NTE2546 [NTE]
Silicon Complementary Transistors Darlington, High Speed Driver; 互补硅达林顿晶体管，高速驱动器
| 型号： | NTE2546 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors Darlington, High Speed Driver |
| 文件： | 总2页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2545 (NPN) & NTE2546 (PNP)
Silicon Complementary Transistors
Darlington, High Speed Driver
Features:
D High Speed Switching
D Wide ASO Range
D High Gain Bandwidth Product
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 40V, IE = 0
Min Typ Max Unit
–
–
–
–
0.1
3.0
–
mA
mA
IEBO
VEB = 5V, IC = 0
hFE
VCE = 2V, IC = 2.5A
VCE = 5V, IC = 2.5A
2000 5000
Gain–Bandwidth Product
fT
–
200
–
MHz
V
Collector Emitter Saturation Volt-
VCE(sat)
age
IC = 2.5A, IB = 5mA
–
0.9
–
NTE2545
NTE2546
–
–
1.0
–
1.5
2.0
–
V
V
V
V
Base Emitter Saturation Voltage
VBE(sat) IC = 2.5A, IB = 5mA
Collector Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0
70
60
–
Collector Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = ∞
–
–
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Turn–On Time
Symbol
ton
Test Conditions
Min Typ Max Unit
–
0.3
–
µs
VCC = 20V, VBE = –5V,
500IB1 = –500IB2 = IC = 2A,
Pulse Width = 50µs,
Storage Time
NTE2545
tstg
–
–
–
1.2
1.3
0.2
–
–
–
µs
µs
µs
Duty Cycle ≤ 1%, Note 1
NTE2546
Fall Time
tf
Note 1. For NTE2546, the polarity is reversed.
NTE2545
(NPN)
.420 (10.67)
Max
C
B
.110 (2.79)
E
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
NTE2546
(PNP)
.500
(12.7)
Min
.070 (1.78) Max
Base
C
E
Emitter
Collector/Tab
B
.100 (2.54)
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