LM1596H [NSC]

Balanced Modulator-Demodulator; 平衡调制器,解调器
LM1596H
型号: LM1596H
厂家: National Semiconductor    National Semiconductor
描述:

Balanced Modulator-Demodulator
平衡调制器,解调器

文件: 总8页 (文件大小:167K)
中文:  中文翻译
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February 1995  
LM1596/LM1496 Balanced Modulator-Demodulator  
General Description  
Features  
Y
Excellent carrier suppression  
The LM1596/LM1496 are doubled balanced modulator-de-  
modulators which produce an output voltage proportional to  
the product of an input (signal) voltage and a switching (car-  
rier) signal. Typical applications include suppressed carrier  
modulation, amplitude modulation, synchronous detection,  
FM or PM detection, broadband frequency doubling and  
chopping.  
65 dB typical at 0.5 MHz  
50 dB typical at 10 MHz  
Y
Adjustable gain and signal handling  
Y
Fully balanced inputs and outputs  
Y
Low offset and drift  
Y
Wide frequency response up to 100 MHz  
b
The LM1596 is specified for operation over the 55 C to  
125 C military temperature range. The LM1496 is speci-  
§
a
§
a
fied for operation over the 0 C to 70 C temperature range.  
§
§
Schematic and Connection Diagrams  
Metal Can Package  
TL/H/7887–2  
Top View  
Note: Pin 10 is connected electrically to the  
case through the device substrate.  
Order Number LM1496H or LM1596H  
See NS Package Number H08C  
Dual-In-Line and Small Outline Packages  
TL/H/7887–1  
Numbers in parentheses show DIP connections.  
TL/H/7887–3  
Order Number LM1496M or LM1496N  
See NS Package Number M14A or N14A  
C
1995 National Semiconductor Corporation  
TL/H/7887  
RRD-B30M115/Printed in U. S. A.  
Absolute Maximum Ratings  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales  
Office/Distributors for availability and specifications.  
Soldering Information  
Dual-In-Line Package  
#
Soldering (10 seconds)  
260 C  
§
Internal Power Dissipation (Note 1)  
500 mW  
30V  
Small Outline Package  
#
Applied Voltage (Note 2)  
Vapor Phase (60 seconds)  
Infrared (15 seconds)  
215 C  
§
220 C  
§
b
g
5.0V  
Differential Input Signal (V  
Differential Input Signal (V  
V )  
8
7
b
a
(5 I R )V  
g
V )  
1
4
5
0
See AN-450 ‘‘Surface Mounting Methods and their effects  
on Product Reliability’’ for other methods of soldering sur-  
face mount devices.  
b
b
V )  
Input Signal (V  
V , V  
1
5.0V  
2
3
4
Bias Current (I )  
5
12 mA  
b
b
a
55 C to 125 C  
Operating Temperature Range LM1596  
LM1496  
§
0 C to 70 C  
§
a
§
65 C to 150 C  
§
a
Storage Temperature Range  
§
§
e
Electrical Characteristics (T  
25 C, unless otherwise specified, see test circuit)  
§
A
LM1596  
LM1496  
Parameter  
Conditions  
Units  
Min Typ Max Min Typ Max  
e
e
e
e
Carrier Feedthrough  
V
60 mVrms sine wave  
1.0 kHz, offset adjusted  
60 mVrms sine wave  
10 kHz, offset adjusted  
40  
40  
mVrms  
mVrms  
C
C
C
C
f
C
V
140  
140  
f
C
e
e
V
300 mV square wave  
pp  
1.0 kHz, offset adjusted  
0.04 0.2  
20 100  
0.04 0.2 mVrms  
20 150 mVrms  
f
C
e
e
V
300 mV square wave  
pp  
1.0 kHz, not offset adjusted  
f
C
e
e
e
e
Carrier Suppression  
f
S
f
C
f
S
f
C
10 kHz, 300 mVrms  
50  
65  
50  
50  
65  
50  
dB  
dB  
500 kHz, 60 mVrms sine wave offset adjusted  
10 kHz, 300 mVrms  
10 MHz, 60 mVrms sine wave offset adjusted  
e
Carrier Input Port, V  
Transadmittance Bandwidth  
R
L
50X  
300  
80  
300  
80  
MHz  
MHz  
e
1.0 kHz, 300 mVrms sine wave  
60 mVrms sine wave  
C
e
Signal Input Port, V  
f
S
e
300 mVrms sine wave  
S
b
e
0.5Vdc  
V
V
8
7
e
b
e
100 mVrms, f 1.0 kHz  
Voltage Gain, Signal Channel  
Input Resistance, Signal Port  
Input Capacitance, Signal Port  
Single Ended Output Resistance  
V
V
S
2.5 3.5  
200  
2.5 3.5  
200  
V/V  
e
V
8
0.5 Vdc  
7
e
b
f
5.0 MHz  
e
kX  
V
V
8
0.5 Vdc  
7
e
f
5.0 MHz  
2.0  
40  
2.0  
40  
pF  
kX  
pF  
b
e
0.5 Vdc  
V
V
8
7
e
e
f
f
10 MHz  
10 MHz  
Single Ended Output  
Capacitance  
5.0  
5.0  
a
Input Bias Current  
Input Bias Current  
Input Offset Current  
Input Offset Current  
(I  
(I  
(I  
(I  
I )/2  
4
12  
12  
25  
25  
12  
12  
30  
30  
mA  
mA  
mA  
mA  
1
a
I )/2  
8
7
1
7
b
b
I )  
4
0.7 5.0  
0.7 5.0  
2.0  
0.7 5.0  
5.0 5.0  
I )  
8
k
k
a
b
Average Temperature  
Coefficient of Input  
Offset Current  
(
55 C  
§
T
k
125 C)  
§
nA/ C  
§
nA/ C  
§
A
k
a
(0 C  
T
A
70 C)  
§
2.0  
§
b
Output Offset Current  
(I  
I )  
9
14  
90  
50  
14  
90  
60  
mA  
6
k
k
b
a
125 C)  
Average Temperature  
Coefficient of Output  
Offset Current  
(
55 C  
§
T
k
nA/ C  
§
nA/ C  
§
§
A
k
a
(0 C  
T
70 C)  
§
§
A
2
e
Electrical Characteristics (T  
25 C, unless otherwise specified, see test circuit) (Continued)  
§
A
LM1596  
Typ  
LM1496  
Typ  
Parameter  
Conditions  
Units  
Min  
Max  
Min  
Max  
e
1.0 kHz  
Signal Port Common Mode  
Input Voltage Range  
f
S
5.0  
5.0  
V
p-p  
b
e
0.5 Vdc  
Signal Port Common Mode  
Rejection Ratio  
V
7
V
8
b
b
85  
85  
dB  
Common Mode Quiescent  
Output Voltage  
8.0  
8.0  
Vdc  
Differential Output Swing  
Capability  
8.0  
8.0  
V
p-p  
a
Positive Supply Current  
Negative Supply Current  
Power Dissipation  
(I  
(I  
I )  
g
2.0  
3.0  
33  
3.0  
4.0  
2.0  
3.0  
33  
3.0  
4.0  
mA  
mA  
mW  
6
)
10  
a
Note 1: LM1596 rating applies to case temperatures to 125 C; derate linearly at 6.5 mW/ C for ambient temperature above 75 C. LM1496 rating applies to case  
§
§
§
a
temperatures to 70 C.  
§
Note 2: Voltage applied between pins 6-7, 8-1, 9-7, 9-8, 7-4, 7-1, 8-4, 6-8, 2-5, 3-5.  
Note 3: Refer to rets1596x drawing for specifications of military LM1596H versions.  
Typical Performance Characteristics  
Carrier Suppression vs  
Carrier Input Level  
Carrier Suppression vs  
Frequency  
Carrier Feedthrough vs  
Frequency  
TL/H/7887–5  
3
Typical Application and Test Circuit  
Suppressed Carrier Modulator  
ow DIP connections.  
TL/H/7887–4  
Note: S is closed for ‘‘adjusted’’ measurements.  
1
SSB Product Detector  
ections.  
TL/H/7887–6  
This figure shows the LM1596 used as a single sideband (SSB) suppressed carrier demodulator (product detector). The carrier signal is applied to the carrier input  
port with sufficient amplitude for switching operation. A carrier input level of 300 mVrms is optimum. The composite SSB signal is applied to the signal input port  
with an amplitude of 5.0 to 500 mVrms. All output signal components except the desired demodulated audio are filtered out, so that an offset adjustment is not  
required. This circuit may also be used as an AM detector by applying composite and carrier signals in the same manner as described for product detector  
operation.  
4
Typical Applications (Continued)  
Broadband Frequency Doubler  
ow DIP connections.  
TL/H/7887–7  
The frequency doubler circuit shown will double low-level signals with low distortion. The value of C should be chosen for low reactance at the operating frequency.  
Signal level at the carrier input must be less than 25 mV peak to maintain operation in the linear region of the switching differential amplifier. Levels to 50 mV peak  
may be used with some distortion of the output waveform. If a larger input signal is available a resistive divider may be used at the carrier input, with full signal  
applied to the signal input.  
5
6
Physical Dimensions inches (millimeters)  
Metal Can Package (H)  
Order Number LM1496H or LM1596H  
NS Package Number H08C  
Molded Small Outline Package (M)  
Order Number LM1496M  
NS Package Number M14A  
7
Physical Dimensions inches (millimeters) (Continued)  
Molded Dual-In-Line Package (N)  
Order Number LM1496N  
NS Package Number N14A  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL  
SEMICONDUCTOR CORPORATION. As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant  
into the body, or (b) support or sustain life, and whose  
failure to perform, when properly used in accordance  
with instructions for use provided in the labeling, can  
be reasonably expected to result in a significant injury  
to the user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
National Semiconductor  
Corporation  
National Semiconductor  
Europe  
National Semiconductor  
Hong Kong Ltd.  
National Semiconductor  
Japan Ltd.  
a
1111 West Bardin Road  
Arlington, TX 76017  
Tel: 1(800) 272-9959  
Fax: 1(800) 737-7018  
Fax:  
(
49) 0-180-530 85 86  
@
13th Floor, Straight Block,  
Ocean Centre, 5 Canton Rd.  
Tsimshatsui, Kowloon  
Hong Kong  
Tel: (852) 2737-1600  
Fax: (852) 2736-9960  
Tel: 81-043-299-2309  
Fax: 81-043-299-2408  
Email: cnjwge tevm2.nsc.com  
a
a
a
a
Deutsch Tel:  
English Tel:  
Fran3ais Tel:  
Italiano Tel:  
(
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(
49) 0-180-530 85 85  
49) 0-180-532 78 32  
49) 0-180-532 93 58  
49) 0-180-534 16 80  
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.  

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