DS26F31MQML_技术文档

March 2006

DS26F31MQML

Quad High Speed Differential Line Drivers

The DS26F31M offers optimum performance when used

with the DS26F32 Quad Differential Line Receiver.

General Description

The DS26F31M is a quad differential line driver designed for

digital data transmission over balanced lines. The

DS26F31M meets all the requirements of EIA Standard RS-

422 and Federal Standard 1020. It is designed to provide

unipolar differential drive to twisted-pair or parallel-wire

transmission lines.

Features

n Operation from single +5.0V supply

n Outputs won’t load line when V_CC= 0V

n Output short circuit protection

n Meets the requirements of EIA standard RS-422

n High output drive capability for 100Ω terminated

transmission lines

The DS26F31M offers improved performance due to the use

of state-of-the-art L-FAST bipolar technology. The L-FAST

technology allows for higher speeds and lower currents by

utilizing extremely short gate delay times. Thus, the

DS26F31M features lower power, extended temperature

range, and improved specifications.

The circuit provides an enable and disable function common

to all four drivers. The DS26F31M features TRI-STATE^®

outputs and logical OR-ed complementary enable inputs.

The inputs are all LS compatible and are all one unit load.

Ordering Information

NS Part Number

DS26F31ME/883

DS26F31MJ/883

DS26F31MW/883

DS26F31MWG/883

DS26F31MJ-QMLV

DS26F31MJFQMLV

SMD Part Number

5962–7802302M2A

5962–7802302MEA

5962–7802302MFA

5962–7802302MZA

5962–7802302VEA

5962F7802302VEA

300k rd(Si)

NS Package Number

Package Description

20LD Leadless Chip Carrier

16LD Ceramic DIP

E20A

J16A

W16A

WG16A

J16A

16LD Ceramic FlatPack

16LD Ceramic SOIC

16LD Ceramic DIP

J16A

16LD Ceramic DIP

DS26F31MW-QMLV

DS26F31MWFQMLV

5962–7802302VFA

5962F7802302VFA

300k rd(Si)

W16A

16LD Ceramic FlatPack

DS26F31MWGFQMLV

5962F7802302VZA

300k rd(Si)

WG16A

16LD Ceramic SOIC

TRI-STATE^®is a registered trademark of National Semiconductor Corporation.

DS201632

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Connection and Logic Diagrams

20-Lead Ceramic Leadless Chip Carrier (E)

16-Lead Ceramic DIP Pictured

20163207

See NS Package Number E20A

20163201

Top View

See NS Package Numbers J16A, W16A, or WG16A

20163202

FIGURE 1. Logic Symbol

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2

Absolute Maximum Ratings (Note 1)

Storage Temperature Range

Lead Temperature (Soldering, 60 sec.)

Supply Voltage

−65˚C ≤ T_A≤ +175˚C

300˚C

7.0V

Input Voltage

7.0V

Output Voltage

5.5V

Maximum Power Dissipation at 25˚C (Note 3)

Thermal Resistance

450mW

θ_JA

@

Ceramic DIP, derate above +25˚C 11.4mW/˚C

88˚C/mW

151˚C/mW

81˚C/mW

@

Ceramic Flatpack, derate above +25˚C 6.6 mW/˚C

@

Leadless Chip Carrier, derate above +25˚C 12.3 mW/˚C

θ_JC

Ceramic DIP

14˚C/mW

13˚C/mW

15˚C/mW

Ceramic Flatpack

Leadless Chip Carrier

Recommended Operating Range

Temperature

−55˚C ≤ T_A≤ +125˚C

Supply Voltage

4.5V to 5.5V

Radiation Features

DS26F31MJFQMLV

DS26F31MWFQMLV

DS26F31MWGFQMLV

300 krads (Si)

Quality Conformance Inspection

Mil-Std-883, Method 5005 - Group A

Subgroup

Description

Static tests at

Temp ˚C

25

1

2

Static tests at

125

-55

25

3

Static tests at

4

Dynamic tests at

Functional tests at

Switching tests at

Settling time at

5

125

-55

25

6

7

8A

8B

9

125

-55

25

10

11

12

13

14

125

-55

25

125

-55

3

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DS26F31M Electrical Characteristics

DC Parameters ^{(Note 8)}

Sub-

groups

1, 2, 3

Symbol

Parameter

Conditions

Notes

Min Max

Units

V_IH

Logical "1" Input Voltage

Logical "0" Input Voltage

Logical "1" Output Voltage

V_CC= 4.5V

(Note 4)

2.0

0.8

2.5

V

V_IL

V_CC= 5.5V

V_OH

V_CC= 4.5V, I_OH= -20mA,

V_IL= 0.8V, V_IH= 2V

V_CC= 4.5V, I_OL= 20mA,

V_IL= 0.8V, V_IH= 2V

V_CC= 5.5V, V_I= 2.7V

V_CC= 5.5V, V_I= 0.4V

V_CC= 5.5V, V_I= 7V

V_CC= 5.5V, V_O= 0.5V

V_CC= 5.5V, V_O= 2.5V

V_CC= 4.5V, I_I= -18mA

V_CC= 5.5V, V_O= 0V

V_CC= 5.5V, V_I= 0.8V or 2V,

VEn = 0.8V, VEn = 2V

V_CC= 5.5V, VEn = 2V,

VEn = 0.8V

V_OL

Logical "0" Output Voltage

0.5

V

1, 2, 3

I_IH

I_IL

I_I

Logical "1" Input Current

Logical "0" Input Current

Input Reverse Current

(Note 7)

-2.0

20

µA

mA

µA

V

1, 2, 3

100 -200

-0.01 0.1

I_OZ

TRI-STATE Output Current

-20

20

V_I

Input Clamp Voltage

-1.5

I_{SC Min}

I_{SC Max}

I_{CC Dis}

Output Short Circuit Current

Power Supply Current

-30

mA

-150

50

I_{CC En}

Power Supply Current

40

mA

1, 2, 3

AC Parameters - Propagation Delay Time

The following conditions apply, unless otherwise specified.

AC:

V_CC= 5V, C_L= 50pF or equivalent impedance provided by diode load

Parameter Conditions

Input to Output

Sub-

groups

9

Symbol

Notes

Min Max

Units

t_PLH

(Note 5)

(Note 6)

(Note 5)

(Note 6)

(Note 5)

(Note 6)

(Note 5)

(Note 6)

(Note 5)

(Note 6)

16

24

15

23

17

25

15

23

38

56

35

53

23

30

20

27

28

40

25

37

nS

10, 11

9

C_L= 30pF

10, 11

9

t_PHL

Input to Output

Disable Time

Enable Time

10, 11

9

C_L= 30pF

10, 11

9

t_LZ

10, 11

9

C_L= 10 pF

C_L= 30pF

10, 11

9

t_HZ

10, 11

9

10, 11

9

t_ZL

10, 11

9

10, 11

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4

DS26F31M Electrical Characteristics (Continued)

AC Parameters - Propagation Delay Time (Continued)

The following conditions apply, unless otherwise specified.

AC:

V_CC= 5V, C_L= 50pF or equivalent impedance provided by diode load

Parameter Conditions

Enable Time

Sub-

groups

9

Symbol

Notes

Min Max

Units

t_ZH

(Note 5)

(Note 6)

(Note 5)

(Note 6)

32

52

nS

10, 11

9

C_L= 30 pF

30

50

10, 11

9

Skew

Output to Output

6.0

9.0

4.5

7.0

10, 11

9

C_L= 30pF

10, 11

DC Drift Parameters

This section applies to -QMLV devices only and shall be read & recorded at T_A= +25˚C before and after each burn-in & Sub-

group B5, and shall not change by more than the limits indicated. The delta rejects shall be included in the PDA calculations.

Sub-

groups

Symbol

V_OH

Parameter

Conditions

Notes

Min Max

Units

Logical "1" Output Voltage

V_CC= 4.5V, I_OH= -20mA,

V_IL= 0.8V, V_IH= 2V.

-250 250

mV

1

V_OL

Logical "0" Output Voltage

Power Supply Current

V_CC= 4.5V, I_OL= 20mA,

V_IL= 0.8V, V_IH= 2V.

-50

-8.0

50

8.0

mV

mA

1

I_{CC En}

I_{CC Dis}

V_CC= 5.5V, V_I= 0.8V or 2V,

VEn = 2V, VEn = 0.8V.

V_CC= 5.5V, V_I= 0.8V or 2V,

VEn = 0.8V, VEn = 2V.

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is

functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed

specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test

conditions.

Note 2: All currents into the device pins are positive; all currents out of the device pins are negative. All voltages are referenced to ground unless otherwise

specified.

Note 3: Power dissipation must be externally controlled at elevated temperatures.

Note 4: Parameter tested go-no-go only.

Note 5: Tested at 50pF, system capacitance exceed 10 and 30pF.

Note 6: Testing at 50pF guarantees limits at 10 and 30pF.

Note 7: The minimum limits apply to device Class Q & V. The limits specified for the INPUT LOW CURRENT represents the numerical range in which this parameter

will pass.

Note 8: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics, except as listed in the Post Radiation Limits Table —

if applicable. Radiation end point limits for the noted parameters are guaranteed only for the conditions, as specified.

5

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Test Circuit and Timing Waveforms

20163203

FIGURE 2. AC Load Test Circuit for TRI-STATE Outputs

20163204

FIGURE 3. Propagation Delay (Notes 1, 2)

20163205

FIGURE 4. Enable and Disable Times (Note 2)

Note 9: Diagram shown for Enable Low. Switches S1 and S2 open.

Note 10: S1 and S2 of Load Circuit are closed except where shown.

Note 11: Pulse Generator for all Pulses: Rate ≤ 1.0 MHz, Z = 50Ω, t ≤ 6.0 ns, t ≤ 6.0 ns.

O

r

f

Note 12: C includes probe and jig capacitance.

L

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6

Typical Application

20163206

FIGURE 5. Typical Application

7

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Revision History

Released

Revision

Section

Originator

Changes

03/01/06

A

New Release, Corporate format

L. Lytle

1 MDS data sheet converted into one Corp.

data sheet format. MNDS26F31M-X-RH Rev

0B0 will be archived.

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8

Physical Dimensions inches (millimeters) unless otherwise noted

20-Lead Ceramic Leadless Chip Carrier (E)

NS Package Number E20A

16-Lead Ceramic Dual-In-Line Package (J)

NS Package Number J16A

9

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Physical Dimensions inches (millimeters) unless otherwise noted (Continued)

16-Lead Ceramic Flatpak (W)

NS Package Number W16A

16-Lead Ceramic SOIC (WG)

NS Package Number WG16A

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10

Notes

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves

the right at any time without notice to change said circuitry and specifications.

For the most current product information visit us at www.national.com.

LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS

WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR

CORPORATION. As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body, or

(b) support or sustain life, and whose failure to perform when

properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to result

in a significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or

system, or to affect its safety or effectiveness.

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National Semiconductor manufactures products and uses packing materials that meet the provisions of the Customer Products

Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain

no ‘‘Banned Substances’’ as defined in CSP-9-111S2.

Leadfree products are RoHS compliant.

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型号：	DS26F31MQML
厂家：	National Semiconductor
描述：	Quad High Speed Differential Line Drivers 四路高速差分线路驱动器驱动器
文件：	总11页 (文件大小：646K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DS26F31MQML [NSC]

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DS26F31MWFQMLV

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DS26F31MWG/883

DS26F31MWGFQMLV

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DS26F32C

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DS26F32CJ/A+