NTE379 [NTE]
Silicon NPN Transistor Power Amp, High Voltage, Switch; 硅NPN晶体管功率放大器，高电压，开关
| 型号： | NTE379 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor Power Amp, High Voltage, Switch |
| 文件： | 总3页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE379
Silicon NPN Transistor
Power Amp, High Voltage, Switch
Description:
The NTE379 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–
speed power switching inductive circuits where fall time is critical. This device is particularly suited
for 115 and 220V switch–mode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers, and Deflection circuits.
Features:
D VCEO(sus) = 400V
D Reverse Bias SOA with Inductive Loads @ TC = +100°C
D 700V Blocking Capability
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Emitter Current, IE
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Lead Temperature (During Soldering, 1/8” from case for 5sec), TL . . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
V
I = 10mA, I = 0
400
–
–
–
–
–
1
5
V
CEO(sus)
C
B
I
V
CEV
= 700V, V
= 1.5V
= 1.5V,
mA
mA
CEV
BE(off)
BE(off)
V
CEV
= 700V, V
–
T = +100°C
C
Emitter Cutoff Current
ON Characteristics (Note 2)
DC Current Gain
I
V
= 9V, I = 0
–
–
1
mA
EBO
EB
C
h
I = 5A, V = 5V
C
8
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
40
30
FE
CE
I = 8A, V = 5V
C
CE
Collector–Emitter Saturation Voltage
V
V
I = 5A, I = 1A
C
1.0
1.5
3.0
2.0
1.2
1.6
1.5
V
V
V
V
V
V
V
CE(sat)
B
I = 8A, I = 1.6A
C
B
I = 12A, I = 3A
C
B
I = 8A, I = 1.6A, T = +100°C
C
B
C
Base–Emitter Saturation Voltage
I = 5A, I = 1A
C
BE(sat)
B
I = 8A, I = 1.6A
C
B
I = 8A, I = 1.6A, T = +100°C
C
B
C
Dynamic Characteristics
Current Gain–Bandwidth Product
Output Capacitance
Switching Characteristics
Resistive Load
f
I = 500mA, V = 10V, f = 1MHz
4
–
–
–
MHz
pF
T
C
CE
C
V
CB
= 10V, I = 0, f = 0.1MHz
–
180
ob
E
Delay Time
t
t
–
–
–
–
0.06
0.45
1.3
0.1
1.0
3.0
0.7
µs
µs
µs
µs
d
V
= 125V, I = 8A,
Rise Time
t
r
CC
C
I
= I = 1.6A, t = 25µs,
B1
B2 p
Storage Tme
s
Duty Cycle ≤ 1%
Fall Time
t
0.2
f
Inductive Load, Clamped
Voltage Storage Time
Crossover Time
t
–
–
0.92
0.12
2.3
0.7
µs
µs
sv
I = 8A, V
= 300V, I = 1.6A,
B1
C
C
clamp
V
BE(off)
= 5V, T = +100°C
t
c
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
Emitter
Collector/Tab
.100 (2.54)
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