NTE2304 [NTE]
Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314); 硅NPN晶体管高电流，高速开关（中文全集，以NTE2314 ）
| 型号： | NTE2304 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314) |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2304
Silicon NPN Transistor
High Current, High Speed Switch
(Compl to NTE2314)
Description:
The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay
drivers, high–speed inverters, converters, and other general high–current switching applications.
Features:
D Low Collector–Emitter Saturation Voltage
D Wide ASO and Resistant to Breakdowns
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Allowable Collector Dissipation (TC = +25°C ), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Ambient Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Test Conditions
Min
–
Typ Max Unit
I
V
V
V
V
V
= 40V, I = 0
–
–
0.1
0.1
200
–
mA
mA
CBO
CB
EB
CE
CE
CE
E
I
= 4V, I = 0
–
EBO
C
h
FE
= 2V, I = 1A
100
30
–
–
C
= 2V, I = 8A
–
C
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Turn–On Time
f
T
= 5V, I = 1A
20
0.18
–
–
MHz
V
C
V
I = 8A, I = 0.4A
–
0.4
–
CE(sat)
C
B
V
V
V
I = 1mA, I = 0
60
50
6
V
(BR)CBO
(BR)CBO
(BR)EBO
C
E
I = 1mA, R = ∞
–
–
V
C
BE
I = 1mA, I = 0
–
–
V
E
C
t
on
–
0.2
1.0
0.1
–
µs
µs
µs
10I = –10I = I = 2A,
B1
B2
C
PW = 20µs
Storage Time
t
stg
–
–
Fall Time
t
f
–
–
.190 (4.82)
.615 (15.62)
C
.787
(20.0)
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B
C
E
.215 (5.47)
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