NTE2561 [NTE]
Silicon NPN Transistor Video Amplifier; 硅NPN晶体管视频放大器
| 型号： | NTE2561 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor Video Amplifier |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2561
Silicon NPN Transistor
Video Amplifier
Features:
D High Gain–Bandwidth Product
D High Breakdown Voltage
D Large Current
D Small Reverse Transfer Capacitance
Applications:
D Wide–Band Amplifiers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak (Pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Test Conditions
Min Typ Max Unit
I
V
V
V
V
V
V
V
= 80V, I = 0
–
–
–
–
0.1
5.0
200
–
µA
µA
CBO
CB
EB
CE
CE
CE
CB
CB
E
I
= 2V, I = 0
C
EBO
h
FE
= 10V, I = 50mA
30
20
–
–
C
= 10V, I = 100mA
–
C
Gain–Bandwidth Product
f
T
= 10V, I = 100mA
1.2
4.4
3.8
–
–
GHz
pF
pF
V
C
Output Capacitance
C
ob
= 30V, f = 1MHz
= 30V, f = 1MHz
–
–
Reverse Transfer Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
C
–
–
re
CE(sat)
V
I = 300mA, I = 30mA
–
0.6
1.2
–
C
B
V
BE(sat)
I = 300mA, I = 30mA
–
–
V
C
B
V
I = 10µA, I = 0
100
80
3
–
V
(BR)CBO
C
E
V
I = 1mA, R = ∞
–
–
V
(BR)CEO
C
BE
V
I = 100µA, I = 0
–
–
V
(BR)EBO
E
C
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
Emitter
Collector/Tab
.100 (2.54)
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