NTE5444 [NTE]

NTE5442 thru NTE5448

Silicon Controlled Rectifier (SCR)

8 Amp

Description:

The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package de-

signed for high–volume consumer phase–control applications such as motor speed, temperature,

and light controls, and for fast switching applications in ignition and starting systems, voltage regula-

tors, vending machines, and lamp drivers.

Features:

D

Small, Rugged Construction

D

Practical Level Triggering and Holding Characteristics @ +25°C:

I

GT

= 7mA Typ

I

Hold

= 6mA Typ

D

Low “ON” Voltage: V

TM

= 1V Typ @ 5A @ +25°C

D

High Surge Current Rating: I

TSM

= 80A

Absolute Maximum Ratings:

(Note 1, T

J

= +100°C unless otherwise specified)

Peak Repetitive Forward and Reverse Blocking Voltage (Note 2), V

DRM

or V

RRM

NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

Non–Repetitive Peak Reverse Blocking Voltage (t = 5ms (max) duration), V

RSM

NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V

NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V

NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V

NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V

RMS On–State Current (All Conduction Angles), I

T(RMS)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A

Average On–State Current (T

C

= +73°C), I

T(AV)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1A

Peak Non–Repetitive Surge Current, I

TSM

(1/2 cycle, 60Hz preceeded and followed by rated current and voltage) . . . . . . . . . . . . . 80A

Circuit Fusing (T

J

= –40° to +100°C, t = 1ms to 8.3ms), I

2

t . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A

2

sec

Peak Gate Power, P

GM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W

Average Gate Power, P

G(AV)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW

Peak Forward Gate Current, I

GM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Peak Reverse Gate Voltage, V

RGM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V

Operating Junction Temperature Range, T

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C

Maximum Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W

Typical Thermal Resistance, Junction–to–Ambient, R

thJA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W

Note 1.

NTE5444

and

NTE5446

are

discontinued

devices and are replaced by

NTE5448.

Note 2. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied

concurrently with a negative potential on the anode. When checking forward or reverse

blocking capability, thyristor devices should not be tested with a constant current source in

a manner that the voltage applied exceeds the rated blocking voltage.

Electrical Characteristics:

(T

C

= +25°C unless otherwise specified)

Parameter

Peak Forward or Reverse

Blocking Current

Gate Trigger Current

(Continuous DC)

Gate Trigger Voltage

(Continuous DC)

Symbol

I

DRM

,

I

RRM

I

GT

V

GT

Test Conditions

Rated V

DRM

or V

RRM

,

Gate Open

V

D

= 7V, R

L

= 100Ω

V

D

= 7V, R

L

= 100Ω

T

J

= +25°C

T

J

= +100°C

T

C

= +25°C

T

C

= –40°C

T

C

= +25°C

T

C

= –40°C

V

D

= Rated V

DRM

, R

L

= 100Ω, T

J

= +100°C

Peak On–State Voltage

V

TM

I

Hold

t

gt

t

q

dv/dt

Pulse Width = 1ms to 2 ms, I

TM

= 5A

peak

Duty Cycle

≤

2%

I

TM

= 15.7A

peak

V

D

= 7V, Gate Open

T

C

= +25°C

T

C

= –40°C

Gate Controlled Turn–On Time

Circuit Commutated Turn–Off

Time

Critical Rate–of–Rise of

Off–State Voltage

I

TM

= 5A, I

GT

= 20mA, V

D

= Rated V

DRM

I

TM

= 5A, I

R

= 5A

T

J

= +100°C

V

D

= Rated V

DRM

, Exponential Waveform,

T

J

= +100°C, Gate Open

Min

–

–

–

–

–

–

0.2

–

–

–

–

–

–

–

–

Typ

–

–

7

–

0.75

–

–

1.0

–

6

–

1

15

20

50

Max

10

2

30

60

1.5

2.5

–

1.5

2.0

40

70

–

–

–

–

Unit

µA

mA

mA

mA

V

V

V

V

V

mA

mA

µs

µs

µs

V/µs

Holding Current

.530 (13.4) Max

.143 (3.65) Dia Thru

.668

(17.0)

Max

K

G

.655

(16.6)

Max

.166 (4.23)

A (Heat Sink Area)

Heat Sink Contact

Area (Bottom)

.150 (3.82) Max