NTE5676 [NTE]
TRIAC - 15 Amp; TRIAC - 15安培
| 型号： | NTE5676 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | TRIAC - 15 Amp |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE5673 thru NTE5677
TRIAC – 15 Amp
Description:
The NTE5673 through NTE5677 series of meduim power TRIACs are bidirectional triode thyristors
which may be switched from off–state to conduction for either polarity od applied voltage with positive
or negative gate triggering. These devices are designed for control of AC loads in applications such
as lighting, heating, and motor speed control as well as static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage and peak Reverse Voltage (TJ = +100°C), VDRM, VRRM
NTE5673 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5675 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5676 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5677 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
On–State Current RMS (TC = +75°C, 360° Conduction), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak Surge (Non–Repetitive) On–State Current (One Full Cycle, 50 or 60Hz), ITSM . . . . . . . . 150A
Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Operating Junction Temperature Range (TJ), Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Min Typ Max Unit
Peak Off–State Current
(Ir = 100A Peak)
IDROM
mA
–
–
–
–
2
Maximum On–State Voltage
(Ir = 100A Peak)
VT
V
2.2
DC Gate Trigger Current
IGT
mA
(Main Terminal Voltage = 24V, RL = 12Ω)
MT2 (+), G (+); MT2 (–), G (–) Quads I – III
MT2 (+), G (–); MT2 (–), G (+) Quads II – IV
–
–
–
–
50
80
DC Gate Trigger Voltage
VGT
IH
V
(Main Terminal Voltage = 24V, RL = 12Ω)
–
–
–
–
–
–
–
2.5
60
–
DC Holding Current
(Gate Open)
mA
µs
Gate Controlled Turn–On Time
tgt
(VD = VDROM, IT = 10A Peak, IGT = 300mA, tr = 0.1µs)
3.0
40
5
Critical Rate–of–Rise of Off–State Voltage
Critical
dv/dt
V/µs
V/µs
(VD = VDROM, TC = +100°C, Gate Open)
–
Critical Rate–of–Rise of Commutation
Commutating
dv/dt
(VD = VDROM, If = IT(RMS), TC = +100°C, Gate Open)
–
.562
(14.28)
Max
MT
Gate
1
.1.193
(30.33)
Max
.200 (5.08) Max
.453
(111.5)
Max
MT
2
1/4–28 UNF–2A
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