DS8863 [NSC]

MOS-to-LED 8-Digit Driver; MOS至LED 8位驱动程序
DS8863
型号: DS8863
厂家: National Semiconductor    National Semiconductor
描述:

MOS-to-LED 8-Digit Driver
MOS至LED 8位驱动程序

驱动
文件: 总4页 (文件大小:97K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
June 1986  
DS8863/DS8963 MOS-to-LED 8-Digit Driver  
General Description  
The DS8863 and DS8963 are designed to be used in con-  
junction with MOS integrated circuits and common-cathode  
LED’s in serially addressed multi-digit displays.  
Features  
Y
500 mA sink capability per driver, DS8863, DS8963  
MOS compatibility (low input current)  
Low standby power  
Y
Y
Y
The DS8863 is an 8-digit driver. Each driver is capable of  
sinking up to 500 mA.  
High gain Darlington circuits  
The DS8963 is identical to the DS8863 except it is intended  
for operation at up to 18V.  
Schematic and Connection Diagrams  
TL/F/5839–1  
Dual-In-Line Package  
TL/F/5839–2  
Top View  
Order Number DS8863N or DS8963N  
See NS Package Number N18A  
C
1995 National Semiconductor Corporation  
TL/F/5839  
RRD-B30M105/Printed in U. S. A.  
Absolute Maximum Ratings  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales  
Office/Distributors for availability and specifications.  
DS8863  
DS8963  
Collector (Output) Current  
Each Collector (Output)  
All Collectors (Output)  
500 mA  
600 mA  
500 mA  
600 mA  
DS8863  
DS8963  
Continuous Total  
Dissipation  
Input Voltage Range  
(Note 1)  
800 mW  
800 mW  
b
b
5V to V  
5V to V  
SS  
SS  
Operating Temperature  
Range  
Collector (Output) Voltage  
(Note 2)  
a
a
0 C to 70 C 0 C to 70 C  
§
§
§
§
10V  
18V  
Storage Temperature  
Range  
Collector (Output)-to-Input  
Voltage  
b
a
65 C to 150 C  
§
§
10V  
18V  
Maximum Power Dissipation  
at 25 C  
Emitter-to-Ground Voltage  
t
§
Molded Package  
(V  
I
5V)  
²
²
1563 mW  
1563 mW  
Emitter-to-Input Voltage  
Lead Temperature  
(Soldering, 4 sec.)  
Voltage at V Terminal With  
SS  
Respect to Any Other  
Device Terminal  
260 C  
§
Derate molded package 12.5 mW/ C above 25 C.  
260 C  
§
²
§
§
10V  
18V  
e
e
10V, T  
A
a
0 C to 70 C unless otherwise noted  
Electrical Characteristics V  
§
§
SS  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
1.5  
1.6  
250  
250  
2
Units  
V
e
e
e
T 25 C  
A
V
OL  
Low Level Output Voltage  
V
V
V
7V, I  
500 mA  
§
IN  
OUT  
V
e
e
40 mA  
I
High Level Output Current  
10V*  
I
IN  
mA  
mA  
mA  
mA  
OH  
OH  
e
V
IN  
0.5V  
e
e
I
I
Input Current at Maximum Input Voltage  
Current into V Terminal  
10V, I  
OL  
20 mA  
I
IN  
1
SS  
SS  
*18V for the DS8963  
e
e
Switching Characteristics V  
7.5V, T  
25 C  
§
SS  
A
Symbol  
Parameter  
Conditions  
Min  
Typ  
300  
30  
Max  
Units  
ns  
e
e
20X,  
t
t
Propagation Delay Time, Low-to-High Level Output  
Propagation Delay Time, High-to-Low Level Output  
V
8V, R  
PLH  
IH  
L
e
C
15 pF  
L
ns  
PHL  
Note 1: The input is the only device terminal which may be negative with respect to ground.  
Note 2: Voltage values are with respect to network ground terminal unless otherwise noted.  
2
AC Test Circuits and Waveforms  
DS8863  
TL/F/5839–3  
TL/F/5839–4  
e
e
e
1ms.  
W
Note 1: The pulse generator has the following characteristics: Z  
50X, PRR  
100 KHz, t  
OUT  
Note 2: C includes probe and jig capacitance.  
L
3
Physical Dimensions inches (millimeters)  
Molded Dual-In-Line Package (N)  
Order Number DS8863N or DS8963N  
NS Package Number N18A  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL  
SEMICONDUCTOR CORPORATION. As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant  
into the body, or (b) support or sustain life, and whose  
failure to perform, when properly used in accordance  
with instructions for use provided in the labeling, can  
be reasonably expected to result in a significant injury  
to the user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
National Semiconductor  
Corporation  
National Semiconductor  
Europe  
National Semiconductor  
Hong Kong Ltd.  
National Semiconductor  
Japan Ltd.  
a
1111 West Bardin Road  
Arlington, TX 76017  
Tel: 1(800) 272-9959  
Fax: 1(800) 737-7018  
Fax:  
(
49) 0-180-530 85 86  
@
13th Floor, Straight Block,  
Ocean Centre, 5 Canton Rd.  
Tsimshatsui, Kowloon  
Hong Kong  
Tel: (852) 2737-1600  
Fax: (852) 2736-9960  
Tel: 81-043-299-2309  
Fax: 81-043-299-2408  
Email: cnjwge tevm2.nsc.com  
a
a
a
a
Deutsch Tel:  
English Tel:  
Fran3ais Tel:  
Italiano Tel:  
(
(
(
(
49) 0-180-530 85 85  
49) 0-180-532 78 32  
49) 0-180-532 93 58  
49) 0-180-534 16 80  
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.  

相关型号:

DS8863N

LED Display Driver
ETC

DS8863N/A+

LED Display Driver
ETC

DS8863N/B+

LED Display Driver
ETC

DS8866N

IC,LED DISPLAY DRIVER,COMMON-CATHODE,BIPOLAR,DIP,18PIN,PLASTIC
NSC

DS8867N

LED Display Driver
ETC

DS8868N/A+

LED Display Driver
ETC

DS8868N/B+

LED Display Driver
ETC

DS8869AJ

IC,LED DISPLAY DRIVER,6-SEG,COMMON-ANODE,BIPOLAR,DIP,16PIN,CERAMIC
TI

DS8869AJ/A+

LED Display Driver
ETC

DS8869AN

IC,LED DISPLAY DRIVER,6-SEG,COMMON-ANODE,BIPOLAR,DIP,16PIN,PLASTIC
NSC

DS8869AN

IC,LED DISPLAY DRIVER,6-SEG,COMMON-ANODE,BIPOLAR,DIP,16PIN,PLASTIC
TI

DS8869AN/A+

IC,LED DISPLAY DRIVER,6-SEG,COMMON-ANODE,BIPOLAR,DIP,16PIN,PLASTIC
TI