NTE68 [NTE]
Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications; 硅互补晶体管通用大功率音响，硬盘磁头定位的线性应用
| 型号： | NTE68 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE388 (NPN) & NTE68 (PNP)
Silicon Complementary Transistors
General Purpose High Power Audio,
Disk Head Positioner for Linear Applications
Description:
The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type
package designed for high power audio, disk head positioners, and other linear applications.
Features:
D High Safe Operating Area: 2A @ 80V
D High DC Current Gain: hFE = 15 Min @ IC = 8A
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Peak (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70°C/W
Note 1. Matched complementary pairs are available upon request (NTE68MCP). Matched comple-
mentary pairs have their gain specification (hFE) matched to within 10% of each other.
Note 2. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
V
I = 100mA, I = 0, Note 3
250
–
–
–
–
–
–
V
CEO(sus)
C
B
I
V
= 250V, V = 1.5V
BE(off)
250
500
500
µA
µA
µA
CEX
CE
CE
EB
I
V
V
= 200V, I = 0
–
CEO
B
Emitter Cutoff Current
I
= 5V, I = 0
–
EBO
C
Second Breakdown
I
V
V
= 50V, t = 0.5s (non–repetitive)
= 80V, t = 0.5s (non–repetitive)
5
2
–
–
–
–
µA
µA
Second Breakdown Collector Current
with Base Forward Bias
S/b
CE
CE
ON Characteristics
DC Current Gain
h
V
V
= 4V, I = 8A
15
5
–
–
–
–
–
60
–
FE
CE
C
= 4V, I = 16A
CE
C
Collector–Emitter Saturation Voltage
V
I = 8A, I = 800mA
C
–
1.4
4.0
2.2
V
V
V
CE(sat)
B
I = 16A, I = 3.2A
C
–
B
Base–Emitter On Voltage
Dynamic Characteristics
Current Gain–Bandwidth Product
Output Capacitance
V
V
CE
= 4V, I = 8A
–
BE(on)
C
f
V
V
= 10V, I = 1A, f = 1MHz
test
4
–
–
–
MHz
pF
T
CE
C
C
= 10V, I = 0, f = 1MHz
test
–
500
ob
CB
E
Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187
(30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/Case
Base
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