NTE123AP [NTE]

Silicon NPN Transistor Audio Amplifier, Switch (Compl to NTE159); 硅NPN晶体管音频放大器,开关(中文全集,以NTE159 )
NTE123AP
型号: NTE123AP
厂家: NTE ELECTRONICS    NTE ELECTRONICS
描述:

Silicon NPN Transistor Audio Amplifier, Switch (Compl to NTE159)
硅NPN晶体管音频放大器,开关(中文全集,以NTE159 )

晶体 开关 音频放大器 小信号双极晶体管 PC
文件: 总3页 (文件大小:27K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NTE123AP  
Silicon NPN Transistor  
Audio Amplifier, Switch  
(Compl to NTE159)  
Absolute Maximum Ratings:  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V  
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V  
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V  
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA  
Total Device Dissipation (TA = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C  
Total Device Dissipation (TC = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Thermal Resistance, Junction to Case, Rθ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W  
JC  
Thermal Resistance, Junction to Ambient, Rθ  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W  
JA  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
OFF Characteristics  
Symbol  
Test Conditions  
Min Typ Max Unit  
Collector–Emitter Breakdown Voltage  
Collector–Base Breakdown Voltage  
Emitter–Base Breakdown Voltage  
Collector Cutoff Current  
V
I = 1mA, I = 0, Note 1  
40  
60  
6
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
C
B
V
V
I = 0.1mA, I = 0  
C E  
I = 0.1mA, I = 0  
V
E
C
I
V
= 35V, V  
= 0.4V  
= 0.4V  
0.1  
0.1  
µA  
µA  
CEV  
CE  
CE  
EB(off)  
EB(off)  
Base Cutoff Current  
I
V
= 35V, V  
BEV  
ON Characteristics (Note 1)  
DC Current Gain  
h
FE  
V
CE  
V
CE  
V
CE  
V
CE  
V
CE  
= 1V, I = 0.1mA  
20  
40  
C
= 1V, I = 1mA  
C
= 1V, I = 10mA  
80  
C
= 1V, I = 150mA  
100  
40  
300  
C
= 1V, I = 500mA  
C
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.  
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min Typ Max Unit  
ON Characteristics (Note 1) (Cont’d)  
CollectorEmitter Saturation Voltage  
V
V
I = 150mA, I = 15mA  
0.4  
0.75  
0.95  
1.2  
V
V
V
V
CE(sat)  
C
B
I = 500mA, I = 50mA  
C
B
BaseEmitter Saturation Voltage  
I = 150mA, I = 15mA  
0.75  
BE(sat)  
C
B
I = 500mA, I = 50mA  
C
B
Small–Signal Characteristics  
Current GainBandwidth Product  
CollectorBase Capacitance  
EmitterBase Capacitance  
Input Impedance  
f
I = 20mA, V = 10V, f = 100MHz  
250  
MHz  
pF  
T
C
CE  
C
C
V
= 5V, I = 0, f = 100kHz  
6.5  
30  
15  
cb  
CB  
CB  
E
V
= 0.5V, I = 0, f = 100kHz  
pF  
eb  
C
h
I = 1mA, V = 10V, f = 1kHz  
1.0  
0.1  
40  
1.0  
kΩ  
ie  
re  
fe  
C
CE  
6  
Voltage Feedback Ratio  
SmallSignal Current Gain  
Output Admittance  
h
h
I = 1mA, V = 10V, f = 1kHz  
8.0 x 10  
500  
C
CE  
I = 1mA, V = 10V, f = 1kHz  
C
CE  
h
oe  
I = 1mA, V = 10V, f = 1kHz  
30 µmhos  
C
CE  
Switching Characteristics  
Delay Time  
t
15  
20  
ns  
ns  
ns  
ns  
V
C
= 30V, V  
= 2V,  
d
CC  
EB(off)  
B1  
I = 150mA, I = 15mA  
Rise Time  
t
r
Storage Time  
t
225  
30  
V
B1  
= 30V, I = 150mA,  
s
CC  
C
I
= I = 15mA  
B2  
Fall Time  
t
f
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.  
.135 (3.45) Min  
.210  
(5.33)  
Max  
Seating Plane  
.021 (.445) Dia Max  
.500  
(12.7)  
Min  
E B C  
.100 (2.54)  
.050 (1.27)  
.165  
(4.2)  
Max  
.105 (2.67) Max  
.205 (5.2) Max  
.105 (2.67) Max  

相关型号:

ETC

NTE124

Silicon NPN Transistor High Voltage Power Output
NTE

NTE1240

Integrated Circuit Audio Power Amp, 5.5W
NTE

NTE1241

Integrated Circuit Head Coil/Meter Driver
NTE

NTE1242

Integrated Circuit FM/AM IF Amp, AM Converter
NTE

NTE1245

Consumer IC
ETC

NTE1246

Consumer IC
ETC

NTE1247

Consumer IC
ETC

NTE1248

Integrated Circuit Phase Lock Loop (PLL) FM Multiplex Stereo Demod
NTE

NTE1249

Integrated Circuit Balancd Modulator
NTE

NTE125

General Purpose Silicon Rectifier
NTE

NTE1250

Consumer IC,
NTE