CD4512BMW-MIL [NSC]
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| 型号： | CD4512BMW-MIL |
| 厂家： | 
National Semiconductor |
| 描述： | 暂无描述 |
| 文件： | 总6页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 1988
CD4512BM/CD4512BC 8-Channel Buffered Data Selector
General Description
Features
Y
Wide supply voltage range
3.0V to 15V
0.45 V (typ.)
The CD4512BM/CD4512BC buffered 8-channel data selec-
tor is a complementary MOS (CMOS) circuit constructed
with N- and P-channel enhancement mode transistors. This
data selector is primarily used as a digital signal multiplexer
selecting 1 of 8 inputs and routing the signal to a TRI-
Y
High noise immunity
DD
Y
TRI-STATE output
Y
Low quiescent power dissipation
0.25 mW/package
@
e
5.0V
(typ.)
V
CC
STATE output. A high level at the Inhibit input forces a low
É
Y
Plug-in replacement for Motorola MC14512
level at the output. A high level at the Output Enable (OE)
input forces the output into the TRI-STATE condition. Low
levels at both the Inhibit and (OE) inputs allow normal oper-
ation.
Connection Diagram and Truth Table
Dual-In-Line Package
Order Number CD4512B
TL/F/5993–1
Top View
Address Inputs
Control Inputs
Output
Z
C
B
A
Inhibit
OE
0
0
0
0
0
1
0
0
0
0
0
0
0
0
1
j
0
0
0
0
0
0
0
0
0
1
X0
X1
X2
X3
X4
X5
X6
X7
0
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
j
j
j
j
j
j
Hi-Z
e
j
Don’t care
e
Hi-Z
TRI-STATE condition
e
Xn
Data at input n
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
C
1995 National Semiconductor Corporation
TL/F/5993
RRD-B30M105/Printed in U. S. A.
Absolute Maximum Ratings (Notes 1 & 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Recommended Operating
Conditions (Note 2)
DC Supply Voltage (V
)
DD
3.0 to 15 V
DC
Input Voltage (V
)
IN
0 to V V
DD DC
b
a
0.5 to 18 V
Supply Voltage (V
)
DD
DC
Operating Temperature Range (T )
A
b
a
0.5 V
Input Voltage (V
IN
)
0.5 to V
DD
DC
b
b
a
55 C to 125 C
CD4512BM
CD4512BC
§
40 C to 85 C
§
§
b
a
65 C to 150 C
Storage Temperature Range (T )
S
§
§
a
§
Power Dissipation (P )
D
Dual-In-Line
Small Outline
700 mW
500 mW
Lead Temperature, (T )
L
(Soldering, 10 seconds)
260 C
§
DC Electrical Characteristics CD4512BM (Note 2)
b
a
a
55 C
§
25 C
125 C
§
§
Typ
Symbol
Parameter
Conditions
Units
Min
Max
Min
Max
Min
Max
e
e
e
e
V
I
Quiescent Device
Current
V
DD
V
DD
V
DD
5V, V
IN
10V, V
15V, V
or V
DD SS
5.0
10
20
0.005
0.010
0.015
5.0
10
20
150
300
600
mA
mA
mA
DD
e
V
V
or V
or V
IN
IN
DD
DD
SS
SS
e
e
e
e
V
V
V
V
Low Level
Output Voltage
V
V
V
5V
10V
15V
0.05
0.05
0.05
0
0
0
0.05
0.05
0.05
0.05
0.05
0.05
V
V
V
OL
OH
IL
DD
DD
DD
k
k
I
1 mA
1 mA
l
l
OL
l
(
e
e
e
High Level
Output Voltage
V
DD
V
DD
V
DD
5V
10V
15V
4.95
9.95
14.95
4.95
9.95
14.95
5.0
10.0
15.0
4.95
9.95
14.95
V
V
V
I
OH
l
(
e
e
e
e
0.5V
Low Level
Input Voltage
V
DD
V
DD
V
DD
5V, V
10V, V
15V, V
1.5
3.0
4.0
2.25
4.50
6.75
1.5
3.0
4.0
1.5
3.0
4.0
V
V
V
O
e
e
1.0V
1.5V
O
O
e
e
e
e
4.5V
High Level
Input Voltage
V
DD
V
DD
V
DD
5V, V
10V, V
15V, V
3.5
7.0
11.0
3.5
7.0
11.0
2.75
5.50
8.25
3.5
7.0
11.0
V
V
V
IH
O
e
e
9.0V
13.5V
O
O
e
e
e
e
0.4V
I
I
Low Level Output
Current (Note 3)
V
DD
V
DD
V
DD
5V, V
10V, V
15V, V
0.64
1.6
4.2
0.51
1.3
3.4
0.78
2.0
7.8
0.36
0.9
2.4
mA
mA
mA
OL
O
e
e
0.5V
1.5V
O
O
e
e
e
e
e
e
b
b
b
b
b
b
b
High Level Output
Current (Note 3)
V
DD
V
DD
V
DD
5V, V
10V, V
15V, V
4.6V
9.5V
13.5V
0.25
0.62
0.2
0.5
1.5
0.14
0.35
mA
mA
mA
OH
O
O
O
b
b
1.8
1.1
b
5
5
e
e
e
e
b
0.1
b
b
0.1
b
1.0
I
I
Input Current
V
V
15V, V
15V, V
0V
15V
0.1
0.1
10
0.1
0.1
1.0
3.0
mA
mA
IN
DD
DD
IN
IN
10b
5
e
e
e
e
TRI-STATE
Output Current
V
DD
V
DD
15V, V
15V, V
0V
15V
OZ
O
O
b
b
g
g
g
10
mA
DC Electrical Characteristics CD4512BC (Note 2)
b
a
a
85 C
40 C
§
25 C
§
Typ
§
Symbol
Parameter
Conditions
Units
Min
Max
Min
Max
Min
Max
e
e
e
e
V
I
Quiescent Device
Current
V
DD
V
DD
V
DD
5V, V
IN
10V, V
15V, V
or V
DD SS
20
40
80
0.005
0.010
0.015
20
40
80
150
300
600
mA
mA
mA
DD
e
V
V
or V
or V
IN
IN
DD
DD
SS
SS
e
e
e
e
V
OL
V
OH
V
IL
Low Level
Output Voltage
V
V
V
5V
10V
15V
0.05
0.05
0.05
0
0
0
0.05
0.05
0.05
0.05
0.05
0.05
V
V
V
DD
DD
DD
k
k
I
1 mA
1 mA
l
l
OL
l
(
e
e
e
High Level
Output Voltage
V
DD
V
DD
V
DD
5V
10V
15V
4.95
9.95
14.95
4.95
9.95
14.95
5.0
10.0
15.0
4.95
9.95
14.95
V
V
V
I
OH
l
(
e
e
e
e
0.5V
Low Level
Input Voltage
V
DD
V
DD
V
DD
5V, V
10V, V
15V, V
1.5
3.0
4.0
2.25
4.50
6.75
1.5
3.0
4.0
1.5
3.0
4.0
V
V
V
O
e
e
1.0V
1.5V
O
O
2
DC Electrical Characteristics CD4512BC (Note 2) (Continued)
b
a
a
85 C
40 C
§
25 C
§
§
Symbol
Parameter
Conditions
Units
Min
Max
Min
Typ
Max
Min
Max
e
e
e
e
4.5V
V
High Level
V
V
V
5V, V
O
3.5
7.0
3.5
7.0
2.75
5.50
8.25
3.5
7.0
V
V
V
IH
OL
OH
DD
DD
DD
e
e
Input Voltage
10V, V
15V, V
9.0V
O
O
13.5V
11.0
11.0
11.0
e
e
e
e
0.4V
I
I
Low Level Output
Current
V
DD
V
DD
V
DD
5V, V
0.52
1.3
0.44
1.1
0.78
2.0
0.36
0.9
mA
mA
mA
O
e
e
10V, V
15V, V
0.5V
1.5V
O
O
(Note 3)
3.6
3.4
7.8
2.4
e
e
e
e
O
b
b
b
b
b
0.12
High Level Output
Current
V
DD
V
DD
V
DD
5V, V
4.6V
0.2
0.5
1.4
0.16
mA
mA
mA
e
e
b
b
b
b
10V, V
15V, V
9.5
0.4
1.2
0.3
1.0
O
O
(Note 3)
13.5V
b
5
5
e
e
e
e
b
b
b
b
I
I
Input Current
V
V
15V, V
15V, V
0V
0.3
10
0.3
1.0
1.0
7.5
mA
mA
IN
DD
IN
5
15V
0.3
10b
0.3
1.0
DD
IN
e
e
e
e
TRI-STATE
V
V
15V, V
15V, V
0V
OZ
DD
O
b
g
g
g
g
1.0
10
mA
Output Current
15V
DD
O
e
e
e
e
20 ns, C 50 pF
L
AC Electrical Characteristics* T
25 C, t
§
t
f
A
r
CD4512BM
Typ
CD4512BC
Typ
Symbol
Parameter
Conditions
Units
Min
Max
Min
Max
e
e
e
t
t
t
t
t
Propagation Delay
High-to-Low Level
V
V
V
5V
225
75
500
175
130
225
75
750
200
150
ns
ns
ns
PHL
DD
DD
DD
10V
15V
57
57
e
e
e
Propagation Delay
Low-to-High Level
V
DD
V
DD
V
DD
5V
225
75
500
175
130
225
75
750
200
150
ns
ns
ns
PLH
10V
15V
57
57
e
e
e
, t
THL TLH
Transition Time
V
DD
V
DD
V
DD
5V
70
35
25
200
100
80
70
35
25
200
100
80
ns
ns
ns
10V
15V
e
e
e
, t
PHZ PLZ
Propagation Delay into
V
DD
V
DD
V
DD
5V
50
25
19
125
75
50
25
19
125
75
ns
ns
ns
TRI-STATE from Logic Level
10V
15V
60
60
e
e
e
, t
PZH PZL
Propagation Delay to Logic
Level from TRI-STATE
V
DD
V
DD
V
DD
5V
50
25
19
125
75
50
25
19
125
75
ns
ns
ns
10V
15V
60
60
C
C
Input Capacitance
(Note 4)
(Note 4)
7.5
7.5
15
15
7.5
7.5
15
15
pF
pF
pF
IN
TRI-STATE Output
Capacitance
OUT
C
PD
Power Dissipation Capacity
(Note 5)
150
150
*AC Parameters are guaranteed by DC correlated testing.
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The tables of ‘‘Recommended Operating Conditions’’ and ‘‘Electrical Characteristics’’ provide conditions for actual device
operation.
e
Note 2: V
0V unless otherwise specified.
SS
Note 3: I
and I are tested one output at a time.
OL
OH
Note 4: Capacitance guaranteed by periodic testing.
Note 5: C determines the no load AC power of any CMOS device. For complete explanation, see 54C/74C Family Characteristics Application Note, AN-90.
PD
3
Logic Diagram
TL/F/5993–2
Typical Application
Serial Data Routing Interface
TL/F/5993–3
4
AC Test Circuit and Switching Time Waveforms
TL/F/5993–5
TL/F/5993–4
Input Connections for t , t , t
f
, t
PLH PHL
r
Test Inhibit
A
X0
1
2
3
PG
GND
PG
V
DD
DD
GND
GND
V
GND
PG
TRI-STATE AC Test Circuit and Switching Time Waveforms
TL/F/5993–7
TL/F/5993–6
Switch Positions for TRI-STATE Test
Test
S1
S2
S3
S4
t
Open Closed Closed Open
Closed Open Open Closed
Closed Open Open Closed
Open Closed Closed Open
PHZ
t
PLZ
PZL
PZH
t
t
5
Physical Dimensions inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number CD4512BMJ or CD4512BCJ
NS Package Number J16A
Molded Dual-In-Line Package (N)
Order Number CD4512BMN or CD4512BCN
NS Package Number N16E
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Corporation
National Semiconductor
Europe
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a
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@
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