LM612AMN [NSC]

Dual-Channel Comparator and Reference; 双通道比较器和参考
LM612AMN
型号: LM612AMN
厂家: National Semiconductor    National Semiconductor
描述:

Dual-Channel Comparator and Reference
双通道比较器和参考

比较器
文件: 总10页 (文件大小:246K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
February 1995  
LM612  
Dual-Channel Comparator and Reference  
General Description  
Features  
COMPARATORS  
The dual-channel comparator consists of two individual  
comparators, having an input voltage range that extends  
down to the negative supply voltage Vb. The common  
open-collector output can be driven low by either half of the  
LM612. This configuration makes the LM612 ideal for use  
as a window comparator. The input stages of the compara-  
tor have lateral PNP input transistors which maintain low  
input currents for large differential input voltages and swings  
Y
Low operating current  
300 mA  
Y
Wide supply voltage range  
4V to 36V  
Y
Open-collector outputs  
Input common-mode range  
Vb to (Va  
Y
b
1.8V)  
Y
g
Wide differential input voltage  
36V  
REFERENCE  
above Va  
.
Y
Fixed output voltage  
1.24V  
The 1.2V voltage reference, referred to the Vb terminal, is a  
two-terminal shunt-type band-gap similar to the LM185-1.2  
Y
g
Tight initial tolerance available  
0.6% (25 C)  
§
Y
Wide operating current range  
17 mA to 20 mA  
g
series, with voltage accuracy of 0.6% available. The refer-  
Y
Tolerant of load capacitance  
ence features operation over a shunt current range of 17 mA  
to 20 mA, low dynamic impedance, and broad capacitive  
load range.  
Applications  
Y
Voltage window comparator  
As  
a member of National’s Super-BlockTM family, the  
Y
Power supply voltage monitor  
LM612 is a space-saving monolithic alternative to a multi-  
chip solution, offering a high level of integration without sac-  
rificing performance.  
Y
Dual-channel fault monitor  
Connection Diagram  
TL/H/11058–1  
Top View  
Ordering Information  
For information about surface-mount packaging of this device, please contact the Analog Product Marketing group at  
National Semiconductor Corporation headquarters.  
Temperature Range  
Military  
NSC  
Reference  
Tolerances  
Package  
Package  
Number  
Industrial  
s
s
s
40 C T  
b
a
b
a
85 C  
J
55 C  
§
T
125 C  
§
§
§
J
g
80 ppm/ C Max  
0.6% at 25 C,  
8-Pin  
§
LM612AMN  
LM612AIN  
N08E  
J08A  
N08E  
M08A  
Molded DIP  
§
LM612AMJ/883  
(Note 13)  
8-Pin  
Ceramic DIP  
g
150 ppm/ C Max  
2.0% at 25 C,  
8-Pin  
§
LM612MN  
LM612IN  
LM612IM  
Molded DIP  
§
8-Pin Narrow  
Surface Mount  
Super-BlockTM is a trademark of National Semiconductor Corporation.  
C
1995 National Semiconductor Corporation  
TL/H/11058  
RRD-B30M115/Printed in U. S. A.  
Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales  
Office/Distributors for availability and specifications.  
Thermal Resistance, Junction-to-Ambient (Note 5)  
N Package  
100 C/W  
§
Soldering Information  
N Package  
Soldering (10 seconds)  
Voltage on Any Pin Except V (referred to Vb pin)  
R
(Note 2)  
(Note 3)  
36V (Max)  
0.3V (Min)  
260 C  
§
1 kV  
b
g
ESD Tolerance (Note 6)  
g
Current through Any Input Pin and V Pin  
R
20 mA  
Operating Temperature Range  
s
g
Differential Input Voltage  
36V  
(Note 4)  
s
a
b
LM612AI, LM612I  
LM612AM, LM612M  
40 C  
T
J
85 C  
§
Output Short-Circuit Duration  
§
55 C  
s
s
b
a
T
J
125 C  
§
§
s
s
a
b
Storage Temperature Range  
65 C  
§
T
J
150 C  
§
Maximum Junction Temperature  
150 C  
§
a
Electrical Characteristics These specifications apply for Vb GND 0V, V  
5V, V  
CM  
V
a/2,  
e
25 C; limits in boldface type apply over the  
e
e
e
e
e
V
OUT  
e
Operating Temperature Range.  
I
100 mA, unless otherwise specified. Limits in standard typeface are for T  
J
§
R
LM612AM  
LM612AI  
Limits  
LM612M  
LM612I  
Limits  
Typical  
Symbol  
Parameter  
Conditions  
Units  
(Note 7)  
(Note 8)  
(Note 8)  
COMPARATORS  
e %  
I
Total Supply Current  
Va Current, R  
LOAD  
,
150  
250  
250  
mA Max  
mA Max  
S
a
s
s
3V  
V
36V  
170  
300  
300  
a
s
s
e
V
OS  
V
OS  
Offset Voltage over  
Va Range  
4V  
V
36V, R  
15 kX  
1.0  
3.0  
5.0  
mV Max  
mV Max  
L
2.0  
6.0  
7.0  
a
s
s
(V  
b
Offset Voltage over  
0V  
V
1.8V)  
1.0  
3.0  
5.0  
mV Max  
mV Max  
CM  
e
e
15 kX  
V
Range  
Va  
30V, R  
1.5  
6.0  
7.0  
CM  
L
DV  
Average Offset Voltage  
Drift  
OS  
15  
mV/ C  
§
DT  
I
I
Input Bias Current  
Input Offset Current  
Voltage Gain  
5
25  
35  
nA Max  
nA Max  
B
8
30  
40  
0.2  
4
4
nA Max  
nA Max  
OS  
0.3  
5
5
e
s
A
t
R
10 kX to 36V,  
500  
50  
50  
V/mV Min  
V/mV  
V
L
s
2V  
V
OUT  
27V  
100  
e
Swing, R  
e
TTL  
Large Signal Response  
Time  
V
1.4V, V  
e
1.5  
ms  
ms  
a
b
R
IN  
IN  
5.1 kX  
2.0  
L
e
e
1V,  
I
Output Sink Current  
V
0V, V  
20  
10  
10  
mA Min  
mA Min  
a
b
b
SINK  
IN  
IN  
IN  
e
e
V
1.5V  
0.4V  
13  
8
8
OUT  
OUT  
V
2.8  
1.0  
0.8  
mA Min  
mA Min  
2.4  
0.5  
0.5  
e
e
e
0V,  
I
Output Leakage Current  
V
V
1V, V  
36V  
0.1  
10  
10  
mA Max  
mA  
a
L
IN  
0.2  
OUT  
2
a
Electrical Characteristics These specifications apply for Vb GND 0V, V  
5V, V  
CM  
V
a/2,  
e
e
e
e
e
V
OUT  
e
Operating Temperature Range. (Continued)  
e
I
100 mA, unless otherwise specified. Limits in standard typeface are for T  
J
25 C; limits in boldface type apply over the  
§
R
LM612AM  
LM612AI  
Limits  
LM612M  
LM612I  
Limits  
Typical  
(Note 7)  
Symbol  
Parameter  
Conditions  
Units  
(Note 8)  
(Note 8)  
VOLTAGE REFERENCE (Note 9)  
V
R
Reference Voltage  
1.244  
1.2365  
1.2515  
1.2191  
1.2689  
V Min  
V Max  
g
g
2%)  
(
0.6%)  
(
DV  
Average Drift with  
Temperature  
(Note 10)  
(Note 11)  
ppm/ C  
§
Max  
R
18  
80  
150  
DT  
DV  
e
e
Average Drift with  
Time  
T
T
40 C  
§
150 C  
400  
ppm/kH  
ppm/kH  
R
J
1000  
kH  
§
J
DV  
Hysteresis  
R
3.2  
mV/ C  
§
DT  
DV  
J
b
V
R
Change with  
V
V
0.05  
1
1
mV Max  
mV Max  
R
[
]
[
]
R 100 mA  
R 17 mA  
Current  
0.1  
1.1  
1.1  
DI  
R
b
V
V
1.5  
5
5
mV Max  
mV Max  
[
R 10 mA  
(Note 12)  
]
[
]
R 100 mA  
2.0  
5.5  
5.5  
R
Resistance  
DV  
DV  
/9.9 mA  
]
0.2  
0.6  
0.56  
13  
0.56  
13  
X Max  
X Max  
[
R 10 mA to 0.1 mA  
/83 mA  
]
[
R 100 mA to 17 mA  
b
DV  
DVa  
V
Change with  
V
V
0.1  
1.2  
1.2  
mV Max  
mV Max  
a e  
a e  
a e  
R
[
R V  
]
[
R V  
]
36V  
R
5V  
Va Change  
0.1  
1.3  
1.3  
b
V
[
R V  
V
[
R V  
0.01  
1
1
mV Max  
mV Max  
a e  
]
]
3V  
5V  
0.01  
1.5  
1.5  
e
e
n
Voltage Noise  
BW  
10 Hz to 10 kHz  
30  
mV  
RMS  
Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the  
device beyond its rated operating conditions.  
Note 2: Input voltage above Va is not allowed. As long as one input pin voltage remains inside the common-mode range, the comparator will deliver the correct  
output.  
Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below  
Vb, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined  
and unpredictable when any parasitic diode or transistor is conducting.  
Note 4: Shorting the Output to Vb will not cause power dissipation, so it may be continuous. However, shorting the Output to any more positive voltage (including  
V
a), will cause 80 mA (typ.) to be drawn through the output transistor. This current multiplied by the applied voltage is the power dissipation in the output transistor.  
If this total power causes the junction temperature to exceed 150 C, degraded reliability or destruction of the device may occur. To determine junction temperature,  
§
see Note 5.  
e
a
P
Note 5: Junction temperature may be calculated using T  
T
i
. The given thermal resistance is worst-case for packages in sockets in still air. For  
JA  
J
A
D
packages soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal i is 90 C/W for the N package.  
§
JA  
Note 6: Human body model, 100 pF discharged through a 1.5 kX resistor.  
e
Note 7: Typical values in standard typeface are for T  
25 C; values in boldface type apply for the full operating temperature range. These values represent the  
§
J
most likely parametric norm.  
e
Note 8: All limits are guaranteed for T  
25 C (standard type face) or over the full operating temperature range (bold type face).  
§
J
Note 9: V is the reference output voltage, nominally 1.24V.  
R
Note 10: Average reference drift is calculated from the measurement of the reference voltage at 25 C and at the temperature extremes. The drift, in ppm/ C, is  
§
§
6
10  
DV /V  
DT , where DV is the lowest value subtracted from the highest, V  
#
is the value at 25 C, and DT is the temperature range. This  
§
]
R 25 C J  
#
parameter is guaranteed by design and sample testing.  
[
R 25 C  
]
[
R
J
R
§
§
Note 11: Hysteresis is the change in V caused by a change in T , after the reference has been ‘‘dehysterized’’. To dehysterize the reference; that is minimize the  
b
R
J
hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiralling in toward 25 C: 25 C, 85 C, 40 C, 70 C, 0 C, 25 C.  
§
§
§
§
§
§
§
Note 12: Low contact resistance is required for accurate measurement.  
Note 13: A military RETS 612AMX electrical test specification is available on request. The military screened parts can also be procured as a Standard Military  
Drawing.  
3
Simplified Schematic Diagrams  
Comparator  
TL/H/11058–2  
Reference  
Bias  
TL/H/11058–3  
4
Typical Performance Characteristics (Reference)  
e
0V, unless otherwise noted  
25 C, Vb  
e
T
J
§
Reference Voltage  
Drift vs Time  
Accelerated Reference  
Voltage Drift vs Time  
Reference Voltage vs Temp.  
e  
TL/H/11058–4  
5
Typical Performance Characteristics (Comparators)  
25 C, Va  
5V, Vb  
e
e
e
0V  
T
J
§
Supply Current  
vs Supply Voltage  
Input Bias Current vs  
Common-Mode Voltage  
Input Current vs  
Differential Input Voltage  
put,  
TL/H/11058–6  
6
Application Information  
VOLTAGE REFERENCE  
Capacitors in parallel with the reference are allowed. See  
the Reference AC Stability Range typical curve for capaci-  
tance valuesÐfrom 20 mA to 3 mA the reference is stable  
for any value of capacitance. With the reference’s wide sta-  
bility range with resistive and capacitive loads, a wide range  
of RC filter values will perform noise filtering when neces-  
sary.  
Reference Biasing  
The voltage reference is of a shunt regulator topology that  
models as a simple zener diode. With current I flowing in  
R
the ‘‘forward’’ direction there is the familiar diode transfer  
function. I flowing in the reverse direction forces the refer-  
R
ence voltage to be developed from cathode to anode.  
Reference Hysteresis  
The reference voltage depends, slightly, on the thermal his-  
tory of the die. Competitive micro-power products varyÐal-  
ways check the datasheet for any given device. Do not as-  
sume that no specification means no hysteresis.  
COMPARATORS  
Either comparator or the reference may be biased in any  
way with no effect on the other sections of the LM612, ex-  
cept when a substrate diode conducts (see Electrical Char-  
acteristics Note 3). For example, one or both inputs of one  
comparator may be outside the input voltage range limits,  
the reference may be unpowered, and the other comparator  
will still operate correctly. The inverting input of an unused  
comparator should be tied to Vb and the non-inverting tied  
TL/H/11058–8  
FIGURE 1. 1.24V Reference is Developed between  
Cathode and Anode; Current Source I is External  
R
The reference equivalent circuit reveals how V is held at  
R
the constant 1.2V by feedback for a wide range of reverse  
current.  
to Va  
.
Hysteresis  
Any comparator may oscillate or produce a noisy output if  
the applied differential input voltage is near the compara-  
tor’s offset voltage. This usually happens when the input  
signal is moving very slowly across the comparator’s switch-  
ing threshold. This problem can be prevented by the addi-  
tion of hysteresis, or positive feedback, as shown in Figure  
4.  
TL/H/11058–9  
FIGURE 2. Reference Equivalent Circuit  
To generate the required reverse current, typically a resistor  
is connected from a supply voltage higher than the refer-  
ence voltage to the Reference Output pin. Varying that volt-  
age, and so varying I , has small effect with the equivalent  
R
series resistance of less than an ohm at the higher currents.  
Alternatively, an active current source, such as the LM134  
TL/H/1105811  
FIGURE 4. R and R Add Hysteresis to Comparator  
F
S
The amount of hysteresis added in Figure 4 is  
series, may generate I  
.
R
R
S
a
V
e
c
V
H
a
(R  
R )  
S
F
R
R
S
a
ll  
R
S
&
c
V
for R  
F
F
A good rule of thumb is to add hysteresis of at least the  
maximum specified offset voltage. More than about 50 mV  
TL/H/1105810  
FIGURE 3. 1.2V Reference  
7
Application Information (Continued)  
of hysteresis can substantially reduce the accuracy of the  
comparator, since the offset voltage is effectively being in-  
creased by the hysteresis when the comparator output is  
high.  
The guaranteed common-mode input voltage range for an  
LM612 is Vb  
(Va  
s
s
b
1.8V), over temperature.  
V
CM  
This is the voltage range in which the comparisons must be  
made. If both inputs are within this range, the output will be  
at the correct state. If one input is within this range, and the  
It is often a good idea to decrease the amount of hysteresis  
until oscillations are observed, then use three times that  
minimum hysteresis in the final circuit. Note that the amount  
of hysteresis needed is greatly affected by layout. The  
amount of hysteresis should be rechecked each time the  
layout is changed, such as changing from a breadboard to a  
P.C. board.  
other input is less than (Vb 32V), even if this is greater  
a
than Va, the output will be at the correct state. If, however,  
either or both inputs are driven below Vb, and either input  
current exceeds 10 mA, the output state is not guaranteed  
to be correct. If both inputs are above (Va  
b
output state is also not guaranteed to be correct.  
1.8V), the  
Output Stage  
Input Stage  
The comparators have a common open-collector output  
stage which requires a pull-up resistor to a positive supply  
voltage for the output to switch properly. When the internal  
output transistor is off, the output (HIGH) voltage will be  
pulled up to this external positive voltage.  
The input stage uses lateral PNP input transistors which,  
unlike those of many op amps, have breakdown voltage  
BV  
equal to the absolute maximum supply voltage. Also,  
EBO  
they have no diode clamps to the positive supply nor across  
the inputs. These features make the inputs look like high  
impedances to input sources producing large differential  
and common-mode voltages.  
To ensure that the LOW output voltage is under the TTL-low  
threshold, the output transistor’s load current must be less  
than 0.8 mA (over temperature) when it turns on. This im-  
pacts the minimum value of the pull-up resistor.  
Typical Applications  
TL/H/1105812  
Power Supply Monitor with Indicator  
8
Physical Dimensions inches (millimeters)  
8-Pin Ceramic Dual-In-Line Package (J)  
Order Number LM612AMJ/883  
NS Package Number J08A  
8-Pin Surface Mount Package (M)  
Order Number LM612IM  
NS Package Number M08A  
9
Physical Dimensions inches (millimeters) (Continued)  
8-Pin Molded Dual-In-Line Package (N)  
Order Number LM612AMJ/883, LM612AMN, LM612AIN, LM612MN or LM612IN  
NS Package Number N08E  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL  
SEMICONDUCTOR CORPORATION. As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant  
into the body, or (b) support or sustain life, and whose  
failure to perform, when properly used in accordance  
with instructions for use provided in the labeling, can  
be reasonably expected to result in a significant injury  
to the user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
National Semiconductor  
Corporation  
National Semiconductor  
Europe  
National Semiconductor  
Hong Kong Ltd.  
National Semiconductor  
Japan Ltd.  
a
1111 West Bardin Road  
Arlington, TX 76017  
Tel: 1(800) 272-9959  
Fax: 1(800) 737-7018  
Fax:  
(
49) 0-180-530 85 86  
@
13th Floor, Straight Block,  
Ocean Centre, 5 Canton Rd.  
Tsimshatsui, Kowloon  
Hong Kong  
Tel: (852) 2737-1600  
Fax: (852) 2736-9960  
Tel: 81-043-299-2309  
Fax: 81-043-299-2408  
Email: cnjwge tevm2.nsc.com  
a
a
a
a
Deutsch Tel:  
English Tel:  
Fran3ais Tel:  
Italiano Tel:  
(
(
(
(
49) 0-180-530 85 85  
49) 0-180-532 78 32  
49) 0-180-532 93 58  
49) 0-180-534 16 80  
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.  

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