LP3882ESX-1.5 [NSC]

1.5A Fast-Response Ultra Low Dropout Linear; 1.5A快速响应超低压降线性
LP3882ESX-1.5
型号: LP3882ESX-1.5
厂家: National Semiconductor    National Semiconductor
描述:

1.5A Fast-Response Ultra Low Dropout Linear
1.5A快速响应超低压降线性

文件: 总12页 (文件大小:324K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
August 2003  
LP3882  
1.5A Fast-Response Ultra Low Dropout Linear  
Regulators  
General Description  
Features  
@
n Ultra low dropout voltage (110 mV 1.5A typ)  
The LP3882 is a high current, fast response regulator which  
can maintain output voltage regulation with minimum input to  
output voltage drop. Fabricated on a CMOS process, the  
device operates from two input voltages: Vbias provides  
voltage to drive the gate of the N-MOS power transistor,  
while Vin is the input voltage which supplies power to the  
load. The use of an external bias rail allows the part to  
operate from ultra low Vin voltages. Unlike bipolar regula-  
tors, the CMOS architecture consumes extremely low quies-  
cent current at any output load current. The use of an  
n Low ground pin current  
n Load regulation of 0.04%/A  
n 60 nA typical quiescent current in shutdown  
n 1.5% output accuracy (25˚C)  
n TO-220, TO-263 packages  
n Over temperature/over current protection  
n −40˚C to +125˚C junction temperature range  
N-MOS power transistor results in wide bandwidth, yet mini- Applications  
mum external capacitance is required to maintain loop sta-  
bility.  
n DSP Power Supplies  
n Server Core and I/O Supplies  
n PC Add-in-Cards  
n Local Regulators in Set-Top Boxes  
n Microcontroller Power Supplies  
n High Efficiency Power Supplies  
n SMPS Post-Regulators  
The fast transient response of these devices makes them  
suitable for use in powering DSP, Microcontroller Core volt-  
ages and Switch Mode Power Supply post regulators. The  
parts are available in TO-220 and TO-263 packages.  
@
Dropout Voltage: 110 mV (typ) 1.5A load current.  
Ground Pin Current: 3 mA (typ) at full load.  
Shutdown Current: 60 nA (typ) when S/D pin is low.  
Precision Output Voltage: 1.5% room temperature accu-  
racy.  
Typical Application Circuit  
20063201  
At least 4.7 µF of input and output capacitance is required for stability.  
Connection Diagrams  
20063202  
20063203  
TO-220, Top View  
TO-263, Top View  
© 2003 National Semiconductor Corporation  
DS200632  
www.national.com  
Ordering Information  
Order Number  
LP3882ES-1.2  
LP3882ESX-1.2  
LP3882ET-1.2  
LP3882ES-1.5  
LP3882ESX-1.5  
LP3882ET-1.5  
LP3882ES-1.8  
LP3882ESX-1.8  
LP3882ET-1.8  
Package Type  
TO263-5  
TO263-5  
TO220-5  
TO263-5  
TO263-5  
TO220-5  
TO263-5  
TO263-5  
TO220-5  
Package Drawing  
TS5B  
Supplied As  
Rail  
TS5B  
Tape and Reel  
Rail  
T05D  
TS5B  
Rail  
TS5B  
Tape and Reel  
Rail  
T05D  
TS5B  
Rail  
TS5B  
Tape and Reel  
Rail  
T05D  
Block Diagram  
20063224  
www.national.com  
2
Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
IOUT (Survival)  
Internally Limited  
−0.3V to +6V  
Output Voltage (Survival)  
Junction Temperature  
−40˚C to +150˚C  
Storage Temperature Range  
Lead Temp. (Soldering, 5 seconds)  
ESD Rating  
−65˚C to +150˚C  
260˚C  
Operating Ratings  
VIN Supply Voltage  
Shutdown Input Voltage  
IOUT  
(VOUT + VDO) to 5.5V  
0 to +6V  
Human Body Model (Note 3)  
Machine Model (Note 10)  
Power Dissipation (Note 2)  
VIN Supply Voltage (Survival)  
VBIAS Supply Voltage (Survival)  
Shutdown Input Voltage (Survival)  
2 kV  
200V  
1.5A  
Operating Junction  
Temperature Range  
VBIAS Supply Voltage  
−40˚C to +125˚C  
Internally Limited  
−0.3V to +6V  
−0.3V to +7V  
−0.3V to +7V  
4.5V to 6V  
Electrical Characteristics Limits in standard typeface are for TJ = 25˚C, and limits in boldface type apply  
over the full operating temperature range. Unless otherwise specified: VIN = VO(NOM) + 1V, VBIAS = 4.5V, IL = 10 mA, CIN  
=
COUT = 4.7 µF, VS/D = VBIAS  
.
Typical  
(Note 4)  
MIN  
(Note 5)  
1.198  
MAX  
(Note 5)  
1.234  
Symbol  
VO  
Parameter  
Conditions  
Units  
<
<
Output Voltage Tolerance  
10 mA IL 1.5A  
VO(NOM) + 1V VIN 5.5V  
4.5V VBIAS 6V  
1.216  
1.5  
1.186  
1.246  
1.478  
1.522  
V
1.455  
1.545  
1.773  
1.827  
1.8  
1.746  
1.854  
VO/VIN  
VO/IL  
VDO  
Output Voltage Line Regulation  
(Note 7)  
VO(NOM) + 1V VIN 5.5V  
0.01  
%/V  
%/A  
mV  
mA  
µA  
<
<
Output Voltage Load Regulation 10 mA IL 1.5A  
0.04  
(Note 8)  
0.06  
Dropout Voltage (Note 9)  
IL = 1.5A  
170  
270  
7
110  
3
<
<
IQ(VIN  
)
Quiescent Current Drawn from  
VIN Supply  
10 mA IL 1.5A  
8
V
0.3V  
1
S/D  
0.03  
1
30  
2
<
<
IQ(VBIAS  
)
Quiescent Current Drawn from  
VBIAS Supply  
10 mA IL 1.5A  
mA  
3
V
0.3V  
1
S/D  
0.03  
3
µA  
A
30  
ISC  
Short-Circuit Current  
VOUT = 0V  
Shutdown Input  
VSDT  
Output Turn-off Threshold  
Output = ON  
Output = OFF  
RLOAD X COUT  
RLOAD X COUT  
V S/D =1.3V  
0.7  
0.7  
20  
15  
1
1.3  
V
0.3  
<<  
<<  
Td (OFF)  
Td (ON)  
IS/D  
Turn-OFF Delay  
Turn-ON Delay  
S/D Input Current  
Td (OFF)  
Td (ON)  
µs  
µA  
V
0.3V  
−1  
S/D  
3
www.national.com  
Electrical Characteristics Limits in standard typeface are for TJ = 25˚C, and limits in boldface type apply  
over the full operating temperature range. Unless otherwise specified: VIN = VO(NOM) + 1V, VBIAS = 4.5V, IL = 10 mA, CIN  
COUT = 4.7 µF, VS/D = VBIAS. (Continued)  
=
Typical  
(Note 4)  
MIN  
(Note 5)  
MAX  
(Note 5)  
Symbol  
Parameter  
Conditions  
Units  
AC Parameters  
PSRR (VIN  
)
Ripple Rejection for VIN Input  
Voltage  
VIN = VOUT +1V, f = 120 Hz  
80  
65  
70  
VIN = VOUT + 1V, f = 1 kHz  
dB  
PSRR  
Ripple Rejection for VBIAS  
Voltage  
VBIAS = VOUT + 3V, f = 120 Hz  
(VBIAS  
)
VBIAS = VOUT + 3V, f = 1 kHz  
f = 120 Hz  
65  
1
Output Noise Density  
Output Noise Voltage  
VOUT = 1.8V  
µV/root−Hz  
µV (rms)  
en  
BW = 10 Hz − 100 kHz  
BW = 300 Hz − 300 kHz  
150  
90  
Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Operating ratings indicate conditions for which the device  
is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications, see Electrical Characteristics. Specifications do not  
apply when operating the device outside of its rated operating conditions.  
Note 2: At elevated temperatures, device power dissipation must be derated based on package thermal resistance and heatsink thermal values. θ  
for TO-220  
J-A  
devices is 65˚C/W if no heatsink is used. If the TO-220 device is attached to a heatsink, a θ  
value of 4˚C/W can be assumed. θ  
for TO-263 devices is  
J-S  
J-A  
approximately 40˚C/W if soldered down to a copper plane which is at least 1.5 square inches in area. If power dissipation causes the junction temperature to exceed  
specified limits, the device will go into thermal shutdown.  
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5k resistor into each pin.  
Note 4: Typical numbers represent the most likely parametric norm for 25˚C operation.  
Note 5: Limits are guaranteed through testing, statistical correlation, or design.  
Note 6: If used in a dual-supply system where the regulator load is returned to a negative supply, the output pin must be diode clamped to ground.  
Note 7: Output voltage line regulation is defined as the change in output voltage from nominal value resulting from a change in input voltage.  
Note 8: Output voltage load regulation is defined as the change in output voltage from nominal value as the load current increases from no load to full load.  
Note 9: Dropout voltage is defined as the minimum input to output differential required to maintain the output with 2% of nominal value.  
Note 10: The machine model is a 220 pF capacitor discharged directly into each pin. The machine model ESD rating of pin 5 is 100V.  
www.national.com  
4
Typical Performance Characteristics Unless otherwise specified: TA = 25˚C, COUT = 4.7µF, Cin =  
4.7µF, S/D pin is tied to VBIAS, VIN = 2.2V, VOUT = 1.8V.  
Dropout vs IL  
IGND vs VSD  
20063205  
20063204  
VOUT vs Temperature  
DC Load Regulation  
20063206  
20063207  
Line Regulation vs VIN  
Line Regulation vs VBIAS  
20063208  
20063209  
5
www.national.com  
Typical Performance Characteristics Unless otherwise specified: TA = 25˚C, COUT = 4.7µF, Cin =  
4.7µF, S/D pin is tied to VBIAS, VIN = 2.2V, VOUT = 1.8V. (Continued)  
IBIAS vs IL  
IGND vs VSD  
20063212  
20063210  
Noise Measurement  
VOUTStartup Waveform  
20063215  
20063214  
VOUTStartup Waveform  
Line Regulation vs VBIAS  
20063218  
20063216  
www.national.com  
6
Typical Performance Characteristics Unless otherwise specified: TA = 25˚C, COUT = 4.7µF, Cin =  
4.7µF, S/D pin is tied to VBIAS, VIN = 2.2V, VOUT = 1.8V. (Continued)  
Line Regulation vs VBIAS  
VIN PSRR  
20063219  
20063220  
VIN PSRR  
VBIAS PSRR  
20063223  
20063222  
7
www.national.com  
LP388X devices. The regulator output can tolerate ceramic  
capacitance totaling up to 15% of the amount of Tantalum  
capacitance connected from the output to ground.  
Application Hints  
VBIAS RESTRICTIONS FOR PROPER START-UP  
To prevent misoperation, ensure that VBIAS is below 50mV  
before start-up is initiated. This scenario can occur in sys-  
tems with a backup battery using reverse-biased "blocking"  
diodes which may allow enough leakage current to flow into  
the VBIAS node to raise it’s voltage slightly above ground  
when the main power is removed. Using low leakage diodes  
or a resistive pull down can prevent the voltage at VBIAS from  
rising above 50mV. Large bulk capacitors connected to  
VBIAS may also cause a start-up problem if they do not  
discharge fully before re-start is initiated (but only if VBIAS is  
allowed to fall below 1V). A resistor connected across the  
capacitor will allow it to discharge more quickly. It should be  
noted that the probability of a "false start" caused by incor-  
rect logic states is extremely low.  
OUTPUT "BYPASS" CAPACITORS  
Many designers place small value "bypass" capacitors at  
various circuit points to reduce noise. Ceramic capacitors in  
the value range of about 1000pF to 0.1µF placed directly on  
the output of a PNP or P-FET LDO regulator can cause a  
loss of phase margin which can result in oscillations, even  
when a Tantalum output capacitor is in parallel with it. This is  
not unique to National Semiconductor LDO regulators, it is  
true of any P-type LDO regulator.  
The reason for this is that PNP or P-FET regulators have a  
higher output impedance (compared to an NPN regulator),  
which results in a pole-zero pair being formed by every  
different capacitor connected to the output.  
The zero frequency is approximately:  
EXTERNAL CAPACITORS  
Fz = 1 / (2 X π X ESR X C)  
Where ESR is the equivalent series resistance of the capaci-  
tor, and C is the value of capacitance.  
To assure regulator stability, input and output capacitors are  
required as shown in the Typical Application Circuit.  
The pole frequency is:  
OUTPUT CAPACITOR  
Fp = 1 / (2 X π X RL X C)  
Where RL is the load resistance connected to the regulator  
output.  
At least 4.7µF of output capacitance is required for stability  
(the amount of capacitance can be increased without limit).  
The output capacitor must be located less than 1 cm from  
the output pin of the IC and returned to a clean analog  
ground. The ESR (equivalent series resistance) of the output  
capacitor must be within the "stable" range as shown in the  
graph below over the full operating temperature range for  
stable operation.  
To understand why a small capacitor can reduce phase  
margin: assume a typical LDO with a bandwidth of 1MHz,  
which is delivering 0.5A of current from a 2.5V output (which  
means RL is 5 Ohms). We then place a .047 µF capacitor on  
the output. This creates a pole whose frequency is:  
Fp = 1 / (2 X π X 5 X .047 X 10E-6) = 677 kHz  
This pole would add close to 60 degrees of phase lag at the  
crossover (unity gain) frequency of 1 MHz, which would  
almost certainly make this regulator oscillate. Depending on  
the load current, output voltage, and bandwidth, there are  
usually values of small capacitors which can seriously re-  
duce phase margin. If the capacitors are ceramic, they tend  
to oscillate more easily because they have very little internal  
inductance to damp it out. If bypass capacitors are used, it is  
best to place them near the load and use trace inductance to  
"decouple" them from the regulator output.  
INPUT CAPACITOR  
The input capacitor must be at least 4.7 µF, but can be  
increased without limit. It’s purpose is to provide a low  
source impedance for the regulator input. Ceramic capaci-  
tors work best for this, but Tantalums are also very good.  
There is no ESR limitation on the input capacitor (the lower,  
the better). Aluminum electrolytics can be used, but their  
ESR increase very quickly at cold temperatures. They are  
not recommended for any application where temperatures  
go below about 10˚C.  
20063231  
Minimum ESR vs Output Load Current  
Tantalum capacitors are recommended for the output as  
their ESR is ideally suited to the part’s requirements and the  
ESR is very stable over temperature. Aluminum electrolytics  
are not recommended because their ESR increases very  
rapidly at temperatures below 10C. Aluminum caps can only  
be used in applications where lower temperature operation  
is not required.  
BIAS CAPACITOR  
The 0.1µF capacitor on the bias line can be any good quality  
capacitor (ceramic is recommended).  
A second problem with Al caps is that many have ESR’s  
which are only specified at low frequencies. The typical loop  
bandwidth of a linear regulator is a few hundred kHz to  
several MHz. If an Al cap is used for the output cap, it must  
be one whose ESR is specified at a frequency of 100 kHz or  
more.  
BIAS VOLTAGE  
The bias voltage is an external voltage rail required to get  
gate drive for the N-FET pass transistor. Bias voltage must  
be in the range of 4.5 - 6V to assure proper operation of the  
part.  
Because the ESR of ceramic capacitors is only a few milli  
Ohms, they are not suitable for use as output capacitors on  
www.national.com  
8
The heatsink to be used in the application should have a  
heatsink to ambient thermal resistance,  
Application Hints (Continued)  
UNDER VOLTAGE LOCKOUT  
θ
HA≤ θJA θCH θJC.  
The bias voltage is monitored by a circuit which prevents the  
regulator output from turning on if the bias voltage is below  
approximately 4V.  
In this equation, θCH is the thermal resistance from the case  
to the surface of the heat sink and θJC is the thermal resis-  
tance from the junction to the surface of the case. θJC is  
about 3˚C/W for a TO220 package. The value for θCH de-  
pends on method of attachment, insulator, etc. θCH varies  
between 1.5˚C/W to 2.5˚C/W. If the exact value is unknown,  
2˚C/W can be assumed.  
SHUTDOWN OPERATION  
Pulling down the shutdown (S/D) pin will turn-off the regula-  
tor. Pin S/D must be actively terminated through a pull-up  
resistor (10 kto 100 k) for a proper operation. If this pin  
is driven from a source that actively pulls high and low (such  
as a CMOS rail to rail comparator), the pull-up resistor is not  
required. This pin must be tied to Vin if not used.  
HEATSINKING TO-263 PACKAGE  
The TO-263 package uses the copper plane on the PCB as  
a heatsink. The tab of these packages are soldered to the  
copper plane for heat sinking. The graph below shows a  
curve for the θJA of TO-263 package for different copper area  
sizes, using a typical PCB with 1 ounce copper and no solder  
mask over the copper area for heat sinking.  
POWER DISSIPATION/HEATSINKING  
A heatsink may be required depending on the maximum  
power dissipation and maximum ambient temperature of the  
application. Under all possible conditions, the junction tem-  
perature must be within the range specified under operating  
conditions. The total power dissipation of the device is given  
by:  
PD = (VIN−VOUT)IOUT+ (VIN)IGND  
where IGND is the operating ground current of the device.  
The maximum allowable temperature rise (TRmax) depends  
on the maximum ambient temperature (TAmax) of the appli-  
cation, and the maximum allowable junction temperature  
(TJmax):  
TRmax = TJmax− TAmax  
The maximum allowable value for junction to ambient Ther-  
mal Resistance, θJA, can be calculated using the formula:  
θJA = TRmax / PD  
These parts are available in TO-220 and TO-263 packages.  
The thermal resistance depends on amount of copper area  
or heat sink, and on air flow. If the maximum allowable value  
of θJA calculated above is 60 ˚C/W for TO-220 package  
and 60 ˚C/W for TO-263 package no heatsink is needed  
since the package can dissipate enough heat to satisfy these  
requirements. If the value for allowable θJA falls below these  
limits, a heat sink is required.  
20063225  
FIGURE 1. θJA vs Copper (1 Ounce) Area for TO-263  
package  
HEATSINKING TO-220 PACKAGE  
The thermal resistance of a TO220 package can be reduced  
by attaching it to a heat sink or a copper plane on a PC  
board. If a copper plane is to be used, the values of θJA will  
be same as shown in next section for TO263 package.  
9
www.national.com  
Application Hints (Continued)  
As shown in the graph below, increasing the copper area  
beyond 1 square inch produces very little improvement. The  
minimum value for θJA for the TO-263 package mounted to a  
PCB is 32˚C/W.  
Figure 2 shows the maximum allowable power dissipation  
for TO-263 packages for different ambient temperatures,  
assuming θJA is 35˚C/W and the maximum junction tempera-  
ture is 125˚C.  
20063226  
FIGURE 2. Maximum power dissipation vs ambient  
temperature for TO-263 package  
www.national.com  
10  
Physical Dimensions inches (millimeters) unless otherwise noted  
TO220 5-lead, Molded, Stagger Bend Package (TO220-5)  
NS Package Number T05D  
11  
www.national.com  
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)  
TO263 5-Lead, Molded, Surface Mount Package (TO263-5)  
NS Package Number TS5B  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL  
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant  
into the body, or (b) support or sustain life, and  
whose failure to perform when properly used in  
accordance with instructions for use provided in the  
labeling, can be reasonably expected to result in a  
significant injury to the user.  
2. A critical component is any component of a life  
support device or system whose failure to perform  
can be reasonably expected to cause the failure of  
the life support device or system, or to affect its  
safety or effectiveness.  
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Fax: +49 (0) 180-530 85 86  
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National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.  

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