LM2735YSDX/NOPB [NSC]

IC 3 A SWITCHING REGULATOR, 680 kHz SWITCHING FREQ-MAX, DSO6, LLP-6, Switching Regulator or Controller;
LM2735YSDX/NOPB
型号: LM2735YSDX/NOPB
厂家: National Semiconductor    National Semiconductor
描述:

IC 3 A SWITCHING REGULATOR, 680 kHz SWITCHING FREQ-MAX, DSO6, LLP-6, Switching Regulator or Controller

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February 3, 2009  
LM2735/LM2735Q  
520kHz/1.6MHz – Space-Efficient Boost and SEPIC DC-DC  
Regulator  
General Description  
Features  
The LM2735 is an easy-to-use, space-efficient 2.1A low-side  
switch regulator ideal for Boost and SEPIC DC-DC regulation.  
It provides all the active functions to provide local DC/DC  
conversion with fast-transient response and accurate regula-  
tion in the smallest PCB area. Switching frequency is inter-  
nally set to either 520kHz or 1.6MHz, allowing the use of  
extremely small surface mount inductor and chip capacitors  
while providing efficiencies up to 90%. Current-mode control  
and internal compensation provide ease-of-use, minimal  
component count, and high-performance regulation over a  
wide range of operating conditions. External shutdown fea-  
tures an ultra-low standby current of 80 nA ideal for portable  
applications. Tiny SOT23-5, LLP-6, and eMSOP-8 packages  
provide space-savings. Additional features include internal  
soft-start, circuitry to reduce inrush current, pulse-by-pulse  
current limit, and thermal shutdown.  
Input voltage range 2.7V to 5.5V  
Output voltage range 3V to 24V  
2.1A switch current over full temperature range  
Current-Mode control  
Logic high enable pin  
Ultra low standby current of 80 nA in shutdown  
170 mNMOS switch  
±2% feedback voltage accuracy  
Ease-of-use, small total solution size  
Internal soft-start  
Internal compensation  
Two switching frequencies  
520 kHz (LM2735-Y)  
1.6 MHz (LM2735-X)  
Uses small surface mount inductors and chip capacitors  
Tiny SOT23-5, LLP-6, and eMSOP-8 packages  
LM2735Q is AEC-Q100 Grade 1 qualified and is  
manufactured on an Automotive Grade Flow  
Applications  
LCD Display Backlighting For Portable Applications  
OLED Panel Power Supply  
USB Powered Devices  
Digital Still and Video Cameras  
White LED Current Source  
Automotive  
Typical Boost Application Circuit  
20215801  
Efficiency vs Load Current VO = 12202V15815  
© 2009 National Semiconductor Corporation  
202158  
www.national.com  
Connection Diagrams  
Top View  
Top View  
Top View  
20215803  
5-Pin SOT23  
20215804  
20215805  
6-Pin LLP  
8-Pin eMSOP  
Ordering Information  
Order Number  
Description  
Package Type  
Package  
Drawing  
Supplied As  
Features  
LM2735YMF  
LM2735YMFX  
LM2735YQMF  
LM2735YQMFX  
1000 units tape & reel  
3000 units tape & reel  
1000 units tape & reel  
3000 units tape & reel  
SOT23-5  
MF05A  
AEC-Q100 Grade 1  
qualified. Automotive  
Grade Production Flow*  
520kHz  
LM2735YSD  
LM2735YSDX  
LM2735YMY  
LM2735YMYX  
LM2735XMF  
1000 units tape & reel  
4500 units tape & reel  
1000 units tape & reel  
3500 units tape & reel  
1000 units tape & reel  
3000 units tape & reel  
1000 units tape & reel  
3000 units tape & reel  
LLP-6  
SDE06A  
MUY08A  
eMSOP-8  
LM2735XMFX  
LM2735XQMF  
LM2735XQMFX  
SOT23-5  
MF05A  
AEC-Q100 Grade 1  
qualified. Automotive  
Grade Production Flow*  
1.6MHz  
LM2735XSD  
LM2735XSDX  
LM2735XMY  
LM2735XMYX  
1000 units tape & reel  
4500 units tape & reel  
1000 units tape & reel  
3500 units tape & reel  
LLP-6  
SDE06A  
MUY08A  
eMSOP-8  
*Automotive Grade (Q) product incorporates enhanced manufacturing and support processes for the automotive market, including defect detection methodologies.  
Reliability qualification is compliant with the requirements and temperature grades defined in the AEC-Q100 standard. Automotive grade products are identified  
with the letter Q. For more information go to http://www.national.com/automotive.  
www.national.com  
2
Pin Descriptions - 5-Pin SOT23  
Pin  
Name Function  
1
SW  
GND  
FB  
Output switch. Connect to the inductor, output diode.  
Signal and power ground pin. Place the bottom resistor of the feedback network as close as possible to this  
pin.  
2
3
4
5
Feedback pin. Connect FB to external resistor divider to set output voltage.  
Shutdown control input. Logic high enables operation. Do not allow this pin to float or be greater than VIN +  
0.3V.  
EN  
VIN  
Supply voltage for power stage, and input supply voltage.  
Pin Descriptions - 6-Pin LLP  
Pin  
1
Name Function  
PGND Power ground pin. Place PGND and output capacitor GND close together.  
2
VIN  
Supply voltage for power stage, and input supply voltage.  
Shutdown control input. Logic high enables operation. Do not allow this pin to float or be greater than VIN +  
0.3V.  
3
4
EN  
FB  
Feedback pin. Connect FB to external resistor divider to set output voltage.  
Signal ground pin. Place the bottom resistor of the feedback network as close as possible to this pin & pin  
4.  
5
AGND  
SW  
6
Output switch. Connect to the inductor, output diode.  
Signal & Power ground. Connect to pin 1 & pin 5 on top layer. Place 4-6 vias from DAP to bottom layer GND  
plane.  
DAP  
GND  
Pin Descriptions - 8-Pin eMSOP  
Pin  
1
Name Function  
No Connect  
2
PGND Power ground pin. Place PGND and output capacitor GND close together.  
3
VIN  
EN  
FB  
Supply voltage for power stage, and input supply voltage.  
Shutdown control input. Logic high enables operation. Do not allow this pin to float or be greater than VIN +  
0.3V.  
4
5
6
7
8
Feedback pin. Connect FB to external resistor divider to set output voltage.  
AGND Signal ground pin. Place the bottom resistor of the feedback network as close as possible to this pin & pin 5  
SW  
Output switch. Connect to the inductor, output diode.  
No Connect  
Signal & Power ground. Connect to pin 2 & pin 6 on top layer. Place 4-6 vias from DAP to bottom layer GND  
plane.  
DAP  
GND  
3
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Soldering Information  
Infrared/Convection Reflow (15sec)  
Absolute Maximum Ratings (Note 1)  
220°C  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
Operating Ratings (Note 1)  
VIN  
2.7V to 5.5V  
3V to 24V  
VIN  
-0.5V to 7V  
-0.5V to 26.5V  
-0.5V to 3.0V  
-0.5V to 7.0V  
2kV  
VSW  
SW Voltage  
FB Voltage  
EN Voltage  
ESD Susceptibility (Note 4)  
Junction Temperature (Note 2)  
Storage Temp. Range  
VEN (Note 5)  
0V to VIN  
Junction Temperature Range  
Power Dissipation  
(Internal) SOT23-5  
−40°C to +125°C  
400 mW  
150°C  
-65°C to 150°C  
Electrical Characteristics Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the  
junction temperature range of (TJ = -40°C to 125°C). Minimum and Maximum limits are guaranteed through test, design, or statistical  
correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only.  
VIN = 5V unless otherwise indicated under the Conditions column.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
1.230 1.255 1.280  
1.236 1.255 1.274  
1.225 1.255 1.285  
1.229 1.255 1.281  
1.220 1.255 1.290  
1.230 1.255 1.280  
0.06  
−40°C to TJ +125°C (SOT23-5)  
0°C to TJ +125°C (SOT23-5)  
−40°C to TJ +125°C (LLP-6)  
−0°C to TJ +125°C (LLP-6)  
−40°C to TJ +125°C (eMSOP-8)  
VFB  
Feedback Voltage  
V
0°C to TJ +125°C (eMSOP-8)  
VIN = 2.7V to 5.5V  
Feedback Voltage Line Regulation  
Feedback Input Bias Current  
%/V  
µA  
ΔVFB/VIN  
IFB  
0.1  
1
LM2735-X  
1200 1600 2000  
kHz  
FSW  
DMAX  
Switching Frequency  
Maximum Duty Cycle  
Minimum Duty Cycle  
Switch On Resistance  
LM2735-Y  
360  
88  
520  
96  
99  
5
680  
LM2735-X  
%
%
LM2735-Y  
91  
LM2735-X  
DMIN  
LM2735-Y  
2
SOT23-5 and eMSOP-8  
LLP-6  
170  
190  
3
330  
350  
RDS(ON)  
mΩ  
ICL  
Switch Current Limit  
Soft Start  
2.1  
A
SS  
4
ms  
mA  
LM2735-X  
LM2735-Y  
All Options VEN = 0V  
VIN Rising  
VIN Falling  
(Note 5)  
7.0  
3.4  
80  
2.3  
1.9  
11  
7
Quiescent Current (switching)  
IQ  
Quiescent Current (shutdown)  
Undervoltage Lockout  
nA  
V
2.65  
0.4  
UVLO  
1.7  
1.8  
Shutdown Threshold Voltage  
Enable Threshold Voltage  
Switch Leakage  
VEN_TH  
V
(Note 5)  
I-SW  
I-EN  
VSW = 24V  
Sink/Source  
1.0  
µA  
nA  
Enable Pin Current  
100  
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4
Symbol  
Parameter  
Junction to Ambient  
0 LFPM Air Flow (Note 3)  
Conditions  
LLP-6 and eMSOP-8 Package  
SOT23-5 Package  
Min  
Typ  
80  
Max Units  
θJA  
°C/W  
118  
18  
LLP-6 and eMSOP-8 Package  
SOT23-5 Package  
θJC  
Junction to Case (Note 3)  
°C/W  
°C  
60  
TSD  
Thermal Shutdown Temperature (Note 2)  
Thermal Shutdown Hysteresis  
160  
10  
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is  
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see Electrical Characteristics.  
Note 2: Thermal shutdown will occur if the junction temperature exceeds the maximum junction temperature of the device  
Note 3: Applies for packages soldered directly onto a 3” x 3” PC board with 2oz. copper on 4 layers in still air.  
Note 4: The human body model is a 100 pF capacitor discharged through a 1.5 kresistor into each pin.  
Note 5: Do not allow this pin to float or be greater than VIN +0.3V.  
5
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Typical Performance Characteristics  
Current Limit vs Temperature  
FB Pin Voltage vs Temperature  
20215806  
20215807  
Oscillator Frequency vs Temperature - "X"  
Oscillator Frequency vs Temperature - "Y"  
20215808  
20215809  
Typical Maximum Output Current vs VIN  
RDSON vs Temperature  
20215810  
20215811  
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6
LM2735X Efficiency vs Load Current, Vo = 20V  
LM2735Y Efficiency vs Load Current, Vo = 20V  
20215812  
20215813  
LM2735X Efficiency vs Load Current, Vo = 12V  
LM2735Y Efficiency vs Load Current, Vo = 12V  
20215814  
20215815  
Output Voltage Load Regulation  
Output Voltage Line Regulation  
20215816  
20215817  
7
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Simplified Internal Block Diagram  
20215818  
FIGURE 1. Simplified Block Diagram  
at the falling edge of the reset pulse generated by the internal  
oscillator. When this pulse goes low, the output control logic  
turns on the internal NMOS control switch. During this on-  
time, the SW pin voltage (VSW) decreases to approximately  
GND, and the inductor current (IL) increases with a linear  
slope. IL is measured by the current sense amplifier, which  
generates an output proportional to the switch current. The  
sensed signal is summed with the regulator’s corrective ramp  
and compared to the error amplifier’s output, which is propor-  
tional to the difference between the feedback voltage and  
VREF. When the PWM comparator output goes high, the out-  
put switch turns off until the next switching cycle begins.  
During the switch off-time, inductor current discharges  
through diode D1, which forces the SW pin to swing to the  
output voltage plus the forward voltage (VD) of the diode. The  
regulator loop adjusts the duty cycle (D) to maintain a con-  
stant output voltage .  
Application Information  
THEORY OF OPERATION  
The LM2735 is a constant frequency PWM boost regulator IC  
that delivers a minimum of 2.1A peak switch current. The reg-  
ulator has a preset switching frequency of either 520 kHz or  
1.60 MHz. This high frequency allows the LM2735 to operate  
with small surface mount capacitors and inductors, resulting  
in a DC/DC converter that requires a minimum amount of  
board space. The LM2735 is internally compensated, so it is  
simple to use, and requires few external components. The  
LM2735 uses current-mode control to regulate the output  
voltage. The following operating description of the LM2735  
will refer to the Simplified Block Diagram (Figure 1) the sim-  
plified schematic (Figure 2), and its associated waveforms  
(Figure 3). The LM2735 supplies a regulated output voltage  
by switching the internal NMOS control switch at constant  
frequency and variable duty cycle. A switching cycle begins  
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8
20215819  
FIGURE 2. Simplified Schematic  
20215820  
FIGURE 3. Typical Waveforms  
9
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CURRENT LIMIT  
The LM2735 uses cycle-by-cycle current limiting to protect  
the internal NMOS switch. It is important to note that this cur-  
rent limit will not protect the output from excessive current  
during an output short circuit. The input supply is connected  
to the output by the series connection of an inductor and a  
diode. If a short circuit is placed on the output, excessive cur-  
rent can damage both the inductor and diode.  
20215824  
Design Guide  
FIGURE 4. Inductor Current  
ENABLE PIN / SHUTDOWN MODE  
The LM2735 has a shutdown mode that is controlled by the  
Enable pin (EN). When a logic low voltage is applied to EN,  
the part is in shutdown mode and its quiescent current drops  
to typically 80 nA. Switch leakage adds up to another 1 µA  
from the input supply. The voltage at this pin should never  
exceed VIN + 0.3V.  
THERMAL SHUTDOWN  
A good design practice is to design the inductor to produce  
10% to 30% ripple of maximum load. From the previous equa-  
tions, the inductor value is then obtained.  
Thermal shutdown limits total power dissipation by turning off  
the output switch when the IC junction temperature exceeds  
160°C. After thermal shutdown occurs, the output switch  
doesn’t turn on until the junction temperature drops to ap-  
proximately 150°C.  
SOFT-START  
This function forces VOUT to increase at a controlled rate dur-  
ing start up. During soft-start, the error amplifier’s reference  
voltage ramps to its nominal value of 1.255V in approximately  
4.0ms. This forces the regulator output to ramp up in a more  
linear and controlled fashion, which helps reduce inrush cur-  
rent.  
Where: 1/TS = FSW = switching frequency  
One must also ensure that the minimum current limit (2.1A)  
is not exceeded, so the peak current in the inductor must be  
calculated. The peak current (ILPK ) in the inductor is calcu-  
lated by:  
INDUCTOR SELECTION  
ILpk = IIN + ΔIL  
The Duty Cycle (D) can be approximated quickly using the  
ratio of output voltage (VO) to input voltage (VIN):  
or  
ILpk = IOUT / D' + ΔIL  
When selecting an inductor, make sure that it is capable of  
supporting the peak input current without saturating. Inductor  
saturation will result in a sudden reduction in inductance and  
prevent the regulator from operating correctly. Because of the  
speed of the internal current limit, the peak current of the in-  
ductor need only be specified for the required maximum input  
current. For example, if the designed maximum input current  
is 1.5A and the peak current is 1.75A, then the inductor should  
be specified with a saturation current limit of >1.75A. There is  
no need to specify the saturation or peak current of the in-  
ductor at the 3A typical switch current limit.  
Therefore:  
Power losses due to the diode (D1) forward voltage drop, the  
voltage drop across the internal NMOS switch, the voltage  
drop across the inductor resistance (RDCR) and switching  
losses must be included to calculate a more accurate duty  
cycle (See Calculating Efficiency and Junction Temperature  
for a detailed explanation). A more accurate formula for cal-  
culating the conversion ratio is:  
Because of the operating frequency of the LM2735, ferrite  
based inductors are preferred to minimize core losses. This  
presents little restriction since the variety of ferrite-based in-  
ductors is huge. Lastly, inductors with lower series resistance  
(DCR) will provide better operating efficiency. For recom-  
mended inductors see Example Circuits.  
INPUT CAPACITOR  
An input capacitor is necessary to ensure that VIN does not  
drop excessively during switching transients. The primary  
specifications of the input capacitor are capacitance, voltage,  
RMS current rating, and ESL (Equivalent Series Inductance).  
The recommended input capacitance is 10 µF to 44 µF de-  
pending on the application. The capacitor manufacturer  
specifically states the input voltage rating. Make sure to check  
any recommended deratings and also verify if there is any  
Where η equals the efficiency of the LM2735 application.  
The inductor value determines the input ripple current. Lower  
inductor values decrease the size of the inductor, but increase  
the input ripple current. An increase in the inductor value will  
decrease the input ripple current.  
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10  
significant change in capacitance at the operating input volt-  
age and the operating temperature. The ESL of an input  
capacitor is usually determined by the effective cross sec-  
tional area of the current path. At the operating frequencies  
of the LM2735, certain capacitors may have an ESL so large  
that the resulting impedance (2πfL) will be higher than that  
required to provide stable operation. As a result, surface  
mount capacitors are strongly recommended. Multilayer ce-  
ramic capacitors (MLCC) are good choices for both input and  
output capacitors and have very low ESL. For MLCCs it is  
recommended to use X7R or X5R dielectrics. Consult capac-  
itor manufacturer datasheet to see how rated capacitance  
varies over operating conditions.  
OUTPUT CAPACITOR  
20215829  
The LM2735 operates at frequencies allowing the use of ce-  
ramic output capacitors without compromising transient re-  
sponse. Ceramic capacitors allow higher inductor ripple  
without significantly increasing output ripple. The output ca-  
pacitor is selected based upon the desired output ripple and  
transient response. The initial current of a load transient is  
provided mainly by the output capacitor. The output  
impedance will therefore determine the maximum voltage  
perturbation. The output ripple of the converter is a function  
of the capacitor’s reactance and its equivalent series resis-  
tance (ESR):  
FIGURE 5. Setting Vout  
A good value for R1 is 10kΩ.  
COMPENSATION  
The LM2735 uses constant frequency peak current mode  
control. This mode of control allows for a simple external  
compensation scheme that can be optimized for each appli-  
cation. A complicated mathematical analysis can be complet-  
ed to fully explain the LM2735’s internal & external compen-  
sation, but for simplicity, a graphical approach with simple  
equations will be used. Below is a Gain & Phase plot of a  
LM2735 that produces a 12V output from a 5V input voltage.  
The Bode plot shows the total loop Gain & Phase without ex-  
ternal compensation.  
When using MLCCs, the ESR is typically so low that the ca-  
pacitive ripple may dominate. When this occurs, the output  
ripple will be approximately sinusoidal and 90° phase shifted  
from the switching action .  
Given the availability and quality of MLCCs and the expected  
output voltage of designs using the LM2735, there is really no  
need to review any other capacitor technologies. Another  
benefit of ceramic capacitors is their ability to bypass high  
frequency noise. A certain amount of switching edge noise  
will couple through parasitic capacitances in the inductor to  
the output. A ceramic capacitor will bypass this noise while a  
tantalum will not. Since the output capacitor is one of the two  
external components that control the stability of the regulator  
control loop, most applications will require a minimum at 4.7  
µF of output capacitance. Like the input capacitor, recom-  
mended multilayer ceramic capacitors are X7R or X5R.  
Again, verify actual capacitance at the desired operating volt-  
age and temperature.  
SETTING THE OUTPUT VOLTAGE  
The output voltage is set using the following equation where  
R1 is connected between the FB pin and GND, and R2 is  
connected between VOUT and the FB pin.  
20215831  
FIGURE 6. LM2735 Without External Compensation  
One can see that the Crossover frequency is fine, but the  
phase margin at 0dB is very low (22°). A zero can be placed  
just above the crossover frequency so that the phase margin  
will be bumped up to a minimum of 45°. Below is the same  
application with a zero added at 8 kHz.  
11  
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20215829  
FIGURE 8. Setting External Pole-Zero  
20215832  
FIGURE 7. LM2735 With External Compensation  
The simplest method to determine the compensation compo-  
nent value is as follows.  
There is an associated pole with the zero that was created in  
the above equation.  
Set the output voltage with the following equation.  
It is always higher in frequency than the zero.  
A right-half plane zero (RHPZ) is inherent to all boost con-  
verters. One must remember that the gain associated with a  
right-half plane zero increases at 20dB per decade, but the  
phase decreases by 45° per decade. For most applications  
there is little concern with the RHPZ due to the fact that the  
frequency at which it shows up is well beyond crossover, and  
has little to no effect on loop stability. One must be concerned  
with this condition for large inductor values and high output  
currents.  
Where R1 is the bottom resistor and R2 is the resistor tied to  
the output voltage. The next step is to calculate the value of  
C3. The internal compensation has been designed so that  
when a zero is added between 5 kHz & 10 kHz the converter  
will have good transient response with plenty of phase margin  
for all input & output voltage combinations.  
Lower output voltages will have the zero set closer to 10 kHz,  
and higher output voltages will usually have the zero set clos-  
er to 5 kHz. It is always recommended to obtain a Gain/Phase  
plot for your actual application. One could refer to the Typical  
applications section to obtain examples of working applica-  
tions and the associated component values.  
There are miscellaneous poles and zeros associated with  
parasitics internal to the LM2735, external components, and  
the PCB. They are located well over the crossover frequency,  
and for simplicity are not discussed.  
Pole @ origin due to internal gm amplifier:  
FP-ORIGIN  
PCB Layout Considerations  
Pole due to output load and capacitor:  
When planning layout there are a few things to consider when  
trying to achieve a clean, regulated output. The most impor-  
tant consideration when completing a Boost Converter layout  
is the close coupling of the GND connections of the COUT ca-  
pacitor and the LM2735 PGND pin. The GND ends should be  
close to one another and be connected to the GND plane with  
at least two through-holes. There should be a continuous  
ground plane on the bottom layer of a two-layer board except  
under the switching node island. The FB pin is a high  
impedance node and care should be taken to make the FB  
trace short to avoid noise pickup and inaccurate regulation.  
The feedback resistors should be placed as close as possible  
to the IC, with the AGND of R1 placed as close as possible to  
the GND (pin 5 for the LLP) of the IC. The VOUT trace to R2  
should be routed away from the inductor and any other traces  
that are switching. High AC currents flow through the VIN, SW  
This equation only determines the frequency of the pole for  
perfect current mode control (CMC). I.e, it doesn’t take into  
account the additional internal artificial ramp that is added to  
the current signal for stability reasons. By adding artificial  
ramp, you begin to move away from CMC to voltage mode  
control (VMC). The artifact is that the pole due to the output  
load and output capacitor will actually be slightly higher in fre-  
quency than calculated. In this example it is calculated at 650  
Hz, but in reality it is around 1 kHz.  
The zero created with capacitor C3 & resistor R2:  
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12  
and VOUT traces, so they should be as short and wide as pos-  
sible. However, making the traces wide increases radiated  
noise, so the designer must make this trade-off. Radiated  
noise can be decreased by choosing a shielded inductor. The  
remaining components should also be placed as close as  
possible to the IC. Please see Application Note AN-1229 for  
further considerations and the LM2735 demo board as an ex-  
ample of a four-layer layout.  
that are obtainable via the National Semiconductor website.  
The demonstration board consists of a two layer PCB with a  
common input and output voltage application. Most of the  
routing is on the top layer, with the bottom layer consisting of  
a large ground plane. The placement of the external compo-  
nents satisfies the electrical considerations, and the thermal  
performance has been improved by adding thermal vias and  
a top layer “Dog-Bone”.  
Below is an example of a good thermal & electrical PCB de-  
sign. This is very similar to our LM2735 demonstration boards  
13  
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Example of Proper PCB Layout  
guidelines). The electrical design considerations outweigh the  
thermal considerations. Other factors that influence thermal  
performance are thermal vias, copper weight, and number of  
board layers.  
Definitions  
Heat energy is transferred from regions of high temperature  
to regions of low temperature via three basic mechanisms:  
radiation, conduction and convection.  
Radiation: Electromagnetic transfer of heat between masses  
at different temperatures.  
Conduction: Transfer of heat through a solid medium.  
Convection: Transfer of heat through the medium of a fluid;  
typically air.  
Conduction & Convection will be the dominant heat transfer  
mechanism in most applications.  
RθJA: Thermal impedance from silicon junction to ambient air  
temperature.  
RθJC: Thermal impedance from silicon junction to device case  
temperature.  
20215840  
CθJC: Thermal Delay from silicon junction to device case tem-  
perature.  
FIGURE 9. Boost PCB Layout Guidelines  
CθCA: Thermal Delay from device case to ambient air tem-  
perature.  
Thermal Design  
When designing for thermal performance, one must consider  
many variables:  
RθJA  
& RθJC: These two symbols represent thermal  
impedances, and most data sheets contain associated values  
for these two symbols. The units of measurement are °C/  
Watt.  
Ambient Temperature: The surrounding maximum air tem-  
perature is fairly explanatory. As the temperature increases,  
the junction temperature will increase. This may not be linear  
though. As the surrounding air temperature increases, resis-  
tances of semiconductors, wires and traces increase. This will  
decrease the efficiency of the application, and more power  
will be converted into heat, and will increase the silicon junc-  
tion temperatures further.  
RθJA is the sum of smaller thermal impedances (see simplified  
thermal model below). The capacitors represent delays that  
are present from the time that power and its associated heat  
is increased or decreased from steady state in one medium  
until the time that the heat increase or decrease reaches  
steady state on the another medium.  
Forced Airflow: Forced air can drastically reduce the device  
junction temperature. Air flow reduces the hot spots within a  
design. Warm airflow is often much better than a lower am-  
bient temperature with no airflow.  
External Components: Choose components that are effi-  
cient, and you can reduce the mutual heating between de-  
vices.  
PCB design with thermal performance in mind:  
The PCB design is a very important step in the thermal design  
procedure. The LM2735 is available in three package options  
(5 pin SOT23, 8 pin eMSOP & 6 pin LLP). The options are  
electrically the same, but difference between the packages is  
size and thermal performance. The LLP and eMSOP have  
thermal Die Attach Pads (DAP) attached to the bottom of the  
packages, and are therefore capable of dissipating more heat  
than the SOT23 package. It is important that the customer  
choose the correct package for the application. A detailed  
thermal design procedure has been included in this data  
sheet. This procedure will help determine which package is  
correct, and common applications will be analyzed.  
20215841  
FIGURE 10. Simplified Thermal Impedance Model  
There is one significant thermal PCB layout design consider-  
ation that contradicts a proper electrical PCB layout design  
consideration. This contradiction is the placement of external  
components that dissipate heat. The greatest external heat  
contributor is the external Schottky diode. It would be nice if  
you were able to separate by distance the LM2735 from the  
Schottky diode, and thereby reducing the mutual heating ef-  
fect. This will however create electrical performance issues.  
It is important to keep the LM2735, the output capacitor, and  
Schottky diode physically close to each other (see PCB layout  
www.national.com  
14  
The datasheet values for these symbols are given so that one  
might compare the thermal performance of one package  
against another. In order to achieve a comparison between  
packages, all other variables must be held constant in the  
comparison (PCB size, copper weight, thermal vias, power  
dissipation, VIN, VOUT, Load Current etc). This does shed light  
on the package performance, but it would be a mistake to use  
these values to calculate the actual junction temperature in  
your application.  
RθJA [Variables]:  
Input Voltage, Output Voltage, Output Current, RDSon.  
Ambient temperature & air flow.  
Internal & External components power dissipation.  
Package thermal limitations.  
PCB variables (copper weight, thermal via’s, layers  
component placement).  
It would be wrong to assume that the top case temperature is  
the proper temperature when calculating value. The  
value represents the thermal impedance of all six sides  
of a package, not just the top side. This document will refer to  
a thermal impedance called  
.
represents a thermal  
impedance associated with just the top case temperature.  
This will allow one to calculate the junction temperature with  
a thermal sensor connected to the top case.  
We will talk more about calculating the variables of this equa-  
tion later, and how to eventually calculate a proper junction  
temperature with relative certainty. For now we need to define  
the process of calculating the junction temperature and clarify  
some common misconceptions.  
15  
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and loads. All loss elements will mutually increase the heat  
on the PCB, and therefore increase each other’s tempera-  
tures.  
LM2735 Thermal Models  
Heat is dissipated from the LM2735 and other devices. The  
external loss elements include the Schottky diode, inductor,  
20215843  
FIGURE 11. Thermal Schematic  
20215844  
FIGURE 12. Associated Thermal Model  
www.national.com  
16  
Calculating Efficiency, and Junction  
Temperature  
The complete LM2735 DC/DC converter efficiency (η) can be  
calculated in the following manner.  
The diode, NMOS switch, and inductor DCR losses are in-  
cluded in this calculation. Setting any loss element to zero will  
simplify the equation.  
VD is the forward voltage drop across the Schottky diode. It  
can be obtained from the manufacturer’s Electrical Charac-  
teristics section of the data sheet.  
The conduction losses in the diode are calculated as follows:  
PDIODE = VD x IO  
Depending on the duty cycle, this can be the single most sig-  
nificant power loss in the circuit. Care should be taken to  
choose a diode that has a low forward voltage drop. Another  
concern with diode selection is reverse leakage current. De-  
pending on the ambient temperature and the reverse voltage  
across the diode, the current being drawn from the output to  
the NMOS switch during time D could be significant, this may  
increase losses internal to the LM2735 and reduce the overall  
efficiency of the application. Refer to Schottky diode  
manufacturer’s data sheets for reverse leakage specifica-  
tions, and typical applications within this data sheet for diode  
selections.  
Power loss (PLOSS) is the sum of two types of losses in the  
converter, switching and conduction. Conduction losses usu-  
ally dominate at higher output loads, where as switching  
losses remain relatively fixed and dominate at lower output  
loads.  
Losses in the LM2735 Device: PLOSS = PCOND + PSW + PQ  
Conversion ratio of the Boost Converter with conduction loss  
elements inserted:  
Another significant external power loss is the conduction loss  
in the input inductor. The power loss within the inductor can  
be simplified to:  
2
PIND = IIN RDCR  
One can see that if the loss elements are reduced to zero, the  
conversion ratio simplifies to:  
The LM2735 conduction loss is mainly associated with the  
internal NFET:  
And we know:  
Therefore:  
PCOND-NFET = I2SW-rms x RDSON x D  
20215852  
FIGURE 13. LM2735 Switch Current  
Calculations for determining the most significant power loss-  
es are discussed below. Other losses totaling less than 2%  
are not discussed.  
A simple efficiency calculation that takes into account the  
conduction losses is shown below:  
(small ripple approximation)  
PCOND-NFET = IIN2 x RDSON x D  
17  
www.national.com  
PCONDUCTION = IIN2 x D x RDSON x 305 mW  
Diode Losses  
VD = 0.45V  
PDIODE = VD x IIN(1-D) = 236 mW  
The value for should be equal to the resistance at the junction  
temperature you wish to analyze. As an example, at 125°C  
and VIN = 5V, RDSON = 250 mΩ (See typical graphs for value).  
Inductor Power Losses  
RDCR = 75 mΩ  
Switching losses are also associated with the internal NMOS  
switch. They occur during the switch on and off transition pe-  
riods, where voltages and currents overlap resulting in power  
loss.  
PIND = IIN2 x RDCR = 145 mW  
Total Power Losses are:  
TABLE 2. Power Loss Tabulation  
5V  
The simplest means to determine this loss is to empirically  
measuring the rise and fall times (10% to 90%) of the switch  
at the switch node:  
VIN  
VOUT  
IOUT  
VD  
12V  
500mA  
0.4V  
POUT  
6W  
PSWR = 1/2(VOUT x IIN x FSW x TRISE  
)
PDIODE  
236mW  
PSWF = 1/2(VOUT x IIN x FSW x TFALL  
PSW = PSWR + PSWF  
)
FSW  
TRISE  
TFALL  
IQ  
1.6MHz  
6nS  
PSWR  
PSWF  
PQ  
80mW  
70mW  
20mW  
305mW  
145mW  
Typical Switch-Node Rise and Fall Times  
5nS  
VIN  
3V  
5V  
3V  
5V  
VOUT  
5V  
TRISE  
6nS  
6nS  
7nS  
7nS  
TFALL  
4nS  
5nS  
5nS  
5nS  
4mA  
RDSon  
RDCR  
D
PCOND  
PIND  
250mΩ  
75mΩ  
0.623  
86%  
12V  
12V  
18V  
PLOSS  
856mW  
η
Quiescent Power Losses  
IQ is the quiescent operating current, and is typically around  
4mA.  
PINTERNAL = PCOND + PSW = 475 mW  
PQ = IQ x VIN  
Calculating  
and  
Example Efficiency Calculation:  
TABLE 1. Operating Conditions  
VIN  
VOUT  
IOUT  
VD  
5V  
12V  
500mA  
0.4V  
FSW  
IQ  
1.60MHz  
4mA  
TRISE  
TFALL  
RDSon  
RDCR  
D
6nS  
We now know the internal power dissipation, and we are try-  
ing to keep the junction temperature at or below 125°C. The  
5nS  
next step is to calculate the value for  
and/or  
. This is  
250mΩ  
50mΩ  
0.64  
actually very simple to accomplish, and necessary if you think  
you may be marginal with regards to thermals or determining  
what package option is correct.  
IIN  
1.4A  
The LM2735 has a thermal shutdown comparator. When the  
silicon reaches a temperature of 160°C, the device shuts  
down until the temperature reduces to 150°C. Knowing this,  
ΣPCOND + PSW + PDIODE + PIND + PQ = PLOSS  
Quiescent Power Losses  
PQ = IQ x VIN = 20 mW  
Switching Power Losses  
one can calculate the  
or the  
of a specific application.  
Because the junction to top case thermal impedance is much  
lower than the thermal impedance of junction to ambient air,  
the error in calculating  
you will need to attach a small thermocouple onto the top case  
of the LM2735 to obtain the value.  
is lower than for  
. However,  
PSWR = 1/2(VOUT x IIN x FSW x TRISE) 6 ns 80 mW  
PSWF = 1/2(VOUT x IIN x FSW x TFALL) 5 ns 70 mW  
PSW = PSWR + PSWF = 150 mW  
Internal NFET Power Losses  
Knowing the temperature of the silicon when the device shuts  
down allows us to know three of the four variables. Once we  
calculate the thermal impedance, we then can work back-  
wards with the junction temperature set to 125°C to see what  
RDSON = 250 mΩ  
www.national.com  
18  
maximum ambient air temperature keeps the silicon below  
the 125°C temperature.  
Procedure:  
Place your application into a thermal chamber. You will need  
to dissipate enough power in the device so you can obtain a  
good thermal impedance value.  
Raise the ambient air temperature until the device goes into  
thermal shutdown. Record the temperatures of the ambient  
air and/or the top case temperature of the LM2735. Calculate  
the thermal impedances.  
Example from previous calculations:  
Pdiss = 475 mW  
Ta @ Shutdown = 139°C  
Tc @ Shutdown = 155°C  
20215856  
FIGURE 14. RθJA vs Internal Dissipation for the LLP-6  
and eMSOP-8 Package  
LLP = 55°C/W  
LLP = 21°C/W  
SEPIC Converter  
LLP & eMSOP typical applications will produce  
in the range of 50°C/W to 65°C/W, and will vary between  
numbers  
The LM2735 can easily be converted into a SEPIC converter.  
A SEPIC converter has the ability to regulate an output volt-  
age that is either larger or smaller in magnitude than the input  
voltage. Other converters have this ability as well (CUK and  
Buck-Boost), but usually create an output voltage that is op-  
posite in polarity to the input voltage. This topology is a perfect  
fit for Lithium Ion battery applications where the input voltage  
for a single cell Li-Ion battery will vary between 3V & 4.5V and  
the output voltage is somewhere in between. Most of the  
analysis of the LM2735 Boost Converter is applicable to the  
LM2735 SEPIC Converter.  
18°C/W and 28°C/W. These values are for PCB’s with two  
and four layer boards with 0.5 oz copper, and four to six ther-  
mal vias to bottom side ground plane under the DAP.  
For 5-pin SOT23 package typical applications, RθJA numbers  
will range from 80°C/W to 110°C/W, and  
will vary between  
50°C/W and 65°C/W. These values are for PCB’s with two &  
four layer boards with 0.5 oz copper, with two to four thermal  
vias from GND pin to bottom layer.  
Here is a good rule of thumb for typical thermal impedances,  
and an ambient temperature maximum of 75°C: If your design  
requires that you dissipate more than 400mW internal to the  
LM2735, or there is 750mW of total power loss in the appli-  
cation, it is recommended that you use the 6 pin LLP or the 8  
pin eMSOP package.  
SEPIC Design Guide:  
SEPIC Conversion ratio without loss elements:  
Note: To use these procedures it is important to dissipate an  
amount of power within the device that will indicate a true  
thermal impedance value. If one uses a very small internal  
dissipated value, one can see that the thermal impedance  
calculated is abnormally high, and subject to error. The graph  
below shows the nonlinear relationship of internal power dis-  
Therefore:  
sipation vs .  
.
Small ripple approximation:  
In a well-designed SEPIC converter, the output voltage, and  
input voltage ripple, the inductor ripple and is small in com-  
parison to the DC magnitude. Therefore it is a safe approxi-  
mation to assume a DC value for these components. The  
main objective of the Steady State Analysis is to determine  
the steady state duty-cycle, voltage and current stresses on  
all components, and proper values for all components.  
In a steady-state converter, the net volt-seconds across an  
inductor after one cycle will equal zero. Also, the charge into  
a capacitor will equal the charge out of a capacitor in one cy-  
cle.  
Therefore:  
19  
www.national.com  
Applying Charge balance on C1:  
Since there are no DC voltages across either inductor, and  
capacitor C6 is connected to Vin through L1 at one end, or to  
ground through L2 on the other end, we can say that  
Substituting IL1 into IL2  
VC1 = VIN  
Therefore:  
The average inductor current of L2 is the average output load.  
This verifies the original conversion ratio equation.  
It is important to remember that the internal switch current is  
equal to IL1 and IL2. During the D interval. Design the converter  
so that the minimum guaranteed peak switch current limit  
(2.1A) is not exceeded.  
20215863  
FIGURE 15. Inductor Volt-Sec Balance Waveform  
20215880  
FIGURE 16. SEPIC CONVERTER Schematic  
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20  
Steady State Analysis with Loss  
Elements  
20215866  
Using inductor volt-second balance & capacitor charge bal-  
ance, the following equations are derived:  
20215890  
Efficiencies for Typical SEPIC Application  
SEPIC Converter PCB Layout  
The layout guidelines described for the LM2735 Boost-Con-  
verter are applicable to the SEPIC Converter. Below is a  
proper PCB layout for a SEPIC Converter.  
Therefore:  
One can see that all variables are known except for the duty  
cycle (D). A quadratic equation is needed to solve for D. A  
less accurate method of determining the duty cycle is to as-  
sume efficiency, and calculate the duty cycle.  
20215872  
FIGURE 17. SEPIC PCB Layout  
21  
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LLP Package  
The LM2735 packaged in the 6–pin LLP:  
20215873  
FIGURE 18. Internal LLP Connection  
For certain high power applications, the PCB land may be  
modified to a "dog bone" shape (see Figure 19). Increasing  
the size of ground plane, and adding thermal vias can reduce  
the RθJA for the application.  
20215874  
FIGURE 19. PCB Dog Bone Layout  
www.national.com  
22  
LM2735X SOT23-5 Design Example 1  
20215875  
LM2735X (1.6MHz): Vin = 5V, Vout = 12V @ 350mA  
Part ID  
Part Value  
2.1A Boost Regulator  
22µF, 6.3V, X5R  
10µF, 25V, X5R  
330pF  
Manufacturer  
NSC  
Part Number  
LM2735XMF  
U1  
C1, Input Cap  
C2 Output Cap  
C3 Comp Cap  
D1, Catch Diode  
L1  
TDK  
C2012X5R0J226M  
C3216X5R1E106M  
C1608X5R1H331K  
STPS120M  
TDK  
TDK  
0.4Vf Schottky 1A, 20VR  
15µH 1.5A  
ST  
Coilcraft  
Vishay  
Vishay  
Vishay  
MSS5131-153ML  
CRCW06031022F  
CRCW06038662F  
CRCW06031003F  
R1  
10.2kΩ, 1%  
R2  
86.6kΩ, 1%  
R3  
100kΩ, 1%  
23  
www.national.com  
LM2735Y SOT23-5 Design Example 2  
20215875  
LM2735Y (520kHz): Vin = 5V, Vout = 12V @ 350mA  
Part ID  
Part Value  
2.1A Boost Regulator  
22µF, 6.3V, X5R  
10µF, 25V, X5R  
330pF  
Manufacturer  
NSC  
Part Number  
LM2735YMF  
U1  
C1, Input Cap  
C2 Output Cap  
C3 Comp Cap  
D1, Catch Diode  
L1  
TDK  
C2012X5R0J226M  
C3216X5R1E106M  
C1608X5R1H331K  
STPS120M  
TDK  
TDK  
0.4Vf Schottky 1A, 20VR  
33µH 1.5A  
ST  
Coilcraft  
Vishay  
Vishay  
Vishay  
DS3316P-333ML  
CRCW06031022F  
CRCW06038662F  
CRCW06031003F  
R1  
10.2kΩ, 1%  
R2  
86.6kΩ, 1%  
R3  
100kΩ, 1%  
www.national.com  
24  
LM2735X LLP-6 Design Example 3  
20215876  
LM2735X (1.6MHz): Vin = 3.3V, Vout = 12V @ 350mA  
Part ID  
U1  
Part Value  
2.1A Boost Regulator  
22µF, 6.3V, X5R  
No Load  
Manufacturer  
NSC  
Part Number  
LM2735XSD  
C1 Input Cap  
C2 Input Cap  
C3 Output Cap  
C4 Output Cap  
C5 Comp Cap  
D1, Catch Diode  
L1  
TDK  
C2012X5R0J226M  
10µF, 25V, X5R  
No Load  
TDK  
C3216X5R1E106M  
330pF  
TDK  
ST  
C1608X5R1H331K  
STPS120M  
0.4Vf Schottky 1A, 20VR  
6.8µH 2A  
Coilcraft  
Vishay  
Vishay  
Vishay  
DO1813H-682ML  
CRCW06031022F  
CRCW06038662F  
CRCW06031003F  
R1  
10.2kΩ, 1%  
R2  
86.6kΩ, 1%  
R3  
100kΩ, 1%  
25  
www.national.com  
LM2735Y LLP-6 Design Example 4  
20215876  
LM2735Y (520kHz): Vin = 3.3V, Vout = 12V @ 350mA  
Part ID  
U1  
Part Value  
2.1A Boost Regulator  
22µF, 6.3V, X5R  
No Load  
Manufacturer  
NSC  
Part Number  
LM2735YSD  
C1 Input Cap  
C2 Input Cap  
C3 Output Cap  
C4 Output Cap  
C5 Comp Cap  
D1, Catch Diode  
L1  
TDK  
C2012X5R0J226M  
10µF, 25V, X5R  
No Load  
TDK  
C3216X5R1E106M  
330pF  
TDK  
ST  
C1608X5R1H331K  
STPS120M  
0.4Vf Schottky 1A, 20VR  
15µH 2A  
Coilcraft  
Vishay  
Vishay  
Vishay  
MSS5131-153ML  
CRCW06031022F  
CRCW06038662F  
CRCW06031003F  
R1  
10.2kΩ, 1%  
R2  
86.6kΩ, 1%  
R3  
100kΩ, 1%  
www.national.com  
26  
LM2735Y eMSOP-8 Design Example 5  
20215877  
LM2735Y (520kHz): Vin = 3.3V, Vout = 12V @ 350mA  
Part ID  
U1  
Part Value  
2.1A Boost Regulator  
22µF, 6.3V, X5R  
No Load  
Manufacturer  
NSC  
Part Number  
LM2735YMY  
C1 Input Cap  
C2 Input Cap  
C3 Output Cap  
C4 Output Cap  
C5 Comp Cap  
D1, Catch Diode  
L1  
TDK  
C2012X5R0J226M  
10µF, 25V, X5R  
No Load  
TDK  
C3216X5R1E106M  
330pF  
TDK  
ST  
C1608X5R1H331K  
STPS120M  
0.4Vf Schottky 1A, 20VR  
15µH 1.5A  
Coilcraft  
Vishay  
Vishay  
Vishay  
MSS5131-153ML  
CRCW06031022F  
CRCW06038662F  
CRCW06031003F  
R1  
10.2kΩ, 1%  
R2  
86.6kΩ, 1%  
R3  
100kΩ, 1%  
27  
www.national.com  
LM2735X SOT23-5 Design Example 6  
20215878  
LM2735X (1.6MHz): Vin = 3V, Vout = 5V @ 500mA  
Part ID  
Part Value  
2.1A Boost Regulator  
10µF, 6.3V, X5R  
10µF, 6.3V, X5R  
1000pF  
Manufacturer  
NSC  
Part Number  
LM2735XMF  
U1  
C1, Input Cap  
C2, Output Cap  
C3 Comp Cap  
D1, Catch Diode  
L1  
TDK  
C2012X5R0J106K  
C2012X5R0J106K  
C1608X5R1H102K  
STPS120M  
TDK  
TDK  
0.4Vf Schottky 1A, 20VR  
10µH 1.2A  
ST  
Coilcraft  
Vishay  
Vishay  
Vishay  
DO1608C-103ML  
CRCW08051002F  
CRCW08053012F  
CRCW06031003F  
R1  
10.0kΩ, 1%  
R2  
30.1kΩ, 1%  
R3  
100kΩ, 1%  
www.national.com  
28  
LM2735Y SOT23-5 Design Example 7  
20215878  
LM2735Y (520kHz): Vin = 3V, Vout = 5V @ 750mA  
Part ID  
Part Value  
2.1A Boost Regulator  
22µF, 6.3V, X5R  
22µF, 6.3V, X5R  
1000pF  
Manufacturer  
NSC  
Part Number  
LM2735YMF  
U1  
C1 Input Cap  
C2 Output Cap  
C3 Comp Cap  
D1, Catch Diode  
L1  
TDK  
C2012X5R0J226M  
C2012X5R0J226M  
C1608X5R1H102K  
STPS120M  
TDK  
TDK  
0.4Vf Schottky 1A, 20VR  
22µH 1.2A  
ST  
Coilcraft  
Vishay  
Vishay  
Vishay  
MSS5131-223ML  
CRCW08051002F  
CRCW08053012F  
CRCW06031003F  
R1  
10.0kΩ, 1%  
R2  
30.1kΩ, 1%  
R3  
100kΩ, 1%  
29  
www.national.com  
LM2735X SOT23-5 Design Example 8  
20215879  
LM2735X (1.6MHz): Vin = 3.3V, Vout = 20V @ 100mA  
Part ID  
Part Value  
2.1A Boost Regulator  
22µF, 6.3V, X5R  
4.7µF, 25V, X5R  
470pF  
Manufacturer  
NSC  
Part Number  
LM2735XMF  
U1  
C1, Input Cap  
C2, Output Cap  
C3 Comp Cap  
D1, Catch Diode  
L1  
TDK  
C2012X5R0J226M  
C3216X5R1E475K  
C1608X5R1H471K  
MBR0530  
TDK  
TDK  
0.4Vf Schottky 500mA, 30VR  
10µH 1.2A  
Vishay  
Coilcraft  
Vishay  
Vishay  
Vishay  
DO1608C-103ML  
CRCW06031002F  
CRCW06031503F  
CRCW06031003F  
R1  
10.0kΩ, 1%  
R2  
150kΩ, 1%  
R3  
100kΩ, 1%  
www.national.com  
30  
LM2735Y SOT23-5 Design Example 9  
20215879  
LM2735Y (520kHz): Vin = 3.3V, Vout = 20V @ 100mA  
Part ID  
Part Value  
2.1A Boost Regulator  
22µF, 6.3V, X5R  
10µF, 25V, X5R  
470pF  
Manufacturer  
NSC  
Part Number  
LM2735YMF  
U1  
C1 Input Cap  
C2 Output Cap  
C3 Comp Cap  
D1, Catch Diode  
L1  
TDK  
C2012X5R0J226M  
C3216X5R1E106M  
C1608X5R1H471K  
MBR0530  
TDK  
TDK  
0.4Vf Schottky 500mA, 30VR  
33µH 1.5A  
Vishay  
Coilcraft  
Vishay  
Vishay  
Vishay  
DS3316P-333ML  
CRCW06031002F  
CRCW06031503F  
CRCW06031003F  
R1  
10.0kΩ, 1%  
R2  
150.0kΩ, 1%  
R3  
100kΩ, 1%  
31  
www.national.com  
LM2735X LLP-6 Design Example 10  
20215876  
LM2735X (1.6MHz): Vin = 3.3V, Vout = 20V @ 150mA  
Part ID  
U1  
Part Value  
2.1A Boost Regulator  
22µF, 6.3V, X5R  
22µF, 6.3V, X5R  
10µF, 25V, X5R  
No Load  
Manufacturer  
NSC  
Part Number  
LM2735XSD  
C1 Input Cap  
C2 Input Cap  
C3 Output Cap  
C4 Output Cap  
C5 Comp Cap  
D1, Catch Diode  
L1  
TDK  
C2012X5R0J226M  
C2012X5R0J226M  
C3216X5R1E106M  
TDK  
TDK  
470pF  
TDK  
Vishay  
Coilcraft  
Vishay  
Vishay  
Vishay  
C1608X5R1H471K  
MBR0530  
0.4Vf Schottky 500mA, 30VR  
8.2µH 2A  
DO1813H-822ML  
CRCW06031002F  
CRCW06031503F  
CRCW06031003F  
R1  
10.0kΩ, 1%  
R2  
150kΩ, 1%  
R3  
100kΩ, 1%  
www.national.com  
32  
LM2735Y LLP-6 Design Example 11  
20215876  
LM2735Y (520kHz): Vin = 3.3V, Vout = 20V @ 150mA  
Part ID  
U1  
Part Value  
2.1A Boost Regulator  
10µF, 6.3V, X5R  
10µF, 6.3V, X5R  
10µF, 25V, X5R  
No Load  
Manufacturer  
NSC  
Part Number  
LM2735YSD  
C1 Input Cap  
C2 Input Cap  
C3 Output Cap  
C4 Output Cap  
C5 Comp Cap  
D1, Catch Diode  
L1  
TDK  
C2012X5R0J106K  
C2012X5R0J106K  
C3216X5R1E106M  
TDK  
TDK  
470pF  
TDK  
Vishay  
Coilcraft  
Vishay  
Vishay  
Vishay  
C1608X5R1H471K  
MBR0530  
0.4Vf Schottky 500mA, 30VR  
22µH 1.5A  
DS3316P-223ML  
CRCW06031002F  
CRCW06031503F  
CRCW06031003F  
R1  
10.0kΩ, 1%  
R2  
150kΩ, 1%  
R3  
100kΩ, 1%  
33  
www.national.com  
LM2735X LLP-6 SEPIC Design Example 12  
20215880  
LM2735X (1.6MHz): Vin = 2.7V - 5V, Vout = 3.3V @ 500mA  
Part ID  
Part Value  
2.1A Boost Regulator  
22µF, 6.3V, X5R  
No Load  
Manufacturer  
NSC  
Part Number  
LM2735XSD  
U1  
C1 Input Cap  
TDK  
C2012X5R0J226M  
C2 Input Cap  
C3 Output Cap  
10µF, 25V, X5R  
No Load  
TDK  
C3216X5R1E106M  
C4 Output Cap  
C5 Comp Cap  
2200pF  
TDK  
TDK  
C1608X5R1H222K  
C2012X5R1C225K  
STPS120M  
C6  
2.2µF 16V  
D1, Catch Diode  
0.4Vf Schottky 1A, 20VR  
6.8µH  
ST  
L1  
L2  
Coilcraft  
Coilcraft  
Vishay  
Vishay  
Vishay  
DO1608C-682ML  
DO1608C-682ML  
CRCW06031002F  
CRCW06031652F  
CRCW06031003F  
6.8µH  
R1  
R2  
R3  
10.2kΩ, 1%  
16.5kΩ, 1%  
100kΩ, 1%  
www.national.com  
34  
LM2735Y eMSOP-8 SEPIC Design Example 13  
20215881  
LM2735Y (520kHz): Vin = 2.7V - 5V, Vout = 3.3V @ 500mA  
Part ID  
Part Value  
2.1A Boost Regulator  
22µF, 6.3V, X5R  
No Load  
Manufacturer  
NSC  
Part Number  
U1  
LM2735YMY  
C1 Input Cap  
TDK  
C2012X5R0J226M  
C2 Input Cap  
C3 Output Cap  
10µF, 25V, X5R  
No Load  
TDK  
C3216X5R1E106M  
C4 Output Cap  
C5 Comp Cap  
2200pF  
TDK  
TDK  
C1608X5R1H222K  
C2012X5R1C225K  
STPS120M  
C6  
2.2µF 16V  
D1, Catch Diode  
0.4Vf Schottky 1A, 20VR  
15µH 1.5A  
ST  
L1  
L2  
Coilcraft  
Coilcraft  
Vishay  
Vishay  
Vishay  
MSS5131-153ML  
MSS5131-153ML  
CRCW06031002F  
CRCW06031652F  
CRCW06031003F  
15µH 1.5A  
R1  
R2  
R3  
10.2kΩ, 1%  
16.5kΩ, 1%  
100kΩ, 1%  
35  
www.national.com  
LM2735X SOT23-5 LED Design Example 14  
20215882  
LM2735X (1.6MHz): Vin = 2.7V - 5V, Vout = 20V @ 50mA  
Part ID  
Part Value  
2.1A Boost Regulator  
22µF, 6.3V, X5R  
4.7µF, 25V, X5R  
0.4Vf Schottky 500mA, 30VR  
15µH 1.5A  
Manufacturer  
NSC  
Part Number  
LM2735XMF  
U1  
C1 Input Cap  
TDK  
C2012X5R0J226M  
C3216JB1E475K  
MBR0530  
C2 Output Cap  
TDK  
D1, Catch Diode  
Vishay  
Coilcraft  
Vishay  
Vishay  
Vishay  
L1  
R1  
R2  
R3  
MSS5131-153ML  
CRCW080525R5F  
CRCW08051000F  
CRCW06031003F  
25.5Ω, 1%  
100Ω, 1%  
100kΩ, 1%  
www.national.com  
36  
LM2735Y LLP-6 FlyBack Design Example 15  
20215883  
LM2735Y (520kHz): Vin = 5V, Vout = ±12V 150mA  
Part ID  
Part Value  
2.1A Boost Regulator  
22µF, 6.3V, X5R  
10µF, 25V, X5R  
Manufacturer  
NSC  
Part Number  
U1  
C1 Input Cap  
C2 Output Cap  
C3 Output Cap  
Cf Comp Cap  
D1, D2 Catch Diode  
T1  
LM2735YSD  
C2012X5R0J226M  
C3216X5R1E106M  
C3216X5R1E106M  
C1608X5R1H331K  
MBR0530  
TDK  
TDK  
10µF, 25V, X5R  
TDK  
330pF  
TDK  
0.4Vf Schottky 500mA, 30VR  
Vishay  
R1  
Vishay  
Vishay  
Vishay  
CRCW06031002F  
CRCW06038662F  
CRCW06031003F  
10.0kΩ, 1%  
86.6kΩ, 1%  
100kΩ, 1%  
R2  
R3  
37  
www.national.com  
LM2735X SOT23-5 LED Design Example 16  
VRAIL > 5.5V Application  
202158a3  
LM2735X (1.6MHz): VPWR = 9V, Vout = 12V @ 500mA  
Part ID  
Part Value  
2.1A Boost Regulator  
10µF, 6.3V, X5R  
10µF, 25V, X5R  
0.1µF, 6.3V, X5R  
1000pF  
Manufacturer  
NSC  
Part Number  
LM2735XMF  
U1  
C1, Input Cap  
TDK  
C2012X5R0J106K  
C3216X5R1E106M  
C2012X5R0J104K  
C1608X5R1H102K  
STPS120M  
C2, Output Cap  
TDK  
C3 VIN Cap  
TDK  
C4 Comp Cap  
TDK  
D1, Catch Diode  
0.4Vf Schottky 1A, 20VR  
3.3V Zener, SOT23  
6.8µH 2A  
ST  
D2  
L1  
Diodes Inc  
Coilcraft  
Vishay  
Vishay  
Vishay  
Vishay  
BZX84C3V3  
DO1813H-682ML  
CRCW08051002F  
CRCW08058662F  
CRCW06031003F  
CRCW06034991F  
R1  
R2  
R3  
R4  
10.0kΩ, 1%  
86.6kΩ, 1%  
100kΩ, 1%  
499Ω, 1%  
www.national.com  
38  
LM2735X SOT23-5 LED Design Example 17  
Two Input Voltage Rail Application  
202158a4  
LM2735X (1.6MHz): VPWR = 9V in = 2.7V - 5.5V, Vout = 12V @ 500mA  
Part ID  
U1  
Part Value  
2.1A Boost Regulator  
10µF, 6.3V, X5R  
10µF, 25V, X5R  
0.1µF, 6.3V, X5R  
1000pF  
Manufacturer  
NSC  
Part Number  
LM2735XMF  
C1, Input Cap  
C2, Output Cap  
C3 VIN Cap  
C4 Comp Cap  
D1, Catch Diode  
L1  
TDK  
C2012X5R0J106K  
C3216X5R1E106M  
C2012X5R0J104K  
C1608X5R1H102K  
STPS120M  
TDK  
TDK  
TDK  
0.4Vf Schottky 1A, 20VR  
6.8µH 2A  
ST  
Coilcraft  
Vishay  
Vishay  
Vishay  
DO1813H-682ML  
CRCW08051002F  
CRCW08058662F  
CRCW06031003F  
R1  
10.0kΩ, 1%  
R2  
86.6kΩ, 1%  
R3  
100kΩ, 1%  
39  
www.national.com  
Physical Dimensions inches (millimeters) unless otherwise noted  
6-Lead LLP Package  
NS Package Number SDE06A  
5-Lead SOT23-5 Package  
NS Package Number MF05A  
www.national.com  
40  
8-Lead eMSOP Package  
NS Package Number MUY08A  
41  
www.national.com  
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