NTE5444 [NTE]

Silicon Controlled Rectifier (SCR) 8 Amp; 可控硅整流器( SCR) 8安培
NTE5444
元器件型号: NTE5444
生产厂家: NTE ELECTRONICS    NTE ELECTRONICS
描述和应用:

Silicon Controlled Rectifier (SCR) 8 Amp
可控硅整流器( SCR) 8安培

栅极触发装置可控硅整流器局域网
PDF文件: 总2页 (文件大小:25K)
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型号参数:NTE5444参数
是否Rohs认证 不符合
生命周期Active
IHS 制造商NTE ELECTRONICS INC
包装说明FLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN代码EAR99
HTS代码8541.30.00.80
风险等级2.4
Is SamacsysN
其他特性SENSITIVE GATE
外壳连接ANODE
配置SINGLE
最大直流栅极触发电流30 mA
最大直流栅极触发电压1.5 V
最大维持电流40 mA
JEDEC-95代码TO-127
JESD-30 代码R-PSFM-T3
JESD-609代码e0
通态非重复峰值电流80 A
元件数量1
端子数量3
最大通态电流8000 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
认证状态Not Qualified
最大均方根通态电流8 A
断态重复峰值电压200 V
重复峰值反向电压200 V
子类别Silicon Controlled Rectifiers
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子位置SINGLE
触发设备类型SCR
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
NTE5442 thru NTE5448
Silicon Controlled Rectifier (SCR)
8 Amp
Description:
The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package de-
signed for high–volume consumer phase–control applications such as motor speed, temperature,
and light controls, and for fast switching applications in ignition and starting systems, voltage regula-
tors, vending machines, and lamp drivers.
Features:
D
Small, Rugged Construction
D
Practical Level Triggering and Holding Characteristics @ +25°C:
I
GT
= 7mA Typ
I
Hold
= 6mA Typ
D
Low “ON” Voltage: V
TM
= 1V Typ @ 5A @ +25°C
D
High Surge Current Rating: I
TSM
= 80A
Absolute Maximum Ratings:
(Note 1, T
J
= +100°C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 2), V
DRM
or V
RRM
NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Non–Repetitive Peak Reverse Blocking Voltage (t = 5ms (max) duration), V
RSM
NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
RMS On–State Current (All Conduction Angles), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Average On–State Current (T
C
= +73°C), I
T(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1A
Peak Non–Repetitive Surge Current, I
TSM
(1/2 cycle, 60Hz preceeded and followed by rated current and voltage) . . . . . . . . . . . . . 80A
Circuit Fusing (T
J
= –40° to +100°C, t = 1ms to 8.3ms), I
2
t . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
2
sec
Peak Gate Power, P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Peak Forward Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Reverse Gate Voltage, V
RGM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Maximum Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Typical Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Note 1.
NTE5444
and
NTE5446
are
discontinued
devices and are replaced by
NTE5448.
Note 2. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied
concurrently with a negative potential on the anode. When checking forward or reverse
blocking capability, thyristor devices should not be tested with a constant current source in
a manner that the voltage applied exceeds the rated blocking voltage.
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
Peak Forward or Reverse
Blocking Current
Gate Trigger Current
(Continuous DC)
Gate Trigger Voltage
(Continuous DC)
Symbol
I
DRM
,
I
RRM
I
GT
V
GT
Test Conditions
Rated V
DRM
or V
RRM
,
Gate Open
V
D
= 7V, R
L
= 100Ω
V
D
= 7V, R
L
= 100Ω
T
J
= +25°C
T
J
= +100°C
T
C
= +25°C
T
C
= –40°C
T
C
= +25°C
T
C
= –40°C
V
D
= Rated V
DRM
, R
L
= 100Ω, T
J
= +100°C
Peak On–State Voltage
V
TM
I
Hold
t
gt
t
q
dv/dt
Pulse Width = 1ms to 2 ms, I
TM
= 5A
peak
Duty Cycle
2%
I
TM
= 15.7A
peak
V
D
= 7V, Gate Open
T
C
= +25°C
T
C
= –40°C
Gate Controlled Turn–On Time
Circuit Commutated Turn–Off
Time
Critical Rate–of–Rise of
Off–State Voltage
I
TM
= 5A, I
GT
= 20mA, V
D
= Rated V
DRM
I
TM
= 5A, I
R
= 5A
T
J
= +100°C
V
D
= Rated V
DRM
, Exponential Waveform,
T
J
= +100°C, Gate Open
Min
0.2
Typ
7
0.75
1.0
6
1
15
20
50
Max
10
2
30
60
1.5
2.5
1.5
2.0
40
70
Unit
µA
mA
mA
mA
V
V
V
V
V
mA
mA
µs
µs
µs
V/µs
Holding Current
.530 (13.4) Max
.143 (3.65) Dia Thru
.668
(17.0)
Max
K
G
.655
(16.6)
Max
.166 (4.23)
A (Heat Sink Area)
Heat Sink Contact
Area (Bottom)
.150 (3.82) Max
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