CD4007MW-MIL [NSC]
IC,COMPLEMENTARY PAIR AND INVERTER,CMOS,FP,14PIN,CERAMIC;
| 型号： | CD4007MW-MIL |
| 厂家： | 
National Semiconductor |
| 描述： | IC,COMPLEMENTARY PAIR AND INVERTER,CMOS,FP,14PIN,CERAMIC |
| 文件： | 总4页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 1988
CD4007M/CD4007C Dual
Complementary Pair Plus Inverter
General Description
The CD4007M/CD4007C consists of three complementary
pairs of N- and P-channel enhancement mode MOS transis-
tors suitable for series/shunt applications. All inputs are pro-
Features
Y
Wide supply voltage range
3.0V to 15V
0.45 V (typ.)
Y
High noise immunity
CC
tected from static discharge by diode clamps to V
.
and
DD
V
SS
For proper operation the voltages at all pins must be con-
a
0.3V at all
b
strained to be between V
times.
0.3V and V
DD
SS
Connection Diagram
Dual-In-Line Package
TL/F/5943–1
Top View
Note: All P-channel substrates are connected to V
DD
and all N-channel substrates are connected to V
.
SS
Order Number CD4007
C
1995 National Semiconductor Corporation
TL/F/5943
RRD-B30M105/Printed in U. S. A.
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
b
a
65 C to 150 C
Storage Temperature Range
§
§
Power Dissipation (P )
D
Dual-In-Line
Small Outline
700 mW
500 mW
b
a
0.3V
Voltage at Any Pin
V
SS
0.3V to V
DD
a
a
Operating Temperature Range
CD4007M
CD4007C
Operating V Range
DD
V
SS
3.0V to V
SS
15V
b
b
a
a
55 C to 125 C
§
§
40 C to 85 C
Lead Temperature
(Soldering, 10 seconds)
§
§
260 C
§
DC Electrical Characteristics CD4007M
Limits
b
a
a
125 C
Symbol
Parameter
Conditions
55 C
25 C
Units
§
§
§
Min Typ Max Min Typ Max Min Typ Max
e
e
I
Quiescent Device
Current
V
DD
V
DD
5.0V
10V
0.05
0.1
0.001 0.05
0.001 0.1
3.0 mA
6.0 mA
L
e
e
P
V
V
V
V
Quiescent Device
Dissipation Package
V
V
5.0V
10V
0.25
1.0
0.005 0.25
0.001 1.0
15 mW
60 mW
D
DD
DD
e
e
Output Voltage
Low Level
V
DD
V
DD
5.0V
10V
0.05
0.05
0
0
0.05
0.05
0.05
0.05
V
V
OL
OH
NL
NH
e
e
Output Voltage
High Level
V
DD
V
DD
5.0V
10V
4.95
9.95
4.95 5.0
10
4.95
9.95
V
V
9.95
e
e
e
O
Noise Immunity
(All Inputs)
V
DD
V
DD
5.0V, V
10V, V
3.6V
7.2V
1.5
3.0
2.25 1.5
4.5 3.0
1.4
2.9
V
V
e
O
e
e
e
e
Noise Immunity
(All Inputs)
V
DD
V
DD
50V, V
10V, V
0.95V
2.9V
3.6
7.1
3.5 2.25
4.5
3.5
7.0
V
V
O
O
7.0
e
e
e
e
e
e
I N
D
Output Drive Current
N-Channel
V
DD
V
DD
5.0V, V
10V, V
0.4V, V
0.5V, V
V
DD
0.75
1.6
0.6
1.3
1.0
2.5
0.4
0.95
mA
mA
O
I
V
DD
O
I
e
e
e
e
e
e
b
b
b
b
b
b
b
1.0
I P
D
Output Drive Current
P-Channel
V
DD
V
DD
5.0V, V
10V, V
2.5V, V
9.5V, V
V
V
1.75
1.35
1.4
1.1
4.0
2.5
mA
mA
O
I
SS
SS
b
0.75
O
I
I
Input Current
10
pA
I
DC Electrical Characteristics CD4007C
Limits
b
a
a
85 C
Symbol
Parameter
Conditions
40 C
25 C
Units
§
Min Typ Max Min
§
§
Typ Max Min Typ Max
e
e
I
L
Quiescent Device
Current
V
DD
V
DD
5.0V
10V
0.5
1.0
0.005 0.05
0.005 1.0
15
30
mA
mA
e
e
P
V
V
V
V
Quiescent Device
Dissipation Package
V
V
5.0V
10V
2.5
10
0.025 2.5
0.05 10
75 mW
300 mW
D
DD
DD
e
e
Output Voltage
Low Level
V
DD
V
DD
5.0V
10V
0.05
0.05
0
0
0.01
0.01
0.05
0.05
V
V
OL
OH
NL
NH
e
e
Output Voltage
High Level
V
DD
V
DD
5.0V
10V
4.95
9.95
4.95
9.95
5.0
10
4.95
9.95
V
V
e
e
e
e
Noise Immunity
(All inputs)
V
DD
V
DD
5.0V, V
10V, V
3.6V
7.2V
1.5
3.0
2.25 1.5
4.5 3.0
1.4
2.9
V
V
O
O
O
O
O
e
e
e
e
Noise Immunity
(All Inputs)
V
DD
V
DD
5.0V, V
10V, V
0.95V
2.9V
3.6
7.1
3.5
7.0
2.25
4.5
3.5
7.0
V
V
O
e
e
e
e
e
e
I N
D
Output Drive Current V
N-Channel
5.0V, V
10V, V
0.4V, V
0.5V, V
V
DD
0.35
1.2
0.3
1.0
1.0
2.5
0.24
0.8
mA
mA
DD
DD
I
V
V
DD
O
I
e
e
e
e
e
e
b
b
b
b
b
0.9
I P
D
Output Drive Current V
V
5.0V, V
10V, V
2.5V, V
9.5V, V
V
1.3
0.65
1.1
0.55
4.0
2.5
mA
mA
DD
DD
I
SS
SS
b
b
b
P-Channel
V
0.45
O
I
I
I
Input Current
10
pA
Note 1: This device should not be connected to circuits with the power on because high transient voltages may cause permanent damage.
2
AC Electrical Characteristics* CD4007M
e
e
e
e
20 ns. Typical temperature coefficient for all values of V
DD
T
25 C and C
§
15 pF and rise and fall times
0.3%/ C
§
A
L
Symbol
Parameter
Conditions
Min
Typ
Max
Units
e
e
e
t
t
t
Propagation Delay Time
V
DD
5.0V
10V
35
20
60
40
ns
ns
PLH
PHL
V
DD
e
e
e
t
Transition Time
V
DD
5.0V
10V
50
30
75
40
ns
ns
TLH
THL
V
DD
C
I
Input Capacitance
Any Input
5.0
pF
*AC Parameters may be generated by DC correlated testing.
AC Electrical Characteristics* CD4007C
e
e
e
e
20 ns. Typical temperature coefficient for all values of V
DD
T
25 C and C
§
15 pF and rise and fall times
0.3%/ C
§
A
L
Symbol
Parameter
Conditions
Min
Typ
Max
Units
e
e
e
t
t
t
Propagation Delay Time
V
DD
5.0V
10V
35
20
75
50
ns
ns
PLH
PHL
V
DD
e
e
e
t
Transition Time
V
DD
5.0V
10V
50
30
100
50
ns
ns
TLH
THL
V
DD
C
I
Input Capacitance
Any Input
5
pF
*AC Parameters are guaranteed by DC correlated testing.
AC Test Circuits
TL/F/5943–2
TL/F/5943–3
TL/F/5943–4
Switching Time Waveforms
TL/F/5943–5
3
Physical Dimensions inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number CD4007MJ or CD4007CJ
NS Package Number J14A
Molded Dual-In-Line Package (N)
Order Number CD4007MN or CD4007CN
NS Package Number N14A
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SEMICONDUCTOR CORPORATION. As used herein:
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failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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