§
§
§
a
§
a
55 C to 125 C
Ambient Temperature under Bias
§
Supply Voltage
Military
Commercial
b
b
a
a a
4.5V to 5.5V
a a
4.5V to 5.5V
Junction Temperature under Bias
Plastic
55 C to 175 C
§
§
a
55 C to 150 C
V
Pin Potential to
CC
Ground Pin
b
a
0.5V to 7.0V
b
a
0.5V to 7.0V
Input Voltage (Note 2)
Input Current (Note 2)
Voltage Applied to Output
b
a
30 mA to 5.0 mA
e
in HIGH State (with V
Standard Output
0V)
CC
b
0.5V to 5.5V
0.5V to V
CC
b
a
TRI-STATE Output
É
Current Applied to Output
in LOW State (Max)
twice the rated I (mA)
OL
Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under
these conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
DC Electrical Characteristics
54F/74F
Symbol
Parameter
Units
V
CC
Conditions
Min
Typ
Max
V
V
V
V
Input HIGH Voltage
2.0
V
V
V
Recognized as a HIGH Signal
Recognized as a LOW Signal
IH
Input LOW Voltage
0.8
IL
b
e b
18 mA
Input Clamp Diode Voltage
1.2
Min
Min
I
IN
CD
OH
e b
e b
e b
Output HIGH
Voltage
54F 10% V
2.5
2.5
2.7
I
I
I
1 mA
1 mA
1 mA
CC
OH
OH
OH
74F 10% V
74F 5% V
V
CC
CC
e
e
V
Output LOW
Voltage
54F 10% V
74F 10% V
0.5
I
I
20 mA
20 mA
OL
CC
OL
V
Min
Max
Max
Max
0.0
0.5
CC
OL
I
I
I
Input HIGH
Current
54F
74F
20.0
5.0
IH
e
e
mA
mA
mA
V
V
V
V
2.7V
7.0V
IN
Input HIGH Current
Breakdown Test
54F
74F
100
7.0
BVI
IN
Output HIGH
54F
74F
250
50
CEX
e
V
CC
OUT
Leakage Current
e
All other pins grounded
V
ID
Input Leakage
Test
I
ID
1.9 mA
74F
74F
4.75
e
IOD
I
Output Leakage
Circuit Current
V
150 mV
OD
3.75
mA
0.0
All other pins grounded
b
e
0.5V
I
I
I
I
Input LOW Current
0.6
mA
mA
mA
mA
Max
Max
Max
Max
V
V
V
V
IL
IN
b
b
e
Output Short-Circuit Current
Power Supply Current
Power Supply Current
60
150
0V
HIGH
LOW
OS
OUT
e
0.9
3.4
1.4
5.1
CCH
CCL
O
e
O
2
AC Electrical Characteristics
74F
54F
74F
e a
T
25 C
§
5.0V
A
e
50 pF
e
T
, V
CC
e
Mil
T
, V
Com
e
50 pF
A
A CC
e a
Symbol
Parameter
V
Units
CC
C
C
L
L
e
C
50 pF
L
Min
Typ
Max
Min
Max
Min
Max
t
t
Propagation Delay
2.4
1.5
3.7
3.2
5.0
4.3
2.0
1.5
7.0
6.5
2.4
1.5
6.0
5.3
PLH
PHL
ns
A , B , C , D to O
n
n
n
n
n
Ordering Information
The device number is used to form part of a simplified purchasing code where the package type and temperature range are
defined as follows:
74F 20
S
C
X
Temperature Range Family
Special Variations
e
e
e
74F
54F
Commercial
Military
QB
Military grade device with
environmental and burn-in
processing
Device Type
e
X
Devices shipped in 13 reels
×
Package Code
Temperature Range
e
e
e
e
e
e
P
D
F
L
S
SJ
Plastic DIP
Ceramic DIP
Flatpak
Leadless Chip Carrier (LCC)
Small Outline SOIC JEDEC
Small Outline SOIC EIAJ
e
e
a
C
M
Commercial (0 C to 70 C)
§
§
b a
Military ( 55 C to 125 C)
§
§
Physical Dimensions inches (millimeters)
20-Lead Ceramic Leadless Chip Carrier (L)
NS Package Number E20A
3
Physical Dimensions inches (millimeters) (Continued)
14-Lead Ceramic Dual-In-Line Package (D)
NS Package Number J14A
14-Lead (0.150 Wide) Molded Small Outline Package, JEDEC (S)
×
NS Package Number M14A
4
Physical Dimensions inches (millimeters) (Continued)
14-Lead (0.300 Wide) Molded Small Outline Package, EIAJ (SJ)
×
NS Package Number M14D
14-Lead (0.300 Wide) Molded Dual-In-Line Package (P)
×
NS Package Number N14A
5
Physical Dimensions inches (millimeters) (Continued)
14-Lead Ceramic Flatpak (F)
NS Package Number W14B
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
National Semiconductor
Corporation
2900 Semiconductor Drive
P.O. Box 58090
Santa Clara, CA 95052-8090
Tel: 1(800) 272-9959
TWX: (910) 339-9240
National Semiconductor
GmbH
Livry-Gargan-Str. 10
D-82256 Furstenfeldbruck
Germany
Tel: (81-41) 35-0
Telex: 527649
Fax: (81-41) 35-1
National Semiconductor National Semiconductor
National Semiconductores
Do Brazil Ltda.
Rue Deputado Lacorda Franco
120-3A
Sao Paulo-SP
Brazil 05418-000
Tel: (55-11) 212-5066
Telex: 391-1131931 NSBR BR
Fax: (55-11) 212-1181
National Semiconductor
(Australia) Pty, Ltd.
Building 16
Business Park Drive
Monash Business Park
Nottinghill, Melbourne
Victoria 3168 Australia
Tel: (3) 558-9999
Japan Ltd.
Hong Kong Ltd.
Sumitomo Chemical
Engineering Center
Bldg. 7F
13th Floor, Straight Block,
Ocean Centre, 5 Canton Rd.
Tsimshatsui, Kowloon
1-7-1, Nakase, Mihama-Ku Hong Kong
Chiba-City,
Tel: (852) 2737-1600
Fax: (852) 2736-9960
Ciba Prefecture 261
Tel: (043) 299-2300
Fax: (043) 299-2500
Fax: (3) 558-9998
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
相关型号：
©2020 ICPDF网 联系我们和版权申明