NAND01GW3A2B-KGD [NUMONYX]
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory; 已知合格芯片， 1千兆（ ×8 / ×16 ） ， 528字节/ 264字页， 3 V ， NAND闪存
| 型号： | NAND01GW3A2B-KGD |
| 厂家： | 
NUMONYX B.V |
| 描述： | Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory |
| 文件： | 总48页 (文件大小：1172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
Known Good Die, 1 Gbit (x 8/x 16),
528 Byte/264 word page, 3 V, NAND Flash memory
Features
■ High density NAND Flash memory
– 1 Gbit memory array
– 32 Mbit spare area
– Cost effective solutions for mass storage
applications
■ NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
■ Supply voltage:
– 3.0 V device: V = 2.7 to 3.6 V
DD
■ Page size
Wafer
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
■ Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
■ Serial Number option
■ Hardware Data Protection
■ Page Read / Program
– Program/Erase locked during Power
transitions
– Random access: 15 µs (3 V) (max)
– Sequential access: 50 ns (min)
– Page program time: 200 µs (typ)
■ Data Integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
■ Copy Back Program mode
– Fast page copy without external buffering
■ Fast Block Erase
– Block erase time: 2 ms (typ)
■ Status Register
■ Electronic signature
■ Chip Enable ‘Don’t care’
– Simple interface with microcontroller
January 2008
Rev 3
1/48
www.numonyx.com
1
Contents
NAND01GWxA2B-KGD
Contents
1
2
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Memory array organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.1
Bad Blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
3.10
Inputs/Outputs (I/O0-I/O7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Inputs/Outputs (I/O8-I/O15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Address Latch Enable (AL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Command Latch Enable (CL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Read Enable (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Write Protect (WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Ready/Busy (RB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
V
DD Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.11 VSS Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.1
4.2
4.3
4.4
4.5
4.6
Command Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Address Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Data Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Data Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Write Protect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5
6
Command set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Device operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6.1
6.2
Pointer operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Read Memory Array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.2.1
Random Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/48
NAND01GWxA2B-KGD
Contents
6.2.2
Page Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Page Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Copy Back Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Block Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Read Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.3
6.4
6.5
6.6
6.7
6.7.1
6.7.2
6.7.3
6.7.4
Write Protection bit (SR7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
P/E/R Controller bit (SR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Error bit (SR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
SR5, SR4, SR3, SR2 and SR1 are reserved . . . . . . . . . . . . . . . . . . . . . 23
6.8
Read Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
7
Software algorithms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
7.1
7.2
7.3
7.4
7.5
Bad Block Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
NAND Flash memory failure modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Garbage collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Wear-leveling algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Error Correction code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
8
Program and Erase times and endurance cycles . . . . . . . . . . . . . . . . . 29
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
9
10
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
10.1 Ready/Busy signal electrical characteristics . . . . . . . . . . . . . . . . . . . . . . 44
10.2 Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
11
12
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
3/48
List of tables
NAND01GWxA2B-KGD
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Product description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Valid blocks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Address Insertion, x 8 devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Address Insertion, x 16 devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Address definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Copy Back Program addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
NAND Flash failure modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Program, Erase Times and Program Erase endurance cycles. . . . . . . . . . . . . . . . . . . . . . 29
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Operating and AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
AC characteristics for command, address, data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
AC characteristics for operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Ordering Information Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
4/48
NAND01GWxA2B-KGD
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Memory array organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Pointer operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Read (A,B,C) operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Read block diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Page Program operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Copy Back operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Block Erase operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 10. Bad Block Management flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 11. Garbage collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 12. Error detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 13. Equivalent testing circuit for AC characteristics measurement. . . . . . . . . . . . . . . . . . . . . . 32
Figure 14. Command Latch AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 15. Address Latch AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 16. Data Input Latch AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 17. Sequential Data Output after Read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 18. Read Status Register AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 19. Read Electronic Signature AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 20. Page Read A/ Read B Operation AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 21. Read C Operation, One Page AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 22. Page Program AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 23. Block Erase AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 24. Reset AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 25. Program/Erase Enable waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 26. Program/Erase Disable waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 27. Ready/Busy AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 28. Ready/Busy load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 29. Resistor value versus waveform timings for Ready/Busy signal. . . . . . . . . . . . . . . . . . . . . 45
Figure 30. Data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
5/48
Description
NAND01GWxA2B-KGD
1
Description
The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that
uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page
family. The NAND01GW3A2B-KGD and NAND01GW4A2B-KGD have a density of 1 Gbits.
It operates from a 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare)
or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8
and x16 Input/Output bus on the NAND01GW3A2B-KGD and NAND01GW4A2B-KGD,
respectively. This interface reduces the pin count and makes it possible to migrate to other
densities without changing the footprint.
Each block can be programmed and erased over 100,000 cycles (with ECC). To extend the
lifetime of NAND Flash devices it is strongly recommended to implement an Error Correction
Code (ECC). A Write Protect pin is available to give a hardware protection against program
and erase operations.
The devices feature an open-drain Ready/Busy output that can be used to identify if the
Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output
allows the Ready/Busy pins from several memories to be connected to a single pull-up
resistor.
A Copy Back command is available to optimize the management of defective blocks. When
a Page Program operation fails, the data can be programmed in another page without
having to resend the data to be programmed.
The devices are available in unsawn wafer format for multichip package products (MCPs).
They have the Chip Enable Don't Care option, which allows the code to be directly
downloaded by a microcontroller, as Chip Enable transitions during the latency time do not
stop the read operation.
A Serial Number option, allows each device to be uniquely identified. The Serial Number
options is subject to an NDA (Non Disclosure Agreement) and so not described in the
datasheet. For more details of this option contact your nearest Numonyx Sales office.
For information on how to order these options refer to Table 20: Ordering Information
Scheme. Devices are shipped from the factory with Block 0 always valid and the memory
content bits, in valid blocks, erased to ’1’.
See Table 1: Product description, for all the devices available.
Table 1.
Product description
Timings
Page
Size
Block
Size
Bus
Width
Memory Operating
Part Number
Density
Package
Block
Erase
Typical
Random Sequential
Page
Program
Typical
Array
Voltage
Access
(Max)
Access
(Min)
NAND01GW3A2B-
KGD
32Pages
x
8192
Blocks
x8
Known
Good Die
for MCP
256+8 8K+256
Words Words
1 Gbit
2.7 to 3.6V
15µs
50ns
200µs
2ms
NAND01GW4A2B-
KGD
x16
6/48
NAND01GWxA2B-KGD
Figure 1.
Description
Logic diagram
V
DD
I/O8-I/O15, x16
E
I/O0-I/O7, x8/x16
R
W
NAND Flash
RB
AL
CL
WP
V
SS
AI07557C
Table 2.
Signal names
I/O8-15
Data Input/Outputs for x16 devices
Data Input/Outputs, Address Inputs, or Command Inputs for x8 and
x16 devices
I/O0-7
AL
CL
E
Address Latch Enable
Command Latch Enable
Chip Enable
R
Read Enable
RB
W
Ready/Busy (open-drain output)
Write Enable
WP
VDD
VSS
NC
DU
Write Protect
Supply Voltage
Ground
Not Connected Internally
Do Not Use
7/48
Description
Figure 2.
NAND01GWxA2B-KGD
Logic block diagram
Address
Register/Counter
AL
NAND Flash
Memory Array
CL
W
P/E/R Controller,
High Voltage
Generator
Command
Interface
Logic
E
WP
R
Page Buffer
Y Decoder
Command Register
I/O Buffers & Latches
RB
I/O0-I/O7, x8/x16
I/O8-I/O15, x16
AI07561c
8/48
NAND01GWxA2B-KGD
Memory array organization
2
Memory array organization
The memory array is made up of NAND structures where 16 cells are connected in series.
The memory array is organized in blocks where each block contains 32 pages. The array is
split into two areas, the main area and the spare area. The main area of the array is used to
store data whereas the spare area is typically used to store Error correction Codes, software
flags or Bad Block identification.
In x8 devices the pages are split into a main area with two half pages of 256 Bytes each and
a spare area of 16 Bytes. In the x16 devices the pages are split into a 256 Word main area
and an 8 Word spare area. Refer to Figure 3: Memory array organization.
2.1
Bad blocks
The NAND Flash 528 byte/ 264 word page devices may contain Bad Blocks, that is blocks
that contain one or more invalid bits whose reliability is not guaranteed. Additional Bad
Blocks may develop during the lifetime of the device.
The Bad Block Information is written prior to shipping (refer to Section 7.1: Bad Block
Management for more details).
Table 3 shows the minimum number of valid blocks in each device. The values shown
include both the Bad Blocks that are present when the device is shipped and the Bad Blocks
that could develop later on.
These blocks need to be managed using Bad Blocks Management, Block Replacement or
Error Correction Codes (refer to Section 7: Software algorithms).
Table 3.
Valid blocks
Density of device
Min
Max
1 Gbit
8032
8192
9/48
Memory array organization
NAND01GWxA2B-KGD
Figure 3.
Memory array organization
x8 DEVICES
x16 DEVICES
Block = 32 Pages
Block = 32 Pages
Page = 528 Bytes (512+16)
Page = 264 Words (256+8)
1st half Page 2nd half Page
(256 bytes) (256 bytes)
Main Area
Block
Page
Block
Page
8 bits
16 bits
256 Words
512 Bytes
16
Bytes
8
Words
Page Buffer, 264 Words
8
Page Buffer, 512 Bytes
16
256 Words
Words
512 Bytes
16 bits
Bytes
8 bits
AI07587
10/48
NAND01GWxA2B-KGD
Signal descriptions
3
Signal descriptions
See Figure 1: Logic diagram, and Table 2: Signal names, for a brief overview of the signals
connected to this device.
3.1
Inputs/Outputs (I/O0-I/O7)
Input/Outputs 0 to 7 are used to input the selected address, output the data during a Read
operation or input a command or data during a Write operation. The inputs are latched on
the rising edge of Write Enable. I/O0-I/O7 are left floating when the device is deselected or
the outputs are disabled.
3.2
Inputs/Outputs (I/O8-I/O15)
Input/Outputs 8 to 15 are only available in x16 devices. They are used to output the data
during a Read operation or input data during a Write operation. Command and Address
Inputs only require I/O0 to I/O7.
The inputs are latched on the rising edge of Write Enable. I/O8-I/O15 are left floating when
the device is deselected or the outputs are disabled.
3.3
3.4
3.5
Address Latch Enable (AL)
The Address Latch Enable activates the latching of the Address inputs in the Command
Interface. When AL is high, the inputs are latched on the rising edge of Write Enable.
Command Latch Enable (CL)
The Command Latch Enable activates the latching of the Command inputs in the Command
Interface. When CL is high, the inputs are latched on the rising edge of Write Enable.
Chip Enable (E)
The Chip Enable input activates the memory control logic, input buffers, decoders and read
circuitry. When Chip Enable is low, V , the device is selected.
IL
If Chip Enable goes High (V ) while the device is busy, the device remains selected and
IH
does not go into standby mode.
3.6
Read Enable (R)
The Read Enable, R, controls the sequential data output during Read operations. Data is
valid t
after the falling edge of R. The falling edge of R also increments the internal
RLQV
column address counter by one.
11/48
Signal descriptions
NAND01GWxA2B-KGD
3.7
Write Enable (W)
The Write Enable input, W, controls writing to the Command Interface, Input Address and
Data latches. Both addresses and data are latched on the rising edge of Write Enable.
During power-up and power-down a recovery time of 10 µs (min) is required before the
Command Interface is ready to accept a command. It is recommended to keep Write Enable
high during the recovery time.
3.8
3.9
Write Protect (WP)
The Write Protect pin is an input that gives a hardware protection against unwanted program
or erase operations. When Write Protect is Low, V , the device does not accept any
program or erase operations.
IL
It is recommended to keep the Write Protect pin Low, V , during power-up and power-down.
IL
Ready/Busy (RB)
The Ready/Busy output, RB, is an open-drain output that can be used to identify if the P/E/R
Controller is currently active.
When Ready/Busy is Low, V , a read, program or erase operation is in progress. When the
OL
operation completes Ready/Busy goes High, V
.
OH
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
Refer to Section 10.1: Ready/Busy signal electrical characteristics for details on how to
calculate the value of the pull-up resistor.
3.10
VDD Supply Voltage
V
provides the power supply to the internal core of the memory device. It is the main
DD
power supply for all operations (read, program and erase).
An internal voltage detector disables all functions whenever V is below the V
threshold
LKO
DD
(see Figure 30: Data protection) to protect the device from any involuntary Program/Erase
operations during power-transitions.
Each device in a system should have V decoupled with a 0.1µF capacitor. The PCB track
DD
widths should be sufficient to carry the required program and erase currents
3.11
VSS Ground
Ground, V
ground.
is the reference for the power supply. It must be connected to the system
SS,
12/48
NAND01GWxA2B-KGD
Bus operations
4
Bus operations
There are six standard bus operations that control the memory. Each of these is described
in this section, see Table 4: Bus operations, for a summary.
4.1
Command Input
Command Input bus operations are used to give commands to the memory. Command are
accepted when Chip Enable is Low, Command Latch Enable is High, Address Latch Enable
is Low and Read Enable is High. They are latched on the rising edge of the Write Enable
signal.
Only I/O0 to I/O7 are used to input commands.
See Figure 14 and Table 18 for details of the timings requirements.
4.2
Address Input
Address Input bus operations are used to input the memory address. Four bus cycles are
required to input the addresses (refer to Table 5 and Table 6, Address Insertion).
The addresses are accepted when Chip Enable is Low, Address Latch Enable is High,
Command Latch Enable is Low and Read Enable is High. They are latched on the rising
edge of the Write Enable signal. Only I/O0 to I/O7 are used to input addresses.
See Figure 15 and Table 18 for details of the timings requirements.
4.3
4.4
Data Input
Data Input bus operations are used to input the data to be programmed.
Data is accepted only when Chip Enable is Low, Address Latch Enable is Low, Command
Latch Enable is Low and Read Enable is High. The data is latched on the rising edge of the
Write Enable signal. The data is input sequentially using the Write Enable signal.
See Figure 16, Table 18 and Table 20 for details of the timings requirements.
Data Output
Data Output bus operations are used to read: the data in the memory array, the Status
Register, the Electronic Signature and the Serial Number.
Data is output when Chip Enable is Low, Write Enable is High, Address Latch Enable is Low,
and Command Latch Enable is Low.
The data is output sequentially using the Read Enable signal.
See Figure 17 and Table 20 for details of the timings requirements.
13/48
Bus operations
NAND01GWxA2B-KGD
4.5
Write Protect
Write Protect bus operations are used to protect the memory against program or erase
operations. When the Write Protect signal is Low the device will not accept program or erase
operations and so the contents of the memory array cannot be altered. The Write Protect
signal is not latched by Write Enable to ensure protection even during power-up.
4.6
Standby
When Chip Enable is High the memory enters Standby mode, the device is deselected,
outputs are disabled and power consumption is reduced.
Table 4.
Bus operations
Bus operation
E
AL
CL
R
W
WP
I/O0 - I/O7
I/O8 - I/O15(1)
Command Input
Address Input
Data Input
VIL
VIL
VIL
VIL
X
VIL
VIH
VIL
VIL
X
VIH
VIL
VIL
VIL
X
VIH Rising X(2)
Command
Address
Data Input
Data Output
X
X
VIH Rising
VIH Rising
Falling VIH
X
X
X
Data Input
Data Output
X
Data Output
Write Protect
Standby
X
X
X
X
VIL
X
X
X
VIH
X
X
X
1. Only for x16 devices.
2. WP must be VIH when issuing a program or erase command.
(1)(2)
Table 5.
Address Insertion, x 8 devices
Bus
cycle
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1st
2nd
3rd
4th
A7
A16
A24
VIL
A6
A15
A23
VIL
A5
A14
A22
VIL
A4
A13
A21
VIL
A3
A12
A20
VIL
A2
A11
A19
VIL
A1
A0
A9
A10
A18
A26
A17
A25
1. A8 is set Low or High by the 00h or 01h Command, see Section 6.1: Pointer operations.
2. Any additional address input cycles will be ignored.
(1)(2)(3)
Table 6.
Address Insertion, x 16 devices
I/O8-
I/O15
Bus
cycle
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1st
2nd
3rd
4th
A7
A16
A24
VIL
A6
A15
A23
VIL
A5
A14
A22
VIL
A4
A13
A21
VIL
A3
A12
A20
VIL
A2
A11
A19
VIL
A1
A0
A9
A10
A18
A26
VIL
A17
A25
1. A8 is Don’t care in x 16 devices.
2. Any additional address input cycles will be ignored.
3. The 01h command is not used in x 16 devices.
14/48
NAND01GWxA2B-KGD
Table 7.
Bus operations
Address definitions
Address
Definition
A0 - A7
A9 - A26
A9 - A13
A14 - A26
Column Address
Page Address
Address in Block
Block Address
A8 is set Low or High by the 00h or 01h
Command, and is Don’t care in x 16 devices
A8
15/48
Command set
NAND01GWxA2B-KGD
5
Command set
All bus write operations to the device are interpreted by the Command Interface. The
Commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when
the Command Latch Enable signal is high. Device operations are selected by writing
specific commands to the Command Register. The two-step command sequences for
program and erase operations are imposed to maximize data security.
The Commands are summarized in Table 8: Commands.
Table 8.
Commands
Command
Bus Write operations(1)
Command
accepted during
busy
1
st cycle
2nd cycle
3rd cycle
Read A
Read B
Read C
00h
01h(2)
50h
-
-
-
-
-
-
-
Read Electronic Signature
Read Status Register
Page Program
90h
-
70h
-
-
Yes
Yes
80h
10h
8Ah
D0h
-
-
Copy Back Program
Block Erase
00h
10h
60h
-
-
Reset
FFh
1. The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or
input/output data are not shown.
2. Don’t Care in x 16 devices.
16/48
NAND01GWxA2B-KGD
Device operations
6
Device operations
6.1
Pointer operations
As the NAND Flash memories contain two different areas for x 16 devices and three
different areas for x 8 devices (see Figure 4) the read command codes (00h, 01h, 50h) are
used to act as pointers to the different areas of the memory array (they select the most
significant column address).
The Read A and Read B commands act as pointers to the main memory area. Their use
depends on the bus width of the device.
■
In x 16 devices the Read A command (00h) sets the pointer to Area A (the whole of the
main area) that is words 0 to 255.
■
In x 8 devices the Read A command (00h) sets the pointer to Area A (the first half of the
main area) that is bytes 0 to 255, and the Read B command (01h) sets the pointer to
Area B (the second half of the main area) that is bytes 256 to 511.
In both the x8 and x16 devices the Read C command (50h), acts as a pointer to Area C (the
spare memory area) that is bytes 512 to 527 or words 256 to 263.
Once the Read A and Read C commands have been issued the pointer remains in the
respective areas until another pointer code is issued. However, the Read B command is
effective for only one operation, once an operation has been executed in Area B the pointer
returns automatically to Area A.
Figure 4.
Pointer operations
x8 Devices
x16 Devices
Area A
(00h)
Area B
(01h)
Area C
(50h)
Area A
(00h)
Area C
(50h)
Bytes 512
-527
Words 256
-263
Bytes 0- 255
Bytes 256-511
Words 0- 255
A
B
C
Page Buffer
A
C
Page Buffer
Pointer
(00h,01h,50h)
Pointer
(00h,50h)
AI07592
17/48
Device operations
NAND01GWxA2B-KGD
6.2
Read Memory Array
Each operation to read the memory area starts with a pointer operation as shown in the
Section 6.1: Pointer operations. Once the area (main or spare) has been selected using the
Read A, Read B or Read C commands, four bus cycles are required to input the address
(refer to Table 5) of the data to be read.
The device defaults to Read A mode after power-up or a Reset operation.
When reading the spare area addresses:
■
■
A0 to A3 (x 8 devices)
A0 to A2 (x 16 devices)
are used to set the start address of the spare area while addresses:
■
■
A4 to A7 (x 8 devices)
A3 to A7 (x 16 devices)
are ignored.
Once the Read A or Read C commands have been issued they do not need to be reissued
for subsequent read operations as the pointer remains in the respective area. However, the
Read B command is effective for only one operation, once an operation has been executed
in Area B the pointer returns automatically to Area A and so another Read B command is
required to start another read operation in Area B.
Once a read command is issued two types of operations are available: Random Read and
Page Read.
6.2.1
6.2.2
Random Read
Each time the command is issued the first read is Random Read.
Page Read
After the Random Read access the page data is transferred to the Page Buffer in a time of
t
(refer to Table 20 for value). Once the transfer is complete the Ready/Busy signal
WHBH
goes High. The data can then be read out sequentially (from selected column address to
last column address) by pulsing the Read Enable signal.
18/48
NAND01GWxA2B-KGD
Device operations
Figure 5.
Read (A,B,C) operations
CL
E
W
AL
R
tBLBH1
(read)
RB
I/O
00h/
Data Output (sequentially)
Address Input
01h/ 50h
Command
Code
Busy
ai07595c
Figure 6.
Read block diagrams
Read A Command, X8 Devices
Read A Command, X16 Devices
Area B
(2nd half Page)
Area A
(1st half Page)
Area C
(Spare)
Area A
(main area)
Area C
(Spare)
A9-A26
A9-A26
A0-A7
A0-A7
Read B Command, X8 Devices
Read C Command, X8/x16 Devices
Area B
(2nd half Page)
Area A/ B
Area A
(1st half Page)
Area C
(Spare)
Area A
Area C
(Spare)
A9-A26
A9-A26
A0-A7
A0-A3 (x8)
A0-A2 (x16)
A4-A7 (x8), A3-A7 (x16) are don't care
AI13144
19/48
Device operations
NAND01GWxA2B-KGD
6.3
Page Program
The Page Program operation is the standard operation to program data to the memory
array.
The main area of the memory array is programmed by page, however partial page
programming is allowed where any number of bytes (1 to 528) or words (1 to 264) can be
programmed.
The maximum number of consecutive partial page program operations allowed in the same
page is three. After exceeding this a Block Erase command must be issued before any
further program operations can take place in that page.
Before starting a Page Program operation a Pointer operation can be performed to point to
the area to be programmed. Refer to the Section 6.1: Pointer operations and Figure 5 for
details.
Each Page Program operation consists of five steps (see Figure 7):
1. One bus cycle is required to setup the Page Program command
2. Four bus cycles are then required to input the program address (refer to Table 5)
3. The data is then input (up to 528 bytes/ 264 words) and loaded into the Page Buffer
4. One bus cycle is required to issue the confirm command to start the P/E/R Controller.
5. The P/E/R Controller then programs the data into the array.
Once the program operation has started the Status Register can be read using the Read
Status Register command. During program operations the Status Register will only flag
errors for bits set to '1' that have not been successfully programmed to '0'.
During the program operation, only the Read Status Register and Reset commands will be
accepted, all other commands will be ignored.
Once the program operation has completed the P/E/R Controller bit SR6 is set to ‘1’ and the
Ready/Busy signal goes High.
The device remains in Read Status Register mode until another valid command is written to
the Command Interface.
Figure 7.
Page Program operation
tBLBH2
(Program Busy time)
RB
Busy
I/O
80h
Data Input
10h
Address Inputs
70h
SR0
Confirm
Code
Read Status Register
Page Program
Setup Code
ai07566
1. Before starting a Page Program operation a Pointer operation can be performed. Refer to Section 6.1: Pointer operations
for details.
20/48
NAND01GWxA2B-KGD
Device operations
6.4
Copy Back Program
The Copy Back Program operation is used to copy the data stored in one page and
reprogram it in another page.
The Copy Back Program operation does not require external memory and so the operation
is faster and more efficient because the reading and loading cycles are not required. The
operation is particularly useful when a portion of a block is updated and the rest of the block
needs to be copied to the newly assigned block.
If the Copy Back Program operation fails an error is signalled in the Status Register.
However as the standard external ECC cannot be used with the Copy Back operation bit
error due to charge loss cannot be detected. For this reason it is recommended to limit the
number of Copy Back operations on the same data and or to improve the performance of the
ECC.
The Copy Back Program operation requires three steps:
1. The source page must be read using the Read A command (one bus write cycle to
setup the command and then 4 bus write cycles to input the source page address).
This operation copies all 264 Words/ 528 Bytes from the page into the Page Buffer.
2. When the device returns to the ready state (Ready/Busy High), the second bus write
cycle of the command is given with the 4 bus cycles to input the target page address.
Refer to Table 9 for the addresses that must be the same for the Source and Target
pages.
3. Then the confirm command is issued to start the P/E/R Controller.
After a Copy Back Program operation, a partial-page program is not allowed in the target
page until the block has been erased.
See Figure 8 for an example of the Copy Back operation.
Table 9.
Copy Back Program addresses
Density
Same Address for Source and Target Pages
1 Gbit
A14, A26
Figure 8.
Copy Back operation
tBLBH1
tBLBH2
(Read Busy time)
(Program Busy time)
RB
I/O
Busy
Source
Target
00h
Read
8Ah
10h
70h
SR0
Address Inputs
Address Inputs
Copy Back
Code
Read Status Register
Code
ai07590b
21/48
Device operations
NAND01GWxA2B-KGD
6.5
Block Erase
Erase operations are done one block at a time. An erase operation sets all of the bits in the
addressed block to ‘1’. All previous data in the block is lost.
An erase operation consists of three steps (refer to Figure 9):
1. One bus cycle is required to setup the Block Erase command.
2. Only three bus cycles are required to input the block address. The first cycle (A0 to A7)
is not required as only addresses A14 to A26 are valid, A9 to A13 are ignored. In the
last address cycle I/O2 to I/O7 must be set to V .
IL
3. One bus cycle is required to issue the confirm command to start the P/E/R Controller.
Once the erase operation has completed the Status Register can be checked for errors.
Figure 9.
Block Erase operation
tBLBH3
(Erase Busy time)
RB
Busy
Block Address
Inputs
I/O
60h
D0h
70h
SR0
Confirm
Code
Read Status Register
Block Erase
Setup Code
ai07593
6.6
Reset
The Reset command is used to reset the Command Interface and Status Register. If the
Reset command is issued during any operation, the operation will be aborted. If it was a
program or erase operation that was aborted, the contents of the memory locations being
modified will no longer be valid as the data will be partially programmed or erased.
If the device has already been reset then the new Reset command will not be accepted.
The Ready/Busy signal goes Low for t
after the Reset command is issued. The value
BLBH4
of t
depends on the operation that the device was performing when the command was
BLBH4
issued, refer to Table 20 for the values.
22/48
NAND01GWxA2B-KGD
Device operations
6.7
Read Status Register
The device contains a Status Register which provides information on the current or previous
Program or Erase operation. The various bits in the Status Register convey information and
errors on the operation.
The Status Register is read by issuing the Read Status Register command. The Status
Register information is present on the output data bus (I/O0-I/O7) on the falling edge of Chip
Enable or Read Enable, whichever occurs last. When several memories are connected in a
system, the use of Chip Enable and Read Enable signals allows the system to poll each
device separately, even when the Ready/Busy pins are common-wired. It is not necessary to
toggle the Chip Enable or Read Enable signals to update the contents of the Status
Register.
After the Read Status Register command has been issued, the device remains in Read
Status Register mode until another command is issued. Therefore if a Read Status Register
command is issued during a Random Read cycle a new read command must be issued to
continue with a Page Read.
The Status Register bits are summarized in Table 10: Status Register Bits. Refer to Table 10
in conjunction with the following text descriptions.
6.7.1
Write Protection bit (SR7)
The Write Protection bit can be used to identify if the device is protected or not. If the Write
Protection bit is set to ‘1’ the device is not protected and program or erase operations are
allowed. If the Write Protection bit is set to ‘0’ the device is protected and program or erase
operations are not allowed.
6.7.2
6.7.3
6.7.4
P/E/R Controller bit (SR6)
The Program/Erase/Read Controller bit indicates whether the P/E/R Controller is active or
inactive. When the P/E/R Controller bit is set to ‘0’, the P/E/R Controller is active (device is
busy); when the bit is set to ‘1’, the P/E/R Controller is inactive (device is ready).
Error bit (SR0)
The Error bit is used to identify if any errors have been detected by the P/E/R Controller. The
Error Bit is set to ’1’ when a program or erase operation has failed to write the correct data to
the memory. If the Error Bit is set to ‘0’ the operation has completed successfully.
SR5, SR4, SR3, SR2 and SR1 are reserved
23/48
Device operations
NAND01GWxA2B-KGD
Definition
Table 10. Status Register Bits
Bit
Name
Logic level
'1'
'0'
'1'
'0'
Not Protected
Protected
SR7
SR6
Write Protection
P/E/R C inactive, device ready
P/E/R C active, device busy
Program/ Erase/ Read
Controller
SR5, SR4,
SR3, SR2,
SR1
Reserved
Don’t care
‘1’
‘0’
Error – operation failed
SR0
Generic Error
No Error – operation successful
6.8
Read Electronic Signature
The device contains a Manufacturer Code and Device Code. To read these codes two steps
are required:
1. first use one Bus Write cycle to issue the Read Electronic Signature command (90h),
followed by an address input of 00h.
2. then perform two Bus Read operations – the first will read the Manufacturer Code and
the second, the Device Code. Further Bus Read operations will be ignored.
Refer to Table 11: Electronic Signature, for information on the addresses.
Table 11. Electronic Signature
Part number
Manufacturer code
Device code
NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
20h
79h
0020h
0074h
24/48
NAND01GWxA2B-KGD
Software algorithms
7
Software algorithms
This section gives information on the software algorithms that Numonyx recommends to
implement to manage the Bad Blocks and extend the lifetime of the NAND device.
NAND Flash memories are programmed and erased by Fowler-Nordheim tunneling using a
high voltage. Exposing the device to a high voltage for extended periods can cause the
oxide layer to be damaged. For this reason, the number of program and erase cycles is
limited (see Table 13 for value) and it is recommended to implement Garbage Collection, a
Wear-Leveling Algorithm and an Error Correction Code, to extend the number of program
and erase cycles and increase the data retention.
To help integrate a NAND memory into an application Numonyx can provide File System OS
Native reference software, which supports the basic commands of file management.
Contact the nearest Numonyx sales office for more details.
7.1
Bad Block Management
Devices with Bad Blocks have the same quality level and the same AC and DC
characteristics as devices where all the blocks are valid. A Bad Block does not affect the
performance of valid blocks because it is isolated from the bit line and common source line
by a select transistor.
The devices are supplied with all the locations inside valid blocks erased (FFh). The Bad
Block Information is written prior to shipping. Any block where the 6th byte (x 8 device) / 1st
word (x 16 device) in the spare area of the 1st page does not contain FFh is a Bad Block.
The Bad Block Information must be read before any erase is attempted as the Bad Block
Information may be erased. For the system to be able to recognize the Bad Blocks based on
the original information it is recommended to create a Bad Block table following the
flowchart shown in Figure 10.
7.2
NAND Flash memory failure modes
Over the lifetime of the device additional Bad Blocks may develop.
To implement a highly reliable system, all the possible failure modes must be considered:
■
Program/Erase failure: in this case the block has to be replaced by copying the data to
a valid block. These additional Bad Blocks can be identified as attempts to program or
erase them will give errors in the Status Register. As the failure of a Page Program
operation does not affect the data in other pages in the same block, the block can be
replaced by re-programming the current data and copying the rest of the replaced block
to an available valid block. The Copy Back Program command can be used to copy the
data to a valid block. See Section 6.4: Copy Back Program for more details.
■
Read failure: in this case, ECC correction must be implemented. To efficiently use the
memory space, it is recommended to recover single-bit error in read by ECC, without
replacing the whole block.
Refer to Table 12 for the procedure to follow if an error occurs during an operation.
25/48
Software algorithms
NAND01GWxA2B-KGD
Table 12. NAND Flash failure modes
Operation
Procedure
Erase
Program
Read
Block Replacement
Block Replacement or ECC
ECC
Figure 10. Bad Block management flowchart
START
Block Address =
Block 0
Increment
Block Address
Update
Bad Block table
Data
= FFh?
NO
NO
YES
Last
block?
YES
END
AI07588C
Figure 11. Garbage collection
Old Area
New Area (After GC)
Valid
Page
Invalid
Page
Free
Page
(Erased)
AI07599B
26/48
NAND01GWxA2B-KGD
Software algorithms
7.3
Garbage collection
When a data page needs to be modified, it is faster to write to the first available page, and
the previous page is marked as invalid. After several updates it is necessary to remove
invalid pages to free some memory space.
To free this memory space and allow further program operations it is recommended to
implement a Garbage Collection algorithm. In a Garbage Collection software the valid
pages are copied into a free area and the block containing the invalid pages is erased (see
Figure 11).
7.4
Wear-leveling algorithm
For write-intensive applications, it is recommended to implement a Wear-leveling Algorithm
to monitor and spread the number of write cycles per block.
In memories that do not use a Wear-Leveling Algorithm not all blocks get used at the same
rate.
The Wear-leveling Algorithm ensures that equal use is made of all the available write cycles
for each block. There are two wear-leveling levels:
■
First Level Wear-leveling, new data is programmed to the free blocks that have had the
fewest write cycles
■
Second Level Wear-leveling, long-lived data is copied to another block so that the
original block can be used for more frequently-changed data.
The Second Level Wear-leveling is triggered when the difference between the maximum
and the minimum number of write cycles per block reaches a specific threshold.
7.5
Error Correction code
An Error Correction Code (ECC) can be implemented in the Nand Flash memories to
identify and correct errors in the data.
For every 2048 bits in the device it is recommended to implement 22 bits of ECC (16 bits for
line parity plus 6 bits for column parity).
An ECC model is available in VHDL or Verilog. Contact the nearest Numonyx sales office for
more details.
27/48
Software algorithms
NAND01GWxA2B-KGD
Figure 12. Error detection
New ECC generated
during read
XOR previous ECC
with new ECC
NO
NO
>1 bit
= zero?
All results
= zero?
YES
YES
22 bit data = 0
11 bit data = 1
1 bit data = 1
ECC Error
Correctable
Error
No Error
ai08332
28/48
NAND01GWxA2B-KGD
Program and Erase times and endurance cycles
8
Program and Erase times and endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are
shown in Table 13.
Table 13. Program, Erase Times and Program Erase endurance cycles
NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
Parameters
Unit
Min
Typ
Max
Page Program Time
200
2
500
3
µs
Block Erase Time
ms
Program/Erase Cycles (per block)
(with ECC)
100,000
10
cycles
years
Data Retention
29/48
Maximum rating
NAND01GWxA2B-KGD
9
Maximum rating
Stressing the device above the ratings listed in Table 14: Absolute maximum ratings, may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the Numonyx SURE Program
and other relevant quality documents.
Table 14. Absolute maximum ratings
Value
Symbol
Parameter
Unit
Min
Max
TBIAS
TSTG
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
– 50
– 65
– 0.6
– 0.6
125
150
4.6
4.6
°C
°C
V
(1)
VIO
VDD
V
1. Minimum Voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins.
Maximum voltage may overshoot to VDD + 2 V for less than 20 ns during transitions on I/O pins.
30/48
NAND01GWxA2B-KGD
DC and AC parameters
10
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 15: Operating and AC measurement conditions. Designers should check that the
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 15. Operating and AC measurement conditions
Value
Parameter
Units
Min
Max
Supply voltage (VDD
)
3 V devices
Grade 6
2.7
3.6
85
V
°C
pF
pF
V
Ambient temperature (TA)
–40
2.7 - 3.6 V
3.0 - 3.6 V
50
Load capacitance (CL) (1 TTL GATE
and CL)
100
Input pulses voltages
0.4
2.4
Input and output timing ref. voltages
Input rise and fall times
1.5
5
V
ns
kΩ
Output circuit resistors, Rref
8.35
(1)(2)
Table 16. Capacitance
Symbol
Parameter
Test condition
Typ
Max
Unit
CIN
Input capacitance
VIN = 0 V
20
pF
Input/Output
capacitance
CI/O
VIL = 0 V
20
pF
1.
TA = 25 °C, f = 1 MHz. CIN and CI/O are not 100% tested.
2. Input/output capacitances double on stacked devices.
31/48
DC and AC parameters
NAND01GWxA2B-KGD
Figure 13. Equivalent testing circuit for AC characteristics measurement
V
DD
2R
ref
NAND Flash
C
L
2R
ref
GND
GND
Ai11085
(1)
Table 17. DC characteristics
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
tRLRL minimum
Sequential
Read
IDD1
-
10
20
mA
E=VIL, OUT = 0 mA
I
Operating
current
IDD2
IDD3
IDD4
Program
Erase
-
-
-
-
-
10
10
-
20
20
1
mA
mA
mA
Standby current (TTL),
Standby current (CMOS)
E=VIH, WP=0V/VDD
E=VDD-0.2,
WP=0/VDD
IDD5
-
20
100
µA
ILI
ILO
Input Leakage current
Output Leakage current
Input High voltage
VIN= 0 to VDDmax
VOUT= 0 to VDDmax
-
-
-
-
-
±10
±10
µA
µA
V
VIH
0.8VDD
-
VDD+0.3
0.2VDD
-
VIL
Input Low voltage
-
−0.3
2.4
-
-
V
VOH
VOL
Output High voltage level
Output Low voltage level
Output Low current (RB)
IOH = −400 µA
IOL = 2.1 mA
VOL = 0.4 V
-
V
-
0.4
V
IOL (RB)
8
10
mA
VDD supply voltage (Erase and
Program lockout)
VLKO
-
-
-
1.7
V
1. Leakage currents double on stacked devices.
32/48
NAND01GWxA2B-KGD
DC and AC parameters
Table 18. AC characteristics for command, address, data input
NAND01GW3A2B-KGD,
Unit
Symbol
Alt.
Parameter
NAND01GW4A2B-KGD
tALLWL
tALHWL
Address Latch Low to Write Enable Low
Address Latch High to Write Enable Low
AL Setup
time
tALS
Min
Min
0
0
ns
ns
Command Latch High to Write Enable
Low
tCLHWL
tCLLWL
tDVWH
tELWL
CL Setup
time
tCLS
Command Latch Low to Write Enable
Low
Data Setup
time
tDS Data Valid to Write Enable High
Min
Min
20
0
ns
ns
E Setup
time
tCS Chip Enable Low to Write Enable Low
tWHALH
tWHALL
Write Enable High to Address Latch High
tALH
AL Hold
time
Min
10
10
ns
ns
Write Enable High to Address Latch Low
Write Enable High to Command Latch
tWHCLH
tWHCLL
High
tCLH
CL hold time Min
Write Enable High to Command Latch
Low
Data Hold
Min
tWHDX
tWHEH
tWHWL
tDH Write Enable High to Data Transition
tCH Write Enable High to Chip Enable High
tWH Write Enable High to Write Enable Low
10
10
15
ns
ns
ns
time
E Hold time Min
W High Hold
Min
time
W Pulse
Min
25(1)
50
ns
ns
(1)
tWLWH
tWP Write Enable Low to Write Enable High
tWC Write Enable Low to Write Enable Low
Width
Write Cycle
Min
tWLWL
time
1. If tELWL is less than 10ns, tWLWH must be minimum 35 ns, otherwise, tWLWH may be minimum 25 ns.
33/48
DC and AC parameters
NAND01GWxA2B-KGD
NAND01GW3A2B-
Table 19. AC characteristics for operations
KGD,
Symbol
Alt.
Parameter
Unit
NAND01GW4A2B-
KGD
Read Electronic
Signature
tALLRL1
Min
10
ns
tAR
Address Latch Low to Read Enable Low
tALLRL2
tBHRL
Read cycle
Min
Min
Max
10
20
15
ns
ns
µs
tRR Ready/Busy High to Read Enable Low
tBLBH1
Read Busy time
Program Busy
time
tBLBH2
tBLBH3
tPROG Ready/Busy Low to Ready/Busy High
tBERS
Max
500
3
µs
ms
µs
Erase Busy time Max
Reset Busy time,
Max
5
during ready
Reset Busy time,
Max
5
µs
µs
µs
during read
tBLBH4
tRST Write Enable High to Ready/Busy High
Reset Busy time,
Max
10
during program
Reset Busy time,
Max
500
during erase
tCLLRL
tDZRL
tEHQZ
tELQV
tCLR Command Latch Low to Read Enable Low
Min
Min
10
0
ns
ns
ns
ns
tIR
Data Hi-Z to Read Enable Low
tCHZ Chip Enable High to Output Hi-Z
tCEA Chip Enable Low to Output Valid
Max
Max
20
45
Read Enable High
Min
tRHRL
tREH Read Enable High to Read Enable Low
tRHZ Read Enable High to Output Hi-Z
15
30
ns
ns
Hold time
tRHQZ
tEHQX
tRHQX
Max
TOH Chip Enable high or Read Enable high to Output Hold
Read Enable
Min
10
ns
tRLRH
tRLRL
tRP
Read Enable Low to Read Enable High
Min
Min
25
50
ns
ns
Pulse Width
tRC Read Enable Low to Read Enable Low Read Cycle time
Read Enable
Access time
tREA Read Enable Low to Output Valid
Read ES Access
tRLQV
Max
30
ns
time(1)
tWHBH
tWHBL
tWHRL
tR
Write Enable High to Ready/Busy High Read Busy time
Max
Max
Min
15
100
60
µs
ns
ns
tWB Write Enable High to Ready/Busy Low
tWHR Write Enable High to Read Enable Low
34/48
NAND01GWxA2B-KGD
DC and AC parameters
NAND01GW3A2B-
Table 19. AC characteristics for operations (continued)
KGD,
Symbol
Alt.
Parameter
Unit
NAND01GW4A2B-
KGD
tWLWL
tWC Write Enable Low to Write Enable Low Write Cycle time
tWW Write Protection time
Min
Min
50
ns
ns
tVHWH
,
100
(2)
tVLWH
1. ES = Electronic Signature.
2. During a Program/Erase Enable Operation, tVHWH is the delay from WP high to W High.
During a Program/Erase Disable Operation, tVLWH is the delay from WP Low to W High.
Figure 14. Command Latch AC waveforms
CL
tCLHWL
tWHCLL
(CL Setup time)
(CL Hold time)
tWHEH
(E Hold time)
tELWL
(E Setup time)
E
tWLWH
W
tALLWL
tWHALH
(ALSetup time)
(AL Hold time)
AL
I/O
tDVWH
(Data Setup time)
tWHDX
(Data Hold time)
Command
ai08028
35/48
DC and AC parameters
NAND01GWxA2B-KGD
Figure 15. Address Latch AC waveforms
tCLLWL
(CL Setup time)
CL
tELWL
tWLWL
tWLWL
tWLWL
(E Setup time)
E
tWLWH
tWLWH
tWLWH
tWLWH
W
tWHWL
tWHALL
tALHWL
tWHWL
tWHALL
tWHWL
tWHALL
(AL Setup time)
(AL Hold time)
AL
I/O
tDVWH
tDVWH
tDVWH
tWHDX
tDVWH
tWHDX
(Data Setup time)
tWHDX
tWHDX
(Data Hold time)
Adrress
cycle 3
Adrress
cycle 2
Adrress
cycle 4
Adrress
cycle 1
ai08029
Figure 16. Data Input Latch AC waveforms
tWHCLH
(CL Hold time)
CL
E
tWHEH
(E Hold time)
tALLWL
tWLWL
(ALSetup time)
AL
W
tWLWH
tWLWH
tWLWH
tDVWH
tDVWH
tWHDX
tDVWH
tWHDX
(Data Setup time)
tWHDX
(Data Hold time)
Data In
Last
I/O
Data In 0
Data In 1
ai08030
36/48
NAND01GWxA2B-KGD
DC and AC parameters
Figure 17. Sequential Data Output after Read AC waveforms
tEHQX
tEHQZ
1. CL = Low, AL = Low, W = High.
Figure 18. Read Status Register AC waveform
tEHQX
37/48
DC and AC parameters
NAND01GWxA2B-KGD
Figure 19. Read Electronic Signature AC waveform
CL
E
W
AL
tALLRL1
R
tRLQV
(Read ES Access time)
Man.
code
Device
code
I/O
90h
00h
Read Electronic 1st Cycle
Manufacturer and
Device Codes
Signature
Command
Address
ai08039b
1. Refer to Table 11 for the values of the Manufacturer and Device Codes.
38/48
NAND01GWxA2B-KGD
DC and AC parameters
Figure 20. Page Read A/ Read B Operation AC waveform
CL
E
tWLWL
tEHQZ
W
tWHBL
AL
tALLRL2
tWHBH
tRLRL
tRHQZ
(Read Cycle time)
R
tRLRH
tBLBH1
RB
I/O
Data
N
Data
N+1
Data
N+2
Data
Last
00h or
01h
Add.N Add.N Add.N
cycle 2 cycle 3 cycle 4
Add.N
cycle 1
Data Output
from Address N to Last Byte or Word in Page
Command
Code
Address N Input
Busy
tRHQX
tEHQX
ai08033c
39/48
DC and AC parameters
NAND01GWxA2B-KGD
Figure 21. Read C Operation, One Page AC waveform
CL
E
W
tWHBH
tWHALL
AL
tALLRL2
tBHRL
R
Data
Last
Add. M Add. M Add. M Add. M
cycle 1 cycle 2 cycle 3 cycle 4
I/O
RB
50h
Data M
Command
Code
Data Output from M to
Last Byte or Word in Area C
Address M Input
Busy
ai08035b
1. A0-A7 is the address in the Spare Memory area, where A0-A3 are valid and A4-A7 are ‘Don’t care’.
40/48
NAND01GWxA2B-KGD
DC and AC parameters
Figure 22. Page Program AC waveform
CL
E
tWLWL
tWLWL
tWLWL
(Write Cycle time)
W
tWHBL
tBLBH2
(Program Busy time)
AL
R
Add.N
Add.N Add.N
cycle 1 cycle 2
Add.N
cycle 3
I/O
RB
80h
Last
N
10h
70h
SR0
cycle 4
Confirm
Code
Page Program
Setup Code
Page
Program
Address Input
Data Input
Read Status Register
ai08037
41/48
DC and AC parameters
NAND01GWxA2B-KGD
Figure 23. Block Erase AC waveform
CL
E
tWLWL
(Write Cycle time)
W
AL
R
tBLBH3
tWHBL
(Erase Busy time)
Add.
Add.
Add.
I/O
RB
60h
D0h
70h
SR0
cycle 1 cycle 2
cycle 3
Block Erase
Setup Command
Confirm
Code
Block Erase
Read Status Register
Block Address Input
ai08038b
Figure 24. Reset AC waveform
W
AL
CL
R
I/O
RB
FFh
tBLBH4
(Reset Busy time)
ai08043
42/48
NAND01GWxA2B-KGD
DC and AC parameters
Figure 25. Program/Erase Enable waveform
W
tVHWH
WP
RB
I/O
80h
10h
ai12477
Figure 26. Program/Erase Disable waveform
W
tVLWH
WP
High
RB
I/O
80h
10h
ai12478
43/48
DC and AC parameters
NAND01GWxA2B-KGD
10.1
Ready/Busy signal electrical characteristics
Figure 28, Figure 27 and Figure 29 show the electrical characteristics for the Ready/Busy
signal. The value required for the resistor R can be calculated using the following equation:
P
(
–
)
V
V
DDmax
OLmax
+ I
-------------------------------------------------------------
R min=
P
I
L
OL
So,
1.85V
---------------------------
R min(1.8V)=
P
+
3mA
I
L
3.2V
---------------------------
R min(3V)=
P
+
8mA
I
L
where I is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
L
P
max is determined by the maximum value of t .
r
Figure 27. Ready/Busy AC waveform
ready V
DD
V
OH
V
OL
busy
t
t
r
f
AI07564B
Figure 28. Ready/Busy load circuit
ibusy
R
P
V
DD
DEVICE
RB
Open Drain Output
V
SS
AI07563B
44/48
NAND01GWxA2B-KGD
DC and AC parameters
Figure 29. Resistor value versus waveform timings for Ready/Busy signal
V
= 3.3V, C = 100pF
L
DD
400
300
200
4
3
2
381
290
3.3
1.89
1.65
100
0
1
0.825
96
0.6
4.2
4.2
4.2
4.2
1
2
3
4
R
(KΩ)
P
t
t
r
ibusy
f
ai13145
1. T = 25°C.
10.2
Data Protection
The Numonyx NAND device is designed to guarantee Data Protection during Power
Transitions.
A V detection circuit disables all NAND operations, if V is below the V threshold.
LKO
DD
DD
In the V range from V
to the lower limit of nominal range, the WP pin should be kept
DD
LKO
low (V ) to guarantee hardware protection during power transitions as shown in the below
IL
figure.
Figure 30. Data protection
Nominal Range
V
DD
V
LKO
Locked
Locked
W
Ai11086
45/48
Ordering information
NAND01GWxA2B-KGD
11
Ordering information
Table 20. Ordering Information Scheme
Example:
NAND01GW3A
2
B E0 6
Device Type
NAND = NAND Flash memory
Density
01G = 1 Gb
Operating voltage
W = VDD = 2.7 to 3.6 V
Bus width
3 = x 8
4 = x 16
Family identifier
A = 528 bytes/ 264 word page
Device options
2 = Chip Enable Don’t Care Enabled
Product version
B = Second version
Package
E0 = Unsawn wafer
Temperature range
6 = –40 to 85 °C
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to
’1’.
For further information on any aspect of this device, please contact your nearest Numonyx
Sales Office.
46/48
NAND01GWxA2B-KGD
Revision history
12
Revision history
Table 21. Document revision history
Date
Revision
Changes
10-Aug-2006
0.1
Initial release.
Datasheet status updated to Preliminary data.
24-Aug-2006
1
Confidentiality level changed from Restricted Distribution to public.
Datasheet status upgraded to ‘Full datasheet’.
Data integrity of 100,000 specified for ECC implemented.
18-May-2007
04-Jan-2008
2
3
Section 7.2 Block replacement replaced by Section 7.2: NAND Flash
memory failure modes.
tWHBH1 removed from Table 21: AC Characteristics for operations.
Applied Numonyx branding.
47/48
NAND01GWxA2B-KGD
Please Read Carefully:
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR
IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT
AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY
WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF
NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE,
MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility
applications.
Numonyx may make changes to specifications and product descriptions at any time, without notice.
Numonyx, B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the
presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied,
by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.
Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Numonyx reserves
these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by
visiting Numonyx's website at http://www.numonyx.com.
Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries.
*Other names and brands may be claimed as the property of others.
Copyright © 11/5/7, Numonyx B.V. All Rights Reserved.
48/48
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