NTE596 [NTE]
Silicon Diode, Dual, Common Anode, High Speed; 硅二极管，双通道，共阳极，高速
| 型号： | NTE596 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Diode, Dual, Common Anode, High Speed |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE596
Silicon Diode, Dual, Common Anode,
High Speed
Description:
The NTE596 consists of two silicon diodes in an SOT–23 type surface mount package. The anodes
are common and the device is intended for high–speed switching applications in thick and thin–film
circuits.
Absolute Maximum Ratings:
Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Non–Repetitive Peak Forward Current (Per device, t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . 500mA
Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA
DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (TA ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Tab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Thermal Resistance, Tab–to–Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 x 280K/W
Thermal Resistance, Soldering Points–to–Ambient (Note 2), RthSA . . . . . . . . . . . . . . . . . 2 x 90K/W
Note 1. Measured under pulse conditions: tp ≤ 0.5ms, IF(AV) = 150mA, t(av) ≤ 1ms, for sinusoidal
operation.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics (Per Diode): (TJ = +25°C unless otherwise specified)
Parameter
Forward Voltage
Symbol
Test Conditions
IF = 1mA
Min
–
Typ
–
Max Unit
715 mV
855 mV
1000 mV
1250 mV
VF
IF = 10mA
–
–
IF = 50mA
–
–
IF = 150mA
–
–
Reverse Current
IR
VR = 70V
–
–
2.5
50
µA
µA
pF
V
VR = 70V, TJ = +150°C
VR = 0, f = 1MHz
tr = 20ns
–
–
Diode Capacitance
Cd
Vfr
–
–
2
Forward Recovery Voltage
–
–
1.75
(When switched to IF = 10mA)
Electrical Characteristics (Per Diode): (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Reverse Recovery Time
(When switched from
IF = 10mA to IR = 10mA
trr
measured at IR = 1mA,
RL = 100Ω
–
–
6
ns
Recovery Charge
Qs
RL = 100Ω
–
–
45
pC
(When switched from
IF = 10mA to VR = 5V
.016 (0.48)
A
.098
(2.5)
Max
K
K
.037 (0.95)
.074 (1.9)
.118 (3.0) Max
.051
(1.3)
.043 (1.1)
.007 (0.2)
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