M36W216T85ZA1 [NUMONYX]
SPECIALTY MEMORY CIRCUIT, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66;型号: | M36W216T85ZA1 |
厂家: | NUMONYX B.V |
描述: | SPECIALTY MEMORY CIRCUIT, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66 静态存储器 内存集成电路 |
文件: | 总56页 (文件大小:340K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
M36W216T
M36W216B
16 Mbit (1Mb x16, Boot Block) Flash Memory
and 2 Mbit (128K x16) SRAM, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY
■ SUPPLY VOLTAGE
SRAM
■ 2 Mbit (128K x 16 bit)
– V
– V
– V
= 2.7V to 3.3V
DDF
DDS
PPF
■ ACCESS TIME: 70ns
= V
= 2.7V to 3.3V
DDQF
■ LOW V
DATA RETENTION: 1.5V
DDS
= 12V for Fast Program (optional)
■ POWER DOWN FEATURES USING TWO
■ ACCESS TIME: 85,100ns
CHIP ENABLE INPUTS
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
Figure 1. Packages
– Manufacturer Code: 20h
– Top Device Code, M36W216T: 88CEh
– Bottom Device Code, M36W216B: 88CFh
FLASH MEMORY
■ 16 Mbit (1Mb x16) BOOT BLOCK
FBGA
– 8 x 4 KWord Parameter Blocks (Top or
Bottom Location)
■ PROGRAMMING TIME
– 10µs typical
Stacked LFBGA66 (ZA)
8 x 8 ball array
– Double Word Programming Option
■ BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WPF for Block Lock-Down
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ SECURITY
– 64 bit user programmable OTP cells
– 64 bit unique device identifier
– One parameter block permanently lockable
May 2001
1/56
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M36W216T, M36W216B
TABLE OF CONTENTS
SUMMARY DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. LFBGA Connections (Top view through package). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Signal Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
FUNCTIONAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 4. Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 2. Main Operation Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Flash Memory Component . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5. Flash Block Addresses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 6. Flash Security Block Memory Map. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
SRAM Component. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
OPERATING MODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Flash Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Flash Command Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 3. Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 4. Read Electronic Signature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 5. Read Block Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 6. Read Protection Register and Lock Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 7. Program, Erase Times and Program/Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . . 17
Flash Block Locking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 8. Block Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 9. Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Flash Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 10. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
SRAM Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 11. Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 12. Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 8. AC Measurement Load Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 13. Device Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 14. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 9. Flash Read Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 15. Flash Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 10. Flash Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 16. Flash Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 11. Flash Write AC Waveforms, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 17. Flash Write AC Characteristics, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . 29
2/56
M36W216T, M36W216B
Figure 12. Flash Power-Up and Reset AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 18. Flash Power-Up and Reset AC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 13. SRAM Read Mode AC Waveforms, Address Controlled with UBS = LBS = V . . . . . . 31
IL
Figure 14. SRAM Read AC Waveforms, E1S, E2S or GS Controlled. . . . . . . . . . . . . . . . . . . . . . . 31
Figure 15. SRAM Standby AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 19. SRAM Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 16. SRAM Write AC Waveforms, WS Controlled with GS Low . . . . . . . . . . . . . . . . . . . . . . 33
Figure 17. SRAM Write AC Waveforms, WS Controlled with GS High . . . . . . . . . . . . . . . . . . . . . . 33
Figure 18. SRAM Write Cycle Waveform, UBS and LBS Controlled. . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 19. SRAM Write AC Waveforms, E1S Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 20. SRAM Write AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 20. SRAM Low V
Figure 21. SRAM Low V
Data Retention AC Waveforms, E1S Controlled . . . . . . . . . . . . . . . . 36
Data Retention AC Waveforms, E2S Controlled . . . . . . . . . . . . . . . . 36
Data Retention Characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
DDS
DDS
DDS
Table 21. SRAM Low V
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 22. Stacked LFBGA66 - 8 x 8 ball array, 0.8 mm pitch, Bottom View Package Outline. . . . 37
Table 22. Stacked LFBGA66 - 8 x 8 ball array, 0.8 mm pitch, Package Mechanical Data . . . . . . . 37
Figure 23. Stacked LFBGA66 Daisy Chain - Package Connections (Top view through package) . 38
Figure 24. Stacked LFBGA66 Daisy Chain - PCB Connections proposal (Top view through package)39
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 23. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 24. Daisy Chain Ordering Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 25. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
APPENDIX A. FLASH MEMORY BLOCK ADDRESS TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 26. Top Boot Block Addresses, M36W216T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 27. Bottom Boot Block Addresses, M36W216B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
APPENDIX B. COMMON FLASH INTERFACE (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 28. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 29. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 30. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 31. Device Geometry Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 32. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 33. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
APPENDIX C. FLASH MEMORY FLOWCHARTS and PSEUDO CODES . . . . . . . . . . . . . . . . . . . . . 48
Figure 25. Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 26. Double Word Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 27. Program Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . 50
Figure 28. Erase Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
3/56
M36W216T, M36W216B
Figure 29. Erase Suspend & Resume Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 30. Locking Operations Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
APPENDIX D. FLASH MEMORY COMMAND INTERFACE and PROGRAM/ERASE CONTROLLER
STATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Table 34. Write State Machine Current/Next, sheet 1 of 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Table 35. Write State Machine Current/Next, sheet 2 of 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
4/56
M36W216T, M36W216B
SUMMARY DESCRIPTION
The M36W216 is a low voltage Multiple Memory
Product which combines two memory devices; a
16 Mbit boot block Flash memory and an 2 Mbit
SRAM. Recommended operating conditions do
not allow both the Flash and the SRAM to be ac-
tive at the same time.
Table 1. Signal Names
A0-A16
Address Inputs
A17-A19
DQ0-DQ15
Address Inputs for Flash Chip only
Data Input/Output
The memory is offered in a Stacked LFBGA66 (0.8
mm pitch) package and is supplied with all the bits
erased (set to ‘1’).
V
Flash Power Supply
DDF
V
Flash Power Supply for I/O Buffers
DDQF
Flash Optional Supply Voltage for Fast
Program & Erase
V
PPF
Figure 2. Logic Diagram
V
V
V
Flash Ground
SSF
DDS
SSS
V
V
SRAM Power Supply
SRAM Ground
DDQF
V
DDS
V
DDF
PPF
NC
Not Connected Internally
20
16
A0-A19
DQ0-DQ15
Flash control functions
EF
Chip Enable input
EF
GF
GF
Output Enable input
Write Enable input
Reset input
WF
WF
RPF
WPF
RPF
WPF
M36W216T
M36W216B
Write Protect input
E1S
E2S
GS
SRAM control functions
E1S, E2S
GS
Chip Enable inputs
Output Enable input
Write Enable input
WS
WS
UBS
LBS
UBS
Upper Byte Enable input
Lower Byte Enable input
LBS
V
V
SSS
SSF
AI90253
5/56
M36W216T, M36W216B
Figure 3. LFBGA Connections (Top view through package)
7
8
#3
#4
#1
#2
1
2
3
4
5
6
A15
A10
A14
A9
A
B
C
D
E
F
NC
NC
NC
A16
WF
A11
A8
A13
A12
WS
V
V
NC
NC
SSF
DDQF
DQ15
DQ13
DQ12
DQ14
DQ4
DQ7
NC
DQ6
E2S
DQ10
DQ8
A2
DQ5
V
RPF
V
V
SSS
DDS
DDF
WPF
V
A19
GS
A7
DQ11
DQ2
DQ0
A1
DQ3
PPF
LBS
A18
NC
UBS
DQ9
A3
DQ1
E1S
NC
G
H
A17
A5
A6
A0
NC
NC
A4
EF
V
GF
NC
NC
SSF
AI90254
Signal Descriptions
buffers, decoders and sense amplifiers. When
Chip Enable is at V and Resetis at V the device
IL
IH
See Figure 2 Logic Diagram and Table 1,Signal
Names, for a brief overview of the signals connect-
ed to this device.
is in active mode. When Chip Enable is at V the
IH
memory is deselected, the outputs are high imped-
ance and thepower consumption is reduced to the
standby level.
Flash Output Enable (GF). The Output Enable
controls the data outputs during the Bus Read op-
eration of the Flash memory.
Address Inputs (A0-A16). Addresses
A0-A16
are common inputs for the Flash and the SRAM
components. The Address Inputs select the cells
in the memory array to access during Bus Read
operations. During Bus Write operations they con-
trol the commands sent to the Command Interface
of the internal state machine. The Flash memory is
accessed through the Chip Enable (EF) and Write
Enable (WF) signals, while the SRAM is accessed
through two Chip Enable signals (E1S and E2S)
and the Write Enable signal (WS).
Flash Write Enable (WF). The Write Enable
controls the Bus Write operation of the Flash
memory’s Command Interface. The data and ad-
dress inputs are latched on the rising edge of Chip
Enable, EF, or Write Enable, WF, whichever oc-
curs first.
Address Inputs (A17-A19). Addresses A17-A19
are inputs for the Flash component only. The
Flash memory is accessed through the Chip En-
able (EF) and Write Enable (WF) signals
Flash Write Protect (WPF). Write Protect is an
input that gives an additional hardware protection
for each block. When Write Protect is at V , the
IL
Lock-Down is enabled and the protection status of
the block cannot be changed. When Write Protect
Data Input/Output (DQ0-DQ15). The Data I/O
outputs the data stored at the selected address
during a Bus Read operation or inputs a command
or the data to be programmed during a Write Bus
operation.
Flash Chip Enable (EF). The Chip Enable input
activates the Flash memory control logic, input
is at V , the Lock-Down is disabled and the block
IH
can be locked or unlocked. (refer to Table 6, Read
Protection Register and Protection Register Lock).
Flash Reset (RPF). The Reset input provides a
hardware reset of the Flash memory. When Reset
is at V , the memory is in reset mode: the outputs
IL
6/56
M36W216T, M36W216B
are high impedance and the current consumption
is minimized. After Reset all blocks are in the
V
and V
Supply Voltage (2.7V to 3.3V).
DDQF
DDS
V
DDQF
provides the power supply for the Flash
Locked state. When Reset is at V , the device is
IH
memory I/O pins and V
supply for the SRAM control pins. This allows all
Outputs to be powered independently from the
Flash core power supply, V
provides the power
DDS
in normal operation. Exiting reset mode the device
enters read array mode, but a negative transition
of Chip Enable or a change of the address is re-
quired to ensure valid data outputs.
. V
can be tied
DDF DDQF
to V
DDS
SRAM Chip Enable (E1S, E2S). The Chip En-
V
PPF
Program Supply Voltage. V
is both a
PPF
able inputs activate the SRAM memory control
control input and a power supply pin for the Flash
memory. The two functions are selected by the
voltage range applied to the pin. The Supply Volt-
logic, input buffers and decoders. E1S at V or
IH
E2S at V deselects the memory and reduces the
IL
power consumption to the standby level. E1S and
E2S can also be used to control writing to the
age V
and the Program Supply Voltage V
DDF
PPF
can be applied in any order.
If V is kept in a low voltage range (0V to 3.6V)
SRAM memory array, while WS remains at V It
IL.
PPF
is not allowed to set EF at V E1S at V and E2S
IL,
IL
V
PPF
is seen as a control input. In this case a volt-
at V at the same time.
IH
age lower than V
gives an absolute protection
PPLK
SRAM Write Enable (WS). The Write Enable in-
put controls writing to the SRAM memory array.
WS is active low.
against program or erase, while V
ables these functions (see Table 14, DC Charac-
teristics for the relevant values). V is only
> V
en-
PPF
PP1
PPF
SRAM Output Enable (GS). The Output Enable
gates the outputs through the data buffers during
a read operation of the SRAM memory. GS is ac-
tive low.
sampled at the beginning of a program or erase; a
change in its value after the operation has started
does not have any effect and program or erase op-
erations continue.
SRAM Upper Byte Enable (UBS). The Upper
Byte Enable enables the upper bytes for SRAM
(DQ8-DQ15). UBS is active low.
If V
is in the range 11.4V to 12.6V it acts as a
PPF
power supply pin. In this condition V
stable until the Program/Erase algorithm is com-
pleted (see Table 16 and 17).
must be
PPF
SRAM Lower Byte Enable (LBS). The Lower
Byte Enable enables the lower bytes for SRAM
(DQ0-DQ7). LBS is active low.
V
and V
Ground. V
and V
are the
SSF
SSS
SSF
SSS
ground reference for all voltage measurements in
the Flash and SRAM chips, respectively.
V
Supply Voltage (2.7V to 3.3V). V
pro-
DDF
DDF
vides the power supply to the internal core of the
Flash Memory device. It is the main power supply
for all operations (Read, Program and Erase).
Note: Each device in a system should have V
D-
, V
and V
decoupled with a 0.1µF ca-
DF DDQF
PPF
pacitor close to the pin. See Figure 9, AC
Measurement Load Circuit. The PCB trace
widths should be sufficient to carry the re-
quired V
program and erase currents.
PPF
7/56
M36W216T, M36W216B
FUNCTIONAL DESCRIPTION
The Flash and SRAM components have separate
power supplies and grounds and are distinguished
by three chip enable inputs: EF for the Flash mem-
ory and, E1S and E2S for the SRAM.
Recommended operating conditions do not allow
both the Flash and the SRAM to be in active mode
at the same time. The most common example is
simultaneous read operations on the Flash and
the SRAM which would result in a data bus con-
tention. Therefore it is recommended to put the
SRAM in the high impedance state when reading
the Flash and vice versa (see Table 2 Main Oper-
ation Modes for details).
Figure 4. Functional Block Diagram
V
V
V
DDQF
DDF
PPF
EF
GF
WF
RPF
WPF
Flash Memory
16 Mbit (x16)
A17-A19
A0-A16
V
SSF
V
DQ0-DQ15
DDS
E1S
E2S
GS
SRAM
2 Mbit (x16)
WS
UBS
LBS
V
SSS
AI90255
8/56
M36W216T, M36W216B
Table 2. Main Operation Modes
Operation
(1)
V
EF GF WF RPF WPF
E1S E2S GS WS
DQ15-DQ0
UBS, LBS
PPF
Mode
Data
Output
V
V
V
V
V
V
Read
X
Don’t care
or
SRAM must be disabled
IL
IL
IL
IL
IH
IH
IH
V
CCF
V
V
V
IH
Write
SRAM must be disabled
Data Input
IH
IL
V
PPFH
Block
Locking
V
V
V
V
V
IL
X
X
Don’t care
SRAM must be disabled
X
IH
IH
Standby
Reset
X
X
X
X
X
Don’t care
Don’t care
Any SRAM mode is allowed
Any SRAM mode is allowed
Hi-Z
Hi-Z
IH
V
V
X
X
X
IL
Output
Disable
V
V
V
IH
Don’t care
Any SRAM mode is allowed
Hi-Z
IL
IH
IH
Data out
Word Read
Read
Write
Flash must be disabled
Flash must be disabled
V
V
V
V
V
V
V
V
IL
IL
IH
IH
IL
IH
IL
IL
Data in
Word Write
V
V
V
IL
IH
X
X
X
X
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
IH
Standby/
Power
Down
V
Any Flash mode is allowable
Any Flash mode is allowable
X
X
X
X
X
X
X
X
X
X
X
X
IL
X
V
IH
X
V
X
X
X
IH
Data
Retention
V
X
X
IL
X
V
IH
Output
Disable
V
V
V
V
IH
Any Flash mode is allowable
X
Hi-Z
IL
IH
IH
Note: X = V or V , V
= 12V ± 5%.
IL
IH
PPFH
1. If UBS and LBS are tied together the bus is at 16 bit. For an 8 bit bus configuration use UBSand LBS separately.
9/56
M36W216T, M36W216B
Flash Memory Component
The Flash Memory is a 16 Mbit (1 Mbit x 16) de-
vice that can be erased electrically at the block
level and programmed in-system on a Word-by-
Word basis. These operations can be performed
using a single low voltage (2.7 to 3.3V) supply
against program or erase. All blocks are locked at
Power Up.
Each block can be erased separately. Erase can
be suspended in order to perform either read or
program in any other block and then resumed.
Program can be suspended to read data in any
other block and then resumed. Each block can be
programmed and erased over 100,000 cycles.
and the V
for device I/0 operation feature the
DDQF
same voltage range. An optional 12V V
power
PPF
supply is provided to speed up customer pro-
The device includes a 128 bit Protection Register
and a Security Block to increase the protection of
a system design. The Protection Register is divid-
ed into two 64 bit segments, the first one contains
a unique device number written by ST, while the
second one is one-time-programmable by the us-
er. The user programmable segment can be per-
manently protected. The Security Block,
parameter block 0, can be permanently protected
by the user. Figure 6, shows the Flash Security
Block Memory Map.
gramming.
The device features an asymmetrical blocked ar-
chitecture with an array of 39 blocks: 8 Parameter
Blocks of 4 KWord and 31 Main Blocks of 32
KWord. The device denoted by “T” suffix has the
Parameter Blocks at the top of the memory ad-
dress space while the one denoted by “B” suffix lo-
cates the Parameter Blocks starting from the
bottom. The memory maps are shown in Figure 5,
Block Addresses.
The Flash Memory features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling in-
stant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any acciden-
tal programming or erasure. There is an additional
hardware protection against program and erase.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
When V
≤ V
all blocks are protected
PPF
PPLK
10/56
M36W216T, M36W216B
Figure 5. Flash Block Addresses
Top Boot Block Addresses
Bottom Boot Block Addresses
FFFFF
FFFFF
4 KWords
FF000
32 KWords
32 KWords
F8000
F7FFF
Total of
4 KWord Blocks
8
F0000
Total of 31
32 KWord Blocks
F8FFF
4 KWords
F8000
F7FFF
32 KWords
F0000
0FFFF
32 KWords
4 KWords
08000
07FFF
Total of 31
07000
32 KWord Blocks
Total of
8
0FFFF
4 KWord Blocks
32 KWords
08000
07FFF
00FFF
00000
32 KWords
4 KWords
00000
AI90256
Note: Also see Appendix A, Tables 26 and 27 for a full listing of the Flash Block Addresses.
Figure 6. Flash Security Block Memory Map
88h
User Programmable OTP
85h
84h
Parameter Block # 0
Unique device number
81h
80h
Protection Register Lock
2
1
0
AI90257
SRAM Component
cess time of 70 ns in all conditions. The memory
operations can be performed using a single low
voltage supply, 2.7V to 3.3V, which is the same as
the Flash voltage supply.
The SRAM is an 2 Mbit asynchronous random ac-
cess memory which features a super low voltage
operation and low current consumption with an ac-
11/56
M36W216T, M36W216B
OPERATING MODES
Flash Bus Operations
puts will still output data if a bus Read operation is
in progress.
There are six standard bus operations that control
the device. These are Bus Read, Bus Write, Out-
put Disable, Standby, Automatic Standby and Re-
set. See Table 2, Main Operation Modes, for a
summary.
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect bus operations.
Reset. During Reset mode when Output Enable
is Low, V , the memory is deselected and the out-
IL
puts are high impedance. The memory is in Reset
mode when Reset is at V . The power consump-
IL
tion is reduced to the Standby level, independently
from the Chip Enable, Output Enable or Write En-
able inputs. If Reset is pulled to V
during a Pro-
SSF
gram or Erase, this operation is aborted and the
memory content is no longer valid.
Read. Read Bus operations are used to output
the contents of the Memory Array, the Electronic
Signature, the Status Register and the Common
Flash Interface. Both Chip Enable and Output En-
Flash Command Interface
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. An internal Program/Erase Controller han-
dles all timings and verifies the correct execution
of the Program and Erase commands. The Pro-
gram/Erase Controller provides a Status Register
whose output may be read at any time during, to
monitor the progress of the operation, or the Pro-
gram/Erase states. See Appendix 29, Table 34,
Write State Machine Current/Next, for a summary
of the Command Interface.
able must be at V in order to perform a read op-
IL
eration. The Chip Enable input should be used to
enable the device. Output Enable should be used
to gate data onto the output. The data read de-
pends on the previous command written to the
memory (see Command Interface section). See
Figure 9, Read Mode AC Waveforms, and Table
15, Flash Read AC Characteristics, for details of
when the output becomes valid.
Read mode is the default state of the device when
exiting Reset or after power-up.
Write. Bus Write operations write Commands to
the memory or latch Input Data to be programmed.
A write operation is initiated when Chip Enable
The Command Interface is reset to Read mode
when power is first applied, when exiting from Re-
set or whenever V
is lower than V
. Com-
LKO
DDF
and Write Enable are at V with Output Enable at
IL
mand sequences must be followed exactly. Any
invalid combination of commands will reset the de-
vice to Read mode. Refer to Table 3, Commands,
in conjunction with the text descriptions below.
V . Commands, Input Data and Addresses are
IH
latched on the rising edge of Write Enable or Chip
Enable, whichever occurs first.
See Figures 10 and 11, Write AC Waveforms, and
Tables 16 and 17, Flash Write AC Characteristics,
for details of the timing requirements.
Read Memory Array Command. The
Read
command returns the memory to its Read mode.
One Bus Write cycle is required to issue the Read
Memory Array command and return the memory to
Read mode. Subsequent read operations will read
the addressed location and output the data. When
a device Reset occurs, the memory defaults to
Read mode.
Read Status Register Command. The Status
Register indicates when a program or erase oper-
ation is complete and the success or failure of the
operation itself. Issue a Read Status Register
command to read the Status Register’s contents.
Subsequent Bus Read operations read the Status
Register at any address, until another command is
issued. See Table 10, Status Register Bits, for de-
tails on the definitions of the bits.
Output Disable. The data outputs are high im-
pedance when the Output Enable is at V .
IH
Standby. Standby disables most of the internal
circuitry allowing a substantial reduction of the cur-
rent consumption. The memory is in stand-by
when Chip Enable is at V and the device is in
IH
read mode. The power consumption is reduced to
the stand-by level and the outputs are set to high
impedance, independently from the Output Enable
or Write Enable inputs. If Chip Enable switches to
V
during a program or erase operation, the de-
IH
vice enters Standby mode when finished.
Automatic Standby. Automatic Standby pro-
vides a low power consumption state during Read
mode. Following a read operation, the device en-
ters Automatic Standby after 150ns of bus inactiv-
The Read Status Register command may be is-
sued at any time, even during a Program/Erase
operation. Any Read attempt during a Program/
Erase operation will automatically output the con-
tent of the Status Register.
ity even if Chip Enable is Low, V , and the supply
IL
current is reduced to I
. The data Inputs/Out-
DD1
12/56
M36W216T, M36W216B
Read Electronic Signature Command. The
Read Electronic Signature command reads the
Manufacturer and Device Codes and the Block
Locking Status, or the Protection Register.
The Read Electronic Signature command consists
of one write cycle, a subsequent read will output
the Manufacturer Code, the Device Code, the
Block Lock and Lock-Down Status, or the Protec-
tion and Lock Register. See Tables 4, 5 and 6 for
the valid address.
■ The first bus cycle sets up the Program
command.
■ The secondlatches theAddress and the Data to
be written and starts the Program/Erase
Controller.
During Program operations the memory will ac-
cept the Read Status Register command and the
Program/Erase Suspend command. Typical Pro-
gram times are given in Table 7, Program, Erase
Times and Program/Erase Endurance Cycles.
Read CFI Query Command. The Read Query
Command is used to read data from the Common
Flash Interface (CFI) Memory Area, allowing pro-
gramming equipment or applications to automati-
cally match their interface to the characteristics of
the device. One Bus Write cycle is required to is-
sue the Read Query Command. Once the com-
mand is issued subsequent Bus Read operations
read from the Common Flash Interface Memory
Area. See Appendix B, Common Flash Interface,
Tables 28, 29, 30, 31, 32 and 33 for details on the
information contained in the Common Flash Inter-
face memory area.
Block Erase Command. The Block Erase com-
mand can be used to erase a block. It sets all the
bits within the selected block to ’1’. All previous
data in the block is lost. If the block is protected
then the Erase operation will abort, the data in the
block will not be changed and the Status Register
will output the error.
Programming aborts if Reset goes to V . As data
IL
integrity cannot be guaranteed when the program
operation is aborted, the block containing the
memory location must be erased and repro-
grammed.
See Appendix C, Figure 25, Program Flowchart
and Pseudo Code, for the flowchart for using the
Program command.
Double Word Program Command. This feature
is offered to improve the programming throughput,
writing a page of two adjacent words in paral-
lel.The two words must differ only for the address
A0. Programming should not be attempted when
V
is not at V
PPF
. The command can be execut-
PPF
ed if V
PPH
is below V
but the result is not guar-
PPH
anteed.
Three bus write cycles are necessary to issue the
Double Word Program command.
■ The first bus cycle sets up the Double Word
Program Command.
■ The second bus cycle latches the Address and
Two Bus Write cycles are required to issue the
command.
the Data of the first word to be written.
■ The first bus cycle sets up the Erase command.
■ The third bus cycle latches the Address and the
Data of the secondword to be written and starts
the Program/Erase Controller.
■ The second latches the block address in the
internal state machine and starts the Program/
Erase Controller.
Read operations output the Status Register con-
tent after the programming has started. Program-
If the second bus cycle is not Write Erase Confirm
(D0h), Status Register bits b4 and b5 are set and
the command aborts.
ming aborts if Reset goes to V . As data integrity
IL
cannot be guaranteed when the program opera-
tion is aborted, the block containing the memory
location must be erased and reprogrammed.
Erase aborts if Reset turns to V . As data integrity
IL
cannot be guaranteed when the Erase operation is
aborted, the block must be erased again.
See Appendix C, Figure 26, Double Word Pro-
gram Flowchart and Pseudo Code, for the flow-
chart for using the Double Word Program
command.
During Erase operations the memory will accept
the Read Status Register command and the Pro-
gram/Erase Suspend command, all other com-
mands will be ignored. Typical Erase times are
given in Table 7, Program, Erase Times and Pro-
gram/Erase Endurance Cycles.
See Appendix C, Figure 28, Erase Flowchart and
Pseudo Code, for a suggested flowchart for using
the Erase command.
Clear Status Register Command. The
Clear
Status Register command can be used to reset
bits 1, 3, 4 and 5 in the Status Register to ‘0’. One
bus write cycle is required to issue the Clear Sta-
tus Register command.
The bits in the Status Register do not automatical-
ly return to ‘0’ when a new Program or Erase com-
mand is issued. The error bits in the Status
Register should be cleared before attempting a
new Program or Erase command.
Program Command. The memory array can be
programmed word-by-word. Two bus write cycles
are required to issue the Program Command.
13/56
M36W216T, M36W216B
Program/Erase Suspend Command. The Pro-
gram/Erase Suspend command is used to pause
a Program or Erase operation. One bus write cycle
is required to issue the Program/Erase command
and pause the Program/Erase controller.
■ The secondlatches theAddress and the Data to
be written to the Protection Register and starts
the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started.
During Program/Erase Suspend the Command In-
terface will accept the Program/Erase Resume,
Read Array,Read Status Register, ReadElectron-
ic Signature and Read CFI Query commands. Ad-
ditionally, if the suspend operation was Erase then
the Program, Block Lock, Block Lock-Down or
Protection Program commands will also be ac-
cepted. The block being erased may be protected
by issuing the Block Protect, Block Lock or Protec-
tion Program commands. When the Program/
Erase Resume command is issued the operation
will complete. Only the blocks not being erased
may be read or programmed correctly.
The segment can be protected by programming bit
1 of the Protection Lock Register. Bit 1 of the Pro-
tection Lock Register protects bit 2 of the Protec-
tion Lock Register. Programming bit 2 of the
Protection Lock Register will result in a permanent
protection of the Security Block (see Figure 6,
Flash Security Block Memory Map). Attempting to
program a previously protected Protection Regis-
ter will result in a Status Register error. The pro-
tection of the Protection Register and/or the
Security Block is not reversible.
The Protection Register Program cannot be sus-
pended.
During a Program/Erase Suspend, the device can
be placed in a pseudo-standby mode by taking
Block Lock Command. The Block Lock com-
mand is used to lock ablock and prevent Program
or Erase operations from changing the data in it.
All blocks are locked at power-up or reset.
Chip Enable to V . Program/Erase is aborted if
IH
Reset turns to V .
IL
See Appendix C, Figure 27, Program or Double
Word Program Suspend & Resume Flowchart and
Pseudo Code, and Figure 29, Erase Suspend &
Resume Flowchart and Pseudo Code for flow-
charts for using the Program/Erase Suspend com-
mand.
Two Bus Write cycles are required to issue the
Block Lock command.
■ The first bus cycle sets up the Block Lock
command.
■ The second Bus Write cycle latches the block
address.
Program/Erase Resume Command. The Pro-
gram/Erase Resume command can be used to re-
The Lock Status can be monitored for each block
using the Read Block Signature command. Table.
9 shows the Lock Status after issuing a Block Lock
command.
The Block Lock bits are volatile, once set they re-
main set until reset or power-down/power-up.
They are cleared by a Blocks Unlock command.
Refer to the section, Block Locking, for a detailed
explanation.
start the Program/Erase Controller after
a
Program/Erase Suspend operation has paused it.
One Bus Write cycle is required to issue the com-
mand. Once the command is issued subsequent
Bus Read operations read the Status Register.
See Appendix C, Figure 27, Program or Double
Word Program Suspend & Resume Flowchart and
Pseudo Code, and Figure 29, Erase Suspend &
Resume Flowchart and Pseudo Code for flow-
charts for using the Program/Erase Resume com-
mand.
Protection Register Program Command. The
Protection Register Program command is used to
Program the 64 bit user One-Time-Programmable
(OTP) segment of the Protection Register. The
segment is programmed 16 bits at a time. When
shipped all bits in the segment are set to ‘1’. The
user can only program the bits to ‘0’.
Block Unlock Command. The Blocks Unlock
command is used to unlock a block, allowing the
block to be programmed or erased. Two Bus Write
cycles are required to issue the Blocks Unlock
command.
■ The first bus cycle sets up the Block Unlock
command.
■ The second Bus Write cycle latches the block
address.
The Lock Status can be monitored for each block
using the Read Block Signature command. Table.
9 shows the Lock Status after issuing a Block Un-
lock command. Refer to the section, Block Lock-
ing, for a detailed explanation.
Two write cycles are required to issue the Protec-
tion Register Program command.
■ The first bus cycle sets up the Protection
Register Program command.
14/56
M36W216T, M36W216B
Block Lock-Down Command. A locked block
cannot be Programmed or Erased, or have its
■ The second Bus Write cycle latches the block
address.
Lock status changed when WP is low, V . When
IL
The Lock Status can be monitored for each block
using the Read Block Signature command.
Locked blocks revert to the protected (and not
locked) state when the device is reset on power-
down. Table. 9 shows the Lock Status after issuing
a Block Lock-Down command. Refer to the sec-
tion, Block Locking, for a detailed explanation.
WP is high, V the Lock-Down function is dis-
IH,
abled and the locked blocks can be individually un-
locked by the Block Unlock command.
Two Bus Write cycles are required to issue the
Block Lock command.
■ The first bus cycle sets up the Block Lock
command.
Table 3. Commands
Bus Write Operations
No. of
Cycles
1st Cycle
2nd Cycle
Addr
3nd Cycle
Addr
Commands
Bus
Op.
Bus
Op.
Bus
Op.
Addr Data
Data
Data
Read
Addr
Read Memory Array
Read Status Register
1+
1+
Write
Write
X
X
FFh
70h
Data
Read
Read
Status
Register
X
Signature
Read Electronic Signature
Read CFI Query
Erase
1+
1+
2
Write
Write
Write
X
55h
X
90h
98h
20h
Read
Read
Write
Signature
Query
D0h
(1)
Addr
CFI Addr
Block
Addr
40h or
10h
Data
Input
Program
2
3
Write
Write
X
X
Write
Write
Addr
Data
Input
Data
Input
(2)
30h
Addr 1
Write
Addr 2
Double Word Program
Clear Status Register
Program/Erase Suspend
Program/Erase Resume
1
1
1
Write
Write
Write
X
X
X
50h
B0h
D0h
Block
Address
Block Protect
Block Unprotect
Block Lock
2
2
2
2
Write
Write
Write
Write
X
X
X
X
60h
60h
60h
C0h
Write
Write
Write
Write
01h
D0h
2Fh
Block
Address
Block
Address
Protection Register
Program
Data
Input
Address
Note: X = Don’t Care.
1. The signature addresses are listed in Tables 4, 5 and 6.
2. Addr 1 and Addr 2 must be consecutive Addresses differing only for A0.
15/56
M36W216T, M36W216B
Table 4. Read Electronic Signature
Code
Device
EF GF WF A0 A1 A2-A7
A8-A11
A12-A20
DQ0-DQ7 DQ8-DQ15
Manufacture
Code
V
V
V
V
V
V
0
Don’t Care Don’t Care
20h
00h
IL
IL
IH
IL
IL
V
V
V
V
V
V
V
V
M36W216T
M36W216B
0
0
Don’t Care Don’t Care
Don’t Care Don’t Care
CEh
CFh
88h
88h
IL
IL
IL
IL
IH
IH
IH
IH
IL
IL
Device
Code
V
Note: RPF = V
.
IH
Table 5. Read Block Signature
Block Status
Locked Block
EF
GF WF A0
A1 A2-A7
A8-A20
A12-A20
DQ0 DQ1 DQ2-DQ15
V
V
V
V
V
V
V
V
V
0
0
Don’t Care Block Address
Don’t Care Block Address
1
0
0
0
00h
00h
IL
IL
IL
IH
IH
IL
IL
IH
IH
V
Unlocked Block
IL
Locked-Down
Block
(1)
V
V
V
V
V
0
Don’t Care Block Address
1
00h
IL
IL
IH
IL
IH
X
Note: 1. A Locked Block can be protected ”DQ0 = 1” or unprotected ”DQ0 = 0”; see Block Locking section.
Table 6. Read Protection Register and Lock Register
Word
EF GF WF A0-A7
A8-A20
DQ0
DQ1
DQ2
DQ3-DQ7 DQ8-DQ15
OTP Prot.
data
Security
Lock
V
V
V
80h Don’t Care
0
00h
00h
IL
IL
IH
prot. data
ID data
ID data
ID data
ID data
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Unique ID 0
Unique ID 1
Unique ID 2
Unique ID 3
OTP 0
81h Don’t Care
82h Don’t Care
83h Don’t Care
84h Don’t Care
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IH
IH
IH
IH
IH
IH
IH
IH
ID data
ID data
85h Don’t Care OTP data
86h Don’t Care OTP data
87h Don’t Care OTP data
88h Don’t Care OTP data
OTP data
OTP data
OTP data
OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP 1
OTP 2
OTP 3
16/56
M36W216T, M36W216B
Table 7. Program, Erase Times and Program/Erase Endurance Cycles
Flash Memory
Parameter
Word Program
Test Conditions
Unit
Min
Typ
10
Max
200
200
5
V
= V
µs
PPF
DDF
V
V
= 12V ±5%
= 12V ±5%
= V
Double Word Program
10
µs
PPF
0.16
0.32
0.02
0.04
1
s
PPF
Main Block Program
V
5
s
PPF
DDF
V
V
V
= 12V ±5%
4
s
PPF
Parameter Block Program
Main Block Erase
V
= V
4
s
PPF
DDF
= 12V ±5%
10
10
10
10
s
PPF
V
= V
1
s
PPF
DDF
= 12V ±5%
0.8
0.8
s
s
PPF
Parameter Block Erase
V
= V
DDF
PPF
Program/Erase Cycles (per Block)
100,000
cycles
Flash Block Locking
Unlocked State. Unlocked blocks (states (0,0,0),
(1,0,0) (1,1,0)), can be programmed or erased. All
unlocked blocks return to the Locked state when
the device is reset or powered-down. The status of
an unlocked block can be changed to Locked or
Locked-Down using the appropriate software
commands. A locked block can be unlocked by is-
suing the Unlock command.
Lock-Down State. Blocks that are Locked-Down
(state (0,1,1))are protected from program and
erase operations (as for Locked blocks) but their
Lock status cannot be changed using software
commands alone. ALocked or Unlocked block can
be Locked-Down by issuing the Lock-Down com-
mand. Locked-Down blocks revert to the Locked
state when the device is reset or powered-down.
The Flash Memory features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency. This locking
scheme has three levels of protection.
■ Lock/Unlock - this first level allows software-
only control of block locking.
■ Lock-Down - this second level requires
hardware interaction before locking can be
changed.
■ V
PPF
≤ V
- the third level offers a complete
PPLK
hardware protection against programand erase
on all blocks.
The locking status of each block can be set to
Locked, Unlocked, and Lock-Down. The following
sections explain the operation of the locking sys-
tem. Table 7, defines all of the possible locking
states (WP, DQ1, DQ0), and Appendix C, Figure
30, shows a flowchart for the locking operations.
The Lock-Down function is dependent on the WPF
input pin. When WPF=0 (V ), the blocks in the
IL
Lock-Down state (0,1,1) are protected from pro-
gram, erase and lock status changes. When
WPF=1 (V ) the Lock-Down function is disabled
Locked State. The default status of all blocks on
power-up or reset is Locked (states (0,0,1) or
(1,0,1)). Locked blocks are fully protected from
any program or erase. Any program or erase oper-
ations attempted on a locked block will return an
error in the Status Register. The Status of a
Locked block can be changed to Unlocked or
Lock-Down using the appropriate software com-
mands. An Unlocked block can be Locked by issu-
ing the Lock command.
IH
(1,1,1) and Locked-Down blocks can be individu-
ally unlocked to the (1,1,0) state by issuing the
software command, where they can be erased and
programmed. These blocks can then be re-locked
(1,1,1) and unlocked (1,1,0) as desired while WPF
remains high. When WPF is low, blocks that were
previously Locked-Down return to the Lock-Down
state (0,1,1) regardless of any changes made
while WPF was high. Device reset or power-down
resets all blocks, including those in Lock-Down, to
the Locked state.
17/56
M36W216T, M36W216B
Reading a Block’s Lock Status. The lock status
of every block can be read in the Read Electronic
Signature mode of the device. To enter this mode
write 90h to the device. Subsequent reads at Block
Address 00002h will output the lock status of that
block. The lock status is represented by DQ0 and
DQ1. DQ0 indicates the Block Lock/Unlock status
and is set by the Lock command and cleared by
the Unlock command. it is also automatically set
when entering Lock-Down. DQ1 indicates the
Lock-Down status and is set by the Lock-Down
command. It cannot be cleared by software, only
by a device reset or power-down.
To change block locking during an erase opera-
tion, first write the Erase Suspend command, then
check the status register until it indicates that the
erase operation has been suspended. Next write
the desired Lock command sequence to a block
and the lock status will be changed. After complet-
ing any desired lock, read, or program operations,
resume the erase operation with the Erase Re-
sume command.
If a block is locked or locked-down during an erase
suspend of the same block, the locking status bits
will be changed immediately, but when the erase
is resumed, the erase operation will complete.
Locking Operations During Erase Suspend.
Locking operations cannot be performed during a
program suspend. Refer to Appendix D, Com-
mand Interface and Program/Erase Controller
State, for detailed information on which com-
mands are valid during erase suspend.
Changes to block lock status can be performed
during an erase suspend by using the standard
locking command sequences to unlock, lock or
lock-down a block. This is useful in the case when
another block needs to be updated while an erase
operation is in progress.
Table 8. Block Lock Status
Item
Address
Data
Block Lock Configuration
Block is Unlocked
xx002
LOCK
DQ0=0
DQ0=1
DQ1=1
Block is Locked
Block is Locked-Down
Table 9. Lock Status
Current
(1)
Next Lock Status
(WPF, DQ1, DQ0)
(1)
Lock Status
(WPF, DQ1, DQ0)
After
Block Lock
Command
After
Block Unlock
Command
After Block
Lock-Down
Command
Program/Erase
After
WPF transition
Current State
Allowed
1,0,0
yes
no
1,0,1
1,0,1
1,1,1
1,1,1
0,0,1
0,0,1
1,0,0
1,0,0
1,1,0
1,1,0
0,0,0
0,0,0
1,1,1
1,1,1
1,1,1
1,1,1
0,1,1
0,1,1
0,0,0
0,0,1
0,1,1
0,1,1
1,0,0
1,0,1
(2)
1,0,1
1,1,0
1,1,1
0,0,0
yes
no
yes
no
(2)
0,0,1
(3)
0,1,1
no
0,1,1
0,1,1
0,1,1
1,1,1 or 1,1,0
Note: 1. The lock status is defined by the write protect pin and by DQ1 (‘1’ for a locked-down block) and DQ0 (‘1’ for a locked block) as read
in the Read Electronic Signature command with A1 = V and A0 = V
.
IL
IH
2. All blocks are locked at power-up, so the default configuration is 001 or 101 according to WPF status.
3. A WPF transition to V on a locked block will restore the previous DQ0 value, giving a 111 or 110.
IH
18/56
M36W216T, M36W216B
Flash Status Register
pend command being issued therefore the memo-
ry may still complete the operation rather than
entering the Suspend mode.
When a Program/Erase Resume command is is-
sued the Erase Suspend Status bit returns Low.
The Status Register provides information on the
current or previous Program or Erase operation.
The various bits convey information and errors on
the operation. To read the Status register the
Read StatusRegister command can be issued, re-
fer to Read Status Register Command section. To
output the contents, the Status Register is latched
on the falling edge of the Chip Enable or Output
Enable signals, and can be read until Chip Enable
or Output Enable returns to V . Either Chip En-
able or Output Enable must be toggled to update
the latched data.
Bus Read operations from any address always
read the Status Register during Program and
Erase operations.
Erase Status (Bit 5). The EraseStatus bit can be
used to identify if the memory has failed to verify
that the block has erased correctly. When the
Erase Status bit is High (set to ‘1’), the Program/
Erase Controller has applied the maximum num-
ber of pulses to the block and still failed to verify
that the block has erased correctly. The Erase Sta-
tus bit should be read once the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive).
Once set High, the Erase Status bit can only be re-
set Low by a Clear Status Register command or a
hardware reset. If set High it should be reset be-
fore a new Program or Erase command is issued,
otherwise the new command will appear to fail.
Program Status (Bit 4). The Program Status bit
is used to identify a Program failure. When the
Program Status bit is High (set to ‘1’), the Pro-
gram/Erase Controller has applied the maximum
number of pulses to the byte and still failed to ver-
ify that it has programmed correctly. The Program
Status bit should be read once the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive).
Once set High, the Program Status bit can only be
reset Low by a Clear Status Register command or
a hardware reset. If set High it should be reset be-
fore a new command is issued, otherwise the new
command will appear to fail.
IH
The bits in the Status Register are summarized in
Table 10, Status Register Bits. Refer to Table 10
in conjunction with the following text descriptions.
Program/Erase Controller Status (Bit 7). ThePro-
gram/Erase Controller Status bit indicates whether
the Program/Erase Controller is active or inactive.
When the Program/Erase Controller Status bit is
Low (set to ‘0’), the Program/Erase Controller is
active; when the bit is High (set to ‘1’), the Pro-
gram/Erase Controller is inactive, and the device
is ready to process a new command.
The Program/Erase Controller Status is Low im-
mediately after a Program/Erase Suspend com-
mand is issued until the Program/Erase Controller
pauses. After the Program/Erase Controller paus-
es the bit is High.
During Program, Erase, operations the Program/
Erase ControllerStatus bit can be polled to find the
end of the operation. Other bits in the Status Reg-
ister should not be tested until the Program/Erase
Controller completes the operation and the bit is
High.
V
Status (Bit 3). The V
Status bit can be
PPF
PPF
used to identify an invalid voltage on the V
pin
PPF
during Program and Erase operations. The V
PPF
pin is only sampled at the beginning of a Program
or Erase operation. Indeterminate results can oc-
After the Program/Erase Controller completes its
cur if V
becomes invalid during an operation.
PPF
operation the Erase Status, Program Status, V
PPF
Status and Block Lock Status bits should be tested
When the V
Status bit is Low (set to ‘0’), the
PPF
for errors.
voltage on the V
voltage; when the V
pin was sampled at a valid
PPF
Status bit is High (set to
PPF
Erase Suspend Status (Bit 6). The Erase Sus-
pend Status bit indicates that an Erase operation
has been suspended or is going to be suspended.
When the Erase Suspend Status bit is High (set to
‘1’), a Program/Erase Suspend command has
been issued and the memory is waiting for a Pro-
gram/Erase Resume command.
‘1’), the V
PPF
pin has a voltage that is below the
PPF
V
Lockout Voltage, V
, the memory is pro-
PPLK
tected and Program and Erase operations cannot
be performed.
Once set High, the V
set Low by a Clear Status Register command or a
hardware reset. If set High it should be reset be-
fore a new Program or Erase command is issued,
otherwise the new command will appear to fail.
Status bit can only be re-
PPF
The Erase Suspend Status should only be consid-
ered validwhen theProgram/Erase Controller Sta-
tus bit is High (Program/Erase Controller inactive).
Bit 7 is set within 30µs of the Program/Erase Sus-
19/56
M36W216T, M36W216B
Program Suspend Status (Bit 2). The Program
Suspend Status bit indicates that a Program oper-
ation has been suspended. When the Program
Suspend Status bit is High (set to ‘1’), a Program/
Erase Suspend command has been issued and
the memory is waiting for a Program/Erase Re-
sume command. The Program Suspend Status
should only be considered valid when the Pro-
gram/Erase Controller Status bit is High (Program/
Erase Controller inactive). Bit 2 is set within 5µs of
the Program/Erase Suspend command being is-
sued therefore the memory may still complete the
operation rather than entering the Suspend mode.
Block Protection Status (Bit 1). The Block Pro-
tection Status bit can be used to identify if a Pro-
gram or Erase operation has tried to modify the
contents of a locked block.
When the Block Protection Status bit is High (set
to ‘1’), a Program or Erase operation has been at-
tempted on a locked block.
Once set High, the Block Protection Status bit can
only be reset Low by a Clear Status Register com-
mand or a hardware reset. If set High it should be
reset before a new command is issued, otherwise
the new command will appear to fail.
Reserved (Bit 0). Bit 0 of the Status Register is
reserved. Its value must be masked.
When a Program/Erase Resume command is is-
sued theProgram Suspend Status bit returns Low.
Note: Refer to Appendix C, Flowcharts and
Pseudo Codes, for using the Status Register.
Table 10. Status Register Bits
Bit
Name
Logic Level
Definition
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
Ready
7
P/E.C. Status
Busy
Suspended
6
5
4
3
2
Erase Suspend Status
Erase Status
In progress or Completed
Erase Error
Erase Success
Program Error
Program Status
Program Success
V
V
Invalid, Abort
OK
PPF
PPF
V
Status
PPF
Suspended
Program Suspend Status
In Progress or Completed
Program/Erase on protected block, Abort
No operation to protected blocks
1
0
Block Protection Status
Reserved
Note: Logic level ’1’ is High, ’0’ is Low.
SRAM Operations
V , Chip Enable, E2S, is at V , and ByteEnables,
IL IH
UBS and LBS are at V .
IL
There are five standard operations that control the
SRAM component. These are Bus Read, Bus
Write, Standby/Power-down, Data Retention and
Output Disable. A summary is shown in Table 2,
Main Operation Modes
Read. Read operations are used to output the
contents of the SRAM Array. The SRAM is in Read
mode whenever Write Enable, WS, is at V , Out-
Valid data will be availableon the output pins after
a time of t after the last stable address. If the
AVQV
Chip Enable or Output Enable access times are
not met, data access will be measured from the
limiting parameter (t
, t
, or t
) rath-
GLQV
E1LQV E2HQV
er than the address. Data out may be indetermi-
nate at t , t and t , but data lines
E1LQX E2HQX
GLQX
IH
will always be valid at t
13 and 14).
(see Table 19, Figures
AVQV
put Enable, GS, is at V , Chip Enable, E1S, is at
IL
20/56
M36W216T, M36W216B
Write. Write operations are used to write data to
the SRAM. The SRAM is in Write mode whenever
first, and remain valid for t
, t
or t
WHDX E1HAX E2LAX
(see Table 20, Figure 16, 17, 18 and 19).
WS and E1S are at V , and E2S is at V . Either
IL
IH
Standby/Power-Down. The SRAM component
has a chip enabled power-down feature which in-
vokes an automatic standby mode (see Table 19,
Figure 15). The SRAM is in Standby mode when-
the Chip Enable inputs, E1S and E2S, or the Write
Enable input, WS, must be deasserted during ad-
dress transitions for subsequent write cycles.
A Write operation is initiated when E1S is at V ,
ever either Chip Enable is deasserted, E1S at V
IL
IH
E2S is at V and WS is at V . The data is latched
or E2S at V . It is also possible when UBS and
IL
IH
IL
o the falling edge of E1S, the rising edge of E2S or
the falling edge of WS, whichever occurs last. The
Write cycle is terminated on the rising edge of
E1S, the rising edge of WS or the falling edge of
E2S, whichever occurs first.
LBS are at V .
Data Retention. The SRAM data retention per-
formances as V
in Table 21 and Figure 20, 21. In E1S controlled
data retention mode, the minimum standby current
mode is entered when E1S ≥ V
IH
go down to V are described
DDS
DR
If the Output is enabled (E1S=V , E2S=V and
– 0.2V and
DDS
IL
IH
GS=V ), then WS will return the outputs to high
E2S ≤ 0.2V or E2S ≥ V
– 0.2V. In E2S con-
IL
DDS
impedance within t
of its falling edge. Care
trolled data retention mode, minimum standby cur-
WLQZ
must be taken to avoid bus contention in this type
rent mode is entered when E2S ≤ 0.2V.
Output Disable. The data outputs are high im-
of operation. The Data input must be valid for t
D-
before the rising edge of Write Enable, for
VWH
t
pedance when the Output Enable, GS, is at V
IH
before the rising edge of E1S or for t
DVE1H
DVE2L
with Write Enable, WS, at V .
IH
before the falling edge of E2S, whichever occurs
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 11. Absolute Maximum Ratings
Value
Symbol
Parameter
Unit
Min
–40
–40
–55
–0.5
–0.6
–0.6
–0.5
Max
85
(1)
T
°C
°C
°C
V
A
Ambient Operating Temperature
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Flash Supply Voltage
Program Voltage
T
125
155
BIAS
T
STG
V
V
+0.3
DDQF
IO
V
, V
3.9
13
V
DDF DDQF
V
PPF
V
DDS
V
SRAM Supply Voltage
3.9
V
Note: 1. Depends on range.
21/56
M36W216T, M36W216B
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table 12,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
Table 12. Operating and AC Measurement Conditions
SRAM
Flash Memory
85/100
Parameter
70
Units
Min
–
Max
–
Min
2.7
Max
3.3
3.3
85
V
V
Supply Voltage
V
V
DDF
V
Supply Voltage
2.7
– 40
3.3
85
2.7
DDQ F = DDS
Ambient Operating Temperature
– 40
°C
pF
ns
V
Load Capacitance (C )
50
50
L
Input Rise and Fall Times
Input Pulse Voltages
5
5
0 to V
0 to V
DDQF
DDQF
V
/2
DDQF
V
/2
DDQF
Input and Output Timing Ref. Voltages
V
Figure 7. AC Measurement I/O Waveform
Figure 8. AC Measurement Load Circuit
V
DDQF
V
DDQ
V
/2
DDQ
V
DDQF
0V
V
DDF
25kΩ
AI90258
DEVICE
UNDER
TEST
Note: V
means V = V
DDQF DDS
DDQ
C
L
25kΩ
0.1µF
0.1µF
C
includes JIG capacitance
AI90259
L
Table 13. Device Capacitance
Symbol
Parameter
Input Capacitance
Output Capacitance
Test Condition
Typ
12
Max
14
Unit
C
V
= 0V, f=1 MHz
= 0V, f=1 MHz
pF
pF
IN
IN
C
OUT
V
OUT
20
22
Note: Sampled only, not 100% tested.
22/56
M36W216T, M36W216B
Table 14. DC Characteristics
Symbol
Parameter
Device
Test Condition
Min
Typ
Max
Unit
Flash &
SRAM
I
LI
Input Leakage Current
0V ≤ V ≤ V
±2
µA
IN
DDQF
0V ≤ V
SRAM Outputs Hi-Z
≤ V
Flash &
SRAM
OUT
DDQF,
I
Output Leakage Current
±10
50
50
50
2
µA
µA
µA
µA
mA
mA
mA
mA
mA
µA
µA
LO
EF = V ± 0.2V
DDQF
Flash
SRAM
Flash
15
20
15
1
V
= V
max
DDF
DDQF
I
I
V
Standby Current
DD
DDS
E1S = E2S ≥ V
– 0.2V
DDS
or E2S ≤ 0.2V
Supply Current
(Reset)
RPF = V ± 0.2V
DDD
SSF
V
= V or V
IL IH,
IN
I
= 0 mA, cycle time = 1µs
IO
I
Supply Current
SRAM
DD
V
= V or V
IL IH,
IN
7
12
20
20
20
50
50
I
= 0 mA, min cycle time
IO
Supply Current
(Read)
I
I
EF = V , GF = V f = 5 MHz
IL IH,
Flash
Flash
Flash
Flash
Flash
10
10
5
DDR
Supply Current
(Program)
Program in progress
Erase in progress
DDW
Supply Current
(Erase)
I
DDE
Supply Current
(Erase Suspend)
I
Erase Suspend in progress
Program Suspend in progress
DDES
Supply Current
(Program Suspend)
I
DDWS
V
V
≤ V
DDQF
0.2
100
0.2
5
µA
µA
µA
µA
PPF
Program Current
(Standby)
I
Flash
Flash
PPS
V
> V
400
5
PPF
DDF
≤ V
PPF
DDQF
Program Current
(Read)
I
PPR
V
= V
100
400
PPF
DDF
V
= 12V ± 0.6V
Program Current
(Program)
PPF
I
Flash
Flash
10
10
mA
PPW
Program in progress
V
= 12V ± 0.6V
Program Current
(Erase)
PPF
I
mA
V
PPE
Program in progress
Flash &
SRAM
V
V
V
= V
= V
≥ 2.7V
≥ 2.7V
Input Low Voltage
Input High Voltage
Output Low Voltage
–0.5
2.2
0.8
IL
DDQF
DDQF
DDS
V
Flash &
SRAM
DDQF
+0.4
V
V
IH
DDS
V
DDQF
V
V
= V
= V min
DDS DD
Flash &
SRAM
DDQF
V
0.1
V
OL
I
= 100µA
OL
= V
= V min
DD
V
Flash &
SRAM
DDQF
DDS
DDQ
V
Output High Voltage
V
OH
I
= –100µA
–0.1
OH
23/56
M36W216T, M36W216B
Symbol
Parameter
Device
Test Condition
Min
Typ
Max
Unit
Program Voltage
(Program or Erase
operations)
V
Flash
1.65
3.6
V
PPL
Program Voltage
(Program or Erase
operations)
V
Flash
Flash
Flash
11.4
12.6
V
V
V
PPH
Program Voltage
(Program and Erase
lock-out)
V
1
2
PPLK
V
Supply Voltage
DDF
V
(Program and Erase
lock-out)
LKO
24/56
M36W216T, M36W216B
Figure 9. Flash Read Mode AC Waveforms
tAVAV
VALID
A0-A19
tAVQV
tAXQX
EF
tELQV
tELQX
tEHQX
tEHQZ
GF
tGLQV
tGHQX
tGHQZ
tGLQX
VALID
DQ0-DQ15
OUTPUTS
ENABLED
ADDR. VALID
CHIP ENABLE
DATA VALID
STANDBY
AI90260
Table 15. Flash Read AC Characteristics
Flash
Unit
Symbol
Alt
Parameter
85
85
85
100
100
100
t
t
Address Valid to Next Address Valid
Address Valid to Output Valid
Min
Max
Min
ns
ns
ns
AVAV
RC
t
t
ACC
AVQV
(1)
t
Address Transition to Output Transition
Chip Enable High to Output Transition
Chip Enable High to Output Hi-Z
0
0
0
0
t
OH
OH
AXQX
(1)
t
Min
Max
Max
Min
Min
Max
Max
Min
ns
ns
ns
ns
ns
ns
ns
ns
t
EHQX
(1)
(2)
(1)
(1)
(1)
(2)
(1)
t
20
85
0
30
100
0
t
HZ
EHQZ
t
Chip Enable Low to Output Valid
t
t
CE
ELQV
ELQX
t
LZ
Chip Enable Low to Output Transition
Output Enable High to Output Transition
Output Enable High to Output Hi-Z
Output Enable Low to Output Valid
Output Enable Low to Output Transition
t
0
0
t
OH
GHQX
t
20
20
0
30
35
0
t
DF
OE
GHQZ
t
t
GLQV
t
t
OLZ
GLQX
Note: 1. Sampled only, not 100% tested.
2. GF may be delayed by up to t
- t
after the falling edge of EF without increasing t
.
ELQV
ELQV GLQV
25/56
M36W216T, M36W216B
Figure 10. Flash Write AC Waveforms, Write Enable Controlled
26/56
M36W216T, M36W216B
Table 16. Flash Write AC Characteristics, Write Enable Controlled
Flash
Unit
Symbol
Alt
Parameter
85
85
45
45
0
100
100
50
t
t
Write Cycle Time
Min
Min
Min
Min
Min
Min
Min
Min
ns
ns
ns
ns
ns
ns
ns
ns
AVAV
WC
t
t
t
Address Valid to Write Enable High
Data Valid to Write Enable High
Chip Enable Low to Write Enable Low
Chip Enable Low to Output Valid
AVWH
AS
DS
CS
t
t
50
DVWH
t
0
ELWL
ELQV
t
85
100
(1,2)
Output Valid to V
Low
0
0
0
0
t
PPF
QVVPL
t
Output Valid to Write Protect Low
High to Write Enable High
QVWPL
(1)
t
V
PPF
200
200
t
VPS
VPHWH
t
t
t
Write Enable High to Address Transition
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Output Enable Low
Write Enable High to Output Enable Low
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Protect High to Write Enable High
Min
Min
Min
Min
Min
Min
Min
Min
0
0
ns
ns
ns
ns
ns
ns
ns
ns
WHAX
AH
t
t
0
0
WHDX
WHEH
DH
CH
t
0
0
t
25
20
25
45
45
30
30
30
50
50
WHEL
t
WHGL
WHWL
t
t
WPH
t
t
WLWH
WP
t
WPHWH
Note: 1. Sampled only, not 100% tested.
2. Applicable if V is seen as a logic input (V
< 3.6V).
PPF
PPF
27/56
M36W216T, M36W216B
Figure 11. Flash Write AC Waveforms, Chip Enable Controlled
28/56
M36W216T, M36W216B
Table 17. Flash Write AC Characteristics, Chip Enable Controlled
Flash
Unit
Symbol
Alt
Parameter
85
85
45
45
0
100
100
50
50
0
t
t
Write Cycle Time
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVAV
WC
t
t
t
Address Valid to Chip Enable High
Data Valid to Chip Enable High
AVEH
AS
DS
AH
t
t
t
DVEH
EHAX
t
t
Chip Enable High to Address Transition
Chip Enable High to Data Transition
Chip Enable High to Chip Enable Low
Chip Enable High to Output Enable Low
Chip Enable High to Write Enable High
Chip Enable Low to Chip Enable High
Chip Enable Low to Output Valid
0
0
EHDX
DH
t
t
CPH
25
25
0
30
30
0
EHEL
t
EHGL
t
t
WH
EHWH
t
t
CP
45
85
50
100
ELEH
ELQV
t
(1,2)
Output Valid to V
Low
PPF
Min
Min
Min
Min
Min
0
0
0
0
ns
ns
ns
ns
ns
t
QVVPL
t
Data Valid to Write Protect Low
V High to Chip Enable High
PPF
QVWPL
(1)
t
200
0
200
0
t
VPS
VPHEH
t
t
CS
Write Enable Low to Chip Enable Low
Write Protect High to Chip Enable High
WLEL
t
45
50
WPHEH
Note: 1. Sampled only, not 100% tested.
2. Applicable if V is seen as a logic input (V
< 3.6V).
PPF
PPF
29/56
M36W216T, M36W216B
Figure 12. Flash Power-Up and Reset AC Waveforms
WF,EF,GF
tPHWL
tPHWL
tPHEL
tPHGL
tPHEL
tPHGL
RPF
tVDHPH
tPLPH
Reset
VDDF, VDDQF
Power-Up
AI90263
Table 18. Flash Power-Up and Reset AC Characteristics
Flash
Symbol
Parameter
Test Condition
Unit
85
100
During
Program and
Erase
t
t
t
PHWL
Min
50
50
µs
Reset High to Write Enable Low, Chip Enable
Low, Output Enable Low
PHEL
PHGL
others
Min
Min
30
30
ns
ns
(1,2)
(3)
Reset Low to Reset High
100
100
t
PLPH
Supply Voltages High to Reset High
Min
50
50
µs
t
VDHPH
Note: 1. The device Reset is possible but not guaranteed if t
2. Sampled only, not 100% tested.
< 100ns.
PLPH
3. It is important to assert RPF in order to allow proper CPU initialization during power up or reset.
30/56
M36W216T, M36W216B
Figure 13. SRAM Read Mode AC Waveforms, Address Controlled with UBS = LBS = V
IL
tAVAV
VALID
A0-A16
tAVQV
tAXQX
DQ0-DQ15
DATA VALID
DATA VALID
AI90264
Note: E1S = Low, E2S = High, GS = Low, WS = High.
Figure 14. SRAM Read AC Waveforms, E1S, E2S or GS Controlled
tAVAV
A0-A16
E1S
VALID
tAVQV
tE1LQV
tAXQX
tE1HQZ
tE1LQX
tE2HQV
tE2LQZ
tBHQZ
E2S
tE2HQX
tBLQV
UBS, LBS
tBLQX
tGLQV
tGHQZ
GS
tGLQX
DQ0-DQ15
DATA VALID
AI90265
Note: Write Enable (WS) = High.
31/56
M36W216T, M36W216B
Figure 15. SRAM Standby AC Waveforms
E1S
E2S
tPU
tPD
I
DD
50%
AI90266
Table 19. SRAM Read AC Characteristics
SRAM
Max
Symbol
Alt
Parameter
Unit
Min
t
t
Read Cycle Time
70
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVAV
RC
t
t
ACC
Address Valid to Output Valid
70
AVQV
t
t
OH
Address Transition to Output Transition
UBS, LBS Disable to Hi-Z Output
UBS, LBS Access Time
0
AXQX
t
t
BHZ
25
40
BHQZ
t
t
BLQV
AB
t
t
BLZ
UBS, LBS Enable to Low-Z Output
Chip Enable 1 High to Output Hi-Z
Chip Enable 1 Low to Output Valid
Chip Enable 1 Low to Output Transition
Chip Enable 2 High to Output Valid
Chip Enable 2 High to Output Transition
Chip Enable 2 Low to Output Hi-Z
Output Enable High to Output Hi-Z
Output Enable Low to Output Valid
Output Enable Low to Output Transition
10
BLQX
t
t
CHZ1
10
70
E1HQZ
t
t
ACS1
E1LQV
t
t
10
5
E1LQX
CLZ1
t
t
t
ACS2
70
E2HQV
E2HQX
t
CLZ2
t
t
CHZ2
10
25
35
E2LQZ
t
t
OHZ
GHQZ
t
t
GLQV
GLQX
OE
t
t
OLZ
5
0
(1)
Chip Enable 1 High or Chip Enable 2 Low to Power Down
Chip Enable 1 Low or Chip Enable 2 High to Power Up
70
ns
ns
t
t
PD
(1)
PU
Note: 1. Sampled only. Not 100% tested.
32/56
M36W216T, M36W216B
Figure 16. SRAM Write AC Waveforms, WS Controlled with GS Low
tAVAV
A0-A16
VALID
tAVWH
tE1LWH
tAVE1L
tWHAX
E1S
E2S
tAVE2H
tE2HWH
tBLWH
UBS, LBS
WS
tAVWL
tWLWH
tWLQZ
tWHQX
tDVWH
INPUT VALID
tWHDX
DQ0-DQ15
AI90267
Note: Output Enable (GS) = Low.
Figure 17. SRAM Write AC Waveforms, WS Controlled with GS High
tAVAV
A0-A16
VALID
tAVWH
tE1LWH
tAVE1L
tWHAX
E1S
E2S
tAVE2H
tE2HWH
tBLWH
UBS, LBS
tAVWL
tWLWH
WS
GS
tWHQX
tWHDX
tGHQZ
tDVWH
INPUT VALID
DQ0-DQ15
AI90268
33/56
M36W216T, M36W216B
Figure 18. SRAM Write Cycle Waveform, UBS and LBS Controlled
tAVAV
A0-A16
E1S
VALID
tE1LWH
tE1HAX
tAVWH
E2S
tE2HWH
tBLWH
tAVWL
UBS, LBS
tWLWH
WS
tDVWH
DATA VALID
tWHDX
DQ0-DQ15
AI90269
Figure 19. SRAM Write AC Waveforms, E1S Controlled
tAVAV
A0-A16
E1S
VALID
tE1LWH
tAVE1L
tE1HAX
E2S
tBLWH
UBS, LBS
tAVWL
WS
tDVE1H
INPUT VALID
tWHDX
DQ0-DQ15
AI90270
Note: Output Enable (GS) = High.
34/56
M36W216T, M36W216B
Table 20. SRAM Write AC Characteristics
SRAM
Unit
Symbol
Alt
Parameter
Min
Max
t
t
Write Cycle Time
70
ns
ns
AVAV
WC
t
t
,
,
AVE1L
t
AS
Address Valid to Beginning of Write
0
AVE2H
t
AVWL
t
t
Address Valid to Write Enable High
UBS, LBS Valid to End of Write
60
60
ns
ns
AVWH
AW
t
t
BLWH
BW
t
,
DVE1H
t
t
,
t
Input Valid to End of Write
30
0
ns
ns
DVE2L
DW
WR
DVWH
t
,
,
E1HAX
t
t
End of Write to Address Change
E2LAX
t
WHAX
t
t
t
Chip Enable 1 Select to End of Write
Chip Enable 2 Select to End of Write
Write Enable High to Input Transition
Write Enable Low to Output Hi-Z
Write Enable Pulse Width
60
60
0
ns
ns
ns
ns
ns
E1LWH
CW1
CW2
t
E2HWH
t
t
DH
WHDX
t
t
25
WLQZ
WHZ
t
t
WP
50
WLWH
35/56
M36W216T, M36W216B
Figure 20. SRAM Low V
Data Retention AC Waveforms, E1S Controlled
DDS
DATA RETENTION MODE
V
DDS
2.8 V
E2S
tCDR
tR
V
≥ 1.5V
DR
V
DR
E2S ≤ 0.2V
0.4 V
V
SSS
AI90271
Figure 21. SRAM Low V
Data Retention AC Waveforms, E2S Controlled
DDS
tCDR
DATA RETENTION MODE
tR
V
DDS
2.8 V
V
≥ 1.5V
DR
V
DR
E1S ≥ V
– 0.2V
DDS
E1S
V
SSS
AI90272
Table 21. SRAM Low V
Data Retention Characteristic
DDS
Symbol
Parameter
Test Condition
Min
Max
Unit
V
= 2.5V, E1S ≥ V
– 0.2V,
DDS
DDS
I
Supply Current (Data Retention)
15
µA
DDDR
E2S ≥ V
– 0.2V or E2S ≤ 0.2V
– 0.2V, E2S ≤ 0.2V
DDS
DDS
V
E1S ≥ V
E1S ≥ V
Supply Voltage (Data Retention)
Chip Disable to Power Down
Operation Recovery Time
1.5
0
3.3
V
DR
t
– 0.2V, E2S ≤ 0.2V
CCS
ns
ns
CDR
t
70
R
Note: 1. All other Inputs V ≤ V –0.2V or V ≤ 0.2V.
IH
DD
IL
2. Sampled only. Not 100% tested.
36/56
M36W216T, M36W216B
PACKAGE MECHANICAL
Figure 22. Stacked LFBGA66 - 8 x 8 ball array, 0.8 mm pitch, Bottom View Package Outline
D
D2
D1
SE
b
E
E1
BALL ”A1”
e
ddd
FE
FD
SD
e
A
A2
A1
BGA-Z12
Note: Drawing is not to scale.
Table 22. Stacked LFBGA66 - 8 x 8 ball array, 0.8 mm pitch, Package Mechanical Data
millimeters
inches
Symbol
Typ
Min
Max
Typ
Min
Max
A
A1
A2
b
1.400
0.0551
0.300
0.0118
1.100
0.0433
0.400
12.000
5.600
8.800
0.300
0.500
0.0157
0.4724
0.2205
0.3465
0.0118
0.0197
D
–
–
–
–
–
–
–
–
D1
D2
ddd
E
–
–
–
–
0.100
0.0039
8.000
5.600
0.800
1.600
1.200
0.400
0.400
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.3150
0.2205
0.0315
0.0630
0.0472
0.0157
0.0157
–
–
–
–
–
–
–
–
–
–
–
–
–
–
E1
e
FD
FE
SD
SE
37/56
M36W216T, M36W216B
Figure 23. Stacked LFBGA66 Daisy Chain - Package Connections (Top view through package)
#3
#4
#1
#2
1
2
3
4
5
6
7
8
A
B
C
D
E
F
G
H
AI90273
38/56
M36W216T, M36W216B
Figure 24. Stacked LFBGA66 Daisy Chain - PCB Connections proposal (Top view through package)
START
POINT
END
POINT
#3
#4
#1
#2
1
2
3
4
5
6
7
8
A
B
C
D
E
F
G
H
AI90274
39/56
M36W216T, M36W216B
PART NUMBERING
Table 23. Ordering Information Scheme
Example:
M36W216T
85 ZA
6
T
Device Type
M36 = MMP (Flash + SRAM)
Operating Voltage
W = V
= 2.7V to 3.3V, V
= V
= 2.7V to 3.3V
DDQF
DDF
DDS
SRAM Chip Size & Organization
2 = 2 Mbit (128K x 16 bit)
Device Function
16 = 16 Mbit (x16), Boot Block
Array Matrix
T = Top Boot
B = Bottom Boot
Speed
85 = 85ns
100 = 100ns
Package
ZA = LFBGA66: 0.8mm pitch
Temperature Range
1 = 0 to 70°C
6 = –40 to 85°C
Option
T = Tape & Reel packing
Devices are shipped from the factory with the memory content bits erased to ’1’.
Table 24. Daisy Chain Ordering Scheme
Example:
M36W216
-ZA T
Device Type
M36W216
Daisy Chain
-ZA = LFBGA66: 0.8mm pitch
Option
T = Tape & Reel Packing
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de-
vice, please contact the STMicroelectronics Sales Office nearest to you.
40/56
M36W216T, M36W216B
REVISION HISTORY
Table 25. Document Revision History
Date
Version
Revision Details
24-May-2001
-01
First Issue
41/56
M36W216T, M36W216B
APPENDIX A. FLASH MEMORY BLOCK ADDRESS TABLES
Table 26. Top Boot Block Addresses,
M36W216T
Table 27. Bottom Boot Block Addresses,
M36W216B
Size
(KWord)
Size
#
Address Range
#
Address Range
(KWord)
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
4
0
4
FF000-FFFFF
FE000-FEFFF
FD000-FDFFF
FC000-FCFFF
FB000-FBFFF
FA000-FAFFF
F9000-F9FFF
F8000-F8FFF
F0000-F7FFF
E8000-EFFFF
E0000-E7FFF
D8000-DFFFF
D0000-D7FFF
C8000-CFFFF
C0000-C7FFF
B8000-BFFFF
B0000-B7FFF
A8000-AFFFF
A0000-A7FFF
98000-9FFFF
90000-97FFF
88000-8FFFF
80000-87FFF
78000-7FFFF
70000-77FFF
68000-6FFFF
60000-67FFF
58000-5FFFF
50000-57FFF
48000-4FFFF
40000-47FFF
38000-3FFFF
30000-37FFF
28000-2FFFF
20000-27FFF
18000-1FFFF
10000-17FFF
08000-0FFFF
00000-07FFF
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
F8000-FFFFF
F0000-F7FFF
E8000-EFFFF
E0000-E7FFF
D8000-DFFFF
D0000-D7FFF
C8000-CFFFF
C0000-C7FFF
B8000-BFFFF
B0000-B7FFF
A8000-AFFFF
A0000-A7FFF
98000-9FFFF
90000-97FFF
88000-8FFFF
80000-87FFF
78000-7FFFF
70000-77FFF
68000-6FFFF
60000-67FFF
58000-5FFFF
50000-57FFF
48000-4FFFF
40000-47FFF
38000-3FFFF
30000-37FFF
28000-2FFFF
20000-27FFF
18000-1FFFF
10000-17FFF
08000-0FFFF
07000-07FFF
06000-06FFF
05000-05FFF
04000-04FFF
03000-03FFF
02000-02FFF
01000-01FFF
00000-00FFF
1
4
2
4
3
4
4
4
5
4
6
4
7
4
8
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
8
7
6
4
5
4
4
4
3
4
2
4
1
4
0
4
42/56
M36W216T, M36W216B
APPENDIX B. COMMON FLASH INTERFACE (CFI)
The Common Flash Interface is a JEDEC ap-
proved, standardized data structure that can be
read from the Flash memory device. It allows a
system software to query the device to determine
various electrical and timing parameters, density
information and functions supported by the mem-
ory. The system can interface easily with the de-
vice, enabling the software to upgrade itself when
necessary.
structure is read from the memory. Tables 28, 29,
30, 31, 32 and 33 show the addresses used to re-
trieve the data.
The CFI data structure also contains a security
area where a 64 bit unique security number is writ-
ten (see Table 33, Security Code area). This area
can be accessed only in Read mode by the final
user. It is impossible to change the security num-
ber after it has been written by ST. Issue a Read
command to return to Read mode.
When the CFI Query Command (RCFI) is issued
the device enters CFI Query mode and the data
Table 28. Query Structure Overview
Offset
00h
Sub-section Name
Description
Reserved for algorithm-specific information
Command set ID and algorithm data offset
Device timing & voltage information
Flash device layout
Reserved
10h
CFI Query Identification String
System Interface Information
Device Geometry Definition
1Bh
27h
Additional information specific to the Primary
Algorithm (optional)
P
A
Primary Algorithm-specific Extended Query table
Alternate Algorithm-specific Extended Query table
Additional information specific to the Alternate
Algorithm (optional)
Note: Query data are always presented on the lowest order data outputs.
Table 29. CFI Query Identification String
Offset
Data
Description
Value
00h
0020h
Manufacturer Code
Device Code
ST
88CEh
88CFh
Top
Bottom
01h
02h-0Fh
10h
reserved Reserved
0051h
”Q”
”R”
”Y”
11h
0052h
0059h
0003h
0000h
0035h
0000h
0000h
0000h
0000h
0000h
Query Unique ASCII String ”QRY”
12h
13h
Primary Algorithm Command Set and Control Interface ID code 16 bit ID code
defining a specific algorithm
Intel
compatible
14h
15h
Address for Primary Algorithm extended Query table (see Table 31)
P = 35h
NA
16h
17h
Alternate Vendor Command Set and Control Interface ID Code second vendor -
specified algorithm supported (0000h means none exists)
18h
19h
Address for Alternate Algorithm extended Query table
(0000h means none exists)
NA
1Ah
Note: Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
43/56
M36W216T, M36W216B
Table 30. CFI Query System Interface Information
Offset
Data
Description
Value
V
V
V
V
Logic Supply Minimum Program/Erase or Write voltage
DD
1Bh
0027h
2.7V
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
Logic Supply Maximum Program/Erase or Write voltage
DD
1Ch
1Dh
1Eh
0036h
00B4h
00C6h
3.6V
11.4V
12.6V
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
[Programming] Supply Minimum Program/Erase voltage
PP
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
[Programming] Supply Maximum Program/Erase voltage
PP
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
n
1Fh
20h
21h
22h
23h
24h
25h
26h
0004h
0004h
000Ah
0000h
0005h
0005h
0003h
0000h
16µs
16µs
1s
Typical time-out per single word program = 2 µs
n
Typical time-out for Double Word Program = 2 µs
n
Typical time-out per individual block erase = 2 ms
n
NA
Typical time-out for full chip erase = 2 ms
n
512µs
512µs
8s
Maximum time-out for word program = 2 times typical
n
Maximum time-out for Double Word Program = 2 times typical
n
Maximum time-out per individual block erase = 2 times typical
n
NA
Maximum time-out for chip erase = 2 times typical
44/56
M36W216T, M36W216B
Table 31. Device Geometry Definition
Offset Word
Data
Description
Value
Mode
n
27h
0015h
2 MByte
Device Size = 2 in number of bytes
28h
29h
0001h
0000h
x16
Async.
Flash Device Interface Code description
2Ah
2Bh
0002h
0000h
n
4
2
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
2Ch
0002h
2Dh
2Eh
001Eh
0000h
Region 1 Information
Number of identical-size erase block = 001Eh+1
31
64 KByte
8
2Fh
30h
0000h
0001h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
31h
32h
0007h
0000h
Region 2 Information
Number of identical-size erase block = 0007h+1
33h
34h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8 KByte
8
2Dh
2Eh
0007h
0000h
Region 1 Information
Number of identical-size erase block = 0007h+1
2Fh
30h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
8 KByte
31
31h
32h
001Eh
0000h
Region 2 Information
Number of identical-size erase block = 001Eh+1
33h
34h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
64 KByte
45/56
M36W216T, M36W216B
Table 32. Primary Algorithm-Specific Extended Query Table
Offset
Data
Description
Value
(1)
P = 35h
(P+0)h = 35h
(P+1)h = 36h
(P+2)h = 37h
(P+3)h = 38h
(P+4)h = 39h
(P+5)h = 3Ah
(P+6)h = 3Bh
(P+7)h = 3Ch
(P+8)h = 3Dh
0050h
0052h
0049h
0031h
0030h
0066h
0000h
0000h
0000h
”P”
”R”
”I”
Primary Algorithm extended Query table unique ASCII string “PRI”
Major version number, ASCII
Minor version number, ASCII
”1”
”0”
Extended Query table contents for Primary Algorithm. Address (P+5)h
contains less significant byte.
bit 0
bit 1
bit 2
bit 3
bit 4
bit 5
bit 6
bit 7
bit 8
Chip Erase supported
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
No
Yes
Yes
No
Suspend Erase supported
Suspend Program supported
Legacy Lock/Unlock supported
Queued Erase supported
No
Instant individual block locking supported (1 = Yes, 0 = No)
Yes
Yes
No
Protection bits supported
Page mode read supported
Synchronous read supported
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
No
bit 31 to 9 Reserved; undefined bits are ‘0’
(P+9)h = 3Eh
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query are always supported
during Erase or Program operation
bit 0
Program supported after Erase Suspend (1 = Yes, 0 = No)
Yes
bit 7 to 1 Reserved; undefined bits are ‘0’
(P+A)h = 3Fh
(P+B)h = 40h
0003h
0000h
Block Lock Status
Defines which bits in the Block Status Register section of the Query are
implemented.
Address (P+A)h contains less significant byte
bit 0
bit 1
Block Lock Status bit active
Block Lock-Down Status bit active
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
Yes
Yes
bit 15 to 2 Reserved for future use; undefined bits are ‘0’
(P+C)h = 41h
(P+D)h = 42h
(P+E)h = 43h
0030h
00C0h
0001h
V
V
Logic Supply Optimum Program/Erase voltage (highest performance)
3V
12V
01
DD
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
Supply Optimum Program/Erase voltage
PP
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
Number of Protection register fields in JEDEC ID space.
”00h,” indicates that 256 protection bytes are available
(P+F)h = 44h
(P+10)h = 45h
(P+11)h = 46h
0080h
0000h
0003h
80h
00h
8 Byte
46/56
M36W216T, M36W216B
Offset
Data
Description
Protection Field 1: Protection Description
Value
(1)
P = 35h
(P+12)h = 47h
0003h
8 Byte
This field describes user-available. One Time Programmable (OTP)
Protection register bytes. Some are pre-programmed with device unique
serial numbers. Others are user programmable. Bits 0–15 point to the
Protection register Lock byte, the section’s first byte.
The following bytes are factory pre-programmed and user-programmable.
bit 0 to 7
Lock/bytes JEDEC-plane physical low address
bit 8 to 15
bit 16 to 23
bit 24 to 31
Lock/bytes JEDEC-plane physical high address
n
”n” such that 2 = factory pre-programmed bytes
n
”n” such that 2 = user programmable bytes
(P+13)h = 48h
Reserved
Note: 1. See Table 29, offset 15 for P pointer definition.
Table 33. Security Code Area
Offset
80h
81h
82h
83h
84h
85h
86h
87h
88h
Data
00XX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
Description
Protection Register Lock
64 bits: unique device number
64 bits: User Programmable OTP
47/56
M36W216T, M36W216B
APPENDIX C. FLASH MEMORY FLOWCHARTS AND PSEUDO CODES
Figure 25. Program Flowchart and Pseudo Code
Start
program_command (addressToProgram, dataToProgram) {:
Write 40h or 10h
writeToFlash (any_address, 0x40) ;
/*or writeToFlash (any_address, 0x10) ; */
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
Write Address
& Data
do {
Read Status
Register
status_register=readFlash (any_address) ;
/* EF or GF must be toggled*/
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
NO
V
Invalid
if (status_register.b3==1) /*V invalid error */
PPF
PPF
b3 = 0
YES
Error (1, 2)
error_handler ( ) ;
NO
NO
Program
Error (1, 2)
if (status_register.b4==1) /*program error */
error_handler ( ) ;
b4 = 0
YES
Program to Protected
Block Error (1, 2)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI90275
Note: 1. Status check of b1 (Protected Block), b3 (V Invalid) and b4 (Program Error) can be made after each program operation or after
PP
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
48/56
M36W216T, M36W216B
Figure 26. Double Word Program Flowchart and Pseudo Code
Start
Write 30h
double_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2)
{
writeToFlash (any_address, 0x30) ;
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
Write Address
& Data 1 (3)
1
2
/*Memory enters read status state after
the Program command*/
Write Address
& Data 2 (3)
do {
status_register=readFlash (any_address) ;
/* EF or GF must be toggled*/
Read Status
Register
NO
NO
NO
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
V
Invalid
if (status_register.b3==1) /*V
error_handler ( ) ;
invalid error */
PPF
PPF
b3 = 0
YES
Error (1, 2)
if (status_register.b4==1) /*program error */
error_handler ( ) ;
Program
b4 = 0
YES
Error (1, 2)
Program to Protected
Block Error (1, 2)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI90276
Note: 1. Status check of b1 (Protected Block), b3 (V Invalid) and b4 (Program Error) can be made after each program operation or after
PP
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.
49/56
M36W216T, M36W216B
Figure 27. Program Suspend & Resume Flowchart and Pseudo Code
Start
program_suspend_command ( ) {
writeToFlash (any_address, 0xB0) ;
Write B0h
Write 70h
writeToFlash (any_address, 0x70) ;
/* read status register to check if
program has already completed */
do {
status_register=readFlash (any_address) ;
/* EF or GF must be toggled*/
Read Status
Register
NO
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
b2 = 1
YES
Program Complete
if (status_register.b2==0) /*program completed */
{ writeToFlash (any_address, 0xFF) ;
read_data ( ) ; /*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
Write FFh
}
Read data from
another address
else
{ writeToFlash (any_address, 0xFF) ;
read_data ( ); /*read data from another address*/
writeToFlash (any_address, 0xD0) ;
/*write 0xD0 to resume program*/
Write D0h
Write FFh
Read Data
}
}
Program Continues
AI90277
50/56
M36W216T, M36W216B
Figure 28. Erase Flowchart and Pseudo Code
Start
erase_command ( blockToErase ) {
writeToFlash (any_address, 0x20) ;
Write 20h
writeToFlash (blockToErase, 0xD0) ;
/* only A12-A20 are significannt */
/* Memory enters read status state after
the Erase Command */
Write Block
Address & D0h
do {
Read Status
Register
status_register=readFlash (any_address) ;
/* EF or GF must be toggled*/
NO
b7 = 1
} while (status_register.b7== 0) ;
YES
NO
YES
NO
NO
V
Invalid
if (status_register.b3==1) /*V
error_handler ( ) ;
invalid error */
PPF
Error (1)
PPF
b3 = 0
YES
if ( (status_register.b4==1) && (status_register.b5==1) )
/* command sequence error */
Command
Sequence Error (1)
b4, b5 = 1
NO
error_handler ( ) ;
if ( (status_register.b5==1) )
/* erase error */
b5 = 0
YES
Erase Error (1)
error_handler ( ) ;
Erase to Protected
Block Error (1)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI90278
Note: If an error is found, the Status Register must be cleared before further Program/Erase operations.
51/56
M36W216T, M36W216B
Figure 29. Erase Suspend & Resume Flowchart and Pseudo Code
Start
Write B0h
erase_suspend_command ( ) {
writeToFlash (any_address, 0xB0) ;
writeToFlash (any_address, 0x70) ;
/* read status register to check if
erase has already completed */
Write 70h
{
Read Status
Register
status_register=readFlash (any_address) ;
/* EF or GF must be toggled*/
NO
NO
b7 = 1
YES
} while (status_register.b7== 1) ;
if (status_register.b6==1) /*erase completed */
{ writeToFlash (any_address, 0xFF) ;
b6 = 1
YES
Erase Complete
read_data ( ) ; /*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
Write FFh
Read data from
another block
or
Program/Protection Program
or
Block Protect/Unprotect/Lock
}
else
{ read_program_data ( );
/*read or program data from another address*/
writeToFlash (any_address, 0xD0) ;
/*write 0xD0 to resume erase*/
Write D0h
Write FFh
Read Data
}
}
Erase Continues
AI90279
52/56
M36W216T, M36W216B
Figure 30. Locking Operations Flowchart and Pseudo Code
Start
locking_operation_command (address, lock_operation) {
writeToFlash (any_address, 0x60) ; /*configuration setup*/
Write 60h
if (lock_operation==PROTECT) /*to protect the block*/
writeToFlash (address, 0x01) ;
else if (lock_operation==UNPROTECT) /*to unprotect the block*/
writeToFlash (address, 0xD0) ;
Write
01h, D0h or 2Fh
else if (lock_operation==LOCK) /*to lock the block*/
writeToFlash (address, 0x2F) ;
writeToFlash (any_address, 0x90) ;
Write 90h
Read Status
Register
if (readFlash (address) ! = locking_state_expected)
error_handler () ;
NO
Locking
change
/*Check the locking state (see Read Block Signature table )*/
confirmed?
YES
writeToFlash (any_address, 0xFF) ; /*Reset to Read Array mode*/
Write FFh
}
End
AI90280
53/56
M36W216T, M36W216B
APPENDIX D. FLASH MEMORY COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER
STATE
Table 34. Write State Machine Current/Next, sheet 1 of 2
Command Input (and Next State)
Data
When
Read
Current
State
SR
bit 7
Read
Array
(FFh)
Program
Setup
(10/40h)
Erase
Setup
Erase
Confirm
(D0h)
Prog/Ers
Suspend
(B0h)
Prog/Ers
Resume
(D0h)
Read
Status
(70h)
Clear
Status
(50h)
(10/40h)
Read Array “1”
Array
Read Array Prog.Setup Ers. Setup
Read Array
Read Array
Read Sts. Read Array
Read
“1”
Program
Setup
Erase
Setup
Read
Status
Read Array
Read Array
Read Array
Read Array
Status
Status
Read
“1”
Electronic
Signature
Program
Setup
Erase
Setup
Read
Read Array
Read Array
Read Array
Status
Elect.Sg.
Read CFI
“1”
Program
Setup
Erase
Setup
Read
CFI
Read Array
Status
Query
Lock
(complete)
Lock Cmd
Error
Lock
(complete)
Lock Setup
“1”
“1”
“1”
“1”
“0”
“1”
Status
Status
Status
Status
Status
Lock Command Error
Lock Command Error
Lock Cmd
Error
Program
Setup
Erase
Setup
Read
Read Array
Read Array
Read Array
Read Array
Read Array
Status
Lock
(complete)
Program
Setup
Erase
Setup
Read
Read Array
Status
Prot. Prog.
Setup
Protection Register Program
Protection Register Program continue
Prot. Prog.
(continue)
Prot. Prog.
(complete)
Program
Setup
Erase
Setup
Read
Status
Status
Status
Read Array
Read Array
Program
Read Array
Status
Prog. Setup “1”
Program
“0”
Prog. Sus
Read Sts
Program (continue)
Program (continue)
(continue)
Prog. Sus
“1”
Prog. Sus
Read Array
Program Suspend to
Read Array
Program
Prog. Sus
Program
Prog. Sus Prog. Sus
Read Sts Read Array
Status
Array
Status
(continue) Read Array (continue)
Program Prog. Sus Program
(continue) Read Array (continue)
Prog. Sus
“1”
Prog. Sus
Read Array
Program Suspend to
Read Array
Prog. Sus Prog. Sus
Read Sts Read Array
Read Array
Prog. Sus
Read
Elect.Sg.
Electronic Prog. Sus
Signature Read Array
Program Suspend to
Read Array
Program
Prog. Sus
Program
Prog. Sus Prog. Sus
Read Sts Read Array
“1”
(continue) Read Array (continue)
Prog. Sus
Read CFI
Prog. Sus
CFI
Program Suspend to
Read Array
Program
Prog. Sus
Program
Prog. Sus Prog. Sus
Read Sts Read Array
“1”
“1”
“1”
“1”
“0”
“1”
“1”
Read Array
(continue) Read Array (continue)
Program
(complete)
Program
Setup
Erase
Setup
Read
Status
Status
Status
Status
Status
Array
Read Array
Read Array
Read Array
Status
Erase
Setup
Erase
(continue)
Erase
CmdError
Erase
(continue)
Erase Command Error
Erase Command Error
Erase
Cmd.Error
Program
Setup
Erase
Setup
Read
Read Array
Read Array
Read Array
Status
Erase
(continue)
Erase Sus
Read Sts
Erase (continue)
Erase (continue)
Erase Sus
Read Sts
Erase Sus
Read Array
Program
Setup
Erase Sus
Erase
Erase Sus
Erase
Erase Sus Erase Sus
Read Sts Read Array
Read Array (continue) Read Array (continue)
Erase Sus Erase Erase Sus Erase
Read Array (continue) Read Array (continue)
Erase Sus
Read Array
Erase Sus
Read Array
Program
Setup
Erase Sus Erase Sus
Read Sts Read Array
Erase Sus
Read
Elect.Sg.
Electronic Erase Sus
Signature Read Array
Program
Setup
Erase Sus
Erase
Erase Sus
Erase
Erase Sus Erase Sus
Read Sts Read Array
“1”
Read Array (continue) Read Array (continue)
Erase Sus
Read CFI
Erase Sus
CFI
Program
Setup
Erase Sus
Erase
Erase Sus
Erase
Erase Sus Erase Sus
Read Sts Read Array
“1”
“1”
Read Array
Read Array (continue) Read Array (continue)
Erase
(complete)
Program
Setup
Erase
Read
Status
Read Array
Read Array
Setup
Read Array
Status
Note: Cmd = Command, Elect.Sg. = Electronic Signature, Ers = Erase, Prog. = Program, Prot = Protection, Sus = Suspend.
54/56
M36W216T, M36W216B
Table 35. Write State Machine Current/Next, sheet 2 of 2
Command Input (and Next State)
Read CFI
Query
(98h)
Unlock
Confirm
(D0h)
Current State
Read Elect.Sg.
(90h)
Lock Setup
(60h)
Prot. Prog.
Setup (C0h)
Lock Confirm
(01h)
Lock Down
Confirm (2Fh)
Prot. Prog.
Setup
Read Array
Read Status
Read Elect.Sg. Read CFI Query
Read Elect.Sg. Read CFI Query
Lock Setup
Lock Setup
Lock Setup
Lock Setup
Read Array
Read Array
Read Array
Prot. Prog.
Setup
Prot. Prog.
Setup
Read Elect.Sg. Read Elect.Sg. Read CFI Query
Read CFI Query Read Elect.Sg. Read CFI Query
Prot. Prog.
Setup
Read Array
Lock (complete)
Read Array
Lock Setup
Lock Command Error
Prot. Prog.
Setup
Lock Cmd Error Read Elect.Sg. Read CFI Query
Lock Setup
Lock Setup
Prot. Prog.
Setup
Lock (complete) Read Elect.Sg. Read CFI Query
Read Array
Prot. Prog.
Setup
Protection Register Program
Prot. Prog.
(continue)
Protection Register Program (continue)
Prot. Prog.
Prot. Prog.
Lock Setup
Read Elect.Sg. Read CFI Query
(complete)
Read Array
Setup
Prog. Setup
Program
Program
(continue)
Program (continue)
Prog. Suspend Prog. Suspend Prog. Suspend
Program
(continue)
Program Suspend Read Array
Program Suspend Read Array
Program Suspend Read Array
Program Suspend Read Array
Read Status
Prog. Suspend Prog. Suspend Prog. Suspend
Read Array Read Elect.Sg. Read CFI Query
Read Elect.Sg. Read CFI Query
Program
(continue)
Prog. Suspend Prog. Suspend Prog. Suspend
Read Elect.Sg. Read Elect.Sg. Read CFI Query
Program
(continue)
Prog. Suspend Prog. Suspend Prog. Suspend
Program
(continue)
Read CFI
Read Elect.Sg. Read CFI Query
Program
(complete)
Prot. Prog.
Lock Setup
Read Elect.Sg. Read CFIQuery
Read Array
Read Array
Setup
Erase
(continue)
Erase Setup
Erase Command Error
Erase
Cmd.Error
Prot. Prog.
Lock Setup
Read Elect.Sg. Read CFI Query
Setup
Erase (continue)
Erase (continue)
Erase Suspend Erase Suspend Erase Suspend
Read Ststus Read Elect.Sg. Read CFI Query
Erase
(continue)
Lock Setup
Lock Setup
Lock Setup
Lock Setup
Lock Setup
Erase Suspend Read Array
Erase Suspend Read Array
Erase Suspend Erase Suspend Erase Suspend
Read Array Read Elect.Sg. Read CFI Query
Erase
(continue)
Erase Suspend Erase Suspend Erase Suspend
Read Elect.Sg. Read Elect.Sg. Read CFI Query
Erase
(continue)
Erase Suspend Read Array
Erase Suspend Read Array
Erase Suspend Erase Suspend Erase Suspend
Read CFI Query Read Elect.Sg. Read CFI Query
Erase
(continue)
Erase
Prot. Prog.
Setup
Read Elect.Sg. Read CFI Query
(complete)
Read Array
Note: Cmd = Command, Elect.Sg. = Electronic Signature, Prog. = Program, Prot = Protection.
55/56
M36W216T, M36W216B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
All other names are the property of their respective owners.
2001 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
www.st.com
56/56
相关型号:
M36W216TI
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
STMICROELECTR
M36W216TI-ZAT
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
STMICROELECTR
M36W216TI70ZA1T
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
STMICROELECTR
M36W216TI85ZA1T
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
STMICROELECTR
M36W216TIZA
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
STMICROELECTR
M36W416BG
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明