LMX3161 [NSC]

Single Chip Radio Transceiver; 单芯片无线电收发器
LMX3161
型号: LMX3161
厂家: National Semiconductor    National Semiconductor
描述:

Single Chip Radio Transceiver
单芯片无线电收发器

无线
文件: 总14页 (文件大小:215K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PRELIMINARY  
November 1999  
LMX3161  
Single Chip Radio Transceiver  
vides a low cost, high performance solution for communica-  
tions systems. The RSSI output may be used for channel  
quality monitoring.  
General Description  
The LMX3161 Single Chip Radio Transceiver is a monolithic,  
integrated radio transceiver optimized for use in a Digital En-  
hanced Cordless Telecommunications (DECT) system. It is  
The Single Chip Radio Transceiver is available in a 48-pin  
7mm X 7mm X 1.4mm PQFP surface mount plastic pack-  
age.  
fabricated using National’s ABiC  
V BiCMOS process  
=
(fT 18 GHz).  
The LMX3161 contains phase locked loop (PLL), transmit  
and receive functions. The 1.1 GHz PLL block is shared be-  
tween transmit and receive section. The transmitter includes  
a frequency doubler, and a high frequency buffer. The re-  
ceiver consists of a 2.0 GHz low noise mixer, an intermediate  
frequency (IF) amplifier, a high gain limiting amplifier, a fre-  
quency discriminator, a received signal strength indicator  
(RSSI), and an analog DC compensation loop. The PLL,  
doubler, and buffers can be used to implement open loop  
modulation along with an external VCO and loop filter. The  
circuit features on-chip voltage regulation to allow supply  
voltages ranging from 3.0V to 5.5V. Two additional voltage  
regulators provide a stable supply source to external dis-  
crete stages in the Tx and Rx chains.  
Features  
n Single chip solution for DECT RF transceiver  
n RF sensitivity to −93 dBm; RSSI sensitivity to −100 dBm  
n Two regulated voltage outputs for discrete amplifiers  
n High gain (85 dB) intermediate frequency strip  
n Allows unregulated 3.0V–5.5V supply voltage  
n Power down mode for increased current savings  
n System noise figure 6.5 dB (typ)  
Applications  
n Digital Enhanced Cordless Telecommunications (DECT)  
n Personal wireless communications (PCS/PCN)  
n Wireless local area networks (WLANs)  
n Other wireless communications systems  
The IF amplifier, high gain limiting amplifier, and discrimina-  
tor are optimized for 110 MHz operation, with a total IF gain  
of 85 dB. The single conversion receiver architecture pro-  
Block Diagram  
DS012815-1  
MICROWIRE is a trademark of National Semiconductor Corporation.  
TRI-STATE® is a registered trademark of National Semiconductor Corporation.  
© 1999 National Semiconductor Corporation  
DS012815  
www.national.com  
LMX3161 Pin Diagram  
DS012815-2  
Top View  
Order Number LMX3161VBH or LMX3161VBHX  
See NS Package Number VBH48A  
www.national.com  
2
LMX3161 Pin Diagram (Continued)  
Pin No.  
Pin Name  
VCC  
I/O  
O
Description  
1
2
Power supply for CMOS section of PLL and ESD bussing.  
MIXEROUT  
VCC  
IF output from the mixer.  
3
I
Power supply for mixer section.  
4
GND  
RFIN  
Ground.  
5
RF input to the mixer.  
6
GND  
Tx VREG  
VCC  
O
Ground.  
7
Regulated power supply for external PA gain stage.  
8
Power supply for analog sections of PLL and doubler.  
9
GND  
TxOUT  
GND  
VCC  
Ground.  
10  
11  
12  
13  
14  
15  
16  
Frequency doubler output.  
I
Ground.  
Power supply for analog sections of PLL and doubler.  
GND  
GND  
fIN  
Ground.  
Ground.  
RF Input to PLL and frequency doubler.  
CE  
I
Chip Enable. Pulling LOW powers down entire chip. Taking CE HIGH powers up the  
appropriate functional blocks depending on the state of bits F6, F7, F11, and F12  
programmed in F-latch. It is necessary to initialize the internal registers once, after the  
power up reset. The registers’ contents are kept even in power-down condition.  
17  
18  
19  
20  
21  
VP  
Do  
O
Power supply for charge pump.  
Charge pump output. For connection to a loop filter for driving the input of an external VCO.  
VCC  
O
Power supply for CMOS section of PLL and ESD bussing.  
Ground.  
GND  
OUT 0  
Programmable CMOS output. Refer to Function Register Programming Description section  
for details.  
22  
23  
24  
Rx PD/OUT 1  
Tx PD/OUT 2  
PLL PD  
I/O Receiver power down control input or programmable CMOS output. Refer to Function  
Register Programming Description section for details.  
I/O Transmitter power down control input or programmable CMOS output. Refer to Function  
Register Programming Description section for details.  
I
PLL power down control input. LOW for PLL normal operations, and HIGH for PLL power  
saving.  
25  
26  
27  
28  
29  
CLOCK  
DATA  
LE  
I
I
I
I
I
MICROWIRE clock input. High impedance CMOS input with Schmitt Trigger.  
MICROWIRE data input. High impedance CMOS input with Schmitt Trigger.  
MICROWIRE load enable input. High impedance CMOS input with Schmitt Trigger.  
Oscillator input. High impedance CMOS input with feedback.  
OSCIN  
S FIELD  
DC compensation circuit enable. While LOW, the DC compensation circuit is enabled and  
the threshold is updated through the DC compensation loop. While HIGH, the switch is  
opened, and the comparator threshold is held by the external capacitor.  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
RSSIOUT  
THRESH  
DC COMPIN  
DISCOUT  
GND  
O
O
I
Received signal strength indicator (RSSI) output.  
Threshold level to external comparator.  
Input to DC compensation circuit.  
Demodulated output of discriminator.  
Ground.  
O
I
VCC  
Power supply for the discriminator circuit.  
Quadrature input for tank circuit.  
Power supply for limiter output stage.  
Ground.  
QUADIN  
VCC  
GND  
VCC  
Power supply for limiter gain stages.  
Ground.  
GND  
VCC  
Power supply for IF amplifier gain stages.  
3
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LMX3161 Pin Diagram (Continued)  
Pin No.  
42  
Pin Name  
LIMIN  
GND  
I/O  
I
Description  
IF input to the limiter.  
Ground.  
43  
O
I
44  
IFOUT  
VCC  
IF output from IF amplifier.  
Power supply for IF amplifier output.  
Ground.  
45  
46  
GND  
47  
IFIN  
IF input to IF amplifier.  
48  
Rx VREG  
Regulated power supply for external LNA stages.  
www.national.com  
4
Absolute Maximum Ratings (Notes 1, 2)  
Recommended Operating  
Conditions  
Power Supply Voltage (VCC  
)
−0.3V to +6.5V  
−0.3V to +6.5V  
VP  
Supply Voltage (VCC  
)
3.0V to 5.5V  
VCC to 5.5V  
Voltage on Any Pin with  
(VP)  
=
GND 0V (VI)  
−0.3V to VCC +0.3V  
−65˚C to +150˚C  
+260˚C  
Operating Temperature (TA)  
−10˚C to +70˚C  
Storage Temperature Range (TS)  
Lead Temp. (solder, 4 sec)(TL)  
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to  
the device may occur. Recommended Operating Conditions indicate condi-  
tions for which the device is intended to be functional, but do not guarantee  
specific performance limits. For guaranteed specifications and test condi-  
tions, see the Electrical Characteristics section. The guaranteed specifica-  
tions apply only for the test conditions listed.  
Note 2: This device is a high performance RF integrated circuit with an ESD  
<
rating  
KeV and is ESD sensitive. Handling and assembly of this device  
should only be done at ESD work stations.  
Electrical Characteristics  
=
=
The following specifications are guaranteed for VCC 3.6V and TA 25˚C, unless otherwise specified.  
Symbol  
Parameter  
Current Consumption  
Conditions  
Min  
Typ  
Max  
Unit  
IDD, RX  
IDD, TX  
-Open-Loop Receive Mode  
-Open-Loop Transmit Mode  
PLL & TX chain powered down  
PLL & RX chain powered down  
RX & TX chain powered down  
50  
27  
6
60  
37  
8
mA  
mA  
mA  
µA  
IDD, PLL -Closed-Loop PLL Mode  
IPD  
-Power Down Mode  
70  
=
=
= =  
1780 MHz (fIN 890 MHz)  
MIXER  
fRF  
fRF 1.89 GHz, fIF 110 MHz, f  
LO  
RF Frequency Range  
(Note 3)  
(Note 4)  
1.7  
14  
−24  
2.0  
14  
GHz  
MHz  
fIF  
IF Frequency  
110  
15-j5  
ZIN  
Input Impedance, RFIN  
Output Impedance, Mixer Out  
Noise Figure (Single Side Band)  
Conversion Gain  
160-j70  
ZOUT  
NF  
(Notes 5, 6)  
(Note 5)  
10  
17  
dB  
GC  
dB  
P1dB  
OIP3  
Input 1dB Compression Point  
Output 3rd Order Intercept Point  
Fin to RF Isolation  
(Note 5)  
−20  
7.5  
dBm  
dBm  
dB  
(Note 5)  
=
F
F
IN-RF  
FIN 890 MHz  
−30  
−10.6  
−30  
−30  
−30  
−30  
−30  
=
fIN 1780 MHz  
dB  
=
fIN 2670 MHz  
dB  
=
IN-IF  
Fin to IF Isolation  
RF to IF Isolation  
fIN 890 MHz  
dB  
=
fIN 1780 MHz  
dB  
=
fIN 2670 MHz  
dB  
=
RF–IF  
IF AMPLIFIER  
PIN 0 to −85 dB  
dB  
=
fIN 110 MHz  
NF  
Noise Figure  
(Note 7)  
(Note 7)  
15  
8
11  
dB  
dB  
AV  
Gain  
24  
150–j120  
ZIN  
Input Impedance  
Output Impedance  
190–j20  
ZOUT  
=
IF LIMITER  
fIN 110 MHz  
−3  
=
Sens  
IFIN  
Limiter/Discriminator Sensitivity  
IF Limiter Input Impedance  
BER 10  
−65  
100–j300  
dBm  
=
DISCRIMINATOR  
fIN 110 MHz  
Disc Gain  
1X Mode  
10  
33  
mV/˚  
mV/˚  
mV  
mV  
V
(mV/˚ of Phase Shift from Tank Circuit)  
3X Mode  
VOUT  
Discriminator Output Peak to Peak  
Voltage  
1X Mode (Note 8)  
3X Mode (Note 8)  
Nominal (Note 10)  
80  
160  
580  
400  
1.2  
VOS  
Disc. Output DC Voltage  
1.82  
DISCOUT Disc. Output Impedance  
300  
5
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Electrical Characteristics (Continued)  
=
=
The following specifications are guaranteed for VCC 3.6V and TA 25˚C, unless otherwise specified.  
Symbol  
Parameter  
Conditions  
fIN 110 MHz  
Min  
Typ  
Max  
Unit  
=
RSSI (Note 11)  
RSSIout Output Voltage  
=
@
PIN −80 dBm IFIN input pin  
0.12  
0.9  
11  
0.2  
1.2  
18  
0.6  
V
V
=
@
PIN −20 dBm IFIN input pin  
=
@
Slope  
PIN −90 to −30 dBm LIMIN input pin  
25  
mV/d  
B
=
@
RSSI  
Dynamic Range  
PIN min −90 dBm LIMIN input pin  
Centered at 1.5V  
60  
dB  
DC COMPENSATION CIRCUIT  
VOS  
VI/O  
RSH  
Input Offset Voltage  
−5  
1.0  
+5  
mV  
VPP  
Input/Output Voltage Swing  
Sample and Hold Resistor  
2000  
3000  
3600  
=
FREQUENCY SYNTHESIZER  
PIN −14 to −9 dBm  
fIN  
Input Frequency Range  
Input Signal Level  
(Note 9)  
500  
−11.5  
1200  
MHz  
dBm  
MHz  
Vpp  
=
PIN  
ZIN 200(Note 15)  
fOSC  
VOSC  
Oscillator Frequency Range  
Oscillator Sensitivity  
(Note 12)  
(Note 12)  
5
20  
0.5  
1.0  
=
=
IDo-source Charge Pump Output Current  
Vdo  
V
P/2, Icpo LOW  
−1.5  
mA  
(Note 14)  
=
=
IDo-sink  
Vdo  
V
P/2, Icpo LOW  
1.5  
−6.0  
6.0  
mA  
mA  
mA  
nA  
(Note 14)  
= =  
V P/2, Icpo HIGH  
(Note 14)  
IDo-source  
Vdo  
=
=
IDo-sink  
Vdo  
V
P/2, ICPO HIGH  
(Note 14)  
IDo-Tri  
0.5 Vdo Vp − 0.5  
−1.0  
1.0  
=
TA 25˚C  
=
=
FREQUENCY DOUBLER  
fIN 945 MHz, fOUT 1.89 GHz  
fOUT  
Output Frequency Range  
Output Signal Level  
(Note 13)  
1770  
−10  
−3  
1900  
MHz  
dBm  
dBm  
dBm  
= =  
PIN −11.5 dBm, fOUT 1.89 GHz  
POUT  
=
=
Fundamental Output Power  
Harmonic Output Power  
Output Impedance  
PIN −11.5 dBm, fOUT 945 MHz  
−22  
−13.5  
−15  
=
=
PIN −11.5 dBm, fOUT 2.835 GHz  
−24  
ZOUT  
TX chain powered up  
25+j60  
15-j30  
TX chain powered down  
VOLTAGE REGULATOR  
VO Output Voltage  
DIGITAL INPUT/OUTPUT PINS  
=
ILOAD 5 mA  
2.55  
2.75  
2.90  
V
VIH  
VIL  
High Level Input Voltage  
Low Level Input Voltage  
Input Current  
2.4  
0.0  
−10  
2.4  
VCC  
0.8  
10  
V
V
<
<
IIH  
GND VIN VCC  
µA  
V
=
VOH  
VOL  
High Level Output Voltage  
Low Level Output Voltage  
IOH −0.5 mA  
=
IOL 0.5 mA  
0.4  
V
Note 3: The mixer section is tested at 1.89 GHz, and it is guaranteed by design to operate within 1.7  
— 2.0 GHz range.  
Note 4: The IF section of this device is designed for optimum operating performance at 110 MHz to meet the DECT specifications.  
Note 5: The matching network used on RF consists of a series 3.3 pF capacitance into the pin. The matching circuit used on MIXER  
consists of a series 100  
IN  
OUT  
nH inductance and a shunt 12 pF capacitance into the pin.  
Note 6: Noise Figure measurements are made with 890 MHz BPF on the F input and matching networks on RF and MIXER  
IN IN OUT  
.
Note 7: The matching network used on IF consists of a series 33 nH inductance and a shunt 1.8 pF capacitance into the pin.  
IN  
Note 8: The discriminator is with the DC level centered at 1.5V. The unloaded Q of the tank is 40.  
Note 9: The frequency synthesizer section is guaranteed by design to operate within 500 - - 1200 MHz range.  
Note 10: Nominal refers to zero DC offsets programmed for the discriminator.  
Note 11: It depends on loss of inter-stage filter. These specifications are for an inter-stage filter with a loss of 8 dB.  
Note 12: The frequency synthesizer section is guaranteed by design to operate for OSC input frequency within 5 — 20 MHz range and minimun amplitude of 0.5  
IN  
V
.
pp  
www.national.com  
6
Electrical Characteristics (Continued)  
Note 13: The doubler section is tested at 1.89 GHz, and it is guaranteed by design to operate within 1.7  
— 1.9 GHz range.  
Note 14: See Function Register Programming Description for Icp description.  
o
Note 15: Tested in a 50environment.  
AC Timing Characteristics  
Serial Data Input Timing  
TEST CONDITIONS: The Serial Data Input Timing is tested using a symmetrical waveform around VCC/2. The test waveform has  
an skew rate of 0.6 V / ns.  
DS012815-3  
Notes: Parenthesis data indicates programmable reference divider data.  
Data shifted into register on clock rising edge.  
Data is shifted in MSB first.  
Symbol  
MICROWIRE Interface  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
tCS  
Data to Clock Set Up Time  
Data to Clock Hold Time  
Clock Pulse Width High  
Refer to Test Condition.  
Refer to Test Condition.  
Refer to Test Condition.  
Refer to Test Condition.  
Refer to Test Condition.  
Refer to Test Condition.  
50  
10  
50  
50  
50  
50  
ns  
ns  
ns  
ns  
ns  
ns  
tCH  
tCWH  
tCWL  
tES  
Clock Pulse Width Low  
Clock to Load Enable Set Up Time  
Load Enable Pulse Width  
tEW  
7
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PLL Functional Description  
The simplified block diagram below shows the building blocks of frequency synthesizer and all internal registers, which are 20-bit  
data register, 18-bit F-latch, 12-bit N-counter, and 6-bit R-counter.  
DS012815-4  
The DATA stream is clocked into the data register on the rising edge of CLOCK signal, MSB first. The last two bits are the control  
bits to indicate which register to be written. Upon the rising edge of the LE (Load Enable) signal, the rest of data bits is transferred  
to the addressed register accordingly. The decoding scheme of the two control bits is as follows:  
Control Bits  
Register  
C2  
0
C1  
0
N-Counter  
R-Counter  
F-Latch  
1
0
X
1
=
Note: X Don’t Care Condition  
Programmable Feedback Divider (N-Counter)  
The N-counter consists of the 6-bit swallow counter (A-counter) and the 6-bit programmable counter (B-counter). When the con-  
trol bits are “00”, data is transferred from the 20-bit shift register into two 6-bit latches. One latch sets the A-counter while the other  
sets the B-counter. The serial data format is shown below.  
MSB  
REGISTER’S BIT MAPPING  
11 10  
N-COUNTER’s Divide Ratio  
LSB  
19  
18  
X
17  
16  
15  
X
14  
X
13  
12  
9
8
7
6
5
4
3
2
1
0
RESERVED  
C2 C1  
X
X
X
N12 N11 N10 N9  
N8  
N7  
N6  
N5  
N4 N3 N2 N1  
0
0
=
Note: X Don’t Care Condition  
Swallow Counter Divide Ratio (A-Counter)  
Divide Ratio, A  
N6  
0
N5  
0
N4  
0
N3  
0
N2  
0
N1  
0
0
1
0
0
0
0
0
1
*
*
*
*
*
*
*
63  
1
1
1
1
1
1
Note: Divide ratio must be from 0 to 63, and B must be A.  
Programmable Counter Divide Ratio (B-Counter)  
Divide Ratio, B  
N12  
N11  
N10  
N9  
N8  
1
N7  
1
3
4
0
0
*
0
0
*
0
0
*
0
1
0
0
*
*
*
*
63  
1
1
1
1
1
1
Note: Divide ratio must be from 3 to 63, and B must be A.  
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8
Programmable Reference Divider (R-Counter)  
If the control bits are “10”, data is transferred from the 20-bit shift register into a latch, which sets the 6-bit R-counter. The serial  
data format is shown below.  
MSB  
REGISTER’S BIT MAPPING  
LSB  
19  
18  
X
17  
X
16  
X
15  
X
14  
13  
12  
11 10  
9
8
7
6
5
4
3
2
1
0
RESERVED  
R-COUNTER’s Divide Ratio  
C2 C1  
X
X
X
X
X
X
X
X
R6 R5 R4 R3 R2 R1  
1
0
=
Note: X Don’t Care Condition  
Reference Counter Divide Ratio (R-Counter)  
Divide Ratio, R  
R6  
0
R5  
0
R4  
0
R3  
0
R2  
1
R1  
1
3
4
0
0
0
1
0
0
*
*
*
*
*
*
*
63  
1
1
1
1
1
1
Note: Divide ratio must be from 3 to 63.  
Pulse Swallow Function  
fvco  
:
Output frequency of external voltage controlled oscillator (VCO)  
Preset divide ratio of binary 6-bit programmable counter (3 to 63)  
Preset divide ratio of binary 6-bit swallow counter (0 A P, A B)  
: Output frequency of the external reference frequency oscillator  
B:  
A:  
fOSC  
R:  
Preset divide ratio of binary 6-bit programmable reference counter (3 to 63)  
Preset modulus of dual modulus prescaler (32 or 64)  
P:  
Receiver Functional Description  
The simplified block diagram below shows the mixer, IF amplifier, limiter, and discriminator. In addition, the DC compensation cir-  
cuit, doubler, and voltage regulator for an external LNA stage are shown.  
DS012815-5  
Note: The receiver can be powered down, either by hardware through the Rx PD pin, or by software through the programming of F6 bit in F-Latch. The power  
down control method is determined by the settings of F11 and F12 in F-Latch. (Refer to Function Register Programming Description section for details.)  
9
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Transmitter Functional Description  
The simplified block diagram below shows the doubler and voltage regulator for an external transmit gain stage.  
DS012815-6  
Note: The transmitter can be powered down, either by hardware through the Tx PD pin, or by software through the programming of F7 bith in F-Latch. The  
power down control method is determined by the settings of F11 and F12 in F-Latch. (Refer to Function Register Programming Description section for details.)  
Function Register Programming Description (F-Latch)  
If the control bits are “1X”, data is transferred from the 20-bit shift register into the 18-bit F-latch. Serial data format is shown  
below.  
MSB  
REGISTER’S BIT MAPPING  
12 11 10  
MODE CONTROL WORD  
F17 F16 F15 F14 F13 F12 F11 F10 F9 F8 F7 F6 F5 F4 F3 F2 F1  
LSB  
19  
18  
17  
16  
15  
14  
13  
9
8
7
6
5
4
3
2
1
0
C2 C1  
F18  
X
1
=
Note: X Don’t Care Condition  
Various modes of operation can be programmed with the function register bits F1–F18, including the phase detector polarity,  
charge pump TRI-STATE® and CMOS outputs. In addition, software or hardwire power down modes can be specified with bits  
F11 and F12.  
Mode  
Control  
Bit  
Setting to  
Setting to  
Model Control Description  
Prescaler modules select.  
“0” to Select  
“1” to Select  
F1  
32/33  
64/65  
F2  
Phase detector polarity. It is used to reverse the polarity of  
the phase detector according to the VCO characteristics.  
Negative VCO  
Characteristics  
Positive VCO  
Characteristics  
F3  
Charge pump current gain select.  
LOW Charge Pump  
Current (1X Icpo).  
HIGH Charge Pump  
Current (4X Icpo).  
F4  
F5  
F6  
TRI-STATE charge pump output.  
Normal Operation  
Force to TRI-STATE  
Reserved. Setting to “0” always.  
Receive chain power down control. Software power down  
Power Up RX Chain  
Power Down RX Chain  
can only be activated when both F11 and F12 are set to “0”.  
F7  
Transmit chain power down control. Software power down  
Power Up TX Chain  
Power Down TX Chain  
can only be activated when both F11 and F12 are set to “0”.  
=
=
OUT 0 HIGH  
F8  
F9  
Out 0 CMOS output.  
OUT 0 LOW  
=
=
OUT 1 HIGH  
Out 1 CMOS output. Functions only in software power down  
OUT 1 LOW  
mode, when both F11 and F12 are set to “0”.  
=
=
F10  
Out 2 CMOS output. Functions only in software power down  
OUT 2 LOW  
OUT 2 HIGH  
mode, when both F11 and F12 are set to “0”.  
F11  
F12  
Power down mode select.  
Software  
Power Down  
Hardware  
Power Down  
Set both F11 and F12 to “0” for software power down mode.  
Set both F11 and F12 to “1” for hardwire power down mode.  
Other combinations are reserved for test mode.  
F13  
F14  
Demodulator gain select  
1X Gain Mode  
3X Gain Mode  
Demodulator DC level shift +/− level shifting polarity  
Set Negative Polarity  
Set Positive Polarity  
www.national.com  
10  
Function Register Programming Description (F-Latch) (Continued)  
Mode  
Setting to  
Setting to  
Control  
Bit  
Model Control Description  
Demodulator DC level shift of 1.000V  
Demodulator DC level shift of 0.500V  
Demodulator DC level shift of 0.250V  
Demodulator DC level shift of 0.125V  
“0” to Select  
“1” to Select  
F15  
No Shift  
No Shift  
No Shift  
No Shift  
Shift the DC Level  
by 1.000V  
F16  
F17  
F18  
Shift the DC Level  
by 0.500V  
Shift the DC Level  
by 0.250V  
Shift the DC Level  
by 0.125V  
Power Down Mode/Control Table  
=
=
= =  
Hardwire Power Down Mode (F11 F12 1)  
Software Power Down Mode (F11 F12 0)  
Pin/Bit  
Setting to “0”  
means  
Setting to “1”  
means  
Pin/Bit  
Setting to “0”  
means  
Setting to “1”  
means  
F6  
F7  
Receiver ON  
Transmitter ON  
PLL ON  
Receiver OFF  
Transmitter OFF  
PLL OFF  
Rx PD  
Tx PD  
PLL PD  
CE  
Receiver OFF  
Transmitter OFF  
PLL ON  
Receiver ON  
Transmitter ON  
PLL OFF  
PLL PD  
CE  
LMX3161 OFF  
LMX3161 ON  
LMX3161 OFF  
LMX3161 ON  
11  
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Typical Application  
DS012815-7  
DECT System Calculation for 3.6V Operation  
DS012815-11  
Note: Assumes 50 dB attenuation of interferer by the SAW filter and 8 dB attenuation by the LC filter. Cascaded totals in Input IP3 are calculated at the output  
of the interstage filter.  
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12  
Loop Filter Design Consideration  
DS012815-8  
FIGURE 1. Conventional PLL Architecture  
PASSIVE LOOP FILTER  
Open loop gain H(s) G(s)  
Loop Gain Equations  
=
=
A linear control system model of the phase feedback for a  
PLL in the locked state is shown in Figure 2. The open loop  
gain is the product of the phase comparator gain (K φ ), the  
VCO gain (Kvco/s), and the loop filter gain Z(s) divided by the  
gain of the feedback counter modulus (N). The passive loop  
filter configuration used is displayed in Figure 3, while the  
complex impedance of the filter is given in Equation (2).  
=
θi/θe  
Kφ Z(s)K VCO/Ns  
(1)  
(2)  
The time constants which determine the pole and zero fre-  
quencies of the filter transfer function can be defined as  
(3)  
and  
=
T2 R2 C2  
(4)  
The 3rd order PLL Open Loop Gain can be calculated in  
terms of frequency, ω, the filter time constants T1 and T2,  
and the design constants Kφ, Kvco, and N.  
DS012815-9  
FIGURE 2. PLL Linear Model  
(5)  
From Equations (3), (4) we can see that the phase term will  
be dependent on the single pole and zero such that the  
phase margin is determined in Equation (6).  
DS012815-10  
−1  
=
φ (ω) tan  
(ω T 2) − tan−1 (ω T 1) + 180˚ (6)  
FIGURE 3. Passive Loop Filter  
13  
www.national.com  
Physical Dimensions inches (millimeters) unless otherwise noted  
48-Lead (7mm x 7mm) Molded Plastic Quad Flat Package, JEDEC  
For Tape and Reel (2500 Units per Reel)  
Order Number LMX3161VBH or LMX3161VBHX  
NS Package Number VBH48A  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL  
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant  
into the body, or (b) support or sustain life, and  
whose failure to perform when properly used in  
accordance with instructions for use provided in the  
labeling, can be reasonably expected to result in a  
significant injury to the user.  
2. A critical component is any component of a life  
support device or system whose failure to perform  
can be reasonably expected to cause the failure of  
the life support device or system, or to affect its  
safety or effectiveness.  
National Semiconductor  
Corporation  
Americas  
Tel: 1-800-272-9959  
Fax: 1-800-737-7018  
Email: support@nsc.com  
National Semiconductor  
Europe  
National Semiconductor  
Asia Pacific Customer  
Response Group  
Tel: 65-2544466  
Fax: 65-2504466  
National Semiconductor  
Japan Ltd.  
Tel: 81-3-5639-7560  
Fax: 81-3-5639-7507  
Fax: +49 (0) 1 80-530 85 86  
Email: europe.support@nsc.com  
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Italiano Tel: +49 (0) 1 80-534 16 80  
Email: sea.support@nsc.com  
www.national.com  
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.  

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