M50FW020K1 [NUMONYX]
Flash, 256KX8, 11ns, PQCC32, PLASTIC, LCC-32;
| 型号： | M50FW020K1 |
| 厂家： | 
NUMONYX B.V |
| 描述： | Flash, 256KX8, 11ns, PQCC32, PLASTIC, LCC-32 内存集成电路 |
| 文件： | 总33页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M50FW020
2 Mbit (256Kb x8, Uniform Block)
3V Supply Firmware Hub Flash Memory
PRODUCT PREVIEW
■ SUPPLY VOLTAGE
– V = 3V to 3.6V for Program, Erase and
CC
Read Operations
– V = 12V for Fast Program and Fast Erase
PP
(optional)
■ TWO INTERFACES
– Firmware Hub (FWH) Interface for embedded
operation with PC Chipsets
– Address/Address Multiplexed (A/A Mux) In-
terface for programming equipment compati-
bility
PLCC32 (K)
■ FIRMWARE HUB (FWH) HARDWARE
INTERFACE MODE
– 5 Signal Communication Interface supporting
Read and Write Operations
– Hardware Write Protect Pins for Block
Protection
Figure 1. Logic Diagram (FWH Interface)
– Register Based Read and Write Protection
V
V
– 5 Additional General Purpose Inputs for
platform design flexibility
CC PP
– Synchronized with 33MHz PCI clock
4
5
4
FWH0-
FWH3
– Multi-byte Read Operation (1-byte, 16-byte,
32-byte)
ID0-ID3
■ PROGRAMMING TIME
FGPI0-
FGPI4
WP
– 10µs typical
– Quadruple Byte Programming Option
■ 4 UNIFORM 64 Kbyte MEMORY BLOCKS
■ PROGRAM/ERASE CONTROLLER
FWH4
CLK
IC
TBL
M50FW020
– Embedded Byte Program and Block Erase
algorithms
RP
– Status Register Bits
INIT
■ PROGRAM and ERASE SUSPEND
■ FOR USE in PC BIOS APPLICATIONS
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
V
SS
AI05427
– Device Code: 28h
October 2001
1/33
This is preliminary information on a new product now in development. Details are subject to change without notice.
M50FW020
Figure 2. Logic Diagram (A/A Mux Interface)
DESCRIPTION
The M50FW020 is a 2 Mbit (256Kb x8) non-
volatile memory that can be read, erased and
reprogrammed. These operations can be
performed using a single low voltage (3.0 to 3.6V)
supply. For fast programming and fast erasing in
production lines an optional 12V power supply can
be used to reduce the programming and the
erasing times.
V
V
CC PP
11
8
DQ0-DQ7
A0-A10
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Blocks can be
protected individually to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are
written to the Command Interface of the memory.
An on-chip Program/Erase Controller simplifies
the process of programming or erasing the
memory by taking care of all of the special
operations that are required to update the memory
contents. The end of a program or erase operation
can be detected and any error conditions
identified. The command set required to control
the memory is consistent with JEDEC standards.
RC
IC
M50FW020
RB
G
W
RP
V
SS
Two different bus interfaces are supported by the
memory. The primary interface, the Firmware Hub
(or FWH) Interface, uses Intel’s proprietary FWH
protocol. This has been designed to remove the
AI05428
Figure 3. PLCC Connections
A/A Mux
A/A Mux
1 32
A7
A6
FGPI1
FGPI0
WP
IC (V )
IL
NC
IC (V
NC
)
IH
A5
NC
NC
A4
TBL
V
V
V
V
SS
CC
SS
CC
A3
ID3
9
M50FW020
25
A2
ID2
INIT
G
A1
ID1
FWH4
RFU
RFU
W
A0
ID0
RB
DQ7
DQ0
FWH0
17
A/A Mux
A/A Mux
AI05432
Note: Pins 27 and 28 are not internally connected.
2/33
M50FW020
need for the ISA bus in current PC Chipsets; the
M50FW020 acts as the PC BIOS on the Low Pin
Count bus for these PC Chipsets.
The secondary interface, the Address/Address
Multiplexed (or A/A Mux) Interface, is designed to
be compatible with current Flash Programmers for
production line programming prior to fitting to a PC
Motherboard.
Table 1. Signal Names (FWH Interface)
FWH0-FWH3
FWH4
ID0-ID3
FGPI0-FGPI4
IC
Input/Output Communications
Input Communication Frame
Identification Inputs
General Purpose Inputs
Interface Configuration
Interface Reset
The memory is offered in PLCC32 package and it
is supplied with all the bits erased (set to ’1’).
RP
INIT
CPU Reset
SIGNAL DESCRIPTIONS
CLK
Clock
There are two different bus interfaces available on
this part. The active interface is selected before
power-up or during Reset using the Interface Con-
figuration Pin, IC.
TBL
Top Block Lock
WP
Write Protect
The signals for each interface are discussed in the
Firmware Hub (FWH) Signal Descriptions section
and the Address/Address Multiplexed (A/A Mux)
Signal Descriptions section below. The supply sig-
nals are discussed in the Supply Signal Descrip-
tions section below.
Firmware Hub (FWH) Signal Descriptions
For the Firmware Hub (FWH) Interface see Figure
1, Logic Diagram, and Table 1, Signal Names.
Reserved for Future Use. Leave
RFU
disconnected or set at V or V
.
IL
IH
V
Supply Voltage
CC
Optional Supply Voltage for Fast
Erase Operations
V
PP
V
SS
Ground
NC
Not Connected Internally
Input/Output Communications (FWH0-FWH3). All
Input and Output Communication with the memory
take place on these pins. Addresses and Data for
Bus Read and Bus Write operations are encoded
on these pins.
Input Communication Frame (FWH4). The In-
put Communication Frame (FWH4) signals the
start of a bus operation. When Input Communica-
General Purpose Inputs (FGPI0-FGPI4). The Gen-
eral Purpose Inputs can be used as digital inputs
for the CPU to read. The General Purpose Input
Register holds the values on these pins. The pins
must have stable data from before the start of the
cycle that reads the General Purpose Input Regis-
ter until after the cycle is complete. These pins
must not be left to float, they should be driven Low,
tion Frame is Low, V , on the rising edge of the
IL
Clock a new bus operation is initiated. If Input
Communication Frame is Low, V , during a bus
IL
V
or High, V .
IL,
IH
operation then the operation is aborted. When In-
Interface Configuration (IC). The Interface Con-
figuration input selects whether the Firmware Hub
(FWH) or the Address/Address Multiplexed (A/A
Mux) Interface is used. The chosen interface must
be selected before power-up or during a Reset
and, thereafter, cannot be changed. The state of
the Interface Configuration, IC, should not be
changed during operation.
put Communication Frame is High, V , the cur-
IH
rent bus operation is proceeding or the bus is idle.
Identification Inputs (ID0-ID3). The
Identification Inputs select the address that the
memory responds to. Up to 16 memories can be
addressed on a bus. For an address bit to be ‘0’
the pin can be left floating or driven Low, V ; an
IL
internal pull-down resistor is included with a value
To select the Firmware Hub (FWH) Interface the
Interface Configuration pin should be left to float or
of R . For an address bit to be ‘1’ the pin must be
IL
driven High, V ; there will be a leakage current of
IH
driven Low, V ; to select the Address/Address
IL
I
through each pin when pulled to V ; see Table
LI2
IH
Multiplexed (A/A Mux) Interface the pin should be
19.
driven High, V . An internal pull-down resistor is
IH
By convention the boot memory must have
address ‘0000’ and all additional memories take
sequential addresses starting from ‘0001’.
included with a value of R ; there will be a leakage
IL
current of I through each pin when pulled to V ;
LI2
IH
see Table 19.
3/33
M50FW020
Table 2. Signal Names (A/A Mux Interface)
en to avoid unpredictable behavior by changing
TBL during Program or Erase Suspend.
IC
Interface Configuration
Address Inputs
Write Protect (WP). The Write Protect input is
used to prevent the Main Blocks (Blocks 0 to 2)
from being changed. When Write Protect, WP, is
A0-A10
DQ0-DQ7
Data Inputs/Outputs
Output Enable
set Low, V , Program and Erase operations in the
IL
Main Blocks have no effect, regardless of the state
of the Lock Register. When Write Protect, WP, is
G
set High, V , the protection of the Block is
IH
W
Write Enable
determined by the Lock Register. The state of
Write Protect, WP, does not affect the protection of
the Top Block (Block 3).
Write Protect, WP, must be set prior to a Program
or Erase operation is initiated and must not be
changed until the operation completes or unpre-
dictable results may occur. Care should be taken
to avoid unpredictable behavior by changing WP
during Program or Erase Suspend.
RC
RB
RP
Row/Column Address Select
Ready/Busy Output
Interface Reset
V
Supply Voltage
CC
Optional Supply Voltage for Fast
Program and Fast Erase
Operations
V
PP
Reserved for Future Use (RFU). These pins do
not have assigned functions in this revision of the
part. They may be left disconnected or driven Low,
V
Ground
SS
V , or High, V .
IL
IH
NC
Not Connected Internally
Address/Address Multiplexed (A/A Mux)
Signal Descriptions
For the Address/Address Multiplexed (A/A Mux)
Interface see Figure 2, Logic Diagram (A/A Mux
Interface), and Table 2, Signal Names (A/A Mux
Interface).
Address Inputs (A0-A10). The Address Inputs
are used to set the Row Address bits (A0-A10) and
the Column Address bits (A11-A17). They are
latched during any bus operation by the Row/Col-
umn Address Select input, RC.
Data Inputs/Outputs (DQ0-DQ7). The Data In-
puts/Outputs hold the data that is written to or read
from the memory. They output the data stored at
the selected address during a Bus Read opera-
tion. During Bus Write operations they represent
the commands sent to the Command Interface of
the internal state machine. The Data Inputs/Out-
puts, DQ0-DQ7, are latched during a Bus Write
operation.
Interface Reset (RP). The Interface Reset (RP)
input is used to reset the memory. When Interface
Reset (RP) is set Low, V , the memory is in Reset
IL
mode: the outputs are put to high impedance and
the current consumption is minimized. When RP is
set High, V , the memory is in normal operation.
IH
After exiting Reset mode, the memory enters
Read mode.
CPU Reset (INIT). The CPU Reset, INIT, pin is
used to Reset the memory when the CPU is reset.
It behaves identically to Interface Reset, RP, and
the internal Reset line is the logical OR (electrical
AND) of RP and INIT.
Clock (CLK). The Clock, CLK, input is used to
clock the signals in and out of the Input/Output
Communication Pins, FWH0-FWH3. The Clock
conforms to the PCI specification.
Top Block Lock (TBL). The Top Block Lock
input is used to prevent the Top Block (Block 3)
from being changed. When Top Block Lock, TBL,
Output Enable (G). The Output Enable, G, con-
trols the Bus Read operation of the memory.
is set Low, V , Program and Erase operations in
the Top Block have no effect, regardless of the
state of the Lock Register. When Top Block Lock,
IL
Write Enable (W). The Write Enable, W, controls
the Bus Write operation of the memory’s Com-
mand Interface.
Row/Column Address Select (RC). The Row/
Column Address Select input selects whether the
Address Inputs should be latched into the Row
Address bits (A0-A10) or the Column Address bits
(A11-A17). The Row Address bits are latched on
the falling edge of RC whereas the Column
Address bits are latched on the rising edge.
TBL, is set High, V , the protection of the Block is
IH
determined by the Lock Register. The state of Top
Block Lock, TBL, does not affect the protection of
the Main Blocks (Blocks 0 to 2).
Top Block Lock, TBL, must be set prior to a Pro-
gram or Erase operation is initiated and must not
be changed until the operation completes or un-
predictable results may occur. Care should be tak-
4/33
M50FW020
(1)
Table 3. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
°C
Ambient Operating Temperature (Temperature Range Option 1)
Ambient Operating Temperature (Temperature Range Option 5)
Temperature Under Bias
0 to 70
T
A
–20 to 85
–50 to 125
–65 to 150
°C
T
°C
BIAS
T
Storage Temperature
°C
STG
(2)
–0.6 to V + 0.6
Input or Output Voltage
V
V
CC
IO
V
Supply Voltage
–0.6 to 4
V
V
CC
PP
V
Program Voltage
–0.6 to 13
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum Voltage may undershoot to –2V and for less than 20ns during transitions. Maximum Voltage may overshoot to V + 2V
CC
and for less than 20ns during transitions.
Ready/Busy Output (RB). The Ready/Busy pin
gives the status of the memory’s Program/Erase
A 0.1µF capacitor should be connected between
the V Supply Voltage pins and the V Ground
CC
SS
Controller. When Ready/Busy is Low, V , the
pin to decouple the current surges from the power
supply. Both V Supply Voltage pins must be
connected to the power supply. The PCB track
widths must be sufficient to carry the currents
required during program and erase operations.
OL
memory is busy with a Program or Erase operation
and it will not accept any additional Program or
Erase command except the Program/Erase
Suspend command. When Ready/Busy is High,
CC
V
, the memory is ready for any Read, Program
OH
V
Optional Supply Voltage. The V Optional
PP
PP
or Erase operation.
Supply Signal Descriptions
The Supply Signals are the same for both interfac-
es.
V
supplies the power for all operations (Read, Pro-
gram, Erase etc.).
The Command Interface is disabled when the V
Supply Voltage is less than the Lockout Voltage,
V
accidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operation aborts and the
memory contents being altered will be invalid.
After V
is reset to Read mode.
Supply Voltage pin is used to select the Fast
Program (see the Quadruple Byte Program
Command description) and Fast Erase options of
the memory and to protect the memory. When V
< V
performed and an error is reported in the Status
Register if an attempt to change the memory
contents is made. When V = V
Erase operations take place as normal. When V
= V
PP
Program and Erase operations cannot be
PPLK
Supply Voltage. The V
Supply Voltage
CC
CC
Program and
PP
CC
CC
PP
Fast Program (if A/A Mux interface is
PPH
. This prevents Bus Write operations from
LKO
selected) and Fast Erase operations are used.
Any other voltage input to V will result in
undefined behavior and should not be used.
PP
V
should not be set to V for more than 80
PP
PPH
hours during the life of the memory.
V
age measurements.
Ground. V is the reference for all the volt-
SS
SS
becomes valid the Command Interface
CC
5/33
M50FW020
Table 4. Block Addresses
terface AC Signal Timing Characteristics and Fig-
ure 9, FWH Interface AC Signal Timing
Waveforms, for details on the timings of the sig-
nals.
Size
Block
Number
Address Range
(Kbytes)
Block Type
64
64
64
64
30000h-3FFFFh
20000h-2FFFFh
10000h-1FFFFh
00000h-0FFFFh
3
2
1
0
Top Block
Main Block
Main Block
Main Block
Bus Write. Bus Write operations write to the
Command Interface or Firmware Hub Registers. A
valid Bus Write operation starts when Input
Communication Frame, FWH4, is Low, V , as
IL
Clock rises and the correct Start cycle is on
FWH0-FWH3. On the following Clock cycles the
Host will send the Memory ID Select, Address,
other control bits, Data0-Data3 and Data4-Data7
on FWH0-FWH3. The memory outputs Sync data
until the wait-states have elapsed.
Refer to Table 6, FWH Bus Write Field Definitions,
and Figure 5, FWH Bus Write Waveforms, for a
description of the Field definitions for each clock
cycle of the transfer. See Table 21, FWH Interface
AC Signal Timing Characteristics and Figure 9,
FWH Interface AC Signal Timing Waveforms, for
details on the timings of the signals.
BUS OPERATIONS
The two interfaces have similar bus operations but
the signals and timings are completely different.
The Firmware Hub (FWH) Interface is the usual
interface and all of the functionality of the part is
available through this interface. Only a subset of
functions are available through the Address/
Address Multiplexed (A/A Mux) Interface.
Follow the section Firmware Hub (FWH) Bus
Operations below and the section Address/
Address Multiplexed (A/A Mux) Interface Bus
Operations below for a description of the bus
operations on each interface.
Bus Abort. The Bus Abort operation can be used
to immediately abort the current bus operation. A
Bus Abort occurs when FWH4 is driven Low, V ,
IL
Firmware Hub (FWH) Bus Operations
during the bus operation; the memory will tri-state
the Input/Output Communication pins, FWH0-
FWH3.
Note that, during a Bus Write operation, the
Command Interface starts executing the
command as soon as the data is fully received; a
Bus Abort during the final TAR cycles is not
guaranteed to abort the command; the bus,
however, will be released immediately.
The Firmware Hub (FWH) Interface consists of
four data signals (FWH0-FWH3), one control line
(FWH4) and a clock (CLK). In addition protection
against accidental or malicious data corruption
can be achieved using two further signals (TBL
and WP). Finally two reset signals (RP and INIT)
are available to put the memory into a known
state.
The data signals, control signal and clock are
designed to be compatible with PCI electrical
specifications. The interface operates with clock
speeds up to 33MHz.
Standby. When FWH4 is High, V , the memory
is put into Standby mode where FWH0-FWH3 are
put into a high-impedance state and the Supply
IH
Current is reduced to the Standby level, I
.
CC1
The following operations can be performed using
the appropriate bus cycles: Bus Read, Bus Write,
Standby, Reset and Block Protection.
Bus Read. Bus Read operations read from the
memory cells, specific registers in the Command
Interface or Firmware Hub Registers. A valid Bus
Read operation starts when Input Communication
Reset. During Reset mode all internal circuits are
switched off, the memory is deselected and the
outputs are put in high-impedance. The memory is
in Reset mode when Interface Reset, RP, or CPU
Reset, INIT, is Low, V . RP or INIT must be held
IL
Low, V , for t
. The memory resets to Read
IL
PLPH
mode upon return from Reset mode and the Lock
Registers return to their default states regardless
of their state before Reset, see Table 14. If RP or
Frame, FWH4, is Low, V , as Clock rises and the
IL
correct Start cycle is on FWH0-FWH3. On the
following clock cycles the Host will send the
Memory ID Select, Address and other control bits
on FWH0-FWH3. The memory responds by
outputting Sync data until the wait-states have
elapsed followed by Data0-Data3 and Data4-
Data7.
Refer to Table 5, FWH Bus Read Field Definitions,
and Figure 4, FWH Bus Read Waveforms (1-byte),
for a description of the Field definitions for each
clock cycle of the transfer. See Table 21, FWH In-
INIT goes Low, V , during a Program or Erase
IL
operation, the operation is aborted and the
memory cells affected no longer contain valid
data; the memory can take up to t
Program or Erase operation.
to abort a
PLRH
Block Protection. Block Protection can be
forced using the signals Top Block Lock, TBL, and
Write Protect, WP, regardless of the state of the
Lock Registers.
6/33
M50FW020
Table 5. FWH Bus Read Field Definitions
Clock
Clock Cycle
Count
FWH0-
FWH3
Memory
I/O
Cycle
Field
Description
Number
On the rising edge of CLK with FWH4 Low, the contents
of FWH0-FWH3 indicate the start of a FWH Read cycle.
1
2
1
1
7
1
START
1101b
XXXX
XXXX
0X0Xb
I
I
I
I
Indicates which FWH Flash Memory is selected. The
value on FWH0-FWH3 is compared to the IDSEL
strapping on the FWH Flash Memory pins to select
which FWH Flash Memory is being addressed.
IDSEL
ADDR
MSIZE
A 28-bit address phase is transferred starting with the
most significant nibble first.
3-9
10
Indicates how many bytes will be transferred during
multi-byte read operations. The FWH Flash Memory
supports 1-byte (0000b), 16-byte (0100b) and 32-byte
(0101b) transfers.
The host drives FWH0-FWH3 to 1111b to indicate a
turnaround cycle.
11
1
1
TAR
TAR
1111b
I
The FWH Flash Memory takes control of FWH0-FWH3
during this cycle.
12
1111b (float)
O
The FWH Flash Memory drives FWH0-FWH3 to 0101b
(short wait-sync) for two clock cycles, indicating that the
data is not yet available. Two wait-states are always
included.
13-14
2
WSYNC
0101b
O
The FWH Flash Memory drives FWH0-FWH3 to 0000b,
indicating that data will be available during the next
clock cycle.
15
1
2
RSYNC
DATA
0000b
XXXX
O
O
Data transfer is two CLK cycles, starting with the least
significant nibble.
16-17
2 WSYNC
For each subsequent byte of data repeat cycles 13-17
0 (1-byte)
75 (16-byte)
155 (32-byte)
+
1 RSYNC
+
n
17+
MULTI-
BYTE
(2WSYNC + 1RSYNC + 2DATA) 2 -1 times. The FWH
Flash Memory supports n = 0000b (1-byte), n = 0100b
(16-byte) and n = 0101b (32-byte) reads.
O
n
5(2 -1)
2 DATA
Previous
+1
The FWH Flash Memory drives FWH0-FWH3 to 1111b
to indicate a turnaround cycle.
1
1
TAR
TAR
1111b
O
Previous
+1
1111b
(float)
The FWH Flash Memory floats its outputs, the host
takes control of FWH0-FWH3.
N/A
Figure 4. FWH Bus Read Waveforms (1-byte)
CLK
FWH4
FWH0-FWH3
START
1
IDSEL
1
ADDR
7
MSIZE
1
TAR
2
SYNC
3
DATA
2
TAR
2
Number of
clock cycles
AI03437
7/33
M50FW020
Table 6. FWH Bus Write Field Definitions
Clock
Cycle
Number Count
Clock
Cycle
FWH0-
FWH3
Memory
I/O
Field
Description
On the rising edge of CLK with FWH4 Low, the contents of
FWH0-FWH3 indicate the start of a FWH Write Cycle.
1
2
1
1
START
1110b
XXXX
I
I
Indicates which FWH Flash Memory is selected. The value
on FWH0-FWH3 is compared to the IDSEL strapping on the
FWH Flash Memory pins to select which FWH Flash
Memory is being addressed.
IDSEL
A 28-bit address phase is transferred starting with the most
significant nibble first.
3-9
10
7
1
2
ADDR
MSIZE
DATA
XXXX
0000b
XXXX
I
I
I
Always 0000b (single byte transfer).
Data transfer is two cycles, starting with the least significant
nibble.
11-12
The host drives FWH0-FWH3 to 1111b to indicate a
turnaround cycle.
13
14
15
16
17
1
1
1
1
1
TAR
TAR
1111b
I
O
1111b
(float)
The FWH Flash Memory takes control of FWH0-FWH3
during this cycle.
The FWH Flash Memory drives FWH0-FWH3 to 0000b,
indicating it has received data or a command.
SYNC
TAR
0000b
1111b
O
The FWH Flash Memory drives FWH0-FWH3 to 1111b,
indicating a turnaround cycle.
O
1111b
(float)
The FWH Flash Memory floats its outputs and the host takes
control of FWH0-FWH3.
TAR
N/A
Figure 5. FWH Bus Write Waveforms
CLK
FWH4
FWH0-FWH3
START
1
IDSEL
1
ADDR
7
MSIZE
1
DATA
2
TAR
2
SYNC
1
TAR
2
Number of
clock cycles
AI03441
Address/Address Multiplexed (A/A Mux) Bus
Operations
The Address/Address Multiplexed (A/A Mux)
Interface is included for use by Flash
Programming equipment for faster factory
programming. Only a subset of the features
available to the Firmware Hub (FWH) Interface are
available; these include all the Commands but
exclude the Security features and other registers.
The Address/Address Multiplexed (A/A Mux)
Interface has a more traditional style interface.
The signals consist of a multiplexed address
signals (A0-A10), data signals, (DQ0-DQ7) and
three control signals (RC, G, W). An additional
signal, RP, can be used to reset the memory.
8/33
M50FW020
Table 7. A/A Mux Bus Operations
V
Operation
Bus Read
G
W
RP
DQ7-DQ0
Data Output
Data Input
Hi-Z
PP
V
V
IH
V
Don't Care
V or V
CC
IL
IH
IH
IH
V
V
V
V
V
Bus Write
Output Disable
Reset
IL
IH
PPH
V
Don't Care
Don't Care
IH
IH
V
or V
V
IL
or V
V
IL
Hi-Z
IL
IH
IH
Table 8. Manufacturer and Device Codes
Operation
Manufacturer Code
Device Code
G
W
RP
A17-A1
A0
DQ7-DQ0
20h
V
V
IH
V
V
V
IL
IL
IL
IH
IL
IL
V
V
IH
V
V
V
28h
IH
IH
The following operations can be performed using
the appropriate bus cycles: Bus Read, Bus Write,
Output Disable and Reset.
When the Address/Address Multiplexed (A/A Mux)
Interface is selected all the blocks are
unprotected. It is not possible to protect any blocks
through this interface.
Reset. During Reset mode all internal circuits are
switched off, the memory is deselected and the
outputs are put in high-impedance. The memory is
in Reset mode when RP is Low, V . RP must be
IL
held Low, V for t
. If RP is goes Low, V ,
IL
PLPH
IL
during
a Program or Erase operation, the
operation is aborted and the memory cells affected
no longer contain valid data; the memory can take
Bus Read. Bus Read operations are used to
output the contents of the Memory Array, the
Electronic Signature and the Status Register. A
valid Bus Read operation begins by latching the
Row Address and Column Address signals into
the memory using the Address Inputs, A0-A10,
and the Row/Column Address Select RC. Then
Write Enable (W) and Interface Reset (RP) must
up to t
to abort a Program or Erase operation.
PLRH
COMMAND INTERFACE
All Bus Write operations to the memory are
interpreted
by
the
Command
Interface.
Commands consist of one or more sequential Bus
Write operations.
After power-up or a Reset operation the memory
enters Read mode.
The commands are summarized in Table 10,
Commands. Refer to Table 10 in conjunction with
the text descriptions below.
be High, V , and Output Enable, G, Low, V , in
IH
IL
order to perform a Bus Read operation. The Data
Inputs/Outputs will output the value, see Figure
11, A/A Mux Interface Read AC Waveforms, and
Table 23, A/A Mux Interface Read AC
Characteristics, for details of when the output
becomes valid.
Bus Write. Bus Write operations write to the
Command Interface. A valid Bus Write operation
begins by latching the Row Address and Column
Address signals into the memory using the
Address Inputs, A0-A10, and the Row/Column
Address Select RC. The data should be set up on
the Data Inputs/Outputs; Output Enable, G, and
Read Memory Array Command. The Read Mem-
ory Array command returns the memory to its
Read mode where it behaves like a ROM or
EPROM. One Bus Write cycle is required to issue
the Read Memory Array command and return the
memory to Read mode. Once the command is is-
sued the memory remains in Read mode until an-
other command is issued. From Read mode Bus
Read operations will access the memory array.
While the Program/Erase Controller is executing a
Program or Erase operation the memory will not
accept the Read Memory Array command until the
operation completes.
Interface Reset, RP, must be High, V and Write
IH
Enable, W, must be Low, V . The Data Inputs/
IL
Outputs are latched on the rising edge of Write
Enable, W. See Figure 12, A/A Mux Interface
Write AC Waveforms, and Table 24, A/A Mux
Interface Write AC Characteristics, for details of
the timing requirements.
Read Status Register Command. The Read Sta-
tus Register command is used to read the Status
Register. One Bus Write cycle is required to issue
the Read Status Register command. Once the
Output Disable. The data outputs are high-im-
pedance when the Output Enable, G, is at V .
IH
9/33
M50FW020
command is issued subsequent Bus Read opera-
tions read the Status Register until another com-
mand is issued. See the section on the Status
Register for details on the definitions of the Status
Register bits.
Table 9. Read Electronic Signature
Code
Manufacturer Code
Device Code
Address
00000h
00001h
Data
20h
28h
Read Electronic Signature Command. The Read
Electronic Signature command is used to read the
Manufacturer Code and the Device Code. One
Bus Write cycle is required to issue the Read
Electronic Signature command. Once the
command is issued subsequent Bus Read
operations read the Manufacturer Code or the
Device Code until another command is issued.
After the Read Electronic Signature Command is
issued the Manufacturer Code and Device Code
can be read using Bus Read operations using the
addresses in Table 9.
Program Command. The Program command
can be used to program a value to one address in
the memory array at a time. Two Bus Write
operations are required to issue the command; the
second Bus Write cycle latches the address and
data in the internal state machine and starts the
Program/Erase Controller. Once the command is
issued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
If the address falls in a protected block then the
Program operation will abort, the data in the
memory array will not be changed and the Status
Register will output the error.
During the Program operation the memory will
only accept the Read Status Register command
and the Program/Erase Suspend command. All
other commands will be ignored. Typical Program
times are given in Table 11.
Note that the Program command cannot change a
bit set at ‘0’ back to ‘1’ and attempting to do so will
not cause any modification on its value. One of the
Erase commands must be used to set all of the
bits in the block to ‘1’.
See Figure 13, Program Flowchart and Pseudo
Code, for a suggested flowchart on using the
Program command.
Five Bus Write operations are required to issue the
command. The second, the third and the fourth
Bus Write cycle latches respectively the address
and data of the first, the second and the third byte
in the internal state machine. The fifth Bus Write
cycle latches the address and data of the fourth
byte in the internal state machine and starts the
Program/Erase Controller. Once the command is
issued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
During the Quadruple Byte Program operation the
memory will only accept the Read Status register
command and the Program/Erase Suspend com-
mand. All other commands will be ignored. Typical
Quadruple Byte Program times are given in Table
11.
Note that the Quadruple Byte Program command
cannot change a bit set to ‘0’ back to ‘1’ and
attempting to do so will not cause any modification
on its value. An Erase command must be used to
set all of the bits in the block to ‘1’.
See Figure 14, Quadruple Byte Program Flow-
chart and Pseudo Code (A/A Mux Interface Only),
for a suggested flowchart on using the Quadruple
Byte Program command.
Erase Command. The Erase command can be
used to erase a block. Two Bus Write operations
are required to issue the command; the second
Bus Write cycle latches the block address in the in-
ternal state machine and starts the Program/Erase
Controller. Once the command is issued subse-
quent Bus Read operations read the Status Reg-
ister. See the section on the Status Register for
details on the definitions of the Status Register
bits.
If the block is protected then the Erase operation
will abort, the data in the block will not be changed
and the Status Register will output the error.
Quadruple Byte Program Command. The Qua-
druple Byte Program Command can be only used
in A/A Mux mode to program four adjacent bytes
in the memory array at a time. The four bytes must
differ only for the addresses A0 and A1.
During the Erase operation the memory will only
accept the Read Status Register command and
the Program/Erase Suspend command. All other
commands will be ignored. Typical Erase times
are given in Table 11.
Programming should not be attempted when V
PP
is not at V
. The operation can also be executed
PPH
if V is below V
, but result could be uncertain.
PP
PPH
10/33
M50FW020
The Erase command sets all of the bits in the block
to ‘1’. All previous data in the block is lost.
During the polling period between issuing the
Program/Erase Suspend command and the
Program/Erase Controller pausing it is possible for
the operation to complete. Once Program/Erase
Controller Status bit indicates that the Program/
Erase Controller is no longer active, the Program
Suspend Status bit or the Erase Suspend Status
bit can be used to determine if the operation has
completed or is suspended. For timing on the
delay between issuing the Program/Erase
Suspend command and the Program/Erase
Controller pausing see Table 11.
See Figure 16, Erase Flowchart and Pseudo
Code, for a suggested flowchart on using the
Erase command.
Clear Status Register Command. The Clear Sta-
tus Register command can be used to reset bits 1,
3, 4 and 5 in the Status Register to ‘0’. One Bus
Write is required to issue the Clear Status Register
command. Once the command is issued the mem-
ory returns to its previous mode, subsequent Bus
Read operations continue to output the same data.
During Program/Erase Suspend the Read
Memory Array, Read Status Register, Read
Electronic Signature and Program/Erase Resume
commands will be accepted by the Command
Interface. Additionally, if the suspended operation
was Erase then the Program command will also be
accepted; only the blocks not being erased may be
read or programmed correctly.
See Figures 15, Program Suspend & Resume
Flowchart and Pseudo Code, and 17, Erase
Suspend & Resume Flowchart and Pseudo Code,
for suggested flowcharts on using the Program/
Erase Suspend command.
The bits in the Status Register are sticky and do
not automatically return to ‘0’ when a new Program
or Erase command is issued. If an error occurs
then it is essential to clear any error bits in the Sta-
tus Register by issuing the Clear Status Register
command before attempting a new Program or
Erase command.
Program/Erase Suspend Command. The
Pro-
gram/Erase Suspend command can be used to
pause a Program or Erase operation. One Bus
Write cycle is required to issue the Program/Erase
Suspend command and pause the Program/Erase
Controller. Once the command is issued it is nec-
essary to poll the Program/Erase Controller Status
bit to find out when the Program/Erase Controller
has paused; no other commands will be accepted
until the Program/Erase Controller has paused.
After the Program/Erase Controller has paused,
the memory will continue to output the Status Reg-
ister until another command is issued.
Program/Erase Resume Command. The
gram/Erase Resume command can be used to re-
start the Program/Erase Controller after
Pro-
a
Program/Erase Suspend has paused it. One Bus
Write cycle is required to issue the Program/Erase
Resume command. Once the command is issued
subsequent Bus Read operations read the Status
Register.
11/33
M50FW020
Table 10. Commands
Bus Write Operations
3rd
Command
1st
2nd
4th
5th
Addr Data Addr Data Addr Data Addr Data Addr Data
Read Memory Array
Read Status Register
1
1
1
1
2
2
5
2
1
1
1
1
1
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
FFh
70h
90h
98h
40h
10h
30h
20h
50h
B0h
D0h
00h
01h
60h
2Fh
C0h
Read Electronic Signature
Program
PA
PA
PD
PD
A
A
A
3
A
4
Quadruple Byte Program
Erase
PD
PD
PD
PD
1
2
BA
D0h
Clear Status Register
Program/Erase Suspend
Program/Erase Resume
Invalid/Reserved
Note: X Don’t Care, PA Program Address, PD Program Data, A
Consecutive Addresses, BA Any address in the Block.
1,2,3,4
Read Memory Array. After a Read Memory Array command, read the memory as normal until another command is issued.
Read Status Register. After a Read Status Register command, read the Status Register as normal until another command is issued.
Read Electronic Signature. After a Read Electronic Signature command, read Manufacturer Code, Device Code until another com-
mand is issued.
Erase, Program. After these commands read the Status Register until the command completes and another command is issued.
Quadruple Byte Program. This command is only valid in A/A Mux mode. Addresses A , A , A and A must be consecutive addresses
1
2
3
4
differing only for address bit A0 and A1. After this command read the Status Register until the command completes and another com-
mand is issued.
Clear Status Register. After the Clear Status Register command bits 1, 3, 4 and 5 in the Status Register are reset to ‘0’.
Program/Erase Suspend. After the Program/Erase Suspend command has been accepted, issue Read Memory Array, Read Status
Register, Program (during Erase suspend) and Program/Erase resume commands.
Program/Erase Resume. After the Program/Erase Resume command the suspended Program/Erase operation resumes, read the
Status Register until the Program/Erase Controller completes and the memory returns to Read Mode.
Invalid/Reserved. Do not use Invalid or Reserved commands.
STATUS REGISTER
The Status Register bits are summarized in Table
The Status Register provides information on the
current or previous Program or Erase operation.
Different bits in the Status Register convey
different information and errors on the operation.
To read the Status Register the Read Status
Register command can be issued. The Status
Register is automatically read after Program,
Erase and Program/Erase Resume commands
are issued. The Status Register can be read from
any address.
12, Status Register Bits. Refer to Table 12 in con-
junction with the text descriptions below.
Program/Erase Controller Status (Bit 7). The Pro-
gram/Erase Controller Status bit indicates whether
the Program/Erase Controller is active or inactive.
When the Program/Erase Controller Status bit is
‘0’, the Program/Erase Controller is active; when
the bit is ‘1’, the Program/Erase Controller is inac-
tive.
12/33
M50FW020
Table 11. Program and Erase Times
(T = 0 to 70°C or –20 to 85°C; V = 3.0 to 3.6V)
A
CC
(1)
Parameter
Interface
Test Condition
Min
Max
200
200
5
Unit
µs
Typ
10
10
Byte Program
V
V
= 12V ± 5%
= 12V ± 5%
= V
Quadruple Byte Program
A/A Mux
A/A Mux
µs
PP
(2)
sec
PP
0.1
Block Program
V
0.4
0.75
1
5
8
sec
sec
sec
µs
PP
CC
V
= 12V ± 5%
= V
PP
Block Erase
V
10
5
PP
CC
(3)
Program/Erase Suspend to Program pause
(3)
30
µs
Program/Erase Suspend to Block Erase pause
Note: 1. T = 25°C, V = 3.3V
A
CC
2. This time is obtained executing the Quadruple Byte Program Command.
3. Sampled only, not 100% tested.
The Program/Erase Controller Status is ‘0’ imme-
diately after a Program/Erase Suspend command
is issued until the Program/Erase Controller paus-
es. After the Program/Erase Controller pauses the
bit is ‘1’.
During Program and Erase operation the Pro-
gram/Erase Controller Status bit can be polled to
find the end of the operation. The other bits in the
Status Register should not be tested until the Pro-
gram/Erase Controller completes the operation
and the bit is ‘1’.
rectly. The Erase Status bit should be read once
the Program/Erase Controller Status bit is ‘1’ (Pro-
gram/Erase Controller inactive).
When the Erase Status bit is ‘0’ the memory has
successfully verified that the block has erased cor-
rectly; when the Erase Status bit is ‘1’ the Pro-
gram/Erase Controller has applied the maximum
number of pulses to the block and still failed to ver-
ify that the block has erased correctly.
Once the Erase Status bit is set to ‘1’ it can only be
reset to ‘0’ by a Clear Status Register command or
a hardware reset. If it is set to ‘1’ it should be reset
before a new Program or Erase command is is-
sued, otherwise the new command will appear to
fail.
After the Program/Erase Controller completes its
operation the Erase Status, Program Status, V
PP
Status and Block Protection Status bits should be
tested for errors.
Erase Suspend Status (Bit 6). The Erase Sus-
pend Status bit indicates that an Erase operation
has been suspended and is waiting to be re-
sumed. The Erase Suspend Status should only be
considered valid when the Program/Erase Con-
troller Status bit is ‘1’ (Program/Erase Controller
inactive); after a Program/Erase Suspend com-
mand is issued the memory may still complete the
operation rather than entering the Suspend mode.
When the Erase Suspend Status bit is ‘0’ the Pro-
gram/Erase Controller is active or has completed
its operation; when the bit is ‘1’ a Program/Erase
Suspend command has been issued and the
memory is waiting for a Program/Erase Resume
command.
When a Program/Erase Resume command is is-
sued the Erase Suspend Status bit returns to ‘0’.
Erase Status (Bit 5). The Erase Status bit can be
used to identify if the memory has applied the
maximum number of erase pulses to the block and
still failed to verify that the block has erased cor-
Program Status (Bit 4). The Program Status bit
can be used to identify if the memory has applied
the maximum number of program pulses to the
byte and still failed to verify that the byte has pro-
grammed correctly. The Program Status bit should
be read once the Program/Erase Controller Status
bit is ‘1’ (Program/Erase Controller inactive).
When the Program Status bit is ‘0’ the memory has
successfully verified that the byte has pro-
grammed correctly; when the Program Status bit is
‘1’ the Program/Erase Controller has applied the
maximum number of pulses to the byte and still
failed to verify that the byte has programmed cor-
rectly.
Once the Program Status bit is set to ‘1’ it can only
be reset to ‘0’ by a Clear Status Register com-
mand or a hardware reset. If it is set to ‘1’ it should
be reset before a new Program or Erase command
is issued, otherwise the new command will appear
to fail.
13/33
M50FW020
Table 12. Status Register Bits
Operation
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1
(1)
Program active
‘0’
‘1
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘1’
‘0’
‘0’
‘1’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘1’
X
X
X
X
X
X
(1)
(1)
(1)
(1)
(1)
Program suspended
Program completed successfully
‘1’
‘1’
‘1’
Program failure due to V Error
PP
Program failure due to Block Protection (FWH Interface only)
Program failure due to cell failure
Erase active
‘1’
‘0’
‘1’
‘1’
‘1’
‘0’
‘0’
‘0’
‘0’
‘0’
‘1’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘1’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
Block Erase suspended
Erase completed successfully
‘1’
‘0’
‘0’
Erase failure due to V Error
PP
Block Erase failure due to Block Protection (FWH Interface
only)
‘1’
‘1’
‘0’
‘0’
‘0’
‘1’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
‘1’
‘0’
Erase failure due to failed cell(s)
Note: 1. For Program operations during Erase Suspend Bit 6 is ‘1’, otherwise Bit 6 is ‘0’.
V
Status (Bit 3). The V
Status bit can be
PP
When the Program Suspend Status bit is ‘0’ the
Program/Erase Controller is active or has complet-
ed its operation; when the bit is ‘1’ a Program/
Erase Suspend command has been issued and
the memory is waiting for a Program/Erase Re-
sume command.
PP
used to identify an invalid voltage on the V pin
during Program and Erase operations. The V
pin is only sampled at the beginning of a Program
or Erase operation. Indeterminate results can oc-
cur if V
PP
PP
becomes invalid during a Program or
PP
Erase operation.
When a Program/Erase Resume command is is-
sued the Program Suspend Status bit returns to
‘0’.
When the V Status bit is ‘0’ the voltage on the
PP
V
V
pin was sampled at a valid voltage; when the
Status bit is ‘1’ the V pin has a voltage that
PP
PP
PP
Block Protection Status (Bit 1). The Block Pro-
tection Status bit can be used to identify if the Pro-
gram or Erase operation has tried to modify the
contents of a protected block. When the Block Pro-
tection Status bit is to ‘0’ no Program or Erase op-
erations have been attempted to protected blocks
since the last Clear Status Register command or
hardware reset; when the Block Protection Status
bit is ‘1’ a Program or Erase operation has been at-
tempted on a protected block.
is below the V
Lockout Voltage, V
, the
PPLK
PP
memory is protected; Program and Erase opera-
tion cannot be performed.
Once the V Status bit set to ‘1’ it can only be re-
PP
set to ‘0’ by a Clear Status Register command or a
hardware reset. If it is set to ‘1’ it should be reset
before a new Program or Erase command is is-
sued, otherwise the new command will appear to
fail.
Program Suspend Status (Bit 2). The Program
Suspend Status bit indicates that a Program oper-
ation has been suspended and is waiting to be re-
sumed. The Program Suspend Status should only
be considered valid when the Program/Erase
Controller Status bit is ‘1’ (Program/Erase Control-
ler inactive); after a Program/Erase Suspend com-
mand is issued the memory may still complete the
operation rather than entering the Suspend mode.
Once it is set to ‘1’ the Block Protection Status bit
can only be reset to ‘0’ by a Clear Status Register
command or a hardware reset. If it is set to ‘1’ it
should be reset before a new Program or Erase
command is issued, otherwise the new command
will appear to fail.
Using the A/A Mux Interface the Block Protection
Status bit is always ‘0’.
Reserved (Bit 0). Bit 0 of the Status Register is
reserved. Its value should be masked.
14/33
M50FW020
FIRMWARE HUB (FWH) INTERFACE
CONFIGURATION REGISTERS
After power-up or reset the Write Lock Bit is al-
ways set to ‘1’ (write protected).
When the Firmware Hub Interface is selected sev-
eral additional registers can be accessed. These
registers control the protection status of the
Blocks, read the General Purpose Input pins and
identify the manufacturer code for the memory.
See Table 13 for the memory map of the Configu-
ration Registers.
Read Lock. The Read Lock bit determines
whether the contents of the Block can be read
(from Read mode). When the Read Lock Bit is set,
‘1’, the block is read protected; any operation that
attempts to read the contents of the block will read
00h instead. When the Read Lock Bit is reset, ‘0’,
read operations in the Block return the data pro-
grammed into the block as expected.
Lock Registers
After power-up or reset the Read Lock Bit is al-
ways reset to ‘0’ (not read protected).
The Lock Registers control the protection status of
the Blocks. Each Block has its own Lock Register.
Three bits within each Lock Register control the
protection of each block, the Write Lock Bit, the
Read Lock Bit and the Lock Down Bit.
The Lock Registers can be read and written,
though care should be taken when writing as, once
the Lock Down Bit is set, ‘1’, further modifications
to the Lock Register cannot be made until cleared,
to ‘0’, by a reset or power-up.
Lock Down. The Lock Down Bit provides a
mechanism for protecting software data from sim-
ple hacking and malicious attack. When the Lock
Down Bit is set, ‘1’, further modification to the
Write Lock, Read Lock and Lock Down Bits cannot
be performed. A reset or power-up is required be-
fore changes to these bits can be made. When the
Lock Down Bit is reset, ‘0’, the Write Lock, Read
Lock and Lock Down Bits can be changed.
See Table 14 for details on the bit definitions of the
Lock Registers.
Firmware Hub (FWH) General Purpose Input
Register
Write Lock. The Write Lock Bit determines
whether the contents of the Block can be modified
(using the Program or Erase Command). When
the Write Lock Bit is set, ‘1’, the block is write pro-
tected; any operations that attempt to change the
data in the block will fail and the Status Register
will report the error. When the Write Lock Bit is re-
set, ‘0’, the block is not write protected through the
Lock Register and may be modified unless write
protected through some other means.
The Firmware Hub (FWH) General Purpose Input
Register holds the state of the Firmware Hub Inter-
face General Purpose Input pins, FGPI0-FGPI4.
When this register is read, the state of these pins
is returned. This register is read-only and writing to
it has no effect.
The signals on the Firmware Hub Interface Gener-
al Purpose Input pins should remain constant
throughout the whole Bus Read cycle in order to
guarantee that the correct data is read.
When V
is less than V
all blocks are pro-
PP
PPLK
tected and cannot be modified, regardless of the
state of the Write Lock Bit. If Top Block Lock, TBL,
Manufacturer Code Register
Reading the Manufacturer Code Register returns
the manufacturer code for the memory. The man-
ufacturer code for STMicroelectronics is 20h. This
register is read-only and writing to it has no effect.
is Low, V , then the Top Block (Block 3) is write
IL
protected and cannot be modified. Similarly, if
Write Protect, WP, is Low, V , then the Main
IL
Blocks (Blocks 0 to 2) are write protected and can-
not be modified.
15/33
M50FW020
Table 13. Firmware Hub Register Configuration Map
Default
Value
Memory
Address
Mnemonic
Register Name
Access
T_BLOCK_LK
Top Block Lock Register (Block 3)
FBF0002h
FBE0002h
FBD0002h
FBC0002h
FBC0100h
FBC0000h
01h
01h
01h
01h
N/A
20h
R/W
R/W
R/W
R/W
R
T_MINUS01_LK Top Block [-1] Lock Register (Block 2)
T_MINUS02_LK Top Block [-2] Lock Register (Block 1)
T_MINUS03_LK Top Block [-3] Lock Register (Block 0)
FGPI_REG
Firmware Hub (FWH) General Purpose Input Register
MANUF_REG
Manufacturer Code Register
R
(1)
Table 14. Lock Register Bit Definitions
Bit
Bit Name
Value
Function
7-3
Reserved
Bus Read operations in this Block always return 00h.
‘1’
‘0’
2
1
Read-Lock
Bus read operations in this Block return the Memory Array contents. (Default
value).
Changes to the Read-Lock bit and the Write-Lock bit cannot be performed. Once a
‘1’ is written to the Lock-Down bit it cannot be cleared to ‘0’; the bit is always reset
to ‘0’ following a Reset (using RP or INIT) or after power-up.
‘1’
Lock-Down
Write-Lock
Read-Lock and Write-Lock can be changed by writing new values to them. (Default
value).
‘0’
‘1’
‘0’
Program and Erase operations in this Block will set an error in the Status Register.
The memory contents will not be changed. (Default value).
0
Program and Erase operations in this Block are executed and will modify the Block
contents.
Note: 1. Applies to Top Block Lock Register (T_BLOCK_LK) and Top Block [-1] Lock Register (T_MINUS01_LK) to Top Block [-3] Lock
Register (T_MINUS03_LK).
(1)
Table 15. General Purpose Input Register Definition
Bit
Bit Name
Value
Function
7-5
Reserved
Input Pin FGPI4 is at V
Input Pin FGPI4 is at V
Input Pin FGPI3 is at V
Input Pin FGPI3 is at V
Input Pin FGPI2 is at V
Input Pin FGPI2 is at V
Input Pin FGPI1 is at V
Input Pin FGPI1 is at V
Input Pin FGPI0 is at V
Input Pin FGPI0 is at V
‘1’
‘0’
‘1’
‘0’
‘1’
‘0’
‘1’
‘0’
‘1’
‘0’
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
4
3
2
1
0
FGPI4
FGPI3
FGPI2
FGPI1
FGPI0
Note: 1. Applies to the General Purpose Input Register (FGPI_REG).
16/33
M50FW020
Table 16. FWH Interface AC Measurement Conditions
Parameter
Value
3.0 to 3.6
10
Unit
V
V
CC
Supply Voltage
Load Capacitance (C )
pF
ns
V
L
Input Rise and Fall Times
≤ 1.4
0.2 V and 0.6 V
Input Pulse Voltages
CC
CC
0.4 V
Input and Output Timing Ref. Voltages
V
CC
Figure 6. FWH Interface AC Testing Input Output Waveforms
0.6 V
CC
0.4 V
CC
0.2 V
CC
Input and Output AC Testing Waveform
I
< I
I
> I
I
< I
O LO
O
LO
O
LO
Output AC Tri-state Testing Waveform
AI03404
17/33
M50FW020
Table 17. A/A Mux Interface AC Measurement Conditions
Parameter
Value
3.0 to 3.6
30
Unit
V
V
CC
Supply Voltage
Load Capacitance (C )
pF
ns
V
L
Input Rise and Fall Times
≤ 10
Input Pulse Voltages
0 to 3
1.5
Input and Output Timing Ref. Voltages
V
Figure 7. A/A Mux Interface AC Testing Input Output Waveform
3V
0V
1.5V
AI01417
Table 18. Impedance
(T = 25 °C, f = 1 MHz)
A
Symbol
Parameter
Test Condition
Min
Max
Unit
(1)
V
= 0V
= 0V
Input Capacitance
Clock Capacitance
13
12
pF
C
IN
IN
IN
(1)
CLK
V
3
pF
nH
C
L
Recommended Pin
Inductance
(2)
PIN
20
Note: 1. Sampled only, not 100% tested.
2. See PCI Specification.
18/33
M50FW020
Table 19. DC Characteristics
(T = 0 to 70°C or –20 to 85°C; V = 3.0 to 3.6V)
A
CC
Symbol
Parameter
Interface
FWH
Test Condition
Min
Max
Unit
V
0.5 V
V
V
+ 0.5
CC
CC
CC
V
IH
Input High Voltage
0.7 V
+ 0.3
A/A Mux
FWH
V
CC
0.3 V
–0.5
-0.5
1.35
–0.5
V
CC
V
IL
Input Low Voltage
A/A Mux
FWH
0.8
+ 0.5
V
V
(INIT)
V
CC
INIT Input High Voltage
INIT Input Low Voltage
V
IH
V (INIT)
IL
0.2 V
CC
FWH
V
(2)
0V ≤ V ≤ V
CC
Input Leakage Current
±10
200
µA
µA
I
IN
LI
IC, IDx Input Leakage
Current
I
IC, ID0, ID1, ID2, ID3 = V
CC
LI2
IC, IDx Input Pull Low
Resistor
R
20
100
kΩ
IL
0.9 V
FWH
A/A Mux
FWH
V
V
I
I
= –500µA
= –100µA
= 1.5mA
= 1.8mA
CC
OH
OH
V
Output High Voltage
OH
V
– 0.4
CC
I
OL
0.1 V
V
CC
V
I
Output Low Voltage
OL
I
A/A Mux
0.45
±10
3.6
V
OL
0V ≤ V
≤ V
CC
Output Leakage Current
µA
V
LO
OUT
V
V
V
V
Voltage
3
PP1
PP
Voltage (Fast
PP
11.4
12.6
V
PPH
Program/Fast Erase)
(1)
PPLK
V
V
Lockout Voltage
Lockout Voltage
1.5
1.8
V
V
V
PP
CC
(1)
2.3
V
LKO
FWH4 = 0.9 V , V = V
CC
CC
PP
I
All other inputs 0.9 V to 0.1 V
CC
Supply Current (Standby)
Supply Current (Standby)
FWH
FWH
FWH
100
µA
mA
mA
CC1
CC
V
CC
= 3.6V, f(CLK) = 33MHz
FWH4 = 0.1 V , V = V
CC
CC
PP
I
All other inputs 0.9 V to 0.1 V
CC
10
60
CC2
CC
V
CC
= 3.6V, f(CLK) = 33MHz
V
CC
= V max, V = V
Supply Current
(Any internal operation
active)
CC
PP
CC
f(CLK) = 33MHz
= 0mA
I
I
CC3
CC4
I
OUT
G = V , f = 6MHz
Supply Current (Read)
A/A Mux
A/A Mux
20
20
mA
mA
IH
Supply Current
(Program/Erase)
(1)
Program/Erase Controller Active
I
I
CC5
V
Supply Current
PP
I
V
V
> V
400
µA
PP
PP
CC
(Read/Standby)
= V
40
15
mA
mA
PP
CC
V
Supply Current
PP
(1)
PP1
(Program/Erase active)
V
= 12V ± 5%
PP
Note: 1. Sampled only, not 100% tested.
2. Input leakage currents include High-Z output leakage for all bi-directional buffers with tri-state outputs.
19/33
M50FW020
Table 20. FWH Interface Clock Characteristics
(T = 0 to 70°C or –20 to 85°C; V = 3.0 to 3.6V)
A
CC
Symbol
Parameter
Test Condition
Value
Unit
(1)
t
Min
30
ns
CYC
CLK Cycle Time
t
CLK High Time
CLK Low Time
Min
Min
Min
Max
11
11
1
ns
ns
HIGH
t
LOW
V/ns
V/ns
CLK Slew Rate
peak to peak
4
Note: 1. Devices on the PCI Bus must work with any clock frequency between DC and 33MHz. Below 16MHz devices may be guaranteed
by design rather than tested. Refer to PCI Specification.
Figure 8. FWH Interface Clock Waveform
tCYC
tHIGH
tLOW
0.6 V
0.5 V
0.4 V
0.3 V
0.2 V
CC
CC
CC
CC
CC
0.4 V
,
CC p-to-p
(minimum)
AI03403
20/33
M50FW020
Table 21. FWH Interface AC Signal Timing Characteristics
(T = 0 to 70°C or –20 to 85°C; V = 3.0 to 3.6V)
A
CC
PCI
Symbol
Symbol
Parameter
Test Condition
Value
Unit
Min
2
ns
ns
t
t
val
CLK to Data Out
CHQV
Max
11
CLK to Active
(Float to Active Delay)
(1)
t
Min
Max
Min
2
28
7
ns
ns
ns
t
on
CHQX
CLK to Inactive
(Active to Float Delay)
t
t
CHQZ
off
t
t
AVCH
(2)
t
su
Input Set-up Time
DVCH
t
CHAX
(2)
t
h
Min
0
ns
Input Hold Time
t
CHDX
Note: 1. The timing measurements for Active/Float transitions are defined when the current through the pin equals the leakage current spec-
ification.
2. Applies to all inputs except CLK.
Figure 9. FWH Interface AC Signal Timing Waveforms
CLK
tCHQV
tCHQZ
tCHQX
tDVCH
tCHDX
VALID
FWH0-FWH3
VALID OUTPUT DATA
FLOAT OUTPUT DATA
VALID INPUT DATA
AI03405
21/33
M50FW020
Table 22. Reset AC Characteristics
(T = 0 to 70°C or –20 to 85°C; V = 3.0 to 3.6V)
A
CC
Symbol
Parameter
Test Condition
Value
100
100
30
Unit
ns
t
RP or INIT Reset Pulse Width
Min
Max
Max
Min
PLPH
Program/Erase Inactive
Program/Erase Active
Rising edge only
ns
t
RP or INIT Low to Reset
PLRH
µs
(1)
50
mV/ns
RP or INIT Slew Rate
t
RP or INIT High to FWH4 Low
FWH Interface only
Min
Min
30
50
µs
µs
PHFL
t
RP High to Write Enable or Output
Enable Low
PHWL
A/A Mux Interface only
t
PHGL
Note: 1. See Chapter 4 of the PCI Specification.
Figure 10. Reset AC Waveforms
RP, INIT
tPHWL, tPHGL, tPHFL
tPLPH
W, G, FWH4
RB
tPLRH
AI03420
22/33
M50FW020
Table 23. A/A Mux Interface Read AC Characteristics
(T = 0 to 70°C or –20 to 85°C; V = 3.0 to 3.6V)
A
CC
Symbol
Parameter
Test Condition
Value
250
50
Unit
ns
t
t
Read Cycle Time
Min
Min
Min
Min
Min
Max
AVAV
Row Address Valid to RC Low
RC Low to Row Address Transition
Column Address Valid to RC high
RC High to Column Address Transition
RC High to Output Valid
ns
AVCL
CLAX
t
t
50
ns
50
ns
AVCH
CHAX
t
50
ns
(1)
150
ns
t
CHQV
(1)
Output Enable Low to Output Valid
RP High to Row Address Valid
Max
Min
Min
Max
Min
50
1
ns
µs
ns
ns
ns
t
GLQV
t
PHAV
GLQX
t
t
Output Enable Low to Output Transition
Output Enable High to Output Hi-Z
Output Hold from Output Enable High
0
50
0
GHQZ
GHQX
t
Note: 1. G may be delayed up to t
– t
after the rising edge of RC without impact on t
.
CHQV
CHQV
GLQV
Figure 11. A/A Mux Interface Read AC Waveforms
tAVAV
A0-A10
ROW ADDR VALID COLUMN ADDR VALID
NEXT ADDR VALID
tAVCL
tAVCH
tCLAX
tCHAX
RC
G
tCHQV
tGLQV
tGLQX
tGHQZ
tGHQX
VALID
DQ0-DQ7
W
tPHAV
RP
AI03406
23/33
M50FW020
Table 24. A/A Mux Interface Write AC Characteristics
(T = 0 to 70°C or –20 to 85°C; V = 3.0 to 3.6V)
A
CC
Symbol
Parameter
Test Condition
Value
100
50
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
t
t
Write Enable Low to Write Enable High
Data Valid to Write Enable High
Min
Min
Min
Min
Min
Min
Min
Min
Min
WLWH
DVWH
WHDX
Write Enable High to Data Transition
Row Address Valid to RC Low
5
t
t
50
AVCL
RC Low to Row Address Transition
Column Address Valid to RC High
RC High to Column Address Transition
Write Enable High to Write Enable Low
RC High to Write Enable High
50
CLAX
AVCH
t
t
50
50
CHAX
WHWL
CHWH
t
t
100
50
(1)
V
High to Write Enable High
Min
Min
Min
Min
100
30
0
ns
ns
ns
ns
t
PP
VPHWH
t
Write Enable High to Output Enable Low
Write Enable High to RB Low
WHGL
t
WHRL
(1,2)
QVVPL
Output Valid, RB High to V Low
0
t
PP
Note: 1. Sampled only, not 100% tested.
2. Applicable if V is seen as a logic input (V < 3.6V).
PP
PP
24/33
M50FW020
Figure 12. A/A Mux Interface Write AC Waveforms
Write erase or
program setup
Write erase confirm or Automated erase
valid address and data or program delay
Read Status
Register Data
Ready to write
another command
A0-A10
RC
R1
C1
R2
C2
tCLAX
tAVCH
tAVCL
tCHAX
tWHWL
tWLWH
tCHWH
W
G
tVPHWH
tWHGL
tWHRL
RB
tQVVPL
V
PP
tDVWH
tWHDX
DQ0-DQ7
D
D
VALID SRD
IN1
IN2
AI04194
25/33
M50FW020
Figure 13. Program Flowchart and Pseudo Code
Start
Program command:
– write 40h or 10h
Write 40h or 10h
– write Address & Data
(memory enters read status state after
the Program command)
Write Address
& Data
do:
NO
Read Status
–read Status Register if Program/Erase
Suspend command given execute
suspend program loop
Register
Suspend
YES
NO
Suspend
Loop
b7 = 1
YES
while b7 = 1
NO
NO
NO
V
Invalid
If b3 = 1, V
invalid error:
PP
PP
– error handler
b3 = 0
YES
Error (1, 2)
Program
If b4 = 1, Program error:
– error handler
b4 = 0
YES
Error (1, 2)
FWH
Interface
Only
Program to Protected
Block Error (1, 2)
If b1 = 1, Program to protected block error:
– error handler
b1 = 0
YES
End
AI03407
Note: 1. A Status check of b1 (Protected Block), b3 (V invalid) and b4 (Program Error) can be made after each Program operation by
PP
following the correct command sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
26/33
M50FW020
Figure 14. Quadruple Byte Program Flowchart and Pseudo Code (A/A Mux Interface Only)
Start
Write 30h
Write Address 1
& Data 1 (3)
Quadruple Byte Program command:
– write 30h
– write Address 1 & Data 1 (3)
– write Address 2 & Data 2 (3)
– write Address 3 & Data 3 (3)
– write Address 4 & Data 4 (3)
(memory enters read status state after
the Quadruple Byte Program command)
Write Address 2
& Data 2 (3)
Write Address 3
& Data 3 (3)
Write Address 4
& Data 4 (3)
do:
NO
– read Status Register if Program/Erase
Suspend command given execute
suspend program loop
Read Status
Register
Suspend
YES
NO
NO
NO
Suspend
Loop
b7 = 1
YES
while b7 = 1
V
Invalid
Error (1, 2)
If b3 = 1, V
invalid error:
PP
PP
– error handler
b3 = 0
YES
Program
Error (1, 2)
If b4 = 1, Program error:
– error handler
b4 = 0
YES
End
AI03982
Note: 1. A Status check of b3 (V invalid) and b4 (Program Error) can be made after each Program operation by following the correct com-
PP
mand sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
3. Address 1, Address 2, Address 3 and Address 4 must be consecutive addresses differing only for address bits A0 and A1.
27/33
M50FW020
Figure 15. Program Suspend & Resume Flowchart and Pseudo Code
Start
Write B0h
Program/Erase Suspend command:
– write B0h
– write 70h
Write 70h
do:
– read Status Register
Read Status
Register
NO
NO
b7 = 1
YES
while b7 = 1
b2 = 1
YES
Program Complete
If b2 = 0 Program completed
Write a read
Command
Read data from
another address
Program/Erase Resume command:
– write D0h to resume the program
– if the Program operation completed
then this is not necessary.
The device returns to Read as
normal (as if the Program/Erase
suspend was not issued).
Write D0h
Write FFh
Read Data
Program Continues
AI03408
28/33
M50FW020
Figure 16. Erase Flowchart and Pseudo Code
Start
Erase command:
– write 20h
Write 20h
– write Block Address & D0h
(memory enters read Status Register after
the Erase command)
Write Block Address
& D0h
do:
– read Status Register
– if Program/Erase Suspend command
given execute suspend erase loop
NO
Read Status
Register
Suspend
YES
NO
Suspend
Loop
b7 = 1
while b7 = 1
YES
NO
NO
NO
NO
V
Invalid
If b3 = 1, V
invalid error:
PP
Error (1)
PP
– error handler
b3 = 0
YES
Command
Sequence Error (1)
If b4, b5 = 1, Command sequence error:
– error handler
b4, b5 = 0
YES
If b5 = 1, Erase error:
– error handler
b5 = 0
YES
Erase Error (1)
FWH
Interface
Only
Erase to Protected
Block Error (1)
If b1 = 1, Erase to protected block error:
– error handler
b1 = 0
YES
End
AI05433
Note: 1. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
29/33
M50FW020
Figure 17. Erase Suspend & Resume Flowchart and Pseudo Code
Start
Write B0h
Program/Erase Suspend command:
– write B0h
– write 70h
Write 70h
do:
Read Status
Register
– read Status Register
NO
NO
b7 = 1
YES
while b7 = 1
b6 = 1
YES
Erase Complete
If b6 = 0, Erase completed
Read data from
another block
or
Program
Program/Erase Resume command:
– write D0h to resume erase
– if the Erase operation completed
then this is not necessary.
The device returns to Read as
normal (as if the Program/Erase
suspend was not issued).
Write D0h
Write FFh
Read Data
Erase Continues
AI03410
30/33
M50FW020
Table 25. Ordering Information Scheme
Example:
M50FW020
K
1
T
Device Type
M50
Architecture
F = Firmware Hub Interface
Operating Voltage
W = 3.0 to 3.6V
Device Function
020 = 2 Mbit (256Kb x8), Uniform Block
Package
K = PLCC32
Temperature Range
1 = 0 to 70 °C
5 = –20 to 85°C
Option
T = Tape & Reel Packing
For a list of available options or for further information on any aspect of this device, please contact the ST
Sales Office nearest to you.
Table 26. Revision History
Date
Version
Revision Details
October 2001
-01
First Issue
31/33
M50FW020
Table 27. PLCC32 - 32 lead Plastic Leaded Chip Carrier, Package Mechanical Data
millimeters
inches
Symbol
Typ
Min
Max
3.560
2.410
–
Typ
Min
Max
0.1402
0.0949
–
A
A1
A2
B
2.540
1.520
0.380
0.330
0.660
12.320
11.350
9.910
14.860
13.890
12.450
–
0.1000
0.0598
0.0150
0.0130
0.0260
0.4850
0.4469
0.3902
0.5850
0.5469
0.4902
–
0.530
0.810
12.570
11.560
10.920
15.110
14.100
13.460
–
0.0209
0.0319
0.4949
0.4551
0.4299
0.5949
0.5551
0.5299
–
B1
D
D1
D2
E
E1
E2
e
1.270
0.890
0.0500
0.0350
F
0.000
–
0.250
–
0.0000
–
0.0098
–
R
N
32
32
Nd
Ne
CP
7
7
9
9
0.100
0.0039
Figure 18. PLCC32 - 32 lead Plastic Leaded Chip Carrier, Package Outline
D
A1
D1
A2
1 N
B1
e
Ne
E1 E
D2/E2
F
B
0.51 (.020)
1.14 (.045)
Nd
A
R
CP
PLCC
Drawing is not to scale.
32/33
M50FW020
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2001 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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33/33
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