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R26-11AD10-24 [NTE]

Multi-Delay Relay,;

R26-11AD10-24


元器件型号：	R26-11AD10-24
生产厂家：	NTE ELECTRONICS
描述和应用：	Multi-Delay Relay, 继电器
PDF文件：	总1页 (文件大小：685K)
下载文档：	下载PDF数据表文档文件
型号参数：R26-11AD10-24参数

R26151BGL

SURGE PROTECTIVE DEVICES

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2 OKAYA

R26-151-BGL

SPD (Surge Protective Device)

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15 OKAYA

R26152BGL

SURGE PROTECTIVE DEVICES

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2 OKAYA

R26-152-BGL

SPD (Surge Protective Device)

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14 OKAYA

R2619ZC18J

Silicon Controlled Rectifier, 5227A I(T)RMS, 4395000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element,

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0 IXYS

R2619ZC18K

Silicon Controlled Rectifier, 5227A I(T)RMS, 4395000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element,

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0 IXYS

R2619ZC18L

Silicon Controlled Rectifier, 5227A I(T)RMS, 4395000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element,

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0 IXYS

R2619ZC20J

Silicon Controlled Rectifier, 5227A I(T)RMS, 4395000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element,

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0 IXYS

R2619ZC20K

Silicon Controlled Rectifier, 5227A I(T)RMS, 4395000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element,

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0 IXYS

R2619ZC20L

Silicon Controlled Rectifier, 5227A I(T)RMS, 4395000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element,

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0 IXYS

R2619ZC21J

暂无描述

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0 IXYS

R2619ZC21K

Silicon Controlled Rectifier, 5227A I(T)RMS, 4395000mA I(T), 2100V V(DRM), 2100V V(RRM), 1 Element,

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0 IXYS

R2619ZC21L

Silicon Controlled Rectifier, 5227A I(T)RMS, 4395000mA I(T), 2100V V(DRM), 2100V V(RRM), 1 Element,

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0 IXYS

R2619ZC25J

Silicon Controlled Rectifier, 5227A I(T)RMS, 2500V V(DRM), 2100V V(RRM), 1 Element,

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2 IXYS

R2619ZC25K

Silicon Controlled Rectifier, 5227A I(T)RMS, 2500V V(DRM), 2100V V(RRM), 1 Element,

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0 IXYS

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