NTE2673 [NTE]

Transistor,;
NTE2673
型号: NTE2673
厂家: NTE ELECTRONICS    NTE ELECTRONICS
描述:

Transistor,

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NTE2673 (NPN) & NTE2674 (PNP)  
Silicon Complementary Transistors  
General Purpose Power  
TO220FP Type Package  
Features:  
D Low CollectorEmitter Saturation Voltage: VCD(sat) = 0.5V Typ (IC/IB = 2A/0.2A)  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V  
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A  
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A  
Collector Power Dissipation (TC = +25°C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C  
Note 1. Single pulse: Pulse Width = 10ms.  
Note 2. Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger.  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min Typ Max Unit  
CollectorBase Breakdown Voltage  
CollectorEmitter Breakdown Voltage  
EmitterBase Breakdown Voltage  
Collector Cutoff Current  
V
I = 50μA  
60  
50  
5
1
1
V
V
(BR)CBO  
C
V
I = 1mA  
C
(BR)CEO  
V
I = 50μA  
E
V
(BR)EBO  
I
V
V
= 40V  
= 4V  
μA  
μA  
V
CBO  
CE  
Emitter Cutoff Current  
I
EBO  
EB  
CollectorEmitter Saturation Voltage  
DC Current Transfer Ratio  
Transition Frequency  
V
I = 2A, I = 200mA, Note 3  
0.5 1.0  
CE(sat)  
C
B
h
FE  
I = 500mA, V = 3V, Note 3  
C
60  
320  
CE  
f
T
I = -500mA, V = 5V, f = 30MHz, Note 3  
E CE  
90  
40  
MHz  
pF  
Output Capacitance  
C
ob  
V
CB  
= 10V, I = 0A, f = 1MHz  
test  
E
Note 3. Measured using pulse current.  
.394 (10.0)  
.276 (7.0)  
.177 (4.5)  
.110 (2.8)  
.071 (1.8)  
.669  
(17.0)  
.472  
(12.0)  
B
C
E
.532  
(13.5)  
Min  
.100 (2.54)  
.102 (2.6)  

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