NTE2957 [NTE]
MOSFET N-Channel, Enhancement Mode High Speed Switch; MOSFET N沟道增强模式的高速开关
| 型号： | NTE2957 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | MOSFET N-Channel, Enhancement Mode High Speed Switch |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2957
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D SMPS
D DC–DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, Rth(ch–c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.17°C/W
Isolation Voltage, VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Electrical Characteristics: (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage
Gate–Source Breakdown Voltage
Gate–Source Leakage
V
V
DS
V
DS
V
GS
V
DS
V
DS
V
GS
V
GS
V
GS
= 0V, I = 1mA
700
±30
–
–
–
–
–
V
V
(BR)DSS
D
V
= 0V, I = ±100µA
G
(BR)GSS
I
= ±25V, V = 0V
–
±10
1.0
4.0
2.6
5.2
–
µA
mA
V
GSS
DS
Zero Gate Voltage Drain Current
Gate Threshold Voltage
I
= 700V, V = 0
–
–
DSS
GS
V
= 10V, I = 1mA
2.0
–
3.0
2.0
4.0
4.2
GS(th)
D
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
R
= 10V, I = 2A
Ω
DS(on)
D
V
= 10V, I = 2A
–
V
DS(on)
D
|y |
fs
= 10V, I = 2A
2.5
S
D
Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified)
Parameter
Input Capacitance
Symbol
Test Conditions
Min Typ Max Unit
C
iss
V
= 0V, V = 25V, f = 1MHz
–
–
–
–
–
–
–
–
770
88
16
15
18
90
25
1.0
–
–
pF
pF
pF
ns
ns
ns
ns
V
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
C
oss
C
rss
–
t
–
V
= 200V I = 2A, V = 10V,
d(on)
DD
R
, D
GS
= R = 50Ω
GEN
GS
t
r
–
Turn–Off Delay Time
Fall Time
t
–
d(off)
t
f
–
Diode Forward Voltage
V
SD
I = 2A, V = 0V
1.5
S
GS
.126 (3.2) Dia Max
.181 (4.6)
Max
.405 (10.3)
Max
.114 (2.9)
Isol
.252
(6.4)
.622
(15.0)
Max
G
D
S
.118
(3.0)
Max
.531
(13.5)
Min
.098 (2.5)
.100 (2.54)
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