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NTE5444

更新时间：2025-07-01 03:15:59
品牌：NTE
描述：Silicon Controlled Rectifier (SCR) 8 Amp

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NTE5444 概述

Silicon Controlled Rectifier (SCR) 8 Amp 可控硅整流器（ SCR） 8安培 可控硅整流器

NTE5444 规格参数

是否Rohs认证： 不符合生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.30.00.80
风险等级：2.4Is Samacsys：N
其他特性：SENSITIVE GATE外壳连接：ANODE
配置：SINGLE最大直流栅极触发电流：30 mA
最大直流栅极触发电压：1.5 V最大维持电流：40 mA
JEDEC-95代码：TO-127JESD-30 代码：R-PSFM-T3
JESD-609代码：e0通态非重复峰值电流：80 A
元件数量：1端子数量：3
最大通态电流：8000 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
认证状态：Not Qualified最大均方根通态电流：8 A
断态重复峰值电压：200 V重复峰值反向电压：200 V
子类别：Silicon Controlled Rectifiers表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE触发设备类型：SCR
Base Number Matches：1

NTE5444 数据手册

通过下载NTE5444数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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NTE5442 thru NTE5448  
Silicon Controlled Rectifier (SCR)  
8 Amp  
Description:  
The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package de-  
signed for high–volume consumer phase–control applications such as motor speed, temperature,  
and light controls, and for fast switching applications in ignition and starting systems, voltage regula-  
tors, vending machines, and lamp drivers.  
Features:  
D Small, Rugged Construction  
D Practical Level Triggering and Holding Characteristics @ +25°C:  
IGT = 7mA Typ  
IHold = 6mA Typ  
D Low “ON” Voltage: VTM = 1V Typ @ 5A @ +25°C  
D High Surge Current Rating: ITSM = 80A  
Absolute Maximum Ratings: (Note 1, TJ = +100°C unless otherwise specified)  
Peak Repetitive Forward and Reverse Blocking Voltage (Note 2), VDRM or VRRM  
NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V  
NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V  
NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V  
Non–Repetitive Peak Reverse Blocking Voltage (t = 5ms (max) duration), VRSM  
NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V  
NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V  
NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V  
NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V  
RMS On–State Current (All Conduction Angles), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A  
Average On–State Current (TC = +73°C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1A  
Peak Non–Repetitive Surge Current, ITSM  
(1/2 cycle, 60Hz preceeded and followed by rated current and voltage) . . . . . . . . . . . . . 80A  
Circuit Fusing (TJ = –40° to +100°C, t = 1ms to 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A2sec  
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W  
Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW  
Peak Forward Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A  
Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C  
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W  
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W  
Note 1. NTE5444 and NTE5446 are discontinued devices and are replaced by NTE5448.  
Note 2. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied  
concurrently with a negative potential on the anode. When checking forward or reverse  
blocking capability, thyristor devices should not be tested with a constant current source in  
a manner that the voltage applied exceeds the rated blocking voltage.  
Electrical Characteristics: (TC = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
T = +25°C  
Min Typ Max Unit  
–
–
–
–
7
–
10  
2
µA  
mA  
mA  
mA  
V
Peak Forward or Reverse  
Blocking Current  
I
,
Rated V  
or V  
,
J
DRM  
DRM  
Gate Open  
RRM  
I
RRM  
T = +100°C  
J
I
T = +25°C  
C
–
30  
60  
Gate Trigger Current  
(Continuous DC)  
V = 7V, R = 100Ω  
GT  
D
L
T = –40°C  
C
–
V
GT  
V = 7V, R = 100Ω  
T = +25°C  
C
–
0.75 1.5  
Gate Trigger Voltage  
(Continuous DC)  
D
L
T = –40°C  
C
–
–
–
2.5  
–
V
V = Rated V  
D
, R = 100Ω, T = +100°C  
0.2  
–
V
DRM  
L
J
Peak On–State Voltage  
Holding Current  
V
TM  
I
= 5A  
peak  
1.0  
–
1.5  
2.0  
40  
70  
–
V
Pulse Width = 1ms to 2 ms,  
Duty Cycle ≤ 2%  
TM  
I
= 15.7A  
–
V
TM  
peak  
I
V = 7V, Gate Open  
T = +25°C  
C
–
6
mA  
mA  
µs  
µs  
µs  
V/µs  
Hold  
D
T = –40°C  
C
–
–
Gate Controlled Turn–On Time  
t
gt  
I
= 5A, I = 20mA, V = Rated V  
DRM  
–
1
TM  
GT  
D
t
q
I
= 5A, I = 5A  
–
15  
20  
50  
–
Circuit Commutated Turn–Off  
TM  
R
Time  
T = +100°C  
J
–
–
Critical Rate–of–Rise of  
Off–State Voltage  
dv/dt V = Rated V  
, Exponential Waveform,  
DRM  
–
–
D
J
T = +100°C, Gate Open  
.530 (13.4) Max  
.143 (3.65) Dia Thru  
.668  
(17.0)  
Max  
K
G
.655  
(16.6)  
Max  
.166 (4.23)  
A (Heat Sink Area)  
Heat Sink Contact  
Area (Bottom)  
.150 (3.82) Max  

NTE5444 替代型号

型号 制造商 描述 替代类型 文档
NTE5454 NTE Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate 功能相似
NTE5455 NTE Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate 功能相似
NTE5417 NTE Silicon Controlled Rectifier (SCR) 10 Amp 功能相似

NTE5444 相关器件

型号 制造商 描述 价格 文档
NTE5446 NTE Silicon Controlled Rectifier (SCR) 8 Amp 获取价格
NTE5448 NTE Silicon Controlled Rectifier (SCR) 8 Amp 获取价格
NTE5452 NTE Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate 获取价格
NTE5453 NTE Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate 获取价格
NTE5454 NTE Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate 获取价格
NTE5455 NTE Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate 获取价格
NTE5456 NTE Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate 获取价格
NTE5457 NTE Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate 获取价格
NTE5458 NTE Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate 获取价格
NTE546 NTE Rectifier Diode, 1 Element, 0.4A, 12000V V(RRM), Silicon 获取价格

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