NTE2371 [NTE]
MOSFET P-Ch, Enhancement Mode High Speed Switch; MOSFET P沟道，增强型高速开关
| 型号： | NTE2371 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | MOSFET P-Ch, Enhancement Mode High Speed Switch |
| 文件： | 总3页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2371
MOSFET
P–Ch, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D P–Channel
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A
Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Gate–to–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19A
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C
Mounting Torque (6–32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfꢀ in (1.1Nꢀ m)
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5°C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. VDD = 25V, starting TJ = +25°C, L = 2.7mH, RG = 25Ω, IAS = 19A
Note 3. ISD ≤ 19A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, TJ ≤ +175°C
Note 4. Pules Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–to–Source Breakdown Voltage
V
V
= 0V, I = 250µA
100
–
–
–
V
(BR)DSS
GS
D
Breakdown Voltage Temp. Coefficient ∆V
Reference to +25°C, I = 1mA
–
0.087
V/°C
(BR)DSS
D
∆T
J
Static Drain–to–Source On–Resistance
Gate Threshold Voltage
R
V
V
V
V
V
V
V
= 10V, I = 11A, Note 4
–
2.0
6.2
–
–
–
0.20
4.0
–
Ω
V
DS(on)
GS
DS
DS
DS
DS
GS
GS
D
V
= V , I = 250µA
GS D
GS(th)
Forward Transconductance
g
fs
= 50V, I = 11A, Note4
–
mhos
µA
µA
nA
nA
nC
nC
nC
ns
D
Drain–to–Source Leakage Current
I
= 100V, V = 0V
–
100
500
–100
100
61
14
29
–
DSS
GS
= 80V, V = 0V, T = +150°C
–
–
GS
J
Gate–to–Source Forward Leakage
Gate–to–Source Reverse Leakage
Total Gate Charge
I
= –20V
–
–
GSS
I
= 20V
–
–
GSS
Q
g
–
–
I = 19A, V = 80V, V = 10V,
D
DS
GS
Note 4
Gate–to–Source Charge
Gate–to–Drain (“Miller”) Charge
Turn–On Delay Time
Q
–
–
gs
gd
Q
–
–
t
–
16
73
34
57
4.5
7.5
1400
590
140
V
DD
= 50V, I = 19A, R = 9.1Ω,
D G
d(on)
R = 2.4Ω, Note 4
D
Rise Time
t
r
–
–
ns
Turn–Off Delay Time
t
–
–
ns
d(off)
Fall Time
t
f
–
–
ns
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
L
D
–
–
nH
nH
pF
pF
pF
Between lead, .250in. (6.0) mm from
package and center of die contact
L
S
–
–
C
iss
–
–
V
GS
= 0V, V = 25V, f = 1MHz
DS
Output Capacitance
C
–
–
oss
Reverse Transfer Capaticance
C
–
–
rss
Source–Drain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
I
–
–
–
–
–
–
19
72
A
A
V
S
I
Note 1
SM
V
SD
T = +25°C, I = 3.5A, V = 0V,
5.0
J
S
GS
Note 3
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
t
–
–
130 260
0.35 0.70
ns
T = +25°C, I = 3.5A,
di/dt = 100A/µs, Note 3
rr
J
F
Q
µC
rr
t
on
Intrinsic turn–on time is neglegible (turn–on is dominated by L +L )
S D
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width ≤ 300µs; duty cycle ≤ 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75) Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
Source
Drain/Tab
.100 (2.54)
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