NTE55 [NTE]
Silicon Complementary Transistors High Frequency Driver for Audio Amplifier; 对音频放大器芯片互补晶体管高频驱动器
| 型号： | NTE55 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors High Frequency Driver for Audio Amplifier |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE54 (NPN) & NTE55 (PNP)
Silicon Complementary Transistors
High Frequency Driver for Audio Amplifier
Description:
The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case
designed for use as a high frequency driver in audio amplifier applications.
Features:
D DC Current Gain Specified to 4A:
hFE = 40 Min @ IC = 3A
= 20 MIn @ IC = 4A
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 150V Min
D High Current Gain–Bandwidth Product: fT = 30MHz Min @ IC = 500mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter–Base Voltage, VEB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04W/°C
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.5°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +62.5°C/W
Note 1. Matched complementary pairs are available upon request (NTE55MCP). Matched comple-
mentary pairs have their gain specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
OFF Characteristics
Symbol
Test Conditions
Min
Typ Max Unit
Collector–Emitter Sustaining Voltage
V
I = 10mA, I = 0, Note 2
150
–
–
–
–
–
–
V
CE(sus)
C
B
Collector Cutoff Current
I
I
V
= 150V, I = 0
0.1
10
10
mA
µA
µA
CEO
CE
CE
CE
B
V
V
= 150V, I = 0
–
CBO
E
Emitter Cutoff Current
ON Characteristics (Note 2)
DC Current Gain
I
= 150V, I = 0
–
EBO
C
h
FE
V
CE
V
CE
V
CE
V
CE
V
CE
= 2V, I = 0.1A
40
40
40
20
–
–
–
–
–
2
–
–
–
–
–
C
= 2V, I = 2A
C
= 2V, I = 0.1A
C
= 2V, I = 0.1A
C
DC Current Gain Linearity
h
FE
from 2V to 20V,
I from 0.1A to 3A
C
NPN to PNP
–
–
–
3
–
–
–
0.5
1
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
V
I = 1A, I = 0.1A
V
V
CE(sat)
C
B
V
V = 2V, I = 1A
CE C
BE(on)
Dynamic Characteristics
Current Gain–Bandwidth Product
f
t
V
= 10V, I = 500mA,
= 10MHz, Note 3
30
–
–
MHz
CE
C
f
test
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. fT = |hfe| ꢀ ftest
.420 (10.67)
Max
.110 (2.79)
.500
(12.7)
Max
.147 (3.75)
Dia Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
Emitter
Collector/Tab
.100 (2.54)
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