CD4012 [NSC]

Dual 4-Input NOR(NAND) Gate; 双4输入NOR (NAND )门
CD4012
型号: CD4012
厂家: National Semiconductor    National Semiconductor
描述:

Dual 4-Input NOR(NAND) Gate
双4输入NOR (NAND )门

文件: 总6页 (文件大小:116K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
March 1988  
CD4002M/CD4002C Dual 4-Input NOR Gate  
CD4012M/CD4012C Dual 4-Input NAND Gate  
General Description  
Features  
Y
Wide supply voltage range  
3.0V to 15V  
10 nW (typ.)  
These NOR and NAND gates are monolithic complementa-  
ry MOS (CMOS) integrated circuits. The N- and P-channel  
enhancement mode transistors provide a symmetrical cir-  
cuit with output swings essentially equal to the supply volt-  
age. This results in high noise immunity over a wide supply  
voltage range. No DC power other than that caused by leak-  
age current is consumed during static conditions. All inputs  
are protected against static discharge and latching condi-  
tions.  
Y
Low power  
Y
High noise immunity  
0.45 V  
(typ.)  
DD  
Applications  
Y
Y
Y
Y
Y
Automotive  
Alarm system  
Y
Data terminals  
Industrial controls  
Remote metering  
Computers  
Y
Instrumentation  
Y
Medical Electronics  
Connection Diagrams  
CD4002  
Dual-In-Line Package  
CD4012  
Dual-In-Line Package  
TL/F/5940–1  
TL/F/5940–2  
Top View  
Top View  
Order Number CD4002 or CD4012  
C
1995 National Semiconductor Corporation  
TL/F/5940  
RRD-B30M105/Printed in U. S. A.  
Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales  
Office/Distributors for availability and specifications.  
b
a
65 C to 150 C  
Storage Temperature Range (T )  
S
§
§
Power Dissipation (P )  
D
Dual-In-Line  
Small Outline  
700 mW  
500 mW  
b
a
0.3V  
Voltage at Any Pin  
V
SS  
0.3V to V  
DD  
a
a
Operating Temperature Range  
CD4002M, CD4012M  
CD4002C, CD4012C  
Operating Range (V  
)
V
SS  
3.0V to V  
SS  
15V  
DD  
b
b
a
a
55 C to 125 C  
§
§
40 C to 85 C  
Lead Temperature (T )  
L
(Soldering, 10 seconds)  
§
§
260 C  
§
DC Electrical Characteristics CD4002M, CD4012M  
Limits  
b
a
a
Symbol  
Parameter  
Conditions  
55 C  
§
25 C  
§
Typ Max  
125 C  
§
Units  
Min  
Max  
Min  
Min  
Max  
e
e
I
Quiescent  
Device Current  
V
DD  
V
DD  
5.0V  
10V  
0.05  
0.1  
0.001 0.05  
0.001 0.1  
3.0  
6
mA  
mA  
DD  
e
e
P
V
V
V
V
Quiescent Device  
Dissipation/Package  
V
V
5.0V  
10V  
0.25  
1.0  
0.005 0.25  
1.0  
15  
60  
mW  
mW  
D
DD  
DD  
0.01  
e
e
e
e
Output Voltage  
Low Level  
V
DD  
V
DD  
5.0V, V  
10V, V  
V
, I  
0A  
0A  
0.05  
0.05  
0
0
0.05  
0.05  
0.05  
0.05  
V
V
OL  
OH  
NL  
NH  
I
DD  
, I  
O
e
e
V
DD  
I
O
e
e
e
e
e
e
Output Voltage  
High Level  
V
DD  
V
DD  
5.0V, V  
10V, V  
V
SS  
, I  
O
0A  
0A  
4.95  
9.95  
4.95  
9.95  
5.0  
10  
4.95  
9.95  
V
V
I
V , I  
SS  
I
O
e
e
e
e
0A  
O
Noise Immunity  
(All Inputs)  
V
DD  
V
DD  
5.0V, V  
10V, V  
3.6V, I  
7.2V, I  
1.5  
3.0  
1.5  
3.0  
2.25  
4.5  
1.4  
2.9  
V
V
O
O
O
e
e
0A  
O
O
e
e
e
e
e
0A  
0A  
Noise Immunity  
(All Inputs)  
V
DD  
V
DD  
5.0V, V  
10V, V  
0.95V, I  
2.9V, I  
O
1.4  
2.9  
1.5  
3.0  
2.25  
4.5  
1.5  
3.0  
V
V
O
e
O
e
e
e
e
e
e
I N  
D
Output Drive Current  
N-Channel (4002)  
(Note 2)  
V
DD  
V
DD  
5.0V, V  
10V, V  
0.4V, V  
0.5V, V  
V
DD  
0.5  
1.1  
0.40  
0.9  
1.0  
2.5  
0.28  
0.65  
mA  
mA  
I
V
V
V
V
O
I
DD  
e
e
e
e
b
b
b
b
b
b
b
b
I P  
D
Output Drive Current  
P-Channel (4002)  
(Note 2)  
V
DD  
V
DD  
5.0V, V  
10V, V  
2.5V, V  
9.5V, V  
V
SS  
SS  
0.62  
0.62  
0.5  
0.5  
2.0  
1.0  
0.35  
0.35  
mA  
mA  
O
O
O
I
I
I
e
e
O
I
e
e
e
e
e
e
I N  
D
Output Drive Current  
N-Channel (4012)  
(Note 2)  
V
DD  
V
DD  
5.0V, V  
10V, V  
0.4V, V  
0.5V, V  
V
DD  
DD  
0.31  
0.63  
0.25  
0.5  
0.5  
0.6  
0.175  
0.35  
mA  
mA  
O
I
e
e
e
e
e
e
b
b
b
b
b
b
0.175  
b
0.4  
I P  
D
Output Drive Current  
P-Channel (4012)  
(Note 2)  
V
DD  
V
DD  
5.0V, V  
10V, V  
2.5V, V  
9.5V, V  
V
SS  
SS  
0.31  
0.75  
0.25  
0.6  
0.5  
1.2  
mA  
mA  
b
O
I
I
Input Current  
10  
pA  
I
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’  
they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device  
operation.  
Note 2: I N and I P are tested one output at a time.  
D
D
2
DC Electrical Characteristics CD4002C, CD4012C  
Limits  
b
a
a
Symbol  
Parameter  
Conditions  
55 C  
§
25 C  
§
Typ Max  
85 C  
§
Units  
Min  
Max  
Min  
Min  
Max  
e
e
I
Quiescent  
Device Current  
V
DD  
V
DD  
5.0V  
10V  
0.5  
5.0  
0.005 0.5  
0.005 5.0  
15  
30  
mA  
mA  
DD  
e
e
P
V
V
V
V
Quiescent Device  
Dissipation/Package  
V
V
5.0V  
10V  
2.5  
50  
0.025 2.5  
50  
75  
mW  
D
DD  
DD  
0.05  
300 mW  
e
e
e
e
Output Voltage  
Low Level  
V
DD  
V
DD  
5.0V, V  
10V, V  
V
, I  
0A  
0A  
0.05  
0.05  
0
0
0.05  
0.05  
0.05  
0.05  
V
V
OL  
OH  
NL  
NH  
I
DD  
O
O
e
e
V , I  
DD  
I
O
e
e
e
e
e
e
Output Voltage  
High Level  
V
DD  
V
DD  
5.0V, V  
10V, V  
V
SS  
, I  
0A  
0A  
4.95  
9.95  
4.95  
9.95  
5.0  
10  
4.95  
9.95  
V
V
I
V , I  
SS  
I
O
t
t
e
e
e
0A  
e
0A  
Noise Immunity  
(All Inputs)  
V
DD  
V
DD  
5.0V, V  
10V, V  
3.6V, I  
O
7.2V, I  
1.5  
3.0  
1.5  
3.0  
2.25  
4.5  
1.4  
2.9  
V
V
O
O
O
O
O
s
s
e
e
e
O
Noise Immunity  
(All Inputs)  
V
DD  
V
DD  
5.0V, V  
10V, V  
0.95V, I  
2.9V, I  
0A  
0A  
1.4  
2.9  
1.5  
3.0  
2.25  
4.5  
1.5  
3.0  
V
V
e
O
O
e
e
e
e
e
0.4V, V V  
I
I N  
D
Output Drive Current  
N-Channel (4002)  
(Note 2)  
V
DD  
V
DD  
5.0V, V  
10V, V  
0.35  
0.72  
0.3  
0.6  
1.0  
2.5  
0.24  
0.48  
mA  
mA  
DD  
e
0.5V, V  
V
V
V
V
O
I
DD  
e
e
e
e
I N  
D
Output Drive Current  
N-Channel (4012)  
(Note 2)  
V
DD  
V
DD  
5.0V, V  
10V, V  
0.4V, V  
0.5V, V  
V
DD  
DD  
0.145  
0.3  
0.12  
0.25  
0.5  
0.6  
0.095  
0.2  
mA  
mA  
O
O
O
I
I
I
e
e
O
I
e
e
e
e
e
e
b
b
b
b
b
0.24  
b
0.2  
I P  
D
Output Drive Current  
P-Channel (4002)  
(Note 2)  
V
DD  
V
DD  
5.0V, V  
10V, V  
2.5V, V  
9.5V, V  
V
SS  
SS  
0.35  
0.3  
0.3  
0.25  
2.0  
1.0  
mA  
mA  
b
b
O
I
e
e
e
e
e
e
b
b
b
b
b
0.095  
b
0.24  
I P  
D
Output Drive Current  
P-Channel (4012)  
(Note 2)  
V
DD  
V
DD  
5.0V, V  
10V, V  
2.5V, V  
9.5V, V  
V
SS  
SS  
0.145  
0.35  
0.12  
0.3  
0.5  
1.2  
mA  
mA  
b
b
O
I
I
Input Current  
10  
pA  
I
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’  
they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device  
operation.  
Note 2: I N and I P are tested one output at a time.  
D
D
3
e
0.3%/ C.  
e
25 C, C  
§
L
e
15 pF, and input rise and fall times 20 ns. Typical  
AC Electrical Characteristics* T  
A
e
temperature coefficient for all values of V  
DD  
§
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
CD4002M  
e
e
t
t
t
t
Propagation Delay Time  
High to Low Level  
V
V
5.0V  
10V  
35  
25  
50  
40  
ns  
ns  
PHL  
PLH  
THL  
TLH  
DD  
DD  
e
e
Propagation Delay Time  
Low to High Level  
V
DD  
V
DD  
5.0V  
10V  
35  
25  
50  
40  
ns  
ns  
e
e
Transition Time High  
to Low Level  
V
DD  
V
DD  
5.0V  
10V  
65  
35  
175  
75  
ns  
ns  
e
e
Transition Time Low  
to High Level  
V
DD  
V
DD  
5.0V  
10V  
65  
35  
125  
70  
ns  
ns  
C
IN  
Input Capacitance  
Any Input  
5.0  
pF  
CD4002C  
e
e
t
Propagation Delay Time  
High to Low Level  
V
DD  
V
DD  
5.0V  
10V  
35  
25  
120  
65  
ns  
ns  
PHL  
e
e
T
Propagation Delay Time  
Low to High Level  
V
V
5.0V  
10V  
35  
25  
80  
55  
ns  
ns  
PLH  
THL  
TLH  
DD  
DD  
e
e
t
t
Transition Time High  
to Low Level  
V
DD  
V
DD  
5.0V  
10V  
65  
35  
300  
125  
ns  
ns  
e
e
Transition Time Low  
to High Level  
V
DD  
V
DD  
5.0V  
10V  
65  
35  
200  
115  
ns  
ns  
C
IN  
Input Capacitance  
Any Input  
5.0  
pF  
*AC Parameters are guaranteed by DC correlated testing.  
e
0.3%/ C.  
e
25 C, C  
§
L
e
AC Electrical Characteristics* T  
15 pF, and input rise and fall times  
20 ns. Typical  
A
e
temperature coefficient for all values of V  
§
DD  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
CD4012M  
e
e
t
t
t
t
Propagation Delay Time  
High to Low Level  
V
V
5.0V  
10V  
50  
25  
75  
40  
ns  
ns  
PHL  
PLH  
THL  
TLH  
DD  
DD  
e
e
Propagation Delay Time  
Low to High Level  
V
DD  
V
DD  
5.0V  
10V  
50  
25  
75  
40  
ns  
ns  
e
e
Transition Time High  
to Low Level  
V
DD  
V
DD  
5.0V  
10V  
75  
50  
125  
75  
ns  
ns  
e
e
Transition Time Low  
to High Level  
V
DD  
V
DD  
5.0V  
10V  
75  
40  
100  
60  
ns  
ns  
C
IN  
Input Capacitance  
Any Input  
5.0  
pF  
CD4012C  
e
e
t
Propagation Delay Time  
High to Low Level  
V
DD  
V
DD  
5.0V  
10V  
50  
25  
100  
50  
ns  
ns  
PHL  
e
e
T
Propagation Delay Time  
Low to High Level  
V
V
5.0V  
10V  
50  
25  
100  
50  
ns  
ns  
PLH  
THL  
TLH  
DD  
DD  
e
e
t
t
Transition Time High  
to Low Level  
V
DD  
V
DD  
5.0V  
10V  
75  
50  
150  
100  
ns  
ns  
e
e
Transition Time Low  
to High Level  
V
DD  
V
DD  
5.0V  
10V  
75  
40  
125  
75  
ns  
ns  
C
IN  
Input Capacitance  
Any Input  
5.0  
pF  
*AC Parameters are guaranteed by DC correlated testing.  
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature  
Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual  
device operation.  
4
Physical Dimensions inches (millimeters)  
Ceramic Dual-In-Line Package (J)  
Order Number CD4002MJ, CD4002CJ, CD4012MJ or CD4012CJ  
NS Package Number J14A  
5
Physical Dimensions inches (millimeters) (Continued)  
Molded Dual-In-Line Package (N)  
Order Number CD4002MN, CD4002CN, CD4012MN or CD4012CN  
NS Package Number N14A  
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SEMICONDUCTOR CORPORATION. As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant  
into the body, or (b) support or sustain life, and whose  
failure to perform, when properly used in accordance  
with instructions for use provided in the labeling, can  
be reasonably expected to result in a significant injury  
to the user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
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Corporation  
National Semiconductor  
Europe  
National Semiconductor  
Hong Kong Ltd.  
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Japan Ltd.  
a
1111 West Bardin Road  
Arlington, TX 76017  
Tel: 1(800) 272-9959  
Fax: 1(800) 737-7018  
Fax:  
(
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@
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