LME49710 [NSC]
High Performance, High Fidelity Audio Operational Amplifier; 高性能，高保真音频运算放大器
| 型号： | LME49710 |
| 厂家： | 
National Semiconductor |
| 描述： | High Performance, High Fidelity Audio Operational Amplifier |
| 文件： | 总14页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2006
LME49710
High Performance, High Fidelity Audio Operational
Amplifier
General Description
Key Specifications
The LME49710 is part of the ultra-low distortion, low noise,
high slew rate operational amplifier series optimized and fully
specified for high performance, high fidelity applications.
Combining advanced leading-edge process technology with
state-of-the-art circuit design, the LME49710 audio opera-
tional amplifiers deliver superior audio signal amplification for
outstanding audio performance. The LME49710 combines a
very high slew rate with vanishingly low THD+N to easily sat-
isfy the most demanding audio applications. To ensure that
the most challenging loads are driven without compromise,
the LME49710 has a high slew rate of ±20V/μs and an output
current capability of ±26mA. Further, dynamic range is max-
imized by an output stage that drives 2kΩ loads to within 1V
of either power supply voltage and to within 1.4V when driving
600Ω loads.
The LME49710 has a wide supply range of ±2.5V to ±17V.
Over this supply range the LME49710’s input circuitry main-
tains excellent common-mode and power supply rejection, as
well as maintaining its low input bias current. The LME49710
is unity gain stable. It retains its outstanding performance
while driving difficult capacitive loads with values as high as
100pF.
■ꢀPower Supply Voltage Range
■ꢀTHD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz)
RL = 2kΩ
±2.5V to ±17V
0.00003% (typ)
0.00003% (typ)
RL = 600Ω
■ꢀInput Noise Density
■ꢀSlew Rate
■ꢀGain Bandwidth Product
■ꢀOpen Loop Gain (RL = 600Ω)
■ꢀInput Bias Current
■ꢀInput Offset Voltage
2.5nV/√Hz (typ)
±20V/μs (typ)
55MHz (typ)
140dB (typ)
7nA (typ)
0.05mV (typ)
Features
Easily drives 600Ω loads
Optimized for superior audio signal fidelity
■
■
■
■
■
Output short circuit protection
PSRR and CMRR exceed 110dB (typ)
SOIC, DIP, TO-99 metal can packages
The LME49710 is available in 8–lead narrow body SOIC, 8–
lead plastic DIP, and 8–lead metal can TO-99. Demonstration
boards are available for each package.
Applications
Ultra high quality audio amplification
■
■
■
■
■
■
■
■
High fidelity preamplifiers
High fidelity multimedia
State of the art phono pre amps
High performance professional audio
High fidelity equalization and crossover networks
High performance line drivers
High performance line receivers
High fidelity active filters
■
Typical Application
20210406
FIGURE 1. Passively Equalized RIAA Phono Preamplifier
© 2006 National Semiconductor Corporation
202104
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Connection Diagrams
20210402
Order Number LME49710MA
See NS Package Number — M08A
Order Number LME49710NA
See NS Package Number — N08E
Metal Can
20210405
Order Number LME49710HA
See NS Package Number — H08C
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2
ESD Susceptibility (Note 5)
Junction Temperature
Thermal Resistance
ꢁθJA (SO)
200V
150°C
Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
145°C
102°C
150°C
35°C
ꢁθJA (NA)
Power Supply Voltage
(VS = V+ - V-)
Storage Temperature
Input Voltage
36V
−65°C to 150°C
ꢁθJA (HA)
ꢁθJC (HA)
(V-)ꢀ-ꢀ0.7V to (V+)ꢀ+ꢀ0.7V
Continuous
Temperature Range
TMIN ≤ TA ≤ TMAX
Supply Voltage Range
Output Short Circuit (Note 3)
Power Dissipation
ESD Susceptibility (Note 4)
–40°C ≤ TA ≤ 85°C
±2.5V ≤ VS ≤ ± 17V
Internally Limited
2000V
Electrical Characteristics
LME49710
Units
(Limits)
Symbol
Parameter
Conditions
Typical
Limit
(Note 6)
(Notes 7, 8)
AV = 1, VOUT = 3VRMS
RL = 2kΩ
RL = 600Ω
THD+N
Total Harmonic Distortion + Noise
Intermodulation Distortion
0.00003
0.00003
% (max)
% (max)
0.00009
AV = 1, VOUT = 3VRMS
IMD
Two-tone, 60Hz & 7kHz 4:1
VIN = 1VP-P, 1kHz residual
0.00005
% (max)
GBWP
SR
Gain Bandwidth Product
Slew Rate
55
45
MHz (min)
±20
±15
V/μs (min)
VOUT = 1VP-P, –3dB
referenced to output magnitude
at f = 1kHz
FPBW
ts
Full Power Bandwidth
10
MHz
AV = 1, 10V step, CL = 100pF
0.1% error range
Settling time
1.2
μs
Equivalent Input Noise Voltage
fBW = 20Hz to 20kHz
0.34
0.65
4.7
μVRMS
en
in
f = 1kHz
f = 10Hz
2.5
6.4
ꢀnV/√Hz
ꢀnV/√Hz
Equivalent Input Noise Density
f = 1kHz
f = 10Hz
1.6
3.1
ꢀpA/√Hz
ꢀpA/√Hz
mV (max)
Current Noise Density
Offset Voltage
VOS
±0.05
0.2
±0.7
Average Input Offset Voltage Drift vs
Temperature
ΔVOS/ΔTemp
40°C ≤ TA ≤ 85°C
μV/°C
Average Input Offset Voltage Shift vs
Power Supply Voltage
PSRR
IB
ΔVS = 20V (Note 9)
125
7
110
72
dB (min)
nA (max)
nA/°C
Input Bias Current
VCM = 0V
Input Bias Current Drift vs
Temperature
ΔIOS/ΔTemp
IOS
0.1
5
–40°C ≤ TA ≤ 85°C
Input Offset Current
VCM = 0V
65
nA (max)
Common-Mode Input Voltage Range
+14.1
–13.9
(V+) – 20
(V-) + 20
V (min)
V (min)
VIN-CM
CMRR
–10V<VCM<10V
Common-Mode Rejection
120
30
110
dB (min)
kΩ
Differential Input Impedance
Common Mode Input Impedance
ZIN
–10V<VCM<10V
10
MΩ
dB
140
–10V<VOUT<10V, RL = 600Ω
–10V<VOUT<10V, RL = 2kΩ
–10V<VOUT<10V, RL = 10kΩ
140
140
AVOL
Open Loop Voltage Gain
dB
dB
3
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LME49710
Units
(Limits)
Symbol
Parameter
Conditions
Typical
Limit
(Notes 7, 8)
±12.5
(Note 6)
13.6
RL = 600Ω
RL = 2kΩ
RL = 10kΩ
V
14.0
14.1
±26
VOUTMAX
Maximum Output Voltage Swing
V
V
IOUT
Output Current
±23
mA (min)
RL = 600Ω, VS = ±17V
+53
–42
mA
mA
IOUT-CC
Short Circuit Current
fIN = 10kHz
Closed-Loop
Open-Loop
ROUT
Output Impedance
0.01
13
Ω
Ω
Overshoot
10%
25%
CLOAD
IS
Capacitive Load Drive
Quiescent Current
100
200
pF
pF
IOUT = 0mA
4.8
5.5
mA (max)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Note 2: Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications
and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics
may degrade when the device is not operated under the listed test conditions.
Note 3: Amplifier output connected to GND, any number of amplifiers within a package.
Note 4: Human body model, 100pF discharged through a 1.5kΩ resistor.
Note 5: Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then discharged directly into
the IC with no external series resistor (resistance of discharge path must be under 50Ω).
Note 6: Typical specifications are specified at +25ºC and represent the most likely parametric norm.
Note 7: Tested limits are guaranteed to National's AOQL (Average Outgoing Quality Level).
Note 8: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Note 9: PSRR is measured as follows: VOS is measured at two supply voltages, ±5V and ±15V. PSRR = |20log(ΔVOS/ΔVS)|.
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4
Capacitive loads greater than 100pF must be isolated from
the output. The most straight forward way to do this is to put
a resistor in series with the output. This resistor will also pre-
vent excess power dissipation if the output is accidentally
shorted.
Application Hints
The LME49710 is a high speed op amp with excellent phase
margin and stability. Capacitive loads up to 100pF will cause
little change in the phase characteristics of the amplifiers and
are therefore allowable.
Noise Measurement Circuit
20210427
Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for power line noise.
Total Gain: 115 dB at f = 1 kHz
Input Referred Noise Voltage: en = V O/560,000 (V)
RIAA Preamp Voltage Gain
RIAA Deviation vs Frequency
VIN = 10mV, AV = 35.0dB, f = 1kHz
Flat Amp Voltage Gain vs Frequency
VO = 0dB, AV = 80.0dB, f = 1kHz
20210429
20210428
5
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Typical Applications
NAB Preamp
NAB Preamp Voltage Gain vs Frequency
VIN = 10mV, 34.5dB, f = 1kHz
20210431
20210430
AV = 34.5
F = 1 kHz
En = 0.38 μV
A Weighted
Balanced to Single Ended Converter
Adder/Subtracter
20210433
VO = V1 + V2 − V3 − V4
20210432
VO = V1–V2
Sine Wave Oscillator
20210434
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6
Second Order High Pass Filter
(Butterworth)
Second Order Low Pass Filter
(Butterworth)
20210435
20210436
Illustration is f0 = 1 kHz
Illustration is f0 = 1 kHz
State Variable Filter
20210437
Illustration is f0 = 1 kHz, Q = 10, ABP = 1
7
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Line Driver
20210440
Tone Control
20210441
Illustration is:
fL = 32 Hz, fLB = 320 Hz
fH =11 kHz, fHB = 1.1 kHz
20210442
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8
RIAA Preamp
20210403
Av = 35 dB
En = 0.33 μV
S/N = 90 dB
f = 1 kHz
A Weighted
A Weighted, VIN = 10 mV
@f = 1 kHz
Balanced Input Mic Amp
20210443
Illustration is:
V0 = 101(V2 − V1)
9
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inputs changes the amplifier’s noise gain. The result is that
the error signal (distortion) is amplified by a factor of 101. Al-
though the amplifier’s closed-loop gain is unaltered, the feed-
back available to correct distortion errors is reduced by 101,
which means that measurement resolution increases by 101.
To ensure minimum effects on distortion measurements,
keep the value of R1 low as shown in Figure 1.
Application Information
DISTORTION MEASUREMENTS
The vanishingly low residual distortion produced by
LME49710 is below the capabilities of all commercially avail-
able equipment. This makes distortion measurements just
slightly more difficult than simply connecting a distortion me-
ter to the amplifier’s inputs and outputs. The solution, how-
ever, is quite simple: an additional resistor. Adding this
resistor extends the resolution of the distortion measurement
equipment.
This technique is verified by duplicating the measurements
with high closed loop gain and/or making the measurements
at high frequencies. Doing so produces distortion compo-
nents that are within the measurement equipment’s capabili-
ties. This datasheet’s THD+N and IMD values were generat-
ed using the above described circuit connected to an Audio
Precision System Two Cascade.
The LME49710’s low residual distortion is an input referred
internal error. As shown in Figure 1, adding the 10Ω resistor
connected between the amplifier’s inverting and non-inverting
20210407
FIGURE 2. THD+N and IMD Distortion Test Circuit
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10
Revision History
Rev
Date
Description
1.0
11/16/07
Initial release.
11
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Physical Dimensions inches (millimeters) unless otherwise noted
Dual-In-Line Package
Order Number LME49710MA
NS Package Number M08A
Dual-In-Line Package
Order Number LME49710NA
NS Package Number N08E
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12
TO-99 Metal Can
Order Number LME49710HA
NS Package Number H08C
13
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Copyright© 2006 National Semiconductor Corporation
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