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NAND01GW4B2CZA6E [NUMONYX]

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory; 1千兆位， 2千兆位， 2112字节/ 1056字的页面， 1.8 / 3V ， NAND快闪存储器

NAND01GW4B2CZA6E


元器件型号：	NAND01GW4B2CZA6E
生产厂家：	NUMONYX B.V
描述和应用：	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 1千兆位， 2千兆位， 2112字节/ 1056字的页面， 1.8 / 3V ， NAND快闪存储器闪存存储内存集成电路
PDF文件：	总60页 (文件大小：1343K)
下载文档：	下载PDF数据表文档文件
型号参数：NAND01GW4B2CZA6E参数

NAND01GW4B2CZA6F

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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3 STMICROELECTR

NAND01GW4B2CZA6F

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

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3 NUMONYX

NAND01GW4B2CZA6F

Flash, 64MX16, 25000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63

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0 NUMONYX

NAND01GW4B2CZA6T

暂无描述

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0 NUMONYX

NAND01GW4B2CZA6T

64MX16 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63

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0 STMICROELECTR

NAND01GW4B2CZB1

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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2 STMICROELECTR

NAND01GW4B2CZB6

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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2 STMICROELECTR

NAND01GW4B3BN6F

Flash, 64MX16, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

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0 STMICROELECTR

NAND01GW4B3CN1F

64MX16 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

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0 STMICROELECTR

NAND01GW4B3CN6E

Flash, 64MX16, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

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0 STMICROELECTR

NAND01GW4M0AZB5E

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

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6 STMICROELECTR

NAND01GW4M0AZB5E

IC,MIXED MEMORY,FLASH+SDRAM,BGA,107PIN,PLASTIC

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0 STMICROELECTR

NAND01GW4M0AZB5F

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

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9 STMICROELECTR

NAND01GW4M0AZB5F

IC,MIXED MEMORY,FLASH+SDRAM,BGA,107PIN,PLASTIC

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0 STMICROELECTR

NAND01GW4M0AZC5E

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

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11 STMICROELECTR

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