LM4050AIM3X-4.1 [NSC]
Precision Micropower Shunt Voltage Reference; 精密微功耗并联型电压基准
| 型号： | LM4050AIM3X-4.1 |
| 厂家： | 
National Semiconductor |
| 描述： | Precision Micropower Shunt Voltage Reference |
| 文件： | 总14页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2000
LM4050
Precision Micropower Shunt Voltage Reference
General Description
Features
n Small packages: SSOT-23
n No output capacitor required
n Tolerates capacitive loads
Ideal for space critical applications, the LM4050 precision
voltage reference is available in the sub-miniature (3 mm x
1.3 mm) SSOT-23 surface-mount package. The LM4050’s
design eliminates the need for an external stabilizing capaci-
tor while ensuring stability with any capacitive load, thus
making the LM4050 easy to use. Further reducing design ef-
fort is the availability of several fixed reverse breakdown volt-
ages: 2.500V, 4.096V, 5.000V, 8.192V, and 10.000V. The
minimum operating current increases from 60 µA for the
LM4050-2.5 to 100 µA for the LM4050-10.0. All versions
have a maximum operating current of 15 mA.
n Fixed reverse breakdown voltages of 2.500V, 4.096V,
5.000V, 8.192V, and 10.000V
Key Specifications (LM4050-2.5)
n Output voltage tolerance
(A grade, 25˚C)
±
0.1% (max)
n Low output noise
(10 Hz to 10 kHz)
The LM4050 utilizes fuse and zener-zap reverse breakdown
voltage trim during wafer sort to ensure that the prime parts
41 µVrms(typ)
60 µA to 15 mA
−40˚C to +85˚C
−40˚C to +125˚C
50 ppm/˚C (max)
n Wide operating current range
n Industrial temperature range
n Extended temperature range
n Low temperature coefficient
±
have an accuracy of better than 0.1% (A grade) at 25˚C.
Bandgap reference temperature drift curvature correction
and low dynamic impedance ensure stable reverse break-
down voltage accuracy over a wide range of operating tem-
peratures and currents.
All grades and voltage options of the LM4050 operate be-
tween −40˚C and +85˚C. Selected parts can operate in the
extended temperature range, from −40˚C and +125˚C.
Applications
n Portable, Battery-Powered Equipment
n Data Acquisition Systems
n Instrumentation
n Process Control
n Energy Management
n Product Testing
n Automotive
n Precision Audio Components
Connection Diagrams
SSOT-23
DS101045-1
*This pin must be left floating or connected to pin 2.
Top View
See NS Package Number MF03A
© 2000 National Semiconductor Corporation
DS101045
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Ordering Information
Industrial Temperature Range (−40 ˚C to +85 ˚C)
Reverse Breakdown
Voltage Tolerance at 25˚C and Average
Reverse Breakdown
LM4050 Supplied as 1000 Units,
Tape and Reel
LM4050 Supplied as 3000 Units,
Tape and Reel
Voltage Temperature Coefficient
LM4050AIM3-2.5
LM4050AIM3-4.1
LM4050AIM3-5.0
LM4050AIM3-8.2
LM4050AIM3-10
LM4050BIM3-2.5
LM4050BIM3-4.1
LM4050BIM3-5.0
LM4050BIM3-8.2
LM4050BIM3-10
LM4050CIM3-2.5
LM4050CIM3-4.1
LM4050CIM3-5.0
LM4050CIM3-8.2
LM4050CIM3-10
LM4050AIM3X-2.5
LM4050AIM3X-4.1
LM4050AIM3X-5.0
LM4050AIM3X-8.2
LM4050AIM3X-10
LM4050BIM3X-2.5
LM4050BIM3X-4.1
LM4050BIM3X-5.0
LM4050BIM3X-8.2
LM4050BIM3X-10
LM4050CIM3X-2.5
LM4050CIM3X-4.1
LM4050CIM3X-5.0
LM4050CIM3X-8.2
LM4050CIM3X-10
±
±
±
0.1%, 50 ppm/˚C max (A grade)
0.2%, 50 ppm/˚C max (B grade)
0.5%, 50 ppm/˚C max (C grade)
Extended Temperature Range (−40 ˚C to +125 ˚C)
Reverse Breakdown
Voltage Tolerance at 25˚C and Average
Reverse Breakdown
LM4050 Supplied as 1000 Units,
Tape and Reel
LM4050 Supplied as 3000 Units,
Tape and Reel
Voltage Temperature Coefficient
±
0.5%, 50 ppm/˚C max (C grade)
LM4050CEM3-2.5
LM4050CEM3X-2.5
SSOT-23 Package Marking Information
Only three fields of marking are possible on the SSOT-23’s small surface. This table gives the meaning of the three fields.
Part Marking
RCA
Field Definition
First Field:
RDA
R = Reference
REA
Second Field:
RFA
C = 2.500V Voltage Option
D = 4.096V Voltage Option
E = 5.000V Voltage Option
F = 8.192V Voltage Option
G = 10.000V Voltage Option
RGA
RCB
RDB
REB
RFB
RGB
RCC
RDC
REC
Third Field:
A–C = Initial Reverse Breakdown Voltage or Reference Voltage Tolerance
±
±
A = 0.1%, B = 0.2%, C = +0.5%,
RFC
RGC
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2
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Machine Model (Note 4)
200V
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
Reverse Current
20 mA
10 mA
Operating Ratings(Notes 1, 3)
Forward Current
Temperature Range
Industrial Temperature Range
Extended temperature Range
Reverse Current
LM4050-2.5
(Tmin ≤ TA ≤ Tmax)
Power Dissipation (TA = 25˚C) (Note 3)
M3 Package
−40˚C ≤ TA ≤ +85˚C
−40˚C ≤ TA ≤ +125˚C
280 mW
Storage Temperature (Note 2)
Lead Temperature
−65˚C to +150˚C
60 µA to 15 mA
68 µA to 15 mA
74 µA to 15 mA
91 µA to 15 mA
100 µA to 15 mA
M3 Package
LM4050-4.1
Vapor phase (60 seconds)
Infrared (15 seconds)
ESD Susceptibility
+215˚C
+220˚C
LM4050-5.0
LM4050-8.2
LM4050-10.0
Human Body Model (Note 4)
2 kV
LM4050-2.5
Electrical Characteristics
Boldface limits apply for TA = TJ = TMIN to TMAX; all other limits TA = TJ = 25˚C. The grades A, B and C designate initial Re-
±
±
verse Breakdown Voltage tolerances of 0.1%, 0.2%, and 0.5% respectively.
Symbol
Parameter
Conditions
Typical LM4050AIM3 LM4050BIM3 LM4050CIM3
Units
(Limit)
(Note 5)
Limits
(Note 6)
Limits
(Note 6)
LM4050CEM3
Limits
(Note 6)
Reverse Breakdown
Voltage
IR = 100 µA
2.500
V
VR
±
±
±
Reverse Breakdown
Voltage Tolerance (Note 7)
IR = 100 µA
2.5
5.0
13
mV (max)
mV (max)
Industrial Temp. Range
Devices
±
±
±
11
14
21
Extended Temp. Range
Devices
±
25
mV (max)
µA
IRMIN
Minimum Operating Current
41
60
65
60
65
60
65
µA (max)
µA (max)
ppm/˚C
±
±
±
∆VR/∆T Average Reverse
Breakdown Voltage
Temperature Coefficient
(Note 7)
IR = 10 mA
20
15
15
IR = 1 mA
ppm/˚C
ppm/˚C (max)
mV
±
±
±
50
IR = 100 µA
IRMIN ≤ IR ≤ 1 mA
50
50
∆VR/∆IR Reverse Breakdown
Voltage Change with
Operating Current Change
(Note 8)
0.3
0.8
0.8
0.8
mV (max)
mV (max)
1.2
1.2
1.2
1 mA ≤ IR ≤ 15 mA
2.3
mV
mV (max)
mV (max)
Ω
6.0
6.0
6.0
8.0
8.0
8.0
ZR
Reverse Dynamic
Impedance
IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR
0.3
41
eN
Wideband Noise
IR = 100 µA
µVrms
10 Hz ≤ f ≤ 10 kHz
∆VR
Reverse Breakdown
t = 1000 hrs
±
Voltage Long Term Stability T = 25˚C 0.1˚C
120
0.7
ppm
mV
IR = 100 µA
VHYST Output Hysteresis
∆T = −40˚C to 125˚C
3
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LM4050-4.1
Electrical Characteristics (Industrial Temperature Range)
Boldface limits apply for TA = TJ = TMIN to TMAX; all other limits TA = TJ = 25˚C. The grades A, B and C designate initial Re-
±
±
verse Breakdown Voltage tolerances of 0.1%, 0.2%, and 0.5% respectively.
LM4050AIM3 LM4050BIM3 LM4050CIM3
Typical
Units
Symbol
Parameter
Conditions
(Note 5)
(Limit)
Limits
Limits
Limits
(Note 6)
(Note 6)
(Note 6)
VR
Reverse Breakdown
Voltage
IR = 100 µA
4.096
52
V
±
±
±
Reverse Breakdown
Voltage Tolerance (Note 7)
IR = 100 µA
4.1
8.2
21
mV (max)
mV (max)
µA
±
±
±
18
22
34
IRMIN
Minimum Operating Current
68
73
68
73
68
73
µA (max)
µA (max)
ppm/˚C
±
±
±
∆VR/∆T Average Reverse
Breakdown Voltage
Temperature
IR = 10 mA
30
20
20
IR = 1 mA
ppm/˚C
±
±
±
50
IR = 100 µA
IRMIN ≤ IR ≤ 1 mA
50
50
ppm/˚C (max)
Coefficient(Note 7)
∆VR/∆IR Reverse Breakdown
Voltage Change with
Operating Current Change
(Note 8)
0.2
mV
0.9
0.9
0.9
mV (max)
mV (max)
mV
1.2
1.2
1.2
1 mA ≤ IR ≤ 15 mA
2.0
7.0
7.0
7.0
mV (max)
mV (max)
Ω
10.0
10.0
10.0
ZR
Reverse Dynamic
Impedance
IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR
0.5
93
eN
Wideband Noise
IR = 100 µA
µVrms
ppm
10 Hz ≤ f ≤ 10 kHz
t = 1000 hrs
∆VR
Reverse Breakdown
120
±
Voltage Long Term Stability T = 25˚C 0.1˚C
IR = 100 µA
VHYST Output Hysteresis
∆T = −40˚C to 125˚C
1.148
mV
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4
LM4050-5.0
Electrical Characteristics (Industrial Temperature Range)
Boldface limits apply for TA = TJ = TMIN to TMAX; all other limits TA = TJ = 25˚C. The grades A, B and C designate initial Re-
±
±
verse Breakdown Voltage tolerances of 0.1%, 0.2% and 0.5% respectively.
LM4050AIM3 LM4050BIM3 LM4050CIM3
Typical
(Note 5)
Units
(Limit)
Symbol
Parameter
Conditions
Limits
Limits
Limits
(Note 6)
(Note 6)
(Note 6)
VR
Reverse Breakdown
Voltage
IR = 100 µA
5.000
56
V
±
±
±
Reverse Breakdown
Voltage Tolerance (Note 7)
IR = 100 µA
5.0
10
25
mV (max)
mV (max)
µA
±
±
±
22
27
42
IRMIN Minimum Operating Current
74
80
74
80
74
80
µA (max)
µA (max)
ppm/˚C
±
±
±
∆VR/∆T Average Reverse
Breakdown Voltage
Temperature Coefficient
(Note 7)
IR = 10 mA
30
20
20
IR = 1 mA
ppm/˚C
ppm/˚C (max)
mV
±
±
±
50
IR = 100 µA
IRMIN ≤ IR ≤ 1 mA
50
50
∆VR/∆IR Reverse Breakdown
Voltage Change with
Operating Current Change
(Note 8)
0.2
1.0
1.0
1.0
mV (max)
mV (max)
1.4
1.4
1.4
1 mA ≤ IR ≤ 15 mA
2.0
mV
mV (max)
mV (max)
Ω
8.0
8.0
8.0
12.0
12.0
12.0
ZR
Reverse Dynamic
Impedance
IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR
0.5
93
Ω (max)
µVrms
eN
Wideband Noise
IR = 100 µA
10 Hz ≤ f ≤ 10 kHz
t = 1000 hrs
∆VR
Reverse Breakdown
Voltage Long Term Stability
±
T = 25˚C 0.1˚C
120
1.4
ppm
mV
IR = 100 µA
VHYST Output Hysteresis
∆T = −40˚C to 125˚C
5
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LM4050-8.2
Electrical Characteristics (Industrial Temperature Range)
Boldface limits apply for TA = TJ = TMIN to TMAX; all other limits TA = TJ = 25˚C. The grades A, B and C designate initial Re-
±
±
verse Breakdown Voltage tolerances of 0.1% and 0.2% and 0.5% respectively.
LM4050AIM3 LM4050BIM3 LM4050CIM3
Typical
Units
Symbol
Parameter
Conditions
(Note 5)
(Limit)
Limits
Limits
Limits
(Note 6)
(Note 6)
(Note 6)
VR
Reverse Breakdown
Voltage
IR = 150 µA
8.192
74
V
±
±
±
Reverse Breakdown
Voltage Tolerance (Note 7)
IR = 150 µA
8.2
16
41
mV (max)
mV (max)
µA
±
±
±
35
43
68
IRMIN
Minimum Operating Current
91
95
91
95
91
95
µA (max)
µA (max)
ppm/˚C
ppm/˚C
±
±
±
∆VR/∆T Average Reverse
Breakdown Voltage
Temperature
IR = 10 mA
IR = 1 mA
40
20
20
±
±
±
50
IR = 150 µA
50
50
ppm/˚C
(max)
Coefficient(Note 7)
∆VR/∆IR Reverse Breakdown
Voltage Change with
Operating Current Change
(Note 8)
IRMIN ≤ IR ≤ 1 mA
0.6
mV
1.3
1.3
1.3
mV (max)
mV (max)
2.5
2.5
2.5
1 mA ≤ IR ≤ 15 mA
7.0
mV
mV (max)
mV (max)
Ω
10.0
10.0
10.0
18.0
18.0
18.0
ZR
Reverse Dynamic
Impedance
IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR
0.6
eN
Wideband Noise
IR = 150 µA
150
µVrms
10 Hz ≤ f ≤ 10 kHz
t = 1000 hrs
∆VR
Reverse Breakdown
Voltage Long Term Stability
±
T = 25˚C 0.1˚C
120
2.3
ppm
mV
IR = 150 µA
VHYST Output Hysteresis
∆T = −40˚C to 125˚C
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6
LM4050-10.0
Electrical Characteristics (Industrial Temperature Range)
Boldface limits apply for TA = TJ = TMIN to TMAX; all other limits TA = TJ = 25˚C. The grades A, B and C designate initial Re-
±
±
verse Breakdown Voltage tolerances of 0.1% and 0.2% and 0.5% respectively.
LM4050AIM3 LM4050BIM3 LM4050CIM3
Typical
Units
Symbol
Parameter
Conditions
(Note 5)
(Limit)
Limits
Limits
Limits
(Note 6)
(Note 6)
(Note 6)
VR
Reverse Breakdown
Voltage
IR = 150 µA
10.00
80
V
±
±
±
Reverse Breakdown
Voltage Tolerance (Note 7)
IR = 150 µA
10
20
50
mV (max)
mV (max)
µA
±
±
±
43
53
83
IRMIN
Minimum Operating Current
100
100
100
µA (max)
µA (max)
ppm/˚C
ppm/˚C
103
103
103
±
±
±
∆VR/∆T Average Reverse
Breakdown Voltage
Temperature Coefficient
(Note 7)
IR = 10 mA
IR = 1 mA
40
20
20
±
±
±
50
IR = 150 µA
50
50
ppm/˚C
(max)
∆VR/∆IR Reverse Breakdown
Voltage Change with
Operating Current Change
(Note 8)
IRMIN ≤ IR ≤ 1 mA
0.8
mV
1.5
1.5
1.5
mV (max)
mV (max)
3.5
3.5
3.5
1 mA ≤ IR ≤ 15 mA
8.0
mV
mV (max)
mV (max)
Ω
12.0
12.0
12.0
23.0
23.0
23.0
ZR
Reverse Dynamic
Impedance
IR = 1 mA, f = 120 Hz,
IAC = 0.1 IR
0.7
eN
Wideband Noise
IR = 150 µA
150
µVrms
10 Hz ≤ f ≤ 10 kHz
t = 1000 hrs
∆VR
Reverse Breakdown
Voltage Long Term Stability
±
T = 25˚C 0.1˚C
120
2.8
ppm
mV
IR = 150 µA
VHYST Output Hysteresis
∆T = −40˚C to 125˚C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed speci-
fications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.
Note 2: If parts are exposed to temperatures outside the specific operating temperature range, the output may shift due to hysteresis.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by T
(maximum junction temperature), θ (junction to am-
JA
Jmax
bient thermal resistance), and T (ambient temperature). The maximum allowable power dissipation at any temperature is PD
= (T
− T )/θ or the number
Jmax A JA
A
max
given in the Absolute Maximum Ratings, whichever is lower. For the LM4050, T
326˚C/W for the SSOT-23 package.
= 125˚C, and the typical thermal resistance (θ ), when board mounted, is
JA
Jmax
Note 4: The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. The machine model is a 200 pF capacitor discharged di-
rectly into each pin.
Note 5: Typicals are at T = 25˚C and represent most likely parametric norm.
J
Note 6: Limits are 100% production tested at 25˚C. Limits over temperature are guaranteed through correlation using Statistical Quality Control (SQC) methods. The
limits are used to calculate National’s AOQL.
Note 7: The boldface (over-temperature) limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage Tolerance
±
[(∆V /∆T)(max∆T)(V )]. Where, ∆V /∆T is the V temperature coefficient, max∆T is the maximum difference in temperature from the reference point of 25˚C to T
R
R
R
R
MIN or T
, and V is the reverse breakdown voltage. The total over-temperature tolerance for the different grades in the industrial temperature range where max∆T
R
MAX
= 65˚C is shown below:
±
±
±
A-grade: 0.425% = 0.1% 50 ppm/˚C x 65˚C
±
±
±
B-grade: 0.525% = 0.2% 50 ppm/˚C x 65˚C
±
±
±
C-grade: 0.825% = 0.5% 50 ppm/˚C x 65˚C
±
±
Therefore, as an example, the A-grade LM4050-2.5 has an over-temperature Reverse Breakdown Voltage tolerance of 2.5V x 0.425% = 11 mV.
Note 8: Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change must be taken into
account separately.
7
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Typical Performance Characteristics
Output Impedance vs Frequency
Output Impedance vs Frequency
DS101045-10
DS101045-11
Reverse Characteristics and
Minimum Operating Current
Noise Voltage vs Frequency
DS101045-12
DS101045-13
Thermal Hysteresis
DS101045-29
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8
Start-Up Characteristics
LM4050-2.5
RS = 30k
DS101045-5
DS101045-7
LM4050-10.0
RS = 30k
LM4050-5.0
RS = 30k
DS101045-8
DS101045-9
Functional Block Diagram
DS101045-14
9
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Applications Information
The LM4050 is a precision micro-power curvature-corrected
bandgap shunt voltage reference. For space critical applica-
tions, the LM4050 is available in the sub-miniature SSOT-23
surface-mount package. The LM4050 has been designed for
stable operation without the need of an external capacitor
connected between the “+” pin and the “−” pin. If, however, a
bypass capacitor is used, the LM4050 remains stable. Re-
ducing design effort is the availability of several fixed reverse
breakdown voltages: 2.500V, 4.096V, 5.000V, 8.192V, and
10.000V. The minimum operating current increases from
60 µA for the LM4050-2.5 to 100 µA for the LM4050-10.0. All
versions have a maximum operating current of 15 mA.
(spec. table) to the LM4050 even when the supply voltage is
at its minimum and the load current is at its maximum value.
When the supply voltage is at its maximum and IL is at its
minimum, RS should be large enough so that the current
flowing through the LM4050 is less than 15 mA.
RS is determined by the supply voltage, (VS), the load and
operating current, (IL and IQ), and the LM4050’s reverse
breakdown voltage, VR.
LM4050s in the SSOT-23 packages have a parasitic Schot-
tky diode between pin 2 (−) and pin 3 (Die attach interface
contact). Therefore, pin 3 of the SSOT-23 package must be
left floating or connected to pin 2.
Typical Applications
The 4.096V version allows single +5V 12-bit ADCs or DACs
to operate with an LSB equal to 1 mV. For 12-bit ADCs or
DACs that operate on supplies of 10V or greater, the 8.192V
version gives 2 mV per LSB.
In a conventional shunt regulator application (Figure 1) , an
external series resistor (RS) is connected between the sup-
ply voltage and the LM4050. RS determines the current that
flows through the load (IL) and the LM4050 (IQ). Since load
current and supply voltage may vary, RS should be small
enough to supply at least the maximum guaranteed IRMIN
DS101045-15
FIGURE 1. Shunt Regulator
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Typical Applications (Continued)
DS101045-16
*
* Ceramic monolithic
*Tantalum
FIGURE 2. LM4050-4.1’s Nominal 4.096 breakdown voltage gives ADC12451 1 mV/LSB
11
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Typical Applications (Continued)
DS101045-17
FIGURE 3. Bounded amplifier reduces saturation-induced delays and can prevent succeeding stage damage.
±
Nominal clamping voltage is 11.5V (LM4050’s reverse breakdown voltage +2 diode VF).
DS101045-18
±
FIGURE 4. Protecting Op Amp input. The bounding voltage is 4V with the LM4050-2.5
(LM4050’s reverse breakdown voltage + 3 diode VF).
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Typical Applications (Continued)
DS101045-19
±
FIGURE 5. Precision 4.096V Reference
DS101045-22
DS101045-21
FIGURE 6. Precision 1 µA to 1 mA Current Sources
13
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Physical Dimensions inches (millimeters) unless otherwise noted
Plastic Surface Mount Package (M3)
NS Package Number MF03A
(JEDEC Registration TO-236AB)
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COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
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into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
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