LP311M [NSC]

LP311 Voltage Comparator; LP311电压比较器
LP311M
型号: LP311M
厂家: National Semiconductor    National Semiconductor
描述:

LP311 Voltage Comparator
LP311电压比较器

比较器
文件: 总6页 (文件大小:156K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
February 1995  
LP311 Voltage Comparator  
General Description  
Features  
Y
Low power drain, 900 mW on 5V supply  
The LP311 is a low power version of the industry-standard  
LM311. It takes advantage of stable high-value ion-implant-  
ed resistors to perform the same function as an LM311, with  
a 30:1 reduction in power drain, but only a 6:1 slowdown of  
response time. Thus the LP311 is well suited for battery-  
powered applications, and all other applications where fast  
response is not needed. It operates over a wide range of  
supply voltages from 36V down to a single 3V supply, with  
less than 200 mA drain, but it is still capable of driving a 25  
mA load. The LP311 is quite easy to apply without any oscil-  
lation, if ordinary precautions are taken to minimize stray  
coupling from the output to either input or to the balance  
pins (as described in the LM311 datasheet Application  
Hints).  
Y
g
Operates from 15V or a single supply as low as 3V  
Output can drive 25 mA  
Y
Y
Y
Y
Y
Y
Emitter output can swing below negative supply  
Response time: 1.2 ms  
Same pin-out as LM311  
Low input currents: 2 nA of offset, 15 nA of bias  
b
Large common-mode input range:  
14.6V to 13.6V  
g
with 15V supply  
Applications  
Y
Level-detector for battery-powered instruments  
Y
Y
Low-power lamp or relay driver  
Low-power zero-crossing detector  
Schematic Diagram  
TL/H/5711–7  
Connection Diagram  
Dual-In-Line Package  
Order Number LP311M or LP311N  
See NS Package Numbers M08A or N08E  
TL/H/5711–4  
Top View  
C
1995 National Semiconductor Corporation  
TL/H/5711  
RRD-B30M115/Printed in U. S. A.  
Absolute Maximum Ratings  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales  
Office/Distributors for availability and specifications.  
Power Dissipation (Note 2)  
500 mW  
10 sec  
Output Short Circuit Duration  
Operating Temperature Range  
Storage Temperature Range  
0 C to 70 C  
§
§
65 C to 150 C  
Total Supply Voltage (V  
)
36V  
40V  
40V  
30V  
30V  
15V  
8–4  
b
§
§
Collector Output to Negative Supply Voltage (V  
)
7–4  
Lead Temperature (Soldering, 10 seconds)  
260 C  
§
Collector Output to Emitter Output  
g
g
g
Emitter Output to Negative Supply Voltage (V  
Differential Input Voltage  
)
1–4  
Input Voltage (Note 1)  
Electrical Characteristics  
g
s
s
T
A
e
These specifications apply for V  
15V and 0 C  
§
70 C, unless otherwise specified.  
§
S
Parameter  
Conditions  
Min  
Typ  
2.0  
2.0  
15  
Max  
7.5  
Units  
mV  
nA  
s
25 C, R 100k  
e
e
e
Input Offset Voltage (Notes 3, 4)  
Input Offset Current (Notes 3, 4)  
Input Bias Current (Note 3)  
Voltage Gain  
T
§
A
S
T
A
T
A
T
A
T
A
25 C  
§
25  
25 C  
§
100  
nA  
e
e
5k  
25 C, R  
§
40  
200  
1.2  
0.4  
V/mV  
ms  
L
e
Response Time (Note 5)  
Saturation Voltage (Note 6)  
25 C  
§
s
b
e
25 mA  
V
T
10 mV, I  
1.5  
V
IN  
OUT  
e
A
25 C  
§
e
Strobe Current (Note 7)  
Output Leakage Current  
T
25 C  
§
100  
200  
0.2  
300  
100  
mA  
A
t
e
OUT  
V
T
10 mV, V  
35V  
nA  
IN  
e
25 C  
§
A
s
Input Offset Voltage (Notes 3, 4)  
Input Offset Current (Notes 3, 4)  
Input Bias Current (Note 3)  
Input Voltage Range  
R
S
100k  
10  
35  
mV  
nA  
nA  
V
150  
Vb 0.5  
Va 1.5  
a
a
b
13.7, 14.7  
b
b
Va 4.5V, V  
0V  
0.1  
0.4  
V
t
e
Saturation Voltage (Note 6)  
s
s
1.6 mA  
b
V
10 mV, I  
IN  
SINK  
e
Positive Supply Current  
Negative Supply Current  
Minimum Operating Voltage  
T
25 C, Output on  
§
150  
80  
300  
180  
3.5  
mA  
mA  
V
A
A
A
e
e
T
T
25 C  
§
25 C  
§
3.0  
g
Note 1: This rating applies for 15V supplies. The positive input voltage limit is 30V above the negative supply. The negative input voltage limit is equal to the  
negative supply voltage or 30V below the positive supply, whichever is less.  
Note 2: The maximum junction temperature of the LP311 is 85 C. For operating at elevated temperatures, devices in the dual-in-line package must be derated  
§
based on a thermal resistance of 160 C/W, junction to ambient.  
§
Note 3: The offset voltage, offset current and bias current specifications apply for any supply voltage from a single 4V supply up to 15V supplies.  
g
Note 4: The offset voltages and offset currents given are the maximum values required to drive the output within a volt of either supply with 1 mA load. Thus, these  
parameters define an error band and take into account the worst-case effects of voltage gain and input impedance.  
Note 5: The response time specified is for a 100 mV input step with 5 mV overdrive.  
a
s
b
3V).  
Note 6: Saturation voltage specification applies to collector-emitter voltage (V7-1) for V  
COLLECTOR  
(V  
Note 7: This specification gives the range of current which must be drawn from the strobe pin to ensure the output is properly disabled. Do not short the strobe pin  
to ground. It should be current driven, 100 mA to 300 mA.  
2
Typical Performance Characteristics  
Input Characteristics  
Input Bias Current  
Input Offset Current  
TL/H/5711–5  
3
Typical Performance Characteristics (Continued)  
Supply Current  
Supply Current  
Leakage Currents  
TL/H/5711–6  
Applications Information  
For applications information and typical applications, refer to the LM311 datasheet.  
Auxiliary Circuits  
Strobing  
Offset Balancing  
TL/H/5711–2  
TL/H/5711–1  
Note: Do not ground strobe pin.  
Test Circuits  
Test Circuit 1 (Collector Output)  
Test Circuit 2 (Emitter Output)  
TL/H/5711–8  
TL/H/5711–9  
Test Circuit 3 (Collector Output)  
Test Circuit 4 (Emitter Output)  
TL/H/571110  
TL/H/571111  
4
Physical Dimensions inches (millimeters)  
Order Number LP311M  
NS Package Number M08A  
5
Physical Dimensions inches (millimeters) (Continued)  
Molded Dual-In-Line Package (N)  
Order Number LP311N  
NS Package Number N08E  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL  
SEMICONDUCTOR CORPORATION. As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant  
into the body, or (b) support or sustain life, and whose  
failure to perform, when properly used in accordance  
with instructions for use provided in the labeling, can  
be reasonably expected to result in a significant injury  
to the user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
National Semiconductor  
Corporation  
National Semiconductor  
Europe  
National Semiconductor  
Hong Kong Ltd.  
National Semiconductor  
Japan Ltd.  
a
1111 West Bardin Road  
Arlington, TX 76017  
Tel: 1(800) 272-9959  
Fax: 1(800) 737-7018  
Fax:  
(
49) 0-180-530 85 86  
@
13th Floor, Straight Block,  
Ocean Centre, 5 Canton Rd.  
Tsimshatsui, Kowloon  
Hong Kong  
Tel: (852) 2737-1600  
Fax: (852) 2736-9960  
Tel: 81-043-299-2309  
Fax: 81-043-299-2408  
Email: cnjwge tevm2.nsc.com  
a
a
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a
Deutsch Tel:  
English Tel:  
Fran3ais Tel:  
Italiano Tel:  
(
(
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(
49) 0-180-530 85 85  
49) 0-180-532 78 32  
49) 0-180-532 93 58  
49) 0-180-534 16 80  
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.  

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