NTE5852 [NTE]
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, DO-4,;
| 型号： | NTE5852 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, DO-4, 二极管 |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE5850 thru NTE5869
Silicon Power Rectifier Diode, 6 Amp
Description and Features:
The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type pack-
age designed for battery chargers, converters, power supplies, and machine tool controls.
Features:
D High Surge Current Capability
D High Voltage Available
D Designed for a Wide Range of Applications
D Available in Anode–to–Case or Cathode–to–Case Style
Ratings and Characteristics:
Average Forward Current (TC = +158°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Maximum Forward Surge Current, IFSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141A
Fusing Current, I2t
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90A2s
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141A2s
Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1270A2ps
Maximum Reverse Recovery Voltage Range, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1000V
Voltage Ratings: (TJ = +175°C)
V
–Max
V
–Max
V –Max.
Direct Reverse
Voltage
V
I
–Max
RM
NTE Type Number
RRM
RSM
R
R(SR)
Repetitive Peak
Reverse Volt.
(V)
Non–Repetitive Peak
Reverse Voltage
(V)
Minimum Avalanche
Reverse Current
Rated V
Cathode
to Case
Anode
to Case
Voltage
(V)
RRM
(V)
(mA)
5850
5852
5854
5856
5858
5860
5862
5866
5868
5851
5853
5855
5857
5859
5861
5863
5867
5869
50
100
200
300
400
500
600
800
1000
75
150
275
385
500
613
725
950
1200
50
100
200
300
400
50
–
–
12
12
12
12
12
12
12
12
12
–
–
500
613
725
950
1200
600
800
1000
Electrical Specifications:
Parameter
Symbol
Test Conditions
180° sinusoidal condition, T = +158°C Max
Rating Unit
Maximum Average Forward Current
Maximum RMS Forward Current
I
6
A
A
A
A
A
A
F (AV)
C
I
9.5
F(RMS)
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
134
141
159
167
127
116
1270
1.10
0.60
Maximum Peak One–Cycle
I
Sinusoidal Half Wave,
No voltage reapplied
FSM
Non–Repetitive Surge Current
100% rated voltage reapplied,
T = +175°C
J
2
2
2
A s
Maximum I t for Individual Device
I t
100% rated voltage reapplied,
Fusing
Initial T = +175°C
J
2
A s
2
2
2
t = 0.1 to 10ms, No voltage reapplied, Note 1
= 19A, T = +25°C
Maximum I pt
I pt
A pt
Maximum Peak Forward Voltage
V
FM
I
V
V
FM
J
Maximum Value of Threshold
Voltage
V
M (TO)
T = +175°C
J
Maximum Value of Forward Slope
Resistance
r
T = +175°C
J
17.2
mΩ
t
Note 1. I2t for time tx = I2Ǩt S Ǩtx
Thermal–Mechanical Specifications:
Parameter
Symbol
Test Conditions
Rating
Unit
°C
Maximum Operation Junction Temperature
Maximum Storage Temperature
T
–65 to + 175
–65 to + 200
2.5
J
T
stg
°C
Maximum Internal Thermal Resistance
R
thJC
DC operation
K/W
Junction–to–Case
Thermal Resistance, Case–to–Sink
Mounting Torque
R
Mounting surface flat, smooth and
greased
0.25
K/W
thCS
T
Non–lubricated threads
1.2 – 1.5
(10.5 – 13.5) (in•lb)
m•N
Approximate Weight
wt
11 (0.25) g (oz)
.250 (6.35) Max
.437
(11.1)
Max
.175 (4.45) Max
10–32 NF–2A
.060 (1.52)
Dia Min
.405
(10.3)
Max
.453
(11.5)
Max
.424 (10.8)
Dia Max
1.250 (31.75) Max
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