NTE285 [NTE]
Silicon Complementary Transistors Audio Amplifier Output; 硅互补晶体管音频放大器输出
| 型号： | NTE285 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors Audio Amplifier Output |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE284 (NPN) & NTE285 (PNP)
Silicon Complementary Transistors
Audio Amplifier Output
Description:
The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type
package designed for use in power amplifier applications.
Applications:
D Recommended for 100W High–Fidelity Audio Frequency Amplifier Output Stage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
Condition
VCB = 90V, IE = 0
VEB = 5V, IC = 0
Min Typ Max Unit
–
–
–
–
–
–
–
–
–
6
100 µA
100 µA
IEBO
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 0.1A, IB = 0
Emitter–Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0
180
5
–
–
V
V
DC Current Gain
hFE
VCE = 5V, IC = 2A
70
–
140
3.0
2.5
–
V
Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 1A
V
Base to Emitter Voltage
VBE
fT
VCE = 5V, IC = 10A
VCE = 5V, IC = 2A
–
V
Current Gain Bandwidth Product
–
MHZ
Output Capacitance
NTE284
Cob
VCB = 10V, IE = 0, f = 1MHZ
–
–
300
450
–
–
pF
pF
NTE285
Note 1. NTE284MP is a matched pair of NTE284 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 2. NTE285MP is a matched pair of NTE285 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 3. NTE285MCP is a matched complementary pair containing 1 each of NTE284 (NPN) and
NTE285 (PNP).
.135 (3.45) Max
.875 (22.2)
.350 (8.89)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/Case
Base
相关型号：
NTE289AMP
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
NTE
©2020 ICPDF网 联系我们和版权申明