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20020111-H052A01LF  2TL1-6  3547S-2BC-502B  20020111-G142A01LF  20020111-H061A01LF  20020111-H023A01LF  20020111-H07082A01LF  20020111-G07082A01LF  3547S-2AA-502B  20020111-H033A01LF  
NTE5444 Silicon Controlled Rectifier (SCR) 8 Amp
Prototype PCB
Part No.:   NTE5444
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Description:   Silicon Controlled Rectifier (SCR) 8 Amp
File Size :   25 K    
Page : 2 Pages
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NTE5442 thru NTE5448
Silicon Controlled Rectifier (SCR)
8 Amp
Description:
The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package de-
signed for high–volume consumer phase–control applications such as motor speed, temperature,
and light controls, and for fast switching applications in ignition and starting systems, voltage regula-
tors, vending machines, and lamp drivers.
Features:
D
Small, Rugged Construction
D
Practical Level Triggering and Holding Characteristics @ +25°C:
I
GT
= 7mA Typ
I
Hold
= 6mA Typ
D
Low “ON” Voltage: V
TM
= 1V Typ @ 5A @ +25°C
D
High Surge Current Rating: I
TSM
= 80A
Absolute Maximum Ratings:
(Note 1, T
J
= +100°C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 2), V
DRM
or V
RRM
NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Non–Repetitive Peak Reverse Blocking Voltage (t = 5ms (max) duration), V
RSM
NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
RMS On–State Current (All Conduction Angles), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Average On–State Current (T
C
= +73°C), I
T(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1A
Peak Non–Repetitive Surge Current, I
TSM
(1/2 cycle, 60Hz preceeded and followed by rated current and voltage) . . . . . . . . . . . . . 80A
Circuit Fusing (T
J
= –40° to +100°C, t = 1ms to 8.3ms), I
2
t . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
2
sec
Peak Gate Power, P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Peak Forward Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Reverse Gate Voltage, V
RGM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Maximum Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Typical Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Note 1.
NTE5444
and
NTE5446
are
discontinued
devices and are replaced by
NTE5448.
Note 2. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied
concurrently with a negative potential on the anode. When checking forward or reverse
blocking capability, thyristor devices should not be tested with a constant current source in
a manner that the voltage applied exceeds the rated blocking voltage.
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