NTE56015 [NTE]
TRIAC, 25 Amp; 可控硅， 25安培
| 型号： | NTE56015 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | TRIAC, 25 Amp |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE56015 thru NTE56018
TRIAC, 25 Amp
Description:
The NTE56015 through NTE56018 series of TRIACs are high performance glass passivated PNPN
devices in a TO220 type package designed for general purpose applications where moderate gate
sensitivity is required.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Repetitive Peak Off–State Voltage (TJ = –40° to +125°C, RGK = 1kΩ), VDRM
NTE56015 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE56016 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE56017 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE56018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
On–State Current (All Conduction Angles, TC = +85°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Non–Repetitive On–State Current (Half Cycle), ITSM
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275A
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250A
Fusing Current (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312A2s
Peak Gate Current (t = 10µs Max), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Gate Dissipation (t = 10µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Gate Dissipation (t = 20ms Max), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5K/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), TL . . . . . . . . . . . . . . . +250°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
–
Typ Max Unit
Off–State Leakage Current
I
V = V
, R = 1kΩ, T = +25°C
–
–
–
–
–
10
3
µA
mA
V
DRM
D
DRM
GK
J
V = V
, R = 1kΩ, T = +125°C
–
D
DRM
GK
J
On–State Voltage
V
T
I = 37.5A, T = +25°C
–
1.4
0.85
13
T
J
On–State Threshold Voltage
On–State Slope Resistance
V
T(TO)
T = +125°C
J
–
V
r
T = +125°C
J
–
mΩ
T
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Symbol
Test Conditions
V = 12V, Note 1
Min
–
Typ Max Unit
I
–
–
–
–
–
50
2.5
50
–
mA
V
GT
D
V
GT
V = 12V, All Quadrants
D
–
I
H
R
GK
= 1kΩ
–
mA
V/µs
V/µs
Critical Rate–of–Rise
Critical Rate–of–Rise, Off–State
dv/dt
dv/dt
V = 0.67 x V
, R = 1kΩ, T = +125°C
500
5
D
DRM
GK
J
I = 25A, di/dt = 11A/ms, T = +85°C
–
c
T
C
Note 1. For either polarity of gate voltage with reference to electrode MT1.
.420 (10.67)
Max
.110 (2.79)
MT
2
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
MT
Gate
MT
1
.100 (2.54)
2
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